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41. 发明授权

US08362505B2 Optical device and the forming method thereof 有权
标题翻译：光学装置及其形成方法
公开(公告)号：US08362505B2
公开(公告)日：2013-01-29
申请号：US12408795
申请日：2009-03-23
申请人： Tzong-Liang Tsai , Lin-Chieh Kao , Shu-Ying Yang
发明人： Tzong-Liang Tsai , Lin-Chieh Kao , Shu-Ying Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/46
摘要： An optical device is provided which includes a first electrode; a substrate disposed on the first electrode; a multi-layer structure disposed on the substrate, and the multi-layer structure consisted of a plurality of insulating layers with different refractive indices formed alternately; a first conductive semiconductor layer disposed on the substrate to cover the multi-layer structure; an active layer disposed on the first conductive semiconductor layer; a second conductive semiconductor layer disposed on the active layer; a transparent conductive layer disposed on the second conductive semiconductor layer; and a second electrode disposed on the transparent conductive layer, thereby, the multi-layer structure can increase the light reflective effect or anti-reflective effect within the optical device to improve the light emitting-efficiency.
摘要翻译：提供一种光学装置，其包括第一电极; 设置在所述第一电极上的基板; 设置在所述基板上的多层结构，所述多层结构由交替形成的具有不同折射率的多个绝缘层构成; 设置在所述基板上以覆盖所述多层结构的第一导电半导体层; 设置在所述第一导电半导体层上的有源层; 设置在所述有源层上的第二导电半导体层; 设置在所述第二导电半导体层上的透明导电层; 以及设置在透明导电层上的第二电极，由此，多层结构可以增加光学器件内的光反射效果或抗反射效果，以提高发光效率。

42. 发明授权

US08247837B2 Light-emitting diode with high lighting efficiency 有权
标题翻译：发光二极管具有高照明效率
公开(公告)号：US08247837B2
公开(公告)日：2012-08-21
申请号：US12421872
申请日：2009-04-10
申请人： Su-Hui Lin , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
发明人： Su-Hui Lin , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/42
摘要： The invention discloses a light-emitting diode. In an embodiment, the light-emitting diode includes a substrate, a first doping type semiconductor layer, a second doping type semiconductor layer, a light-emitting layer and plural laminated structures. The first doping type semiconductor layer, the light-emitting layer and the second doping type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the top surface of the second doping type semiconductor layer such that the top surface is partially exposed. Each laminated structure consists of plural transparent insulating layers which have their respective refractive indices. Additionally, each of the laminated structures is formed in a way of upwardly stacking the transparent insulating layers in sequence with the refractive indices of the transparent insulating layers decreasing gradually, so as to enhance the light-extraction efficiency and the lighting efficiency of the light-emitting diode.
摘要翻译：本发明公开了一种发光二极管。在一个实施例中，发光二极管包括基板，第一掺杂型半导体层，第二掺杂型半导体层，发光层和多个叠层结构。依次在基板上形成第一掺杂型半导体层，发光层和第二掺杂型半导体层。多个叠层结构形成在第二掺杂型半导体层的顶表面上，使得顶表面部分露出。每个层压结构由具有各自折射率的多个透明绝缘层组成。另外，各层叠结构体以与透明绝缘层的折射率逐渐降低的顺序向上堆积透明绝缘层的方式形成，从而提高发光体的光提取效率和照明效率，发光二极管。

43. 发明授权

US08174039B2 Light-emitting diode device with high luminescent efficiency 有权
标题翻译：发光二极管器件发光效率高
公开(公告)号：US08174039B2
公开(公告)日：2012-05-08
申请号：US12418079
申请日：2009-04-03
申请人： Lin-Chieh Kao , Shu-Ying Yang
发明人： Lin-Chieh Kao , Shu-Ying Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/08 , H01L33/382 , H01L33/44
摘要： The invention discloses a light-emitting diode including a substrate, a main stack structure, a plurality of secondary pillars, a transparent insulating material, a transparent conducting layer, a first electrode and a second electrode. The pillars are formed on the substrate and surrounding the main stack structure. The main stack structure and each of the pillars has a first conducting-type semiconductor layer, a luminescing layer, and a second conducting-type semiconductor layer formed on the substrate in sequence. The transparent insulating material fills the gaps between the pillars and is as high as the pillars. The transparent conducting layer is coated on the main stack, the pillars and the transparent insulating material. The first electrode is formed on the transparent conducting layer and second electrode is formed on the first conducting-type semiconductor layer.
摘要翻译：本发明公开了一种发光二极管，包括基板，主叠层结构，多个次柱，透明绝缘材料，透明导电层，第一电极和第二电极。支柱形成在基板上并围绕主堆叠结构。主堆叠结构和每个支柱具有依次形成在基板上的第一导电型半导体层，发光层和第二导电型半导体层。透明绝缘材料填充柱之间的间隙，并且与支柱一样高。透明导电层涂覆在主叠层，支柱和透明绝缘材料上。第一电极形成在透明导电层上，第二电极形成在第一导电型半导体层上。

