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1. 发明授权

US09263114B2 Electronic device 有权
标题翻译：电子设备
公开(公告)号：US09263114B2
公开(公告)日：2016-02-16
申请号：US14563690
申请日：2014-12-08
申请人： Ji-Wang Lee , Dong-Keun Kim , Masahiro Takahashi , Tsuneo Inaba
发明人： Ji-Wang Lee , Dong-Keun Kim , Masahiro Takahashi , Tsuneo Inaba
IPC分类号： G11C11/00 , G11C11/16 , G11C13/00 , G11C11/15 , G11C11/56
CPC分类号： G11C11/1673 , G11C11/15 , G11C11/16 , G11C11/1659 , G11C11/5607 , G11C11/5657 , G11C13/0004 , G11C13/0007 , G11C13/004 , G11C16/28 , G11C2013/0054 , G11C2213/79
摘要： A semiconductor memory unit includes first to Nth variable resistance elements each having different resistance values according to values stored therein, wherein N is a natural number equal to or greater than 2; a reference resistance element having a first reference resistance value; and first to Nth comparison units which correspond to the first to Nth variable resistance elements, respectively, and each of which determines whether a resistance value of the corresponding variable resistance element is greater or less than a second reference resistance value, wherein the first to Nth comparison units are commonly coupled to the reference resistance element.
摘要翻译：半导体存储单元包括根据存储在其中的值具有不同电阻值的第一至第N可变电阻元件，其中N是等于或大于2的自然数; 具有第一参考电阻值的参考电阻元件; 以及分别对应于第一至第N可变电阻元件的第一至第N比较单元，并且每个比较单元确定相应的可变电阻元件的电阻值是否大于或小于第二参考电阻值，其中第一至第N 比较单元通常耦合到参考电阻元件。

2. 发明授权

US09177641B2 Memory device 有权
标题翻译：内存设备
公开(公告)号：US09177641B2
公开(公告)日：2015-11-03
申请号：US14018306
申请日：2013-09-04
申请人： Masahiro Takahashi , Tsuneo Inaba , Dong Keun Kim , Ji Wang Lee
发明人： Masahiro Takahashi , Tsuneo Inaba , Dong Keun Kim , Ji Wang Lee
IPC分类号： G11C13/00 , G11C11/16
CPC分类号： G11C13/004 , G11C11/1673 , G11C2013/0054 , G11C2213/79
摘要： According to one embodiment, a memory device includes a memory cell, a sense amplifier, and a resistor. The sense amplifier includes a first input and a second input, outputs a signal in accordance with a difference between the first and second inputs, and is selectively coupled at a second input to the memory cell. The resistor is in a first path between the first input of the sense amplifier and a ground node.
摘要翻译：根据一个实施例，存储器件包括存储单元，读出放大器和电阻器。读出放大器包括第一输入和第二输入，根据第一和第二输入之间的差输出信号，并且在第二输入端选择性地耦合到存储单元。电阻器位于读出放大器的第一输入端和接地节点之间的第一路径中。

3. 发明申请

US20140286082A1 MEMORY DEVICE 有权
标题翻译：内存设备
公开(公告)号：US20140286082A1
公开(公告)日：2014-09-25
申请号：US14018306
申请日：2013-09-04
申请人： Masahiro TAKAHASHI , Tsuneo INABA , Dong Keun KIM , Ji Wang LEE
发明人： Masahiro TAKAHASHI , Tsuneo INABA , Dong Keun KIM , Ji Wang LEE
IPC分类号： G11C13/00
CPC分类号： G11C13/004 , G11C11/1673 , G11C2013/0054 , G11C2213/79
摘要： According to one embodiment, a memory device includes a memory cell, a sense amplifier, and a resistor. The sense amplifier includes a first input and a second input, outputs a signal in accordance with a difference between the first and second inputs, and is selectively coupled at a second input to the memory cell. The resistor is in a first path between the first input of the sense amplifier and a ground node.
摘要翻译：根据一个实施例，存储器件包括存储单元，读出放大器和电阻器。读出放大器包括第一输入和第二输入，根据第一和第二输入之间的差输出信号，并且在第二输入端选择性地耦合到存储单元。电阻器位于读出放大器的第一输入端和接地节点之间的第一路径中。

