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31. 发明授权

US08946098B2 Device for a laser lift-off method and laser lift-off method 有权
标题翻译：激光剥离方法和激光剥离装置
公开(公告)号：US08946098B2
公开(公告)日：2015-02-03
申请号：US13514373
申请日：2010-10-21
申请人： Ralph Wagner
发明人： Ralph Wagner
IPC分类号： H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477 , B23K26/06 , B23K26/067 , B23K26/073 , B23K26/36 , B23K26/40 , B23K26/00
CPC分类号： B23K26/0608 , B23K26/0624 , B23K26/067 , B23K26/0736 , B23K26/361 , B23K26/40 , B23K26/57 , B23K2101/40 , B23K2103/50 , H01L33/0079
摘要： A device is intended for a laser lift-off method to sever at least one layer from a carrier. The device includes a laser that generates pulsed laser radiation and at least one beam splitter. The laser radiation is divided into at least two partial beams by the at least one beam splitter. The partial beams are superimposed in an irradiation plane, the irradiation plane being provided such that a major side of the carrier remote from the layer is arranged therein. At the irradiation plane, an angle (α) between the at least two partial beams is at least 1.0°.
摘要翻译：设备旨在用于从载体切断至少一层的激光剥离方法。该装置包括产生脉冲激光辐射的激光和至少一个分束器。所述激光辐射由所述至少一个分束器分成至少两个部分光束。部分光束在照射平面上叠加，照射平面被设置为使得远离该层的载体的主侧被布置在其中。在照射平面处，至少两个分光束之间的角度（α）至少为1.0°。

32. 发明授权

US08937003B2 Technique for ion implanting a target 有权
标题翻译：离子注入目标的技术
公开(公告)号：US08937003B2
公开(公告)日：2015-01-20
申请号：US13613964
申请日：2012-09-13
申请人： Alexander S. Perel , Craig R. Chaney , Wayne D. LeBlanc , Robert Lindberg , Antonella Cucchetti , Neil J. Bassom , David Sporleder , James Young
发明人： Alexander S. Perel , Craig R. Chaney , Wayne D. LeBlanc , Robert Lindberg , Antonella Cucchetti , Neil J. Bassom , David Sporleder , James Young
IPC分类号： H01L21/26 , H01J27/00 , C23C14/48 , C23C14/56 , H01J37/08 , H01J37/317
CPC分类号： C23C14/48 , C23C14/564 , H01J37/08 , H01J37/3171 , H01J2237/022
摘要： A technique for ion implanting a target is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for ion implanting a target, the method comprising: providing a predetermined amount of processing gas in an arc chamber of an ion source, the processing gas containing implant species and implant species carrier, where the implant species carrier may be one of O and H; providing a predetermined amount of dilutant into the arc chamber, wherein the dilutant may comprise a noble species containing material; and ionizing the processing gas and the dilutant.
摘要翻译：公开了用于离子注入靶的技术。根据一个示例性实施例，该技术可以被实现为用于离子注入靶的方法，所述方法包括：在离子源的电弧室中提供预定量的处理气体，所述处理气体含有植入物种类和植入物种载体，其中种植体载体可以是O和H之一; 将预定量的稀释剂提供到所述电弧室中，其中所述稀释剂可包括含有贵重物质的材料; 并使处理气体和稀释剂电离。

33. 发明授权

US08922003B2 Low OHMIC contacts 有权
标题翻译：低OHMIC联系人
公开(公告)号：US08922003B2
公开(公告)日：2014-12-30
申请号：US13353336
申请日：2012-01-19
申请人： Dexter Xueming Tan , Yoke King Chin , Kin Leong Pey
发明人： Dexter Xueming Tan , Yoke King Chin , Kin Leong Pey
IPC分类号： H01L23/48 , H01L21/28 , H01L21/26
CPC分类号： H01L29/0847 , H01L21/268 , H01L21/28052 , H01L21/28518 , H01L29/665 , H01L29/66507 , H01L29/6659 , H01L29/7833
摘要： A method for forming a device is disclosed. A substrate with a contact region is provided. Vacancy defects are formed in the substrate. The vacancy defects have a peak concentration at a depth DV. A metal based contact is formed in the contact region. The metal based contact has a depth DC which is equal to about DV. The vacancy defects lower the resistance of the metal based contact with the substrate.
摘要翻译：公开了一种用于形成装置的方法。提供具有接触区域的基板。在基板中形成空位缺陷。空位缺陷在深度DV具有峰值浓度。在接触区域中形成金属基触点。基于金属的触点具有等于约DV的深度DC。空位缺陷降低了与基板的金属基接触的电阻。

