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41. 发明申请

US20160276957A1 ELECTRIC GENERATING ELEMENT AND ELECTRIC GENERATOR 审中-公开
标题翻译：电力元件和电力发电机
公开(公告)号：US20160276957A1
公开(公告)日：2016-09-22
申请号：US15052329
申请日：2016-02-24
申请人： Tomoaki SUGAWARA , Junichiro Natori , Tsuneaki Kondoh , Yuko Arizumi , Mizuki Otagiri , Takahiro Imai
发明人： Tomoaki SUGAWARA , Junichiro Natori , Tsuneaki Kondoh , Yuko Arizumi , Mizuki Otagiri , Takahiro Imai
IPC分类号： H02N1/04
CPC分类号： H02N1/04
摘要： To provide an electric generating element including a first electrode; an intermediate layer; and a second electrode, the first electrode, the intermediate layer, and the second electrode being disposed in this order, the intermediate layer being in contact with at least one of the first electrode and the second electrode, wherein the intermediate layer microscopically moves in a horizontal direction relative to a surface of the first electrode and a surface of the second electrode, when the intermediate layer is pressed in a vertical direction relative to the surface of the first electrode and the surface of the second electrode in a state that the intermediate layer is not secured with at least one of the first electrode and the second electrode.
摘要翻译：提供包括第一电极的发电元件; 中间层以及第二电极，所述第一电极，所述中间层和所述第二电极依次设置，所述中间层与所述第一电极和所述第二电极中的至少一个接触，其中所述中间层在微观上移动水平方向相对于第一电极的表面和第二电极的表面，当中间层在中间层相对于第一电极的表面和第二电极的表面在垂直方向被按压时，中间层不与第一电极和第二电极中的至少一个固定。

42. 发明授权

US08815072B2 Method for producing a surface roughened copper plate 有权
标题翻译：表面粗糙化铜板的制造方法
公开(公告)号：US08815072B2
公开(公告)日：2014-08-26
申请号：US12529560
申请日：2008-03-03
申请人： Hajime Watanabe , Sadao Ishihama , Kiyoteru Yamamoto , Takahiro Imai , Toshihiro Oyoshi
发明人： Hajime Watanabe , Sadao Ishihama , Kiyoteru Yamamoto , Takahiro Imai , Toshihiro Oyoshi
IPC分类号： C25D5/10 , C25D5/18 , C25D5/34 , C25D5/48 , C25D17/00
CPC分类号： C25D5/02 , C25D3/38 , C25D5/10 , C25D5/18 , C25D5/34 , C25D5/48 , C25D7/00 , C25D17/00 , C25F3/02 , H05K1/056 , H05K3/0085 , H05K3/384 , H05K2201/0355 , H05K2203/0307 , H05K2203/0723 , H05K2203/1572 , Y10S205/92 , Y10T428/12361
摘要： A process is provided for roughening both sides of a copper plate by forming protrusions with fine bump shapes on both sides of the copper plate in an electroplating solution for plating copper while reducing deterioration of the electroplating solution. Opposed pairs of negative electrodes (3c) and positive electrodes (3a) are provided in an electroplating copper solution (2), and a copper plate (4) is arranged between the pair of negative electrodes (3c). An anodic treatment for generating copper fine particles on both surfaces of the copper plate (4) is carried out by performing an electrolytic process for three to ten minutes with the copper plate (4) as a positive electrode between the negative electrodes (3c). Then a cathodic treatment is carried out by moving the copper plate (4) between positive electrodes (3a) and performing an electroplating of copper for three to ten minutes with the copper plate (4) as a negative electrode for fixing the copper fine particles onto the surfaces of the copper plate (4). The cycle of anodic and cathodic treatment may be performed more than one time.
摘要翻译：提供一种通过在电镀铜的电镀溶液中形成铜板两侧的微细凸起形状的突起，同时减少电镀液的劣化，来粗化铜板的两面的工艺。在电镀铜溶液（2）中设置相对的负极（3c）和正极（3a），在一对负极（3c）之间配置有铜板（4）。在铜板（4）的两个表面上产生铜微粒的阳极处理通过以铜板（4）为负极（3c）之间的正极进行3〜10分钟的电解处理来进行。然后通过使铜板（4）在正电极（3a）之间移动并执行铜电镀三至十分钟的铜板（4）作为用于将铜微粒固定的负极的铜板（4）进行阴极处理，铜板（4）的表面。阳极和阴极处理的循环可以进行一次以上。

