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1. 发明申请

US20120088035A1 PLATEN CONTROL 有权
标题翻译：板控制
公开(公告)号：US20120088035A1
公开(公告)日：2012-04-12
申请号：US13270644
申请日：2011-10-11
申请人： Shengwu Chang , Joseph C. Olson , Frank Sinclair , Matthew P. McClellan , Antonella Cucchetti
发明人： Shengwu Chang , Joseph C. Olson , Frank Sinclair , Matthew P. McClellan , Antonella Cucchetti
IPC分类号： C23C14/48 , B21C51/00
CPC分类号： H01L21/67109 , H01L21/67288
摘要： A system and method for maintain a desired degree of platen flatness is disclosed. A laser system is used to measure the flatness of a platen. The temperature of the platen is then varied to achieve the desired level of flatness. In some embodiments, this laser system is only used during a set up period and the resulting desired temperature is then used during normal operation. In other embodiments, a laser system is used to measure the flatness of the platen, even while the workpiece is being processed.
摘要翻译：公开了一种用于保持期望的压板平整度的系统和方法。激光系统用于测量压板的平整度。然后改变压板的温度以达到所需的平坦度水平。在一些实施例中，该激光系统仅在建立周期期间使用，然后在正常操作期间使用所得到的期望温度。在其他实施例中，即使在正在处理工件时，也使用激光系统来测量压板的平坦度。

2. 发明授权

US07820988B2 Implant uniformity control 有权
标题翻译：植入物均匀性控制
公开(公告)号：US07820988B2
公开(公告)日：2010-10-26
申请号：US12244001
申请日：2008-10-02
申请人： Victor M. Benveniste , Antonella Cucchetti , Bon-Woong Koo
发明人： Victor M. Benveniste , Antonella Cucchetti , Bon-Woong Koo
IPC分类号： H01J37/317 , H01L21/265
CPC分类号： H01J37/3171 , H01J37/1472 , H01J37/3007 , H01J2237/0041 , H01J2237/047 , H01J2237/24507 , H01J2237/24535 , H01J2237/30472 , H01J2237/30477 , H01J2237/31701 , H01J2237/31703
摘要： An apparatus and method for ion implantation that include destabilizing the ion beam as it passes through magnetic field, preferably a dipole magnetic field is disclosed. By introducing a bias voltage at certain points within the magnetic field, electrons from the plasma are drawn toward the magnet, thereby causing the ion beam to expand due to space charge effects. The bias voltage can be introduced into the magnet in a region where the magnetic field has only one component. Alternatively, the bias voltage can be in a region wherein the magnetic field has two components.
摘要翻译：公开了一种用于离子注入的装置和方法，其包括在离子束通过磁场时使其稳定化，优选偶极磁场。通过在磁场内的某些点引入偏置电压，来自等离子体的电子被吸向磁体，从而由于空间电荷效应而导致离子束膨胀。可以在磁场仅具有一个分量的区域中将偏置电压引入到磁体中。或者，偏置电压可以在其中磁场具有两个分量的区域中。

3. 发明授权

US07547460B2 Ion implanter optimizer scan waveform retention and recovery 有权
标题翻译：离子注入机优化器扫描波形保留和恢复
公开(公告)号：US07547460B2
公开(公告)日：2009-06-16
申请号：US09950939
申请日：2001-09-12
申请人： Antonella Cucchetti , Joseph Olson , Gregory Gibilaro , Rosario Mollica
发明人： Antonella Cucchetti , Joseph Olson , Gregory Gibilaro , Rosario Mollica
IPC分类号： C23C14/54 , C23C14/48
CPC分类号： H01J37/3171 , H01J37/1474 , H01J2237/3045
摘要： Methods and apparatus are provided for controlling dose uniformity in an ion implantation system. According to one embodiment of the invention, an initial scan waveform is adjusted to obtain a desired uniformity for use in a first implant process, and the adjusted scan waveform is stored. The stored scan waveform is recalled and used in a second implant process. According to a another embodiment of the invention, desired beam parameters are identified and, based on the desired beam parameters, a stored scan waveform is recalled for use in a uniformity adjustment process, and the uniformity adjustment process is performed. According to a further embodiment of the invention, an apparatus is provided that includes a beam profiler for measuring a current distribution of a scanned ion beam. The apparatus also includes a data acquisition and analysis unit for adjusting an initial scan waveform based on a desired current distribution and the measured current distribution for use in a first implant process, storing the adjusted scan waveform, recalling the stored scan waveform, and using the recalled scan waveform in a second implant process.
摘要翻译：提供了用于控制离子注入系统中的剂量均匀性的方法和装置。根据本发明的一个实施例，调整初始扫描波形以获得在第一注入过程中使用的所需均匀性，并且存储经调整的扫描波形。存储的扫描波形在第二次注入过程中被调用并使用。根据本发明的另一实施例，识别期望的波束参数，并且基于期望的波束参数，调用存储的扫描波形以用于均匀性调整处理，并且执行均匀性调整处理。根据本发明的另一实施例，提供了一种装置，其包括用于测量扫描离子束的电流分布的光束轮廓仪。该装置还包括数据采集和分析单元，用于基于期望的电流分布和所测量的电流分布来调整初始扫描波形，以用于第一注入过程，存储经调整的扫描波形，调用所存储的扫描波形，并使用在第二次植入过程中调用扫描波形。

