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41. 发明授权

US10038415B2 Power amplifier matching circuit with DVCs 有权
公开(公告)号：US10038415B2
公开(公告)日：2018-07-31
申请号：US15516995
申请日：2015-09-23
申请人： CAVENDISH KINETICS, INC.
发明人： Ray Parkhurst
IPC分类号： H03F3/191 , H03F1/56 , H03F3/195 , H03F3/213
CPC分类号： H03F1/56 , H03F1/565 , H03F3/195 , H03F3/213 , H03F3/245 , H03F2200/102 , H03F2200/387 , H03F2200/451 , H03H7/40 , H03H2007/013
摘要： Embodiments disclosed herein generally relate to power amplifier matching circuits used for matching impedance and harmonic control in a device, such as a cellular phone. In one example, a power amplifier matching circuit includes two DVCs, four inductors, a transistor, and a capacitor. Utilizing the two DVCs, the impedance matching ratio and the center frequency of the circuit are capable of adjustment as needed. Moreover, the inclusion of the two DVCs may also prevent harmonic frequencies from undesirably passing through the power amplifier matching circuit to the antenna of a cellular device. The power amplifier matching circuit may be used in conjunction with an amplifier, where the output of the amplifier is proportional to the current in the circuit.

42. 发明授权

US09754724B2 Stress control during processing of a MEMS digital variable capacitor (DVC) 有权
公开(公告)号：US09754724B2
公开(公告)日：2017-09-05
申请号：US14898678
申请日：2014-06-04
申请人： CAVENDISH KINETICS, INC.
发明人： Robertus Petrus Van Kampen , Richard L. Knipe
IPC分类号： H01L49/02 , H01G5/16 , H01G5/18
CPC分类号： H01G5/16 , H01G5/18 , H01L28/60
摘要： The present invention generally relates to a MEMS digital variable capacitor (DVC) (900) and a method for manufacture thereof. The movable plate (938) within a MEMS DVC should have the same stress level to ensure proper operation of the MEMS DVC. To obtain the same stress level, the movable plate is decoupled from CMOS ground during fabrication. The movable plate is only electrically coupled to CMOS ground after the plate has been completely formed. The coupling occurs by using the same layer (948) that forms the pull-up electrode as the layer that electrically couples the movable plate to CMOS ground. As the same layer couples the movable plate to CMOS ground and also provides the pull-up electrode for the MEMS DVC, the deposition occurs in the same processing step. By electrically coupling the movable plate to CMOS ground after formation, the stress in each of the layers of the movable plate can be substantially identical.

43. 发明授权

US09711291B2 MEMS digital variable capacitor design with high linearity 有权
公开(公告)号：US09711291B2
公开(公告)日：2017-07-18
申请号：US14779542
申请日：2014-04-02
申请人： CAVENDISH KINETICS, INC.
发明人： Richard L. Knipe , Robertus Petrus Van Kampen
IPC分类号： H01G5/18 , B81B3/00 , H01G5/16 , H01H59/00 , H01G5/011 , H01G5/013
CPC分类号： H01G5/18 , B81B3/0051 , B81B3/007 , B81B2201/0221 , H01G5/011 , H01G5/0136 , H01G5/16 , H01H59/0009 , H01H2059/0072
摘要： The present invention generally relates to a MEMS DVC and a method for fabrication thereof. The MEMS DVC comprises a plate movable from a position spaced a first distance from an RF electrode and a second position spaced a second distance from the RF electrode that is less than the first distance. When in the second position, the plate is spaced from the RF electrode by a dielectric layer that has an RF plateau over the RF electrode. One or more secondary landing contacts and one or more plate bend contacts may be present as well to ensure that the plate obtains a good contact with the RF plateau and a consistent Cmax value can be obtained. On the figure PB contact is the plate bend contact, SL contact is the Second Landing contact and the PD electrode is the Pull Down electrode.