4. 发明授权

US08610458B2 Impedance control circuit and semiconductor device including the same 有权
标题翻译：阻抗控制电路和包括其的半导体器件
公开(公告)号：US08610458B2
公开(公告)日：2013-12-17
申请号：US13446527
申请日：2012-04-13
申请人： Ji-Wang Lee
发明人： Ji-Wang Lee
IPC分类号： H03K19/003 , H03L5/00
CPC分类号： H03K19/018571 , H03K19/0005 , H03K19/018585
摘要： An impedance control circuit includes a first impedance unit configured to terminate an impedance node using an impedance value that is determined by an impedance control code, a second impedance unit configured to terminate the impedance node using an impedance value that is determined by an impedance control voltage, a comparison circuit configured to compare a voltage level of the impedance node and a voltage level of a reference voltage, generate an up/down signal indicating whether the voltage at the impedance node is greater than the reference voltage, and generate the impedance control voltage that has a voltage level corresponding to a difference between the voltage at the impedance node and the reference voltage, and a counter unit configured to increase or decrease a value of the impedance control code in response to the up/down signal.
摘要翻译：阻抗控制电路包括：第一阻抗单元，被配置为使用由阻抗控制代码确定的阻抗值来终止阻抗节点;第二阻抗单元，被配置为使用由阻抗控制电压确定的阻抗值来终止阻抗节点比较电路，被配置为比较阻抗节点的电压电平和参考电压的电压电平，生成表示阻抗节点处的电压是否大于参考电压的上/下信号，并产生阻抗控制电压其具有对应于阻抗节点处的电压与参考电压之间的差的电压电平，以及配置为响应于上/下信号增加或减少阻抗控制代码的值的计数器单元。

5. 发明授权

US08373456B2 Domain crossing circuit of a semiconductor memory apparatus 有权
标题翻译：半导体存储装置的域交叉电路
公开(公告)号：US08373456B2
公开(公告)日：2013-02-12
申请号：US12486281
申请日：2009-06-17
申请人： Hae Rang Choi , Yong Ju Kim , Sung Woo Han , Hee Woong Song , Ic Su Oh , Hyung Soo Kim , Tae Jin Hwang , Ji Wang Lee , Jae Min Jang , Chang Kun Park
发明人： Hae Rang Choi , Yong Ju Kim , Sung Woo Han , Hee Woong Song , Ic Su Oh , Hyung Soo Kim , Tae Jin Hwang , Ji Wang Lee , Jae Min Jang , Chang Kun Park
IPC分类号： H03L7/00
CPC分类号： H04L7/0338 , G11C7/1078 , G11C7/1087 , G11C7/1093 , G11C7/22 , G11C7/222 , H04L7/0045
摘要： The domain crossing circuit of a semiconductor memory apparatus for improving a timing margin includes a sampler that provides a sampling internal signal generated by delaying an internal input signal by a predetermined time in response to a clock and an edge information signal that defines an output timing of the sampling internal signal and an output stage that allows the sampling internal signal to be synchronized with the clock in response to the edge information signal to be output as a final output signal.
摘要翻译：用于提高定时裕度的半导体存储装置的域交叉电路包括：采样器，其通过响应于时钟和内部输入信号产生的采样内部信号，边缘信息信号定义为输出定时采样内部信号和输出级，其允许采样内部信号与时钟同步，以响应于作为最终输出信号输出的边缘信息信号。

