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    • 41. 发明授权
    • Data output circuit for semiconductor memory apparatus
    • 半导体存储装置的数据输出电路
    • US07808841B2
    • 2010-10-05
    • US12169568
    • 2008-07-08
    • Hae-Rang ChoiKun-Woo ParkYong-Ju KimHee-Woong SongIc-Su OhHyung-Soo KimTae-Jin HwangJi-Wang Lee
    • Hae-Rang ChoiKun-Woo ParkYong-Ju KimHee-Woong SongIc-Su OhHyung-Soo KimTae-Jin HwangJi-Wang Lee
    • G11C7/10G11C7/06G11C7/00
    • G11C7/1051G11C7/1057G11C29/028G11C29/1201G11C29/50
    • A data output circuit for a semiconductor memory apparatus includes a driver control signal generating unit that has a plurality of control signal generating units, each of which generates a driver unit control signal in response to a test signal during a test, and generates the driver unit control signal according to whether or not a fuse is cut after the test is completed, a first driver that has a plurality of driver units, each of which is activated in response to the driver unit control signal to drive a first data signal as an input signal and to output the driven first data signal to an output node, a signal combining unit that generates a first driver control signal in response to the driver unit control signal and an enable signal, and a second driver that has a plurality of driver units, each of which is activated in response to the first driver control signal to drive a second data signal as an input signal and to output the driven second data signal to the output node, and the number of driver units being two or more times as much as the number of driver units in the first driver. A voltage level on the output node is the voltage level of an output signal.
    • 一种用于半导体存储装置的数据输出电路,包括具有多个控制信号生成单元的驱动器控制信号生成单元,每个控制信号生成单元响应于测试期间的测试信号生成驱动单元控制信号,并且生成驱动单元 根据在测试完成之后是否切断熔丝的控制信号,具有多个驱动单元的第一驱动器,每个驱动器单元响应于驱动单元控制信号被激活以驱动第一数据信号作为输入 信号并将驱动的第一数据信号输出到输出节点;响应于驱动单元控制信号和使能信号产生第一驱动器控制信号的信号组合单元,以及具有多个驱动器单元的第二驱动器, 其中的每一个响应于第一驱动器控制信号被激活,以驱动第二数据信号作为输入信号,并将驱动的第二数据信号输出到输出节点;以及 驱动器单元的数量是第一驱动器中的驱动器单元的数量的两倍或更多倍。 输出节点上的电压电平是输出信号的电压电平。
    • 46. 发明授权
    • Receiver circuit of semiconductor memory apparatus
    • 半导体存储器的接收电路
    • US07733727B2
    • 2010-06-08
    • US12172108
    • 2008-07-11
    • Tae-Jin HwangYong-Ju KimHee-Woong SongIc-Su OhHyung-Soo KimHae-Rang ChoiJi-Wang Lee
    • Tae-Jin HwangYong-Ju KimHee-Woong SongIc-Su OhHyung-Soo KimHae-Rang ChoiJi-Wang Lee
    • G11C11/00
    • G11C7/1078G11C7/1084G11C7/1087G11C7/1093G11C7/22G11C7/222
    • A receiver circuit is described herein, comprising a first data determining unit configured to detect and amplify a voltage level difference between first and second external data and generate first and second sense signals and to generate first internal data in response to the first and second sense signals, a first offset control unit configured to generate first and second offset signals in response to the first and second sense signals, the first and second offset signals swinging between a maximum voltage level and a minimum voltage level determined based on a first code, a second data determining unit configured to detect and amplify the voltage level difference between the first and second external data to generate third and fourth sense signals and to generate second internal data in response to the third and fourth sense signals; and a second offset control unit for generating third and fourth offset signals in response to the third and fourth sense signals, the third and fourth offset signals swinging between a maximum voltage level and a minimum voltage level determined based on a second code, wherein the first data determining unit is configured to determine setup time and hold time of the first internal data in response to the third and fourth offset signals, and wherein the second data determining unit is configured to determine setup time and hold time of the second internal data in response to the first and second offset signals.
    • 本文描述了一种接收器电路,包括:第一数据确定单元,被配置为检测和放大第一和第二外部数据之间的电压电平差,并产生第一和第二感测信号,并响应于第一和第二感测信号产生第一内部数据 第一偏移控制单元,被配置为响应于第一和第二感测信号产生第一和第二偏移信号,第一和第二偏移信号在基于第一代码确定的最大电压电平和最小电压电平之间摆动,第二偏移控制单元 数据确定单元,被配置为检测和放大第一和第二外部数据之间的电压电平差,以产生第三和第四感测信号,并响应于第三和第四感测信号产生第二内部数据; 以及第二偏移控制单元,用于响应于第三和第四感测信号产生第三和第四偏移信号,第三和第四偏移信号在基于第二代码确定的最大电压电平和最小电压电平之间摆动,其中第一和第二偏移信号 数据确定单元被配置为响应于第三和第四偏移信号来确定第一内部数据的建立时间和保持时间,并且其中第二数据确定单元被配置为响应于确定第二内部数据的建立时间和保持时间 到第一和第二偏移信号。
    • 50. 发明授权
    • Data receiver of semiconductor integrated circuit
    • 半导体集成电路数据接收器
    • US08149953B2
    • 2012-04-03
    • US12177829
    • 2008-07-22
    • Hyung-Soo KimKun-Woo ParkYong-Ju KimHee-Woong SongIc-Su OhTae-Jin HwangHae-Rang ChoiJi-Wang Lee
    • Hyung-Soo KimKun-Woo ParkYong-Ju KimHee-Woong SongIc-Su OhTae-Jin HwangHae-Rang ChoiJi-Wang Lee
    • H03K9/00
    • H03K19/09425
    • A semiconductor integrated circuit equipped with an equalizer which has a circuit structure simpler than that of a related equalizer according to an FFE scheme or a DFE scheme and is capable of preventing a noise component from being amplified. The data receiver includes a plurality of receiver units, wherein each receiver unit includes a plurality of level detectors which detect different levels, and an encoder, in which the level detectors receive data according to a clock signal having a predetermined phase difference and perform an amplification operation including an equalization function based on feedback data, thereby outputting an amplification signal, and wherein level detectors of one receiver unit receive an amplification signal, as the feedback data, from level detectors of another receiver unit that receives a first clock signal having a phase more advanced than a phase of a second clock signal received in one receiver unit.
    • 一种配备有均衡器的半导体集成电路,其具有比根据FFE方案或DFE方案的相关均衡器的电路结构简单的电路结构,并且能够防止噪声分量被放大。 数据接收机包括多个接收机单元,其中每个接收机单元包括检测不同电平的多个电平检测器和编码器,其中电平检测器根据具有预定相位差的时钟信号接收数据并执行放大 操作包括基于反馈数据的均衡功能,从而输出放大信号,并且其中一个接收器单元的电平检测器从另一接收器单元的电平检测器接收作为反馈数据的放大信号,该接收器单元接收具有相位的第一时钟信号 比在一个接收机单元中接收的第二时钟信号的相位更先进。