4. 发明授权

US07402820B2 Ion beam contamination determination 有权
标题翻译：离子束污染测定
公开(公告)号：US07402820B2
公开(公告)日：2008-07-22
申请号：US11289885
申请日：2005-11-30
申请人： Russell Low , Joseph C. Olson , Antonella Cucchetti , Anthony Renau , Marie Welsch
发明人： Russell Low , Joseph C. Olson , Antonella Cucchetti , Anthony Renau , Marie Welsch
IPC分类号： H01L21/425 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/31705 , H01L22/12
摘要： A system, method and program product for determining contamination of an ion beam are disclosed. In the event of an isobaric interference, or near isobaric interference between a contaminant ion and an expected ion of an ion beam, which is difficult to detect, it is possible to measure a third ion in the ion beam and estimate, based on the amount of the third ion measured, a relative amount of the contaminant ion compared to the expected ion. The estimated relative amount of the contaminant ion is used together with a measured mass resolution of the ion implantation system to determine whether an ion implantation process needs to be suspended.
摘要翻译：公开了一种用于确定离子束污染的系统，方法和程序产品。在难以检测的等离子体干扰或离子束的预期离子之间的等压干扰或接近等压干扰的情况下，可以测量离子束中的第三离子并基于量测量的第三离子，与预期离子相比的污染物离子的相对量。污染物离子的估计相对量与离子注入系统的测量质量分辨率一起使用以确定离子注入过程是否需要暂停。

5. 发明授权

US08937003B2 Technique for ion implanting a target 有权
标题翻译：离子注入目标的技术
公开(公告)号：US08937003B2
公开(公告)日：2015-01-20
申请号：US13613964
申请日：2012-09-13
申请人： Alexander S. Perel , Craig R. Chaney , Wayne D. LeBlanc , Robert Lindberg , Antonella Cucchetti , Neil J. Bassom , David Sporleder , James Young
发明人： Alexander S. Perel , Craig R. Chaney , Wayne D. LeBlanc , Robert Lindberg , Antonella Cucchetti , Neil J. Bassom , David Sporleder , James Young
IPC分类号： H01L21/26 , H01J27/00 , C23C14/48 , C23C14/56 , H01J37/08 , H01J37/317
CPC分类号： C23C14/48 , C23C14/564 , H01J37/08 , H01J37/3171 , H01J2237/022
摘要： A technique for ion implanting a target is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for ion implanting a target, the method comprising: providing a predetermined amount of processing gas in an arc chamber of an ion source, the processing gas containing implant species and implant species carrier, where the implant species carrier may be one of O and H; providing a predetermined amount of dilutant into the arc chamber, wherein the dilutant may comprise a noble species containing material; and ionizing the processing gas and the dilutant.
摘要翻译：公开了用于离子注入靶的技术。根据一个示例性实施例，该技术可以被实现为用于离子注入靶的方法，所述方法包括：在离子源的电弧室中提供预定量的处理气体，所述处理气体含有植入物种类和植入物种载体，其中种植体载体可以是O和H之一; 将预定量的稀释剂提供到所述电弧室中，其中所述稀释剂可包括含有贵重物质的材料; 并使处理气体和稀释剂电离。

