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    • 6. 发明授权
    • Methods and materials for anchoring gapfill metals
    • 锚定缝隙金属的方法和材料
    • US09382627B2
    • 2016-07-05
    • US14515816
    • 2014-10-16
    • Lam Research Corporation
    • Artur Kolics
    • C23C18/18B32B15/04B32B3/30H01L21/768C23C18/52
    • C23C18/1882B32B3/30B32B15/04C23C18/52H01L21/76831H01L21/76879Y10T428/12361Y10T428/12389Y10T428/24917
    • One aspect of the present invention includes a method of fabricating an electronic device. According to one embodiment, the method comprises providing a substrate having dielectric oxide surface areas adjacent to electrically conductive surface areas, chemically bonding an anchor compound with the dielectric oxide surface areas so as to form an anchor layer, initiating the growth of a metal using the electrically conductive surface areas and growing the metal so that the anchor layer also bonds with the metal. The anchor compound has at least one functional group capable of forming a chemical bond with the oxide surface and has at least one functional group capable of forming a chemical bond with the metal. Another aspect of the present invention is an electronic device. A third aspect of the present invention is a solution comprising the anchor compound.
    • 本发明的一个方面包括制造电子设备的方法。 根据一个实施例,所述方法包括提供具有与导电表面区域相邻的电介质氧化物表面区域的基板,将锚固化合物与电介质氧化物表面区域化学结合,以形成锚定层,从而使用 导电表面积并使金属生长,使得锚定层也与金属结合。 锚化合物具有至少一个能够与氧化物表面形成化学键的官能团,并且具有至少一个能够与金属形成化学键的官能团。 本发明的另一方面是电子设备。 本发明的第三方面是包含锚化合物的溶液。
    • 8. 发明授权
    • Thin-film transparent conductive structure and devices made therewith
    • 薄膜透明导电结构和由其制成的器件
    • US09324966B2
    • 2016-04-26
    • US13833161
    • 2013-03-15
    • E I DU PONT DE NEMOURS AND COMPANY
    • Wei Wu
    • H01L31/0224H01L51/52H01L31/18
    • H01L51/5225H01L31/1884H01L51/5209H01L51/5234Y02E10/50Y10T428/12361Y10T428/24331
    • A transparent conductive structure useful in the fabrication of electrical, electronic, and optoelectronic devices is provided by a mesh-like metallic structure in the form of a thin film having a plurality of apertures, e.g. one having an average size of 250 nm to 425 nm as measured in the largest dimension and an average nearest-neighbor spacing of 300 nm to 450 nm. In another aspect, the metallic thin film has plural sublayers of different metals, and may have apertures up to 2 μm in size and an average nearest-neighbor spacing of up to 2.5 μm. The metallic thin film may be 20 to 200 nm thick, and may be formed on a flexible or rigid substrate or on a device itself. The structure exhibits a transparency enhanced over a value determined simply by the fraction of the area of the metallic film occupied by the apertures.
    • 用于制造电气,电子和光电器件的透明导电结构由具有多个孔的薄膜形式的网状金属结构提供,例如, 一个具有250nm至425nm的平均尺寸,其最大尺寸和300nm至450nm的平均最近邻间距测量。 另一方面,金属薄膜具有不同金属的多个子层,并且可以具有高达2μm的孔径和高达2.5μm的平均最近相邻间隔。 金属薄膜可以是20至200nm厚,并且可以形成在柔性或刚性基底上或器件本身上。 该结构显示出比由孔所占据的金属膜的面积的分数简单确定的值提高的透明度。