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51. 发明授权

US4962477A Enhanced crossite random access memory element and a process for the fabrication thereof 失效
标题翻译：增强的交叉随机存取存储元件及其制造方法
公开(公告)号：US4962477A
公开(公告)日：1990-10-09
申请号：US505617
申请日：1983-06-20
申请人： Leonard J. Schwee
发明人： Leonard J. Schwee
IPC分类号： G11C19/08
CPC分类号： G11C19/08 , G11C19/0858
摘要： An enhanced random access memory element and a process for its fabrication,herein permalloy thin films are patterned, inter alia, into a plurality of geminous memory cells to form a matrix or array of juxtaposed sloped columns thereof is disclosed. Each of the geminous memory cells is configured into a unique pattern comprising twin sub-patterns joined in an opposite fashion, i.e. reversed and inversed, so as to share a common area of permalloy. Consequently, magnetic domain walls (Neel walls) are formed at opposite and adjacent apexes of the unique pattern parallel to the easy axis after a predetermined magnetic field is applied along the hard axis of the array of geminous memory cells and then reduced to zero. In this way, the magnetization is properly aligned for use of the array of geminous memory cells as an enhanced nonvolatile random access memory element. Subsequent magnetization of the proper amount at particular ones of the geminous memory cells will cause two crossties and two Bloch lines to form therein so as to couple to each other, crosstie to Bloch line, Bloch line to crosstie. This configuration provides a larger readout signal, a larger signal to noise ratio, and will operate at lower power levels for the same density of information than previous crosstie random access memory elements.
摘要翻译：增强的随机存取存储器元件及其制造方法，其中坡莫合金薄膜特别被图案化成多个双晶存储器单元以形成并置的倾斜柱的阵列或阵列。每个双层存储单元被配置成独特的图案，其包括以相反的方式连接的双子图案，即反向和反转，以便共享坡莫合金的公共区域。因此，在沿着双晶存储器单元阵列的硬轴施加预定磁场之后，磁畴壁（Néel壁）形成在与容易轴平行的独特图案的相对和相邻顶点处，然后减小到零。以这种方式，磁化被适当地对准，以使用作为增强的非易失性随机存取存储器元件的双重存储器单元的阵列。随后在特定的双子记忆单元中的适当量的磁化将导致在其中形成两个交叉点和两个Bloch线，以便彼此耦合，交叉到Bloch线，Bloch线交叉。该配置提供更大的读出信号，更大的信噪比，并且对于与先前的交叉随机存取存储器元件相同的信息密度将在较低功率水平下操作。

52. 发明授权

US4912673A Detection system for a magnetic bubble memory in hybrid technology 失效
标题翻译：混合技术中磁性气泡记忆检测系统
公开(公告)号：US4912673A
公开(公告)日：1990-03-27
申请号：US292301
申请日：1988-12-30
申请人： Jean-Marc Fedeli , Joel Magnin , Marie-Therese Delaye , Marc Rabarot
发明人： Jean-Marc Fedeli , Joel Magnin , Marie-Therese Delaye , Marc Rabarot
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0866 , G11C19/0858
摘要： Magnetic bubble memory in hybrid technology using rows of chevron patterns. The memory detection system has an active detection zone (4) constituted by rows of chevrons, in order to stretch into the form of a strip the bubbles from a propagation path (2), and a first detector (8); a bubble elimination zone (12) constituted by forcing back means (18) for stopping the advance of the bubbles and for forcing them outside the detection system; and a passive detection zone (6) located following the bubble elimination zone (12) and incorporating a second detector (9), to which no bubble must be exposed, in order to eliminate the unwanted signal due to the influence of a rotary magnetic field necessary for the propagation of the bubbles. According to the invention, elimination zone (12) is provided with at least one barrier (20) produced by ion implantation in order to block the passage of the bubbles from active zone (4) to passive zone (6). The barrier or barriers (20, 22, 26, 28, 30) can be constituted by a high energy implantation of H.sub.2.sup.+ ions.
摘要翻译：使用行人字形图案的混合技术中的磁性气泡记忆。存储器检测系统具有由行人字形构成的主动检测区域（4），以便从传播路径（2）和第一检测器（8）拉伸成条带形式的气泡。气泡消除区（12），其通过强制反向装置（18）构成，用于阻止气泡的前进并将其迫使在检测系统外部; 以及位于气泡消除区（12）之后并且包含没有气泡必须暴露的第二检测器（9）的被动检测区（6），以便消除由旋转磁场的影响引起的不需要的信号气泡传播所必需的。根据本发明，消除区域（12）设置有至少一个通过离子注入产生的阻挡层（20），以阻挡气泡从活性区域（4）到被动区域（6）的通过。阻挡层或障碍物（20,22,26,28,30）可以由H 2 +离子的高能量注入构成。