44. 发明授权

US08129736B2 Light-emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08129736B2
公开(公告)日：2012-03-06
申请号：US12426542
申请日：2009-04-20
申请人： Lin-Chieh Kao , Shu-Ying Yang
发明人： Lin-Chieh Kao , Shu-Ying Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/44
摘要： The invention discloses a light-emitting diode which includes a substrate on which a first conducting-type semiconductor layer, an illuminating layer and a second conducting-type semiconductor layer are formed sequentially, a transparent insulating material, a first transparent conducting layer, and a second transparent conducting layer. The top surface of the first conducting-type semiconductor layer includes a first region and a second region surrounded by the first region. Plural pillar-like holes are formed at the first region and protrude into the first conducting-type semiconductor layer. The transparent insulating material fills up the holes. The first transparent conducting layer is formed on the second conducting-type semiconductor layer, and the second transparent conducting layer is formed on the top surface of the transparent insulating material and on the first region.
摘要翻译：本发明公开了一种发光二极管，其包括基板，其上依次形成有第一导电型半导体层，照明层和第二导电型半导体层，透明绝缘材料，第一透明导电层和第二透明导电层。第一导电型半导体层的顶表面包括由第一区域包围的第一区域和第二区域。在第一区域形成多个柱状的孔，并且突出到第一导电型半导体层中。透明绝缘材料填满孔。第一透明导电层形成在第二导电型半导体层上，第二透明导电层形成在透明绝缘材料的顶表面和第一区域上。

45. 发明授权

US08124989B2 Light optoelectronic device and forming method thereof 有权
标题翻译：光电子器件及其形成方法
公开(公告)号：US08124989B2
公开(公告)日：2012-02-28
申请号：US12061623
申请日：2008-04-02
申请人： Tzong-Liang Tsai
发明人： Tzong-Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L33/04 , H01L33/10 , H01L33/105 , H01L33/32
摘要： The present invention provides an optoelectronic device with an epi-stacked structure, which includes a substrate, a buffer layer that is formed on the substrate, in which the buffer layer includes a first nitrogen-containing compound layer, an II/V group compound layer is provided on the first nitrogen-containing compound layer, a second nitrogen-containing compound layer is provided on the II/V group compound layer, and a third nitrogen-containing compound layer is provided on the second nitrogen-containing compound layer, an epi-stacked structure with a multi-layer structure is formed on the buffer layer, which includes a first semiconductor conductive layer is formed on the buffer layer, an active layer is formed on the first semiconductor conductive layer, a multi-layer structure is formed between the first semiconductor conductive layer and the active layer, and a second semiconductor conductive layer is formed on the active layer.
摘要翻译：本发明提供具有外延叠层结构的光电器件，其包括衬底，形成在衬底上的缓冲层，其中缓冲层包括第一含氮化合物层，II / V族化合物层设置在第一含氮化合物层上，在II / V族化合物层上设置第二含氮化合物层，在第二含氮化合物层上设置第三含氮化合物层，在缓冲层上形成具有多层结构的叠层结构，在缓冲层上形成有第一半导体导电层，在第一半导体导电层上形成有源层，在第一半导体导电层之间形成多层结构，第一半导体导电层和有源层，以及在有源层上形成第二半导体导电层。

46. 发明授权

US08044422B2 Semiconductor light emitting devices with a substrate having a plurality of bumps 有权
标题翻译：具有基板的半导体发光器件具有多个凸块
公开(公告)号：US08044422B2
公开(公告)日：2011-10-25
申请号：US12652956
申请日：2010-01-06
申请人： Jing Jie Dai , Yen Chieh Huang , Shu Ying Yang
发明人： Jing Jie Dai , Yen Chieh Huang , Shu Ying Yang
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/22 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned on the upper surface, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. In one embodiment of the present disclosure, each of the bumps has a top plane substantially parallel to the upper surface, the first conductive type semiconductor layer has a plurality of protrusions each facing a portion of the substrate between the bumps, and the protrusions are spaced apart from the bumps.
摘要翻译：一种半导体发光器件，包括具有上表面的基板和位于上表面的多个凸块，位于基板上的第一导电型半导体层，位于第一导电型半导体层上的发光结构，以及位于发光结构上的第二导电型半导体层。在本公开的一个实施例中，每个凸起具有基本上平行于上表面的顶平面，第一导电类型半导体层具有多个突起，每个突起面向凸起之间的基板的一部分，并且突起间隔开除了颠簸。

47. 发明授权

US08013322B2 Light-emitting diode device with a double-layer contact structure and a fabrication method thereof 有权
标题翻译：具有双层接触结构的发光二极管器件及其制造方法
公开(公告)号：US08013322B2
公开(公告)日：2011-09-06
申请号：US12274239
申请日：2008-11-19
申请人： Ming-Huang Hong , Tzong-Liang Tsai
发明人： Ming-Huang Hong , Tzong-Liang Tsai
IPC分类号： H01L29/06
CPC分类号： H01L33/42 , H01L33/14 , H01L33/387
摘要： The present invention provides a light-emitting diode (LED) device and a fabrication method thereof. The LED device has a double-layered contact layer structure with a surface of one contact layer being patterned to increase ohmic contact area of the double-layered contact layer structure to lower an operation voltage of the LED device, and hence reducing power consumption.
摘要翻译：本发明提供一种发光二极管（LED）装置及其制造方法。 LED器件具有双层接触层结构，其中一个接触层的表面被图案化以增加双层接触层结构的欧姆接触面积，以降低LED器件的操作电压，从而降低功耗。