34. 发明授权

US08852966B2 Heat treatment method and heat treatment apparatus of thin film 有权
标题翻译：薄膜的热处理方法和热处理装置
公开(公告)号：US08852966B2
公开(公告)日：2014-10-07
申请号：US13609947
申请日：2012-09-11
申请人： Hiroki Kiyama , Kazuhiko Fuse , Shinichi Kato
发明人： Hiroki Kiyama , Kazuhiko Fuse , Shinichi Kato
IPC分类号： H01L21/26 , H01L21/02 , H01L21/268 , H01L21/67
CPC分类号： H01L21/2686 , H01L21/02181 , H01L21/0228 , H01L21/02337 , H01L21/02356 , H01L21/67109 , H01L21/67115
摘要： A semiconductor wafer, on the surface of which a silicon dioxide base material and an amorphous silicon thin film are formed in this order, is carried into a chamber. An insulated gate bipolar transistor (IGBT) is connected with a power supply circuit to a flash lamp, and the IGBT makes an energization period to the flash lamp to be 0.01 millisecond or more and 1 millisecond or less, consequently making a flash light irradiation time to be 0.01 millisecond or more and 1 millisecond or less. Since a flash heat treatment is performed with a remarkably short flash light irradiation time, the excessive heating of the thin film of amorphous silicon is suppressed and harmful influence such as the exfoliation of the film is prevented.
摘要翻译：在其表面上依次形成二氧化硅基底材料和非晶硅薄膜的半导体晶片被携带到腔室中。绝缘栅双极晶体管（IGBT）与电源电路连接到闪光灯，并且IGBT使闪光灯的通电周期为0.01毫秒以上且1毫秒以下，从而使闪光灯照射时间为0.01毫秒以上且1毫秒以下。由于以明显短的闪光照射时间进行闪光热处理，因此能够抑制非晶硅薄膜的过度加热，并且防止了膜的剥离等有害影响。

35. 发明授权

US08830078B2 Method of manufacturing bearing device component coated with photoluminescence material, bearing device component and processing device 有权
标题翻译：制造涂有光致发光材料的轴承装置部件，轴承装置部件和加工装置的方法
公开(公告)号：US08830078B2
公开(公告)日：2014-09-09
申请号：US13786012
申请日：2013-03-05
申请人： Samsung Electro-Mechanics Japan Advanced Technology Co., Ltd.
发明人： Chenglin Chen , Kazuhiro Matsuo
IPC分类号： F16C32/06 , G08B21/00 , H01L21/00 , H01L21/26 , F16C33/10 , F16C41/00 , F16C17/24 , F16C17/02 , F16C33/14 , F16C33/00 , B05D1/36 , G01N21/64 , G01N21/00
CPC分类号： G01N21/64 , B05D1/36 , F16C17/026 , F16C17/24 , F16C33/00 , F16C33/10 , F16C33/14 , F16C41/008 , F16C2202/60 , F16C2223/30 , F16C2370/12 , G01N21/00 , G01N21/6456 , G01N21/8422 , G01N2021/646 , G01N2021/8427
摘要： A method of manufacturing a bearing device component is provided. The bearing device includes a shaft and a sleeve that surrounds the shaft, and at least either one of the shaft and the sleeve is referred to as a work. The method includes: a process of forming a coating of an anti-sticking-lube polymer on the work; a process of applying a photoluminescence material to a range overlapping a range where the coating of the anti-sticking-lube polymer is formed; and a condition detecting process of causing the photoluminescence material to emit light by causing the work to be irradiated with excitation light that excites the photoluminescence material, and detecting an applied condition of the photoluminescence material based on the light emission of the photoluminescence material, thereby detecting a condition of the coating of the anti-sticking-lube polymer.
摘要翻译：提供一种制造轴承装置部件的方法。轴承装置包括轴和围绕轴的套筒，并且轴和套筒中的至少任一个被称为工件。该方法包括：在工件上形成防粘稠聚合物涂层的工艺; 将光致发光材料施加到与形成防粘着体聚合物的涂层的范围重叠的范围的工序; 以及通过使激发光致发光材料的激发光照射的工作使光致发光材料发光的条件检测处理，并且基于光致发光材料的发光检测光致发光材料的施加条件，由此检测涂布防粘润滑剂聚合物的条件。