53. 发明授权

US4901278A Bloch-line memory element and ram memory 失效
标题翻译： Bloch行内存元素和ram内存
公开(公告)号：US4901278A
公开(公告)日：1990-02-13
申请号：US54977
申请日：1987-05-28
申请人： Leonard J. Schwee
发明人： Leonard J. Schwee
IPC分类号： G11C19/08
CPC分类号： G11C19/0858
摘要： The present invention relates to a Bloch-line memory element and a nonvolatile RAM memory using such a Bloch-line memory element. The Bloch-line memory element comprises a planar magnetic memory element having magnetic domains separated by a wall which contains a Bloch-line disposed within the individual memory element. Coincident write lines interact with the magnetic element for writing a Bloch-line to a predetermined area within the memory element. For sensing the presence or absence of a Bloch-line within the predetermined area, one write conductor and a sense line are used for determining the logic state of the particular memory element. A plurality of memory elements are disposed in an address matrix and can be selected for reading from or writing to the particular Bloch-line RAM memory element for determining or writing bits of words.
摘要翻译：本发明涉及使用这种Bloch行存储元件的Bloch行存储元件和非易失性RAM存储器。布洛赫线存储元件包括具有由壁分隔的磁畴的平面磁存储元件，该磁畴包含布置在各个存储元件内的布洛赫线。重合写入线与用于将Bloch线写入到存储元件内的预定区域的磁性元件相互作用。为了感测在预定区域内存在或不存在布洛赫线，使用一个写导体和感测线来确定特定存储元件的逻辑状态。多个存储器元件设置在地址矩阵中，并且可以被选择用于从特定的布洛赫线RAM存储器元件读取或写入以用于确定或写入字的位。

54. 发明授权

US4827218A Linear magnetoresistance-effect sensor with semiconductor and ferrimagnetic layers and its application in a magnetic-domain detector 失效
标题翻译：具有半导体和亚铁磁层的线性磁阻效应传感器及其在磁畴检测器中的应用
公开(公告)号：US4827218A
公开(公告)日：1989-05-02
申请号：US145720
申请日：1988-01-15
申请人： Paul L. Meunier , Ernst Huijer , Manijeh Razeghi , Jean C. Lehureau
发明人： Paul L. Meunier , Ernst Huijer , Manijeh Razeghi , Jean C. Lehureau
IPC分类号： G01R33/09 , G11B5/00 , G11B5/39 , G11B5/49 , G11C19/08 , H01L43/08 , G01R33/06 , G06K7/08 , H01L27/22 , H01L43/00
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3993 , G11B5/4946 , G11B5/4969 , G11B5/4976 , G11C19/0866 , H01L43/08 , G11B2005/0032
摘要： A magnetoresistance-effect sensor for use in a magnetic domain detector for reading data recorded on magnetic tapes or in magnetic bubble memories mainly consists of a layer of semiconductor material which carries a layer of ferrimagnetic material on one face and at least one pair of electrodes disposed along an axis OX on the other face, the layer of ferrimagnetic material being placed in proximity to the magnetic data carrier. A magnetic data item thus induces a magnetic field in the layer of semiconductor material in a direction OY perpendicular to the axis OX of the pair of electrodes.
摘要翻译：用于读取记录在磁带或磁性气泡存储器中的数据的磁畴检测器中使用的磁阻效应传感器主要由一层半导体材料构成，该半导体材料层在一个表面上承载一层铁磁材料，并且至少一对电极设置在沿着另一面上的轴线OX，铁磁材料层被放置在磁数据载体附近。因此，磁数据项在垂直于该对电极的轴线OX的方向OY上引起半导体材料层中的磁场。