48. 发明授权

US07956373B2 Semiconductor light-emitting device with high light-extraction efficiency 有权
标题翻译：半导体发光器件具有较高的光提取效率
公开(公告)号：US07956373B2
公开(公告)日：2011-06-07
申请号：US12081595
申请日：2008-04-17
申请人： Wei-Kai Wang , Su-Hui Lin , Wen-Chung Shih
发明人： Wei-Kai Wang , Su-Hui Lin , Wen-Chung Shih
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22
摘要： The invention discloses a semiconductor light-emitting device and a fabricating method thereof. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, a top-most layer, and at least one electrode. The multi-layer structure is formed on the substrate and includes a light-emitting region. The top-most layer is formed on the multi-layer structure, and the lower part of the sidewall of the top-most layer exhibits a first surface morphology relative to a first pattern. In addition, the upper part of the sidewall of the top-most layer exhibits a second surface morphology relative to a second pattern. The first pattern is different from the second pattern. The at least one electrode is formed on the top-most layer. Therefore, the sidewall of the semiconductor light-emitting device according to the invention exhibits a surface morphology, which increases the light extraction area of the sidewall, and consequently enhances the light extraction efficiency of the semiconductor light-emitting device.
摘要翻译：本发明公开了一种半导体发光器件及其制造方法。根据本发明的半导体发光器件包括衬底，多层结构，最顶层和至少一个电极。多层结构形成在基板上并且包括发光区域。最顶层形成在多层结构上，最顶层的侧壁的下部表现出相对于第一图案的第一表面形态。此外，最顶层的侧壁的上部相对于第二图案显示出第二表面形态。第一种模式与第二种模式不同。至少一个电极形成在最上层。因此，根据本发明的半导体发光器件的侧壁呈现表面形态，这增加了侧壁的光提取面积，从而提高了半导体发光器件的光提取效率。

49. 发明申请

US20110121348A1 SEMICONDUCTOR LIGHT-EMITTING DEVICES 有权
标题翻译：半导体发光器件
公开(公告)号：US20110121348A1
公开(公告)日：2011-05-26
申请号：US12652977
申请日：2010-01-06
申请人： JING JIE DAI , YEN CHIEH HUANG , SHU YING YANG
发明人： JING JIE DAI , YEN CHIEH HUANG , SHU YING YANG
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned on the upper surface in a periodic manner, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The first conductive type semiconductor layer includes a plurality of protrusions each facing a portion of the substrate between the bumps, the protrusions are positioned in a ring manner at a peripheral region of the first conductive type semiconductor layer, and the protrusions are spaced apart from the bumps.
摘要翻译：半导体发光器件包括具有上表面和周期性地位于上表面上的多个凸起的衬底，位于衬底上的第一导电类型半导体层，位于第一导电类型上的发光结构半导体层和位于发光结构上的第二导电型半导体层。第一导电型半导体层包括多个突起，每个突起各自面对基板的凸起部分之间，突起以环形方式定位在第一导电类型半导体层的周边区域，并且突起与颠簸

50. 发明申请

US20100258824A1 ELECTRODE STRUCTURE AND LIGHT-EMITTING DEVICE USING THE SAME 有权
标题翻译：电极结构和使用其的发光装置
公开(公告)号：US20100258824A1
公开(公告)日：2010-10-14
申请号：US12652279
申请日：2010-01-05
申请人： TAI CHUN WANG , WEI CHIH WEN
发明人： TAI CHUN WANG , WEI CHIH WEN
IPC分类号： H01L33/00 , H01L29/41
CPC分类号： H01L33/62 , H01L27/153 , H01L33/20 , H01L33/38 , H01L2924/0002 , H01L2924/00
摘要： An electrode structure includes at least two first electrodes and at least two second electrodes configured to be electrically connected in parallel to a power supply. Each of the first electrodes includes at least one first pad and at least one first extending wire with one end connected to the first pad, and the at least two first electrodes are spaced apart from each other. Each of the second electrodes includes at least one second pad and at least one second extending wire with one end connected to the second pad, and the at least two second electrodes are spaced apart from each other.
摘要翻译：电极结构包括至少两个第一电极和被配置为与电源并联电连接的至少两个第二电极。每个第一电极包括至少一个第一焊盘和至少一个第一延伸焊丝，其一端连接到第一焊盘，并且所述至少两个第一电极彼此间隔开。每个第二电极包括至少一个第二垫和至少一个第二延伸线，其一端连接到第二垫，并且所述至少两个第二电极彼此间隔开。

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