43. 发明申请

US20120033005A1 METHOD FOR SETTING UP DRIVE SIGNAL 审中-公开
标题翻译：设置驱动信号的方法
公开(公告)号：US20120033005A1
公开(公告)日：2012-02-09
申请号：US13275888
申请日：2011-10-18
申请人： Sadaharu Komori , Takeshi Ito , Kei Hiruma , Satoru Katagami , Takahiro Imai , Toru Igarashi
发明人： Sadaharu Komori , Takeshi Ito , Kei Hiruma , Satoru Katagami , Takahiro Imai , Toru Igarashi
IPC分类号： B41J29/38
CPC分类号： B41J2/04588 , B41J2/04535 , B41J2/04541 , B41J2/04551 , B41J2/04581
摘要： A method for setting up a condition for a drive signal in a liquid ejection head that includes a plurality of linearly-arranged nozzles and driving elements provided for each of the nozzles, includes: calculating an average value or a median value of ejection rates for each nozzle relating to a supply of the drive signal under a plurality of conditions; classifying the plurality of nozzles into a plurality of groups based on the average value or the median value of the ejection rates; calculating a proper condition for the drive signal corresponding to each group based on a statistical value of the ejection rate relating to the group; and selecting one proper condition among proper conditions corresponding to the groups so as to set the selected proper condition for each nozzle.
摘要翻译：一种用于设置液体喷射头中的驱动信号的条件的方法，该液体喷射头包括多个线性布置的喷嘴和为每个喷嘴设置的驱动元件，包括：计算每个喷嘴的喷射速率的平均值或中值与多个条件下的驱动信号的供给有关的喷嘴; 基于喷射速率的平均值或中值，将多个喷嘴分类为多个组; 基于与组相关的喷射速率的统计值，计算与每组相对应的驱动信号的适当条件; 并在对应于组的适当条件之间选择一个适当条件，以便为每个喷嘴设置所选择的适当条件。

44. 发明授权

US08047653B2 Si-O containing hydrogenated carbon film, optical device including the same, and method for manufacturing the Si-O containing hydrogenated carbon film and the optical device 失效
标题翻译：含有Si-O的氢化碳膜，含有该Si-O的氢化碳膜的光学元件及其制造方法
公开(公告)号：US08047653B2
公开(公告)日：2011-11-01
申请号：US12514238
申请日：2007-10-31
申请人： Yoshihiro Akahane , Takahiro Imai , Takashi Matsuura , Tetsuya Katayama , Toshihiko Ushiro
发明人： Yoshihiro Akahane , Takahiro Imai , Takashi Matsuura , Tetsuya Katayama , Toshihiko Ushiro
IPC分类号： G02B27/42 , G02B27/28 , G02B5/32 , G02B1/12 , G02F1/29 , H05H1/24
CPC分类号： G02B5/1857 , B82Y30/00 , B82Y40/00 , C01B32/15 , G02B1/105 , G02B1/14 , G02B3/0012 , G02B3/0087 , G02B27/283 , G03H1/02 , G03H2001/0268 , H04N9/3129 , H04N9/3161 , H04N9/3167 , Y10S427/106
摘要： An Si—O containing hydrogenated carbon film as an optical film has a refractive index in a range from at least 1.48 to at most 1.85 for light of 520 nm wavelength and an extinction coefficient of less than 0.15 for light of 248 nm wavelength, wherein the refractive index and the extinction coefficient are decreased with energy beam irradiation. By utilizing such an Si—O containing hydrogenated carbon film, it is possible to provide various types of optical elements and an optical device including the same.
摘要翻译：作为光学膜的含Si-O的氢化碳膜的波长为520nm的波长的折射率为1.48以上至1.85以下，对于波长248nm的光，其消光系数小于0.15，其中，折射率和消光系数随能量束照射而降低。通过使用这种含Si-O的氢化碳膜，可以提供各种类型的光学元件和包括该光学元件的光学器件。