55. 发明授权

US4773054A Magnetic bubble memory with a hybrid junction 失效
标题翻译：具有混合结的磁性气泡记忆
公开(公告)号：US4773054A
公开(公告)日：1988-09-20
申请号：US8181
申请日：1987-01-29
申请人： Marie-Therese Delaye , Jean-Marc Fedeli , Joel Magnin , Marc Rabarot
发明人： Marie-Therese Delaye , Jean-Marc Fedeli , Joel Magnin , Marc Rabarot
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0891
摘要： A bubble memory with a hybrid junction formed between a first propagation track defined by a boundary between an implanted area and a non-implanted area and a second propagation track defined by a sequence of deposited patterns. The overlap zone between the tracks has a surface substantially equal in size to the magnetic bubble. The boundary cleared by the magnetic bubble has a direction perpendicular to an easy magnetization axis of the magnetic material of the memory, and an implanted area is formed beneath one leg of the deposited pattern.
摘要翻译：在由注入区域和非植入区域之间的边界限定的第一传播路径和由沉积图案序列定义的第二传播轨道之间形成的具有混合结的气泡存储器。轨道之间的重叠区域具有与磁性气泡大致相等的表面。由磁性气泡清除的边界具有垂直于存储器的磁性材料的易磁化轴的方向，并且在沉积图案的一条腿下方形成注入区域。

56. 发明授权

US4754429A Cassette type magnetic bubble memory 失效
标题翻译：盒式磁记忆体
公开(公告)号：US4754429A
公开(公告)日：1988-06-28
申请号：US732295
申请日：1985-05-09
申请人： Kouei Kashiro , Toshiaki Sukeda , Satoru Imai , Sakan Takai , Harumi Maegawa
发明人： Kouei Kashiro , Toshiaki Sukeda , Satoru Imai , Sakan Takai , Harumi Maegawa
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/085
摘要： A cassette type magnetic bubble memory comprise a bubble memory device including a bubble memory chip and lead terminals; a connector having contacts for electrically connecting the bubble memory device to an outside unit; thin flexible printed substrates for electrically connecting the contacts of the connector to the lead terminals of the bubble memory device; and a cassette case for accommodating therein the bubble memory device, the connector, and the printed substrates. The cassette case has inner walls. Some parts of the inner walls are in contact with at least some parts of an outer face of the bubble memory device to retain the device in the cassette case so that the majority of the outer face of the device is spaced from the majority of the inner walls of the cassette case. The bubble memory device and the connector are arranged in displaced positions along a plane common to the longitudinal direction of insertion of the cassette case into a bubble memory control unit.
摘要翻译：磁带式磁气泡存储器包括：气泡存储装置，其包括气泡存储芯片和引线端子; 具有用于将气泡存储装置电连接到外部单元的触点的连接器; 薄的柔性印刷基板，用于将连接器的触点电连接到气泡存储装置的引线端子; 以及用于在其中容纳气泡存储装置，连接器和印刷基板的盒壳体。磁带盒具有内壁。内壁的一些部分与气泡存储装置的外表面的至少一些部分接触，以将装置保持在盒壳体中，使得装置的大部分外表面与内部的大部分间隔开磁带盒的墙壁。气泡存储装置和连接器沿着与盒壳体插入气泡存储器控制单元的纵向方向共同的平面布置在位移位置。