6. 发明授权

US07442944B2 Ion beam implant current, spot width and position tuning 有权
标题翻译：离子束注入电流，光斑宽度和位置调整
公开(公告)号：US07442944B2
公开(公告)日：2008-10-28
申请号：US10960904
申请日：2004-10-07
申请人： Shengwu Chang , Antonella Cucchetti , Joseph P. Dzengeleski , Gregory R. Gibilaro , Rosario Mollica , Gregg A. Norris , Joseph C. Olson , Marie J. Welsch
发明人： Shengwu Chang , Antonella Cucchetti , Joseph P. Dzengeleski , Gregory R. Gibilaro , Rosario Mollica , Gregg A. Norris , Joseph C. Olson , Marie J. Welsch
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/24542 , H01J2237/30461 , H01J2237/31703
摘要： An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.
摘要翻译：公开了用于调整离子注入机系统的离子束调谐方法，系统和程序产品。本发明通过例如扫描离子束通过植入室内的轮廓仪获得离子束的离子束轮廓; 并调整离子注入系统，以根据离子束轮廓最大化估计的注入电流，以同时优化总离子束电流和离子束斑点宽度，并最大化注入电流。此外，调谐还可以基于点光束中心的反馈沿着期望的离子束路径定位离子束，其通过减少离子束建立时间改善离子注入系统的生产率和性能，并为每个离子提供可重复的射束角度性能横跨许多设置。

7. 发明申请

US20080245957A1 TUNING AN ION IMPLANTER FOR OPTIMAL PERFORMANCE 审中-公开
标题翻译：调整离子植入物的最佳性能
公开(公告)号：US20080245957A1
公开(公告)日：2008-10-09
申请号：US11695747
申请日：2007-04-03
申请人： Atul Gupta , Jay Scheuer , Daniel Distaso , Antonella Cucchetti , William G. Callahan
发明人： Atul Gupta , Jay Scheuer , Daniel Distaso , Antonella Cucchetti , William G. Callahan
IPC分类号： G21K5/00 , G01D18/00
CPC分类号： H01J37/3171 , H01J37/3023 , H01J37/304 , H01J2237/30433
摘要： An approach that tunes an ion implanter for optimal performance is described. In one embodiment, there is a system for tuning an ion implanter having multiple beamline elements to generate an ion beam having desired beam properties. In this embodiment, the system comprises a beamline element settings controller configured to provide beamline element settings for generating the desired beam properties. A tuning model correlates the beamline element settings with beam properties. A calibration component is configured to calibrate the tuning model in response to a determination that beam properties measured from using the tuned beamline element settings differs from the determined tuned beamline element settings.
摘要翻译：描述了调整离子注入机以获得最佳性能的方法。在一个实施例中，存在用于调整具有多个束线元件的离子注入机的系统，以产生具有所需波束特性的离子束。在该实施例中，系统包括被配置为提供用于产生所需光束特性的波束线元件设置的波束线元件设置控制器。调谐模型将光束元素设置与光束属性相关联。校准组件被配置为响应于从使用调谐的波束线元件设置测量的波束特性与所确定的调谐波束线元件设置不同的确定校准调谐模型。

