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    • 43. 发明授权
    • Multilayer ceramic capacitor
    • 多层陶瓷电容器
    • US06987662B2
    • 2006-01-17
    • US11043267
    • 2005-01-27
    • Takako HibiKazunori NoguchiMari MiyauchiAkira Sato
    • Takako HibiKazunori NoguchiMari MiyauchiAkira Sato
    • H01G4/20H01G4/06
    • H01G4/30H01G4/12
    • A multilayer ceramic capacitor 1 having internal electrode layers 3, internal dielectric layers 2 having the thickness of less than 2 μm, and external dielectric layers 20 wherein; the internal dielectric layers 2 and the external dielectric layers 20 include a plural number of dielectric particles 2a, 20a, and when y1 is ratio(D50a/D50b) of D50a and D50b where D50a is an average particle size of dielectric particles 2a included in the internal dielectric layers 2 and D50b is an average particle size of dielectric particles 20a included in the external dielectric layer 20 and located at least 5 μm away from an internal electrode layer 3a, arranged outermost part of all the internal electrode layers, to the stacked direction, and x is thickness of the internal dielectric layer 2, y1 and x satisfy the following equations, y1≦−0.75x+2.275 and y1≧−0.75x+1.675. According to the present invention, even when thickness of internal dielectric layers 2 were made thinner, a multilayer ceramic capacitor 1 wherein improvements in all kinds of electric characteristics, specially an improvement in TC bias characteristic while having sufficient dielectric constant can be expected.
    • 具有内部电极层3,厚度小于2μm的内部电介质层2和外部电介质层20的多层陶瓷电容器1,其中: 内部电介质层2和外部电介质层20包括多个电介质粒子2a,20a,当y1为D50a和D50b的比率(D50a / D50b)时,D50 a是包含在内部电介质层2中的电介质粒子2a的平均粒径,D50b是包含在外部电介质层20中并且位于离内部电极至少5m的电介质粒子20a的平均粒径 层3a,所有内部电极层的最外面的部分为堆叠方向,x为内部电介质层2的厚度,y 1和x满足下列等式:y 1 <= - 0.75×+ 2.275和y 1> = - 0.75x + 1.675。 根据本发明,即使使内部电介质层2的厚度变薄,也可以期望具有各种电特性的改善的多层陶瓷电容器1,特别是具有足够介电常数的TC偏置特性的改善。
    • 45. 发明授权
    • Multilayer ceramic capacitor
    • 多层陶瓷电容器
    • US06975502B2
    • 2005-12-13
    • US11094604
    • 2005-03-31
    • Takako MurosawaMari MiyauchiKazunori NoguchiAkira Sato
    • Takako MurosawaMari MiyauchiKazunori NoguchiAkira Sato
    • H01G4/12H01G4/30H01G4/06H01G4/20
    • H01G4/12H01G4/30
    • A multilayer ceramic capacitor including an internal electrode layer, an internal dielectric layer having a thickness of less than 2 μm, and an external dielectric layer is provided, wherein the internal dielectric layer and external dielectric layer contain a plurality of dielectric particles, and when assuming that an average particle diameter of the entire dielectric particles in the internal dielectric layer is D50a (unit: μm), an average particle diameter of the entire dielectric particles existing at a position being away at least by 5 μm from the outermost internal electrode layer in the thickness direction is D50b (unit: μm), a ratio (D50a/D50b) of the D50a and D50b is y (no unit), standard deviation of a particle size distribution of the entire dielectric particles in the internal dielectric layer is σ (no unit), and a ratio that dielectric particles (coarse particles) having an average particle diameter of 2.25 times of the D50a exist in the entire dielectric particles is p (unit: %), the y and x satisfy a relationship of y −0.75x+1.740, the σ satisfies σ