6. 发明授权

US08171189B2 Semiconductor apparatus 失效
标题翻译：半导体装置
公开(公告)号：US08171189B2
公开(公告)日：2012-05-01
申请号：US12648524
申请日：2009-12-29
申请人： Ji Wang Lee , Hee Woong Song , Tae Jin Hwang
发明人： Ji Wang Lee , Hee Woong Song , Tae Jin Hwang
IPC分类号： G06F3/00 , G06F5/00
CPC分类号： G06F13/4072
摘要： A semiconductor apparatus includes a clock input buffer, an asynchronous data input buffer, and a synchronous data input buffer. The clock input buffer is configured to buffer an external clocks in order to generate an internal clock. The asynchronous data input buffer is configured to buffer data input through a data pad and output the buffered data. The synchronous data input buffer is configured to be synchronous with the internal clock to buffer the buffered data. The semiconductor apparatus is arranged so that the length of a line for transferring the internal clock to the synchronous data input buffer and the length of a line for transferring the buffered data to the synchronous data input buffer are substantially equal to each other.
摘要翻译：半导体装置包括时钟输入缓冲器，异步数据输入缓冲器和同步数据输入缓冲器。时钟输入缓冲器配置为缓冲外部时钟以产生内部时钟。异步数据输入缓冲器被配置为缓冲通过数据焊盘输入的数据并输出缓冲的数据。同步数据输入缓冲器被配置为与内部时钟同步以缓冲缓冲的数据。半导体装置被布置成使得用于将内部时钟传送到同步数据输入缓冲器的线的长度和用于将缓冲数据传送到同步数据输入缓冲器的线的长度基本上彼此相等。

7. 发明授权

US08099620B2 Domain crossing circuit of a semiconductor memory apparatus 失效
标题翻译：半导体存储装置的域交叉电路
公开(公告)号：US08099620B2
公开(公告)日：2012-01-17
申请号：US12346675
申请日：2008-12-30
申请人： Hae Rang Choi , Yong Ju Kim , Sung Woo Han , Hee Woong Song , Ic Su Oh , Hyung Soo Kim , Tae Jin Hwang , Ji Wang Lee , Jae Min Jang , Chang Kun Park
发明人： Hae Rang Choi , Yong Ju Kim , Sung Woo Han , Hee Woong Song , Ic Su Oh , Hyung Soo Kim , Tae Jin Hwang , Ji Wang Lee , Jae Min Jang , Chang Kun Park
IPC分类号： G06F1/00 , G06F1/04 , G06F12/00 , H03K19/00 , H03L7/00 , G11C8/00
CPC分类号： G11C7/1051 , G06F1/12 , G11C7/1072 , G11C7/222
摘要： A domain crossing circuit of a semiconductor memory apparatus, the domain crossing circuit comprising first and second count signals generated at substantially a same clock period, and representing predetermined clock differences with reference to an internal clock signal with respect to same bit combination data, and a data processing unit configured to provide output data corresponding to input data based on the second count signal in response to the input data synchronized to an external clock signal.
摘要翻译：半导体存储器装置的域交叉电路，域交叉电路包括在基本上相同的时钟周期产生的第一和第二计数信号，并且相对于相同位组合数据参考内部时钟信号表示预定的时钟差，以及数据处理单元，被配置为响应于与外部时钟信号同步的输入数据，基于第二计数信号提供对应于输入数据的输出数据。

8. 发明授权

US08035431B2 Delay locked loop and delay locking method having burst tracking scheme 有权
标题翻译：具有脉冲串跟踪方案的延迟锁定环路和延迟锁定方法
公开(公告)号：US08035431B2
公开(公告)日：2011-10-11
申请号：US12494509
申请日：2009-06-30
申请人： Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
发明人： Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
IPC分类号： H03L7/06
CPC分类号： H03L7/0814 , H03L7/093
摘要： A Delay Locked Loop (DLL) includes a replica delay unit configured to delay an output clock to generate a feedback clock; a phase detector configured to measure a phase difference between the feedback clock and an input clock; a quantization unit configured to quantize the phase difference measured by the phase detector; and a delay unit configured to delay the input clock based on a quantization result from the quantization unit to generate the output clock.
摘要翻译：延迟锁定环（DLL）包括复制延迟单元，其被配置为延迟输出时钟以产生反馈时钟; 相位检测器，被配置为测量反馈时钟和输入时钟之间的相位差; 量化单元，被配置为量化由相位检测器测量的相位差; 以及延迟单元，被配置为基于来自量化单元的量化结果来延迟输入时钟，以产生输出时钟。