44. 发明申请

US20160207763A1 METHOD OF FORMING PLANAR SACRIFICIAL MATERIAL IN A MEMS DEVICE 有权
标题翻译：在MEMS器件中形成平面非晶材料的方法
公开(公告)号：US20160207763A1
公开(公告)日：2016-07-21
申请号：US14914504
申请日：2014-09-02
申请人： CAVENDISH KINETICS, INC.
发明人： Brian I. TROY , James F. BOBEY , Mickael RENAULT , Joseph Damian Gordon LACEY , Thomas L. MAGUIRE
IPC分类号： B81C1/00 , H01G5/16
CPC分类号： B81C1/00611 , H01G5/16
摘要： The present invention generally relates to a method of fabricating a MEMS device. In the MEMS device, a movable plate is disposed within a cavity such that the movable plate is movable within the cavity. To form the cavity, sacrificial material may be deposited and then the material of the movable plate is deposited thereover. The sacrificial material is removed to free the mov able plate to move within the cavity. The sacrificial material, once deposited, may not be sufficiently planar because the height difference between the lowest point and the highest point of the sacrificial material may be quite high. To ensure the movable plate is sufficiently planar, the planarity of the sacrificial material should be maximized. To maximize the surface planarity of the sacrificial material, the sacrificial material may be deposited and then conductive heated to permit the sacrificial material to reflow and thus, be planarized.
摘要翻译：本发明一般涉及制造MEMS器件的方法。在MEMS装置中，可动板设置在空腔内，使得可移动板可在空腔内移动。为了形成空腔，可以沉积牺牲材料，然后将可移动板的材料沉积在其上。去除牺牲材料以使可移动板在空腔内移动。由于牺牲材料的最低点和最高点之间的高度差可能相当高，牺牲材料一旦被沉积就可能不够平坦。为了确保可动板足够平坦，牺牲材料的平面度应该被最大化。为了使牺牲材料的表面平坦度最大化，可以沉积牺牲材料，然后进行导电加热，以使牺牲材料回流并因此被平坦化。

45. 发明申请

US20140036345A1 FABRICATION OF A FLOATING ROCKER MEMS DEVICE FOR LIGHT MODULATION 有权
标题翻译：用于轻型调制的浮动式MEMS器件的制造
公开(公告)号：US20140036345A1
公开(公告)日：2014-02-06
申请号：US13941851
申请日：2013-07-15
申请人： CAVENDISH KINETICS INC.
发明人： Charles Gordon SMITH , Richard L. KNIPE
IPC分类号： G02B26/08
CPC分类号： G02B26/0833 , B81B2201/042 , B81C1/00317 , B81C2203/0136 , B81C2203/0145 , G02B26/0841
摘要： The current disclosure shows how to make a fast switching array of mirrors for projection displays. Because the mirror does not have a via in the middle connecting to the underlying spring support, there is an improved contrast ratio that results from not having light scatter off the legs or vias like existing technologies. Because there are no supporting contacts, the mirror can be made smaller making smaller pixels that can be used to make higher density displays. In addition, because there is not restoring force from any supporting spring support, the mirror stays in place facing one or other direction due to adhesion. This means there is no need to use a voltage to hold the mirror in position. This means that less power is required to run the display.
摘要翻译：目前的公开内容显示了如何制造用于投影显示器的反射镜的快速切换阵列。因为反射镜在连接到下面的弹簧支撑件的中间没有通孔，所以存在改善的对比度，这是由于不像现有技术那样从腿部或通孔没有光散射。因为没有支撑触点，镜子可以做得更小，从而可以用较小的像素来制作更高密度的显示器。另外，由于没有来自任何支撑弹簧支撑件的恢复力，因为粘附，反射镜保持在面向一个或另一个方向的位置。这意味着不需要使用电压将镜子保持在适当的位置。这意味着运行显示器需要较少的电力。

46. 发明授权

US11417487B2 MEMS RF-switch with near-zero impact landing 有权
公开(公告)号：US11417487B2
公开(公告)日：2022-08-16
申请号：US16343912
申请日：2017-09-14
申请人： CAVENDISH KINETICS, INC.
发明人： Richard L. Knipe , Robertus Petrus Van Kampen , James Douglas Huffman , Lance Barron
IPC分类号： H01H59/00 , H01H1/00
摘要： The present disclosure generally relates to the design of a MEMS ohmic switch which provides for a low-impact landing of the MEMS device movable plate on the RF contact and a high restoring force for breaking the contacts to improve the lifetime of the switch. The switch has at least one contact electrode disposed off-center of the switch device and also has a secondary landing post disposed near the center of the switch device. The secondary landing post extends to a greater height above the substrate as compared to the RF contact of the contact electrode so that the movable plate contacts the secondary landing post first and then gently lands on the RF contact. Upon release, the movable plate will disengage from the RF contact prior to disengaging from the secondary landing post and have a longer lifetime due to the high restoring force.