    • 提供包括内部电极层,厚度小于2μm的内部电介质层和外部电介质层的多层陶瓷电容器,其中内部电介质层和外部电介质层包含多个电介质颗粒,并且当假定 内部电介质层中的整个电介质颗粒的平均粒径为D50a(单位:mum),存在于距离最外部内部电极层至少离开5μm的位置的整个电介质粒子的平均粒径 厚度方向为D50b(单位:mum),D50a和D50b的比率(D50a / D50b)为y(无单位),内部电介质层中的整个电介质粒子的粒度分布的标准偏差为σ( 无单位),并且在整个电介质粒子中存在平均粒径为D50a的2.25倍的电介质粒子(粗粒子)的比例 s为p(单位:%),y和x满足y <-0.75x + 2.015和y> -0.75x + 1.740的关系,σ满足σ<0.091,p满足p <2.85% 即使当内部电介质层变薄时,也可以期望改善TC偏压特性,同时保持各种电特性,特别是足够的介电常数。
    • 47. 发明授权
    • Buckle device
    • 带扣装置
    • US06922875B2
    • 2005-08-02
    • US10479465
    • 2002-03-22
    • Akira SatoNaoki Toyokawa
    • Akira SatoNaoki Toyokawa
    • A44B11/25B60N2/28A44B11/26
    • A44B11/2549B60N2/2803Y10T24/45084Y10T24/45618
    • A buckle apparatus includes an insertion control subassembly press-operating an ejector when a pair of tongue parts are simultaneously inserted into a buckle body for allowing insertion up to an engaging position between the respective tongue parts and an engaging member while regulating the press operation by posture tilting of the ejector when only one tongue part is inserted. The insertion control subassembly includes a frame member having a guide rail part reciprocatively slidingly guiding the ejector along the direction of the press operation while including a stopper part separably coming into contact with the ejector in posture tilting from an insertion allowing posture for regulating movement in the direction of the press operation on the guide rail part.
    • 带扣设备包括插入控制子组件,当一对舌片部件同时插入到带扣体中时,压入操作喷射器,以便允许插入到各个舌片部件之间的接合位置和接合部件之间,同时通过姿势调节按压操作 当仅插入一个舌部时,喷射器倾斜。 插入控制子组件包括框架构件,该框架构件具有导轨部件,其沿着冲压操作的方向往复滑动地引导喷射器,同时包括一个可分离地与喷射器接触的止动部件,其姿态从用于调节运动的插入允许姿势倾斜 在导轨部分上按压操作的方向。
    • 49. 发明授权
    • Flash memory for improving write access time
    • 闪存用于改善写入访问时间
    • US06917543B2
    • 2005-07-12
    • US10650665
    • 2003-08-29
    • Akira Sato
    • Akira Sato
    • G11C16/02G11C7/22G11C11/413G11C16/10G11C16/06
    • G11C7/22G11C16/10G11C2207/229G11C2216/14
    • A flash memory including a flash memory cell array, a page buffer, a comparator circuit, and a verify flag buffer. The flash memory cell array includes a plurality of blocks. The page buffer temporarily stores therein write data received from an external system. The page buffer includes pages. The comparator circuit executes pre-verification through comparing data stored in the page buffer with data stored in addressed one of the blocks. The verify flag buffer stores therein verify flags respectively associated with the pages. Each of the verify flags is switched in response to update of associated one of the pages. The comparator circuit executes pre-verification with respect to one of the pages, the one being associated with unswitched one of the verify flags, while skipping pre-verification with respect to another of the pages associated with the switched one of the verify flags.
    • 包括闪存单元阵列,页缓冲器,比较器电路和验证标志缓冲器的闪速存储器。 闪存单元阵列包括多个块。 页面缓冲器临时存储从外部系统接收的写入数据。 页面缓冲区包含页面。 比较器电路通过将存储在页缓冲器中的数据与存储在寻址的一个块中的数据进行比较来执行预验证。 验证标志缓冲器存储分别与页面相关联的验证标志。 响应于相关联的一个页面的更新来切换每个验证标志。 比较器电路相对于其中一个页面执行预验证,该页面之一与验证标志中的未切换的一个页面相关联,同时针对与切换的验证标志之一相关联的另一个页面跳过预验证。