57. 发明授权

US4745578A Magnetic bubble memory device 失效
标题翻译：磁性气泡记忆装置
公开(公告)号：US4745578A
公开(公告)日：1988-05-17
申请号：US898517
申请日：1986-08-21
申请人： Teruaki Takeuchi , Naoki Kodama , Masatoshi Takeshita , Takashi Toyooka , Ryo Suzuki
发明人： Teruaki Takeuchi , Naoki Kodama , Masatoshi Takeshita , Takashi Toyooka , Ryo Suzuki
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0891
摘要： A magnetic bubble memory device comprises contiguous-disk ion-implanted magnetic bubble propagation tracks formed by implanting selectively ions in a magnetic layer which can hold magnetic bubbles. At least one of the disks which form the ion-implanted bubble tracks and each of which may have a circular or square shape, is configured to include a combination of arcs of circles having different curvatures or a combination of sides of squares having different sizes.
摘要翻译：磁性气泡存储装置包括通过将磁选择性地离子注入到能够保持磁性气泡的磁性层中而形成的连续盘离子注入的气泡传播轨迹。形成离子注入气泡轨道的圆盘中的至少一个可以具有圆形或正方形形状，被构造为包括具有不同曲率的圆弧或具有不同尺寸的正方形的组合的组合。

58. 发明授权

US4734883A Magnetic bubble memory purge and verification system 失效
标题翻译：磁性气泡记忆清除和验证系统
公开(公告)号：US4734883A
公开(公告)日：1988-03-29
申请号：US732780
申请日：1985-05-10
申请人： Bruce C. Perkin
发明人： Bruce C. Perkin
IPC分类号： G11C19/08
CPC分类号： G11C19/085 , G11C19/0858
摘要： An arrangement for purging a magnetic bubble memory and providing a visible purge verification utilizes the thermal compensation Z-axis coil for providing a purge field. A power supply, purge switch and current sensitive circuit interrupter are connected across the thermal compensation coil. When the switch is closed, a surge of relatively high current many times greater than that required for thermal compensation is applied to the coil. Accordingly, the bubbles in the memory will completely disappear. The circuit interrupter is used to halt the purge current once it exceeds the required purge value. This protects the thermal compensation winding and also provides a visual verification that a purge pulse has occurred.
摘要翻译：用于清洗磁性气泡存储器并提供可见清洗验证的布置利用热补偿Z轴线圈来提供净化场。电源，清扫开关和电流敏感电路断路器连接在热补偿线圈两端。当开关闭合时，向线圈施加比热补偿所需的电流多许多倍的相对高电流的浪涌。因此，存储器中的气泡将完全消失。电路断路器一旦超过所需的清除值，就用于停止清洗电流。这保护了热补偿绕组，并且还提供了发生吹扫脉冲的目视验证。

59. 发明授权

US4711694A Process for producing a layer having a high magnetic anisotropy in a ferrimagnetic garnet 失效
标题翻译：在铁磁石榴石中制备具有高磁各向异性的层的方法
公开(公告)号：US4711694A
公开(公告)日：1987-12-08
申请号：US792202
申请日：1985-10-28
申请人： Thierry Capra , Philippe Gerard
发明人： Thierry Capra , Philippe Gerard
IPC分类号： G11C11/14 , C23C14/48 , C30B29/28 , C30B31/22 , H01F41/14 , H01F41/18 , H01F41/22 , H01F41/28 , C30B1/02 , B05D3/06 , C30B19/00 , G11C19/08
CPC分类号： H01F41/186 , H01F41/14 , H01F41/22 , H01F41/28 , Y10S117/917
摘要： Process for producing a ferrimagnetic garnet layer having a high magnetic anisotropy on an amagnetic substrate, wherein it comprises the stages of forming at least one ferrimagnetic garnet layer by epitaxy from the amagnetic substrate, high dose ion implantation in the ferrimagnetic garnet layer in order to produce defects therein and heating the entity in the presence of a reducing agent to a temperature between 250.degree. and 450.degree. C.Application to the production of bubble stores with non-implanted propagation patterns.
摘要翻译：用于制造在磁性基材上具有高磁各向异性的亚铁磁性石榴石层的方法，其中包括通过从非磁性基质外延形成至少一个亚铁磁性石榴石层的阶段，在亚铁磁石榴石层中进行高剂量离子注入以产生缺陷，并在还原剂存在下加热该实体至250℃至450℃的温度。应用于具有非注入传播模式的气泡存储的生产。

60. 发明授权

US4692899A Propagational control for Vertical Bloch Line memories 失效
标题翻译：垂直布洛克线记忆的传