9. 发明授权

US08023356B2 Voltage level comparison circuit of semiconductor memory apparatus, voltage adjustment circuit using voltage level comparison circuit, and semiconductor memory apparatus using the same 失效
标题翻译：半导体存储装置的电压电平比较电路，使用电压电平比较电路的电压调整电路和使用其的半导体存储装置
公开(公告)号：US08023356B2
公开(公告)日：2011-09-20
申请号：US12336423
申请日：2008-12-16
申请人： Ic-Su Oh , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
发明人： Ic-Su Oh , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
IPC分类号： G11C5/14
CPC分类号： G11C5/147
摘要： A voltage adjustment circuit of a semiconductor memory apparatus includes a control voltage generating unit configured to distribute an external voltage for selectively outputting a plurality of distribution voltages as a control voltage in response to a control signal, the plurality of the distribution voltages each have different voltage levels, a comparing unit configured to include a voltage supply unit configured to control an external voltage supplied to a first node and a second node if a level of an output voltage is higher than a level of a reference voltage in response to a level of the control voltage, and a detection signal generating unit configured to drop potential levels of the first and second nodes according to the levels of the output voltage and the reference voltage, and to output the potential level of the second node as a detection signal, and a voltage generating unit configured to drive the external voltage according to a potential level of the detection signal and to output the external voltage as the output voltage.
摘要翻译：半导体存储装置的电压调整电路包括：控制电压生成部，其被配置为响应于控制信号分配用于选择性地输出多个分配电压的外部电压作为控制电压，所述多个分配电压各自具有不同的电压电平，比较单元，被配置为包括电压供应单元，其被配置为响应于所述电平的电平而控制提供给第一节点的外部电压和第二节点，如果输出电压的电平高于参考电压的电平以及检测信号生成单元，被配置为根据输出电压和参考电压的电平来降低第一和第二节点的电位电平，并输出第二节点的电位电平作为检测信号，以及电压产生单元，被配置为根据检测信号的电位来驱动外部电压并输出外部电压作为输出电压。

10. 发明授权

US07990785B2 Delay locked loop circuit of semiconductor device 有权
标题翻译：半导体器件的延迟锁定环路
公开(公告)号：US07990785B2
公开(公告)日：2011-08-02
申请号：US12262517
申请日：2008-10-31
申请人： Hee-Woong Song , Kun-Woo Park , Yong-Ju Kim , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee
发明人： Hee-Woong Song , Kun-Woo Park , Yong-Ju Kim , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee
IPC分类号： G11C7/00
CPC分类号： G11C29/02 , G11C7/22 , G11C7/222 , G11C29/023 , G11C29/028 , H03L7/0812 , H03L7/089 , H03L7/095
摘要： A semiconductor memory device includes a delay locked loop circuit that can control input/output timing of data according to a system clock of a high frequency. The semiconductor memory device includes a phase comparator configured to detect a phase difference between an internal clock and a reference clock to output a state signal having a pulse width corresponding to the detected phase difference, a phase adjuster configured to generate a digital code for determining a delay time corresponding to the state signal for locking a phase of the internal clock, a digital-to-analog converter configured to convert the digital code to an analog voltage, and a multiphase delay signal generator configured to delay the internal clock according to a bias voltage corresponding to the analog voltage to feed back the delayed internal clock as the internal clock and generate multiphase delay signals.
摘要翻译：半导体存储器件包括可以根据高频系统时钟控制数据的输入/输出定时的延迟锁定环电路。半导体存储装置包括：相位比较器，被配置为检测内部时钟和参考时钟之间的相位差，以输出具有与检测到的相位差相对应的脉冲宽度的状态信号;相位调整器，被配置为生成用于确定对应于用于锁定内部时钟的相位的状态信号的延迟时间，配置成将数字代码转换为模拟电压的数模转换器，以及被配置为根据偏置来延迟内部时钟的多相延迟信号发生器对应于模拟电压的电压反馈延迟的内部时钟作为内部时钟，并产生多相延迟信号。

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