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    • 41. 发明授权
    • Semiconductor device, electronic component, and electronic device
    • 半导体装置,电子部件和电子装置
    • US09461646B2
    • 2016-10-04
    • US15007350
    • 2016-01-27
    • Semiconductor Energy Laboratory Co., Ltd.
    • Munehiro KozumaTakayuki IkedaYoshiyuki KurokawaTakeshi AokiYuki Okamoto
    • H03K19/177H03K19/00H03K19/0948
    • H03K19/0013H03K19/0948H03K19/17728H03K19/1776
    • A semiconductor device suitable for low-voltage driving. The semiconductor device includes a first transistor, a second transistor, a power supply line, a circuit, and a memory circuit. The first transistor controls electrical continuity between the circuit and the power supply line. The memory circuit stores data for setting a gate potential of the first transistor. The second transistor controls electrical continuity between an output node of the memory circuit and a gate of the first transistor. The second transistor is a transistor with an ultralow off-state current, for example, an oxide semiconductor transistor. In a period for operating the circuit, a first potential is input to the power supply line and the second transistor is turned off. In a period for updating the gate potential of the first transistor, a second potential is input to the power supply line. The second potential is higher than the first potential.
    • 适用于低压驱动的半导体器件。 半导体器件包括第一晶体管,第二晶体管,电源线,电路和存储器电路。 第一个晶体管控制电路和电源线之间的电气连续性。 存储电路存储用于设置第一晶体管的栅极电位的数据。 第二晶体管控制存储电路的输出节点和第一晶体管的栅极之间的电连续性。 第二晶体管是具有超低截止电流的晶体管,例如氧化物半导体晶体管。 在用于操作电路的时段中,第一电位被输入到电源线并且第二晶体管被截止。 在用于更新第一晶体管的栅极电位的时段中,第二电位被输入到电源线。 第二个潜力高于第一个潜力。