8. 发明授权

US06403972B1 Methods and apparatus for alignment of ion beam systems using beam current sensors 有权
标题翻译：使用光束电流传感器对离子束系统进行对准的方法和装置
公开(公告)号：US06403972B1
公开(公告)日：2002-06-11
申请号：US09349828
申请日：1999-07-08
申请人： Antonella Cucchetti , Leo Vincent Klos, Jr. , Joseph C. Olson , Raymond L. Pelletier , Keith Pierce , Anthony Renau , Donna Smatlak
发明人： Antonella Cucchetti , Leo Vincent Klos, Jr. , Joseph C. Olson , Raymond L. Pelletier , Keith Pierce , Anthony Renau , Donna Smatlak
IPC分类号： H01J3730
CPC分类号： G21K1/08 , G21K1/093 , G21K5/04 , G21K5/10 , H01J37/304 , H01J37/3171 , H01J2237/24405 , H01J2237/24528 , H01J2237/30433 , H01J2237/30472
摘要： An ion beam is sensed with a beam current sensor which has a sensing aperture that is smaller than a cross-sectional dimension of the ion beam at the beam current sensor. The sensed ion beam current is indicative of ion beam position relative to a desired ion beam path. The ion beam position may be adjusted if the sensed ion beam position differs from the desired ion beam path. One or more beam current sensors may be utilized in an ion implanter for calibration and/or alignment. The beam current sensor may be utilized to determine a relation between a characteristic of an ion beam, such as magnetic rigidity, and a parameter of a system element, such as magnetic field, required to direct the ion beam along a desired ion beam path.
摘要翻译：用束电流传感器感测离子束，其具有小于束电流传感器处的离子束的横截面尺寸的感测孔径。感测的离子束电流指示相对于期望的离子束路径的离子束位置。如果感测的离子束位置与期望的离子束路径不同，则可以调节离子束位置。用于校准和/或对准的离子注入机中可以使用一个或多个束电流传感器。束电流传感器可以用于确定离子束的特性（例如磁刚性）与系统元件（诸如磁场）的参数之间的关系，以将离子束沿着期望的离子束路径引导。

9. 发明申请

US20130072008A1 TECHNIQUE FOR ION IMPLANTING A TARGET 有权
标题翻译：离子注入目标的技术
公开(公告)号：US20130072008A1
公开(公告)日：2013-03-21
申请号：US13613964
申请日：2012-09-13
申请人： Alexander S. Perel , Craig R. Chaney , Wayne D. LeBlanc , Robert Lindberg , Antonella Cucchetti , Neil J. Bassom , David Sporleder , James Young
发明人： Alexander S. Perel , Craig R. Chaney , Wayne D. LeBlanc , Robert Lindberg , Antonella Cucchetti , Neil J. Bassom , David Sporleder , James Young
IPC分类号： H01L21/265
CPC分类号： C23C14/48 , C23C14/564 , H01J37/08 , H01J37/3171 , H01J2237/022
摘要： A technique for ion implanting a target is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for ion implanting a target, the method comprising: providing a predetermined amount of processing gas in an arc chamber of an ion source, the processing gas containing implant species and implant species carrier, where the implant species carrier may be one of O and H; providing a predetermined amount of dilutant into the arc chamber, wherein the dilutant may comprise a noble species containing material; and ionizing the processing gas and the dilutant.
摘要翻译：公开了用于离子注入靶的技术。根据一个示例性实施例，该技术可以被实现为用于离子注入靶的方法，所述方法包括：在离子源的电弧室中提供预定量的处理气体，所述处理气体含有植入物种类和植入物种载体，其中种植体载体可以是O和H之一; 将预定量的稀释剂提供到所述电弧室中，其中所述稀释剂可包括含有贵重物质的材料; 并使处理气体和稀释剂电离。

10. 发明申请

US20070241276A1 Ion beam contamination determination 有权
标题翻译：离子束污染测定
公开(公告)号：US20070241276A1
公开(公告)日：2007-10-18
申请号：US11289885
申请日：2005-11-30
申请人： Russell Low , Joseph Olson , Antonella Cucchetti , Anthony Renau , Marie Welsch
发明人： Russell Low , Joseph Olson , Antonella Cucchetti , Anthony Renau , Marie Welsch
IPC分类号： B01D59/44
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/31705 , H01L22/12
摘要： A system, method and program product for determining contamination of an ion beam are disclosed. In the event of an isobaric interference, or near isobaric interference between a contaminant ion and an expected ion of an ion beam, which is difficult to detect, it is possible to measure a third ion in the ion beam and estimate, based on the amount of the third ion measured, a relative amount of the contaminant ion compared to the expected ion. The estimated relative amount of the contaminant ion is used together with a measured mass resolution of the ion implantation system to determine whether an ion implantation process needs to be suspended.
摘要翻译：公开了一种用于确定离子束污染的系统，方法和程序产品。在难以检测的等离子体干扰或离子束的预期离子之间的等压干扰或接近等压干扰的情况下，可以测量离子束中的第三离子并基于量测量的第三离子，与预期离子相比的污染物离子的相对量。污染物离子的估计相对量与离子注入系统的测量质量分辨率一起使用以确定离子注入过程是否需要暂停。

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