45. 发明授权

US07902734B2 Electron emission element and electron emission element fabrication method 失效
标题翻译：电子发射元件和电子发射元件制造方法
公开(公告)号：US07902734B2
公开(公告)日：2011-03-08
申请号：US11883323
申请日：2006-09-21
申请人： Yoshiyuki Yamamoto , Natsuo Tatsumi , Yoshiki Nishibayashi , Takahiro Imai
发明人： Yoshiyuki Yamamoto , Natsuo Tatsumi , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J1/304
CPC分类号： H01J1/3044 , H01J9/025
摘要： An electron emitting device 2 comprises an electron emitting portion 6 made of diamond. At an electron emission current value of 10 μA or more, a deviation of the electron emission current value over one hour is within ±20% in the electron emitting device 2. The number of occurrence of step-like noise changing the electron emission current value stepwise is once or less per 10 minutes.
摘要翻译：电子发射器件2包括由金刚石制成的电子发射部分6。在电子发射电流值为10μA以上的情况下，电子发射器件2中的电子发射电流值在1小时内的偏差在±20％以内。电子发射电流值变化的阶梯状噪声的发生次数每10分钟一步或一次。

46. 发明授权

US07892356B2 Diamond composite substrate and process for producing the same 失效
标题翻译：金刚石复合基板及其制造方法
公开(公告)号：US07892356B2
公开(公告)日：2011-02-22
申请号：US10510848
申请日：2004-01-22
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C30B29/02
CPC分类号： C23C16/279 , C23C16/274 , C30B29/04 , C30B33/00 , C30B33/06
摘要： It is an object of the present invention to provide a diamond substrate with high toughness, a large surface area, and high quality, for use in semiconductor materials, electronic components, optical components, and so forth, and a method for manufacturing this substrate.A diamond polycrystalline film is laminated on the surface of a diamond monocrystalline substrate to create a diamond composite substrate. In said diamond composite substrate, it is preferable that the main face, which has the largest surface area of the diamond monocrystalline substrate, be the {100} plane, and the diamond polycrystalline film be laminated on the opposite face parallel to this face. The diamond monocrystalline substrate 3 may be made up of a plurality of diamond monocrystals having the same orientation of the main face, and these plurality of diamond monocrystals may be joined by a diamond crystal layer 4 to create a diamond composite substrate 2. The diamond monocrystals may also be used as seed crystals and diamond monocrystals provided by vapor phase synthesis on the surface thereof.
摘要翻译：本发明的目的是提供一种用于半导体材料，电子部件，光学部件等的具有高韧性，大表面积和高质量的金刚石基板及其制造方法。将金刚石多晶膜层压在金刚石单晶衬底的表面上以形成金刚石复合衬底。在所述金刚石复合基板中，优选具有金刚石单晶基板的最大表面积的主面为{100}面，并且金刚石多晶膜层叠在与该面平行的相对面上。金刚石单晶衬底3可以由具有相同方向的主面的多个金刚石单晶组成，并且这些多个金刚石单晶可以通过金刚石晶体层4连接以形成金刚石复合衬底2.金刚石单晶也可以用作通过气相合成在其表面上提供的晶种和金刚石单晶。