36. 发明授权

US08796160B2 Optical cavity furnace for semiconductor wafer processing 有权
标题翻译：光腔炉用于半导体晶圆加工
公开(公告)号：US08796160B2
公开(公告)日：2014-08-05
申请号：US12919433
申请日：2009-03-12
申请人： Bhushan L. Sopori
发明人： Bhushan L. Sopori
IPC分类号： H01L21/26 , F27D11/12
CPC分类号： H01L21/324 , H01L21/67115 , H05B3/0047
摘要： An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.
摘要翻译：具有与炉的光腔18相关联的多个光能源12的光腔炉10。多个光能源12可以是适于产生适当水平的光能的灯或其他装置。光腔炉10还可以包括一个或多个反射器14和与光能源12相关联的一个或多个壁16，使得反射器14和壁16限定光腔18.壁16可以具有任何期望的构造或形状以增强作为光腔18的炉的操作。光能源12可以相对于反射器14和限定光腔的壁定位在任何位置。光腔炉10还可以包括半导体晶片传输系统22，用于将一个或多个半导体晶片20传送通过光腔。

37. 发明授权

US08785286B2 Techniques for FinFET doping 有权
标题翻译： FinFET掺杂技术
公开(公告)号：US08785286B2
公开(公告)日：2014-07-22
申请号：US12702803
申请日：2010-02-09
申请人： Chun Hsiung Tsai , Chien-Tai Chan , Mao-Rong Yeh , Da-Wen Lin
发明人： Chun Hsiung Tsai , Chien-Tai Chan , Mao-Rong Yeh , Da-Wen Lin
IPC分类号： H01L21/336 , H01L21/26 , H01L21/42 , H01L21/223
CPC分类号： H01L29/66803 , H01L21/2236 , H01L21/2254 , H01L21/26526 , H01L21/26586
摘要： A method of forming an integrated circuit includes providing a semiconductor wafer including a semiconductor fin dispatched on a surface of the semiconductor wafer; forming a dopant-rich layer having an impurity on a top surface and sidewalls of the semiconductor fin, wherein the impurity is of n-type or p-type; performing a knock-on implantation to drive the impurity into the semiconductor fin; and removing the dopant-rich layer.
摘要翻译：一种形成集成电路的方法包括提供半导体晶片，该半导体晶片包括在半导体晶片的表面上分配的半导体鳍; 在所述半导体鳍片的顶表面和侧壁上形成具有杂质的富掺杂层，其中所述杂质为n型或p型; 执行敲击植入以将杂质驱动到半导体鳍片中; 并除去富含掺杂剂的层。

38. 发明授权

US08709904B2 Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus 失效
标题翻译：半导体衬底的制造方法，半导体衬底，电子器件的制造方法以及反应装置
公开(公告)号：US08709904B2
公开(公告)日：2014-04-29
申请号：US13131523
申请日：2009-11-26
申请人： Tomoyuki Takada , Masahiko Hata , Hisashi Yamada
发明人： Tomoyuki Takada , Masahiko Hata , Hisashi Yamada
IPC分类号： H01L21/331 , H01L21/336 , H01L21/46 , H01L21/78 , H01L21/26
CPC分类号： H01L21/02532 , H01L21/02667 , H01L21/2686 , H01L21/67115 , H01L29/78
摘要： There is provided a method of producing a semiconductor wafer by thermally processing a base wafer having a portion to be thermally processed that is to be thermally processed. The method comprises a step of providing, on the base wafer, a portion to be heated that generates heat through absorption of an electromagnetic wave and selectively heats the portion to be thermally processed, a step of applying an electromagnetic wave to the base wafer, and a step of lowering the lattice defect density of the portion to be thermally processed, by means of the heat generated by the portion to be heated through the absorption of the electromagnetic wave.
摘要翻译：提供了通过热处理具有待热处理部分的基底晶片来制造半导体晶片的方法。该方法包括在基底晶片上提供通过吸收电磁波产生热并选择性地加热待热处理的部分的加热部分，向基底晶片施加电磁波的步骤，以及借助于通过吸收电磁波而被加热部分产生的热量来降低待热处理部分的晶格缺陷密度的步骤。