47. 发明授权

US10964505B2 Naturally closed MEMs switch for ESD protection 有权
公开(公告)号：US10964505B2
公开(公告)日：2021-03-30
申请号：US15772132
申请日：2016-11-15
申请人： CAVENDISH KINETICS, INC.
发明人： Robertus Petrus Van Kampen , Lance Barron , Roberto Gaddi , Richard L. Knipe
IPC分类号： H01H59/00 , H01L23/60 , H01H1/00
摘要： The present disclosure generally relates to a MEMS device for reducing ESD. A contacting switch is used to ensure that there is a closed electrical contact between two electrodes even if there is no applied bias voltage.

48. 发明授权

US10749247B2 Multi-resonant antenna structure 有权
公开(公告)号：US10749247B2
公开(公告)日：2020-08-18
申请号：US16342935
申请日：2017-10-18
申请人： CAVENDISH KINETICS, INC.
发明人： Paul Anthony Tornatta, Jr. , Young Joong Lee , Hak Ryol Kim
IPC分类号： H04B1/40 , H04M1/02 , H01Q1/24 , H01Q5/30
摘要： The present disclosure generally relates to any device capable of wireless communication, such as a mobile telephone or wearable device, having one or more antennas. The antenna has a structure with multiple resonances to cover all commercial wireless communications bands from a single antenna with one feed connection to the main radio system. The antenna is usable where there are two highly efficient, closely spaced resonances in the lower part of the frequency band. One of those resonances can be adjusted in real time by using a variable reactance attached to the radiator while the other resonance is fixed.

49. 发明授权

US10566163B2 MEMS RF-switch with controlled contact landing 有权
公开(公告)号：US10566163B2
公开(公告)日：2020-02-18
申请号：US15770705
申请日：2016-11-15
申请人： CAVENDISH KINETICS, INC.
发明人： Robertus Petrus Van Kampen , Richard L. Knipe , Mickael Renault , Shibajyoti Ghosh Dastider , Jacques Marcel Muyango
IPC分类号： H01H59/00 , B81B3/00 , H01G5/16
摘要： A MEMS switch contains an RF electrode 102, pull-down electrodes 104 and anchor electrodes 108 located on a substrate 101. A plurality of islands 226 are provided in the pull-down electrode and electrically isolated therefrom. On top of the RF electrode is the RF contact 206 to which the MEMS-bridge 212, 214 forms an ohmic contact in the pulled-down state. The pull-down electrodes 104 are covered with a dielectric layer 202 to avoid a short-circuit between the bridge and the pull-down electrode. Contact stoppers 224 are disposed on the dielectric layer 202 at locations corresponding to the islands 226, and the resulting gap between the bridge and the dielectric layer in the pulled-down state reduces dielectric charging. In alternative embodiments, the contact stoppers are provide within the dielectric layer 202 or disposed on the islands themselves and under the dielectric layer. The switch provides good controllability of the contact resistance of MEMS switches over a wide voltage operating range.

50. 发明授权

US10301173B2 RF MEMS electrodes with limited grain growth 有权
公开(公告)号：US10301173B2
公开(公告)日：2019-05-28
申请号：US14914071
申请日：2014-08-27
申请人： CAVENDISH KINETICS, INC.
发明人： Mickael Renault
IPC分类号： H01L29/84 , B81B7/00 , B81B3/00 , B81C1/00 , H01G5/18 , H01H59/00 , H01H1/00
摘要： The present invention generally relates to an RF MEMS DVC and a method for manufacture thereof. To ensure that undesired grain growth does not occur and contribute to an uneven RF electrode, a multilayer stack comprising an AlCu layer and a layer containing titanium may be used. The titanium diffuses into the AlCu layer at higher temperatures such that the grain growth of the AlCu will be inhibited and the switching element can be fabricated with a consistent structure, which leads to a consistent, predictable capacitance during operation.

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