47. 发明申请

US20100304176A1 PRODUCTION METHOD AND DEVICE OF SURFACE ROUGHENED COPPER PLATE, AND SURFACE ROUGHENED COPPER PLATE 有权
标题翻译：表面粗糙化铜板和表面粗化铜板的生产方法和装置
公开(公告)号：US20100304176A1
公开(公告)日：2010-12-02
申请号：US12529560
申请日：2008-03-03
申请人： Hajime Watanabe , Sadao Ishihawa , Kiyoteru Yamamoto , Takahiro Imai , Toshihiro Oyoshi
发明人： Hajime Watanabe , Sadao Ishihawa , Kiyoteru Yamamoto , Takahiro Imai , Toshihiro Oyoshi
IPC分类号： B32B3/10 , C25D17/10
CPC分类号： C25D5/02 , C25D3/38 , C25D5/10 , C25D5/18 , C25D5/34 , C25D5/48 , C25D7/00 , C25D17/00 , C25F3/02 , H05K1/056 , H05K3/0085 , H05K3/384 , H05K2201/0355 , H05K2203/0307 , H05K2203/0723 , H05K2203/1572 , Y10S205/92 , Y10T428/12361
摘要： Problems to be Solved: To provide a process for roughening both sides of a copper plate by forming a protrusion with a fine bump shape on the both sides of the copper plate, and then to provide a process for a deterioration of an electroplating solution for plating copper to become hard to progress therein.Means for Solving the Problems: First of all, there is designed to be arranged electrodes (3, 3) as a similar pole for therebetween to be opposed to each other in an electroplating copper solution 2, and then to be arranged a copper plate 4 at therebetween. And then at first there becomes to be performed an anodic treatment for generating a copper fine particles on both surfaces of the copper plate 4, by performing an electrolytic process with the copper plate 4 as a positive electrode and the electrodes 3 as negative electrodes. And then thereafter there becomes to be performed a cathodic treatment, by performing an electroplating of copper with the copper plate 4 as a negative electrode and the electrodes 3 as positive electrodes, for the copper fine particles to be fixed onto the surfaces of the copper plate 4. Furthermore, there becomes to be formed the above mentioned protrusion with the fine bump shape thereon, by performing the anodic treatment and then the cathodic treatment as not less than one cycle thereof.
摘要翻译：要解决的问题：提供一种通过在铜板的两面上形成具有微小凸起形状的突起来使铜板的两面粗糙化的方法，然后提供用于电镀的电镀液的劣化的工艺铜变得难以进展。解决问题的手段：首先，设计为在电镀铜溶液2中彼此相对的彼此相对的极性的布置的电极（3,3），然后设置为铜板4 在它们之间。首先，通过以铜板4为正极进行电解处理，将电极3作为负极进行电镀处理，在铜板4的两面上进行阳极处理，生成铜微粒。然后，进行阴极处理，通过以铜板4作为负极进行铜的电镀，将电极3作为正极进行阴极处理，将铜微粒固定在铜板的表面上此外，通过进行阳极处理，然后阴极处理为不止一个循环，形成上述具有微小凸起形状的突起。

48. 发明授权

US07771693B2 Diamond single crystal substrate manufacturing method 有权
标题翻译：钻石单晶基板制造方法
公开(公告)号：US07771693B2
公开(公告)日：2010-08-10
申请号：US12192515
申请日：2008-08-15
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： B01J3/06
CPC分类号： C30B33/00 , C30B25/20 , C30B29/04 , Y10T428/30
摘要： A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion etching, prior to single crystal growth, at least 0.5 μm and less than 400 μm, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing from the surface of the seed substrate the work-affected layers caused by mechanical polishing; and growing then a single crystal thereon. The manufacturing method provides a diamond single crystal substrate having a high quality, large size, and no unintentional impurity inclusions, and suitable for use as semiconductor materials, electronic components, optical components or the like.
摘要翻译：一种用于通过气相合成从金刚石单晶种子基底生长单晶的金刚石单晶衬底制造方法，包括在单晶生长之前通过反应离子蚀刻腐蚀掉至少0.5μm且小于400μm，将已经机械抛光的种子基片的表面的厚度除去，从而从种子基片的表面除去由机械抛光引起的受影响层; 然后在其上生长单晶。该制造方法提供具有高质量，大尺寸和无意的杂质夹杂物的金刚石单晶衬底，并且适合用作半导体材料，电子部件，光学部件等。