39. 发明授权

US08703582B2 Laser processing method 有权
标题翻译：激光加工方法
公开(公告)号：US08703582B2
公开(公告)日：2014-04-22
申请号：US13160062
申请日：2011-06-14
申请人： Yoshinori Abe
发明人： Yoshinori Abe
IPC分类号： H01L21/00 , H01L21/26 , H01L21/42 , H01L21/66
CPC分类号： H01L33/0095 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/172 , B23K2103/50 , H01L21/268
摘要： An element-group formation substrate (20) having plural semiconductor light emitting elements (21) formed on a substrate front surface (11a) is sequentially irradiated with a laser beam (64) having a first output from a substrate back surface (11b) side in the y direction, and the laser beam (64) is sequentially collected to a part having a first depth D1 from the substrate back surface (11b), thereby forming a first modified region L1. The substrate (20) having the first modified region L1 formed therein is sequentially irradiated with the laser beam (64) having a third output (
摘要翻译：具有形成在基板前表面（11a）上的多个半导体发光元件（21）的元件组形成基板（20）从基板背面（11b）侧依次照射具有第一输出的激光束（64）沿着y方向，从基板背面（11b）依次将激光束（64）收集到具有第一深度D1的部分，从而形成第一改质区域L1。在其中形成有第一改质区域L1的基板（20）在y方向上从基板背面11b侧起第三输出（<第一输出）的激光束（64）依次照射， 64）从比第一深度D1浅的衬底背面（11b）顺序收集到具有第三深度D3的部分，从而形成第三改质区域L3。

40. 发明申请

US20140092384A1 DIFFRACTION GRATING MANUFACTURING METHOD, SPECTROPHOTOMETER, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：衍射光栅制造方法，分光光度计和半导体器件制造方法
公开(公告)号：US20140092384A1
公开(公告)日：2014-04-03
申请号：US14118375
申请日：2012-05-17
申请人： Yoshisada Ebata , Shigeru Matsui , Norio Hasegawa , Kazuyuki Kakuta , Toshihiko Onozuka
发明人： Yoshisada Ebata , Shigeru Matsui , Norio Hasegawa , Kazuyuki Kakuta , Toshihiko Onozuka
IPC分类号： G02B5/18 , H01L21/26
CPC分类号： G02B5/1857 , G01J3/0262 , G01J3/18 , G01J3/42 , G02B5/18 , G02B5/1814 , G02B5/1861 , G03F1/50 , G03F1/54 , G03F7/0005 , H01L21/26
摘要： The present invention has been made in view of the above, and an object thereof is to provide a manufacturing technique capable of manufacturing a diffraction grating which is suitable for use in a spectrophotometer and has an apex angle of a convex portion of about 90° and can satisfy high diffraction efficiency and a low stray light amount. A method of manufacturing a diffraction grating, the method including: setting an exposure condition such that a sectional shape of a convex portion of a resist on a substrate, which has been formed by exposure, is an asymmetric triangle with respect to an opening portion shape of a mask having an opening portion with a periodic structure and an angle formed by a long side and a short side of the triangle is about 90°; and performing exposure.
摘要翻译：发明内容本发明是鉴于上述问题而完成的，其目的在于提供一种制造技术，其能够制造适用于分光光度计的衍射光栅，并具有约90°的凸部的顶角和可以满足高衍射效率和低杂散光量。一种制造衍射光栅的方法，该方法包括：设置曝光条件，使得通过曝光形成的基板上的抗蚀剂的凸部的截面形状相对于开口部形状为不对称三角形具有周期性结构的开口部分和由三角形的长边和短边形成的角度的面具为约90°; 并进行曝光。

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