49. 发明申请

US20100111812A1 SINGLE CRYSTALLINE DIAMOND AND PRODUCING METHOD THEREOF 审中-公开
标题翻译：单晶金刚石及其生产方法
公开(公告)号：US20100111812A1
公开(公告)日：2010-05-06
申请号：US12684684
申请日：2010-01-08
申请人： Kiichi MEGURO , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi MEGURO , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C01B31/06 , C30B25/00
CPC分类号： C30B29/04 , C30B25/20
摘要： The object of the present invention is to obtain a high quality single crystalline diamond that has less distortion and large area suitable for semiconductor device substrates or an optical component material. The present invention is a single crystalline diamond produced by chemical vapor deposition, wherein, when a linear polarized light which is composed of two linear polarized lights perpendicular to each other is introduced into one main face of the single crystalline diamond, a maximum value of a retardation between the two linear polarized lights perpendicular to each other which come out from an opposite main face is not more than 50 μm at maximum per a thickness of 100 μm across an entire of the single crystalline diamond, and also a method for producing the diamond.
摘要翻译：本发明的目的是获得具有较小变形和大面积的高半导体器件衬底或光学部件材料的高质量单晶金刚石。本发明是通过化学气相沉积法生产的单晶金刚石，其中当由彼此垂直的两个线性偏振光组成的线性偏振光被引入单晶金刚石的一个主面时，其最大值为相对于从相对的主面出来的彼此垂直的两个线偏振光之间的延迟在整个单晶金刚石上的最大厚度为100μm时最大不超过50μm，还有用于制造金刚石的方法。

50. 发明申请

US20100039707A1 SI-O CONTAINING HYDROGENATED CARBON FILM, OPTICAL DEVICE INCLUDING THE SAME, AND METHOD FOR MANUFACTURING THE SI-O CONTAINING HYDROGENATED CARBON FILM AND THE OPTICAL DEVICE 失效
标题翻译：包含加氢碳膜的SI-O，包括其的光学装置以及用于制造含有SI-O的氢化碳膜和光学装置的方法
公开(公告)号：US20100039707A1
公开(公告)日：2010-02-18
申请号：US12514238
申请日：2007-10-31
申请人： Yoshihiro Akahane , Takahiro Imai , Takashi Matsuura , Tetsuya Katayama , Toshihiko Ushiro
发明人： Yoshihiro Akahane , Takahiro Imai , Takashi Matsuura , Tetsuya Katayama , Toshihiko Ushiro
IPC分类号： G02B27/42 , G02F1/29 , G02B27/28 , G02B5/32 , H05H1/24 , G02B1/12
CPC分类号： G02B5/1857 , B82Y30/00 , B82Y40/00 , C01B32/15 , G02B1/105 , G02B1/14 , G02B3/0012 , G02B3/0087 , G02B27/283 , G03H1/02 , G03H2001/0268 , H04N9/3129 , H04N9/3161 , H04N9/3167 , Y10S427/106
摘要： An Si—O containing hydrogenated carbon film as an optical film has a refractive index in a range from at least 1.48 to at most 1.85 for light of 520 nm wavelength and an extinction coefficient of less than 0.15 for light of 248 nm wavelength, wherein the refractive index and the extinction coefficient are decreased with energy beam irradiation. By utilizing such an Si—O containing hydrogenated carbon film, it is possible to provide various types of optical elements and an optical device including the same.
摘要翻译：作为光学膜的含Si-O的氢化碳膜的波长为520nm的波长的折射率为1.48以上至1.85以下，对于波长248nm的光，其消光系数小于0.15，其中，折射率和消光系数随能量束照射而降低。通过使用这种含Si-O的氢化碳膜，可以提供各种类型的光学元件和包括该光学元件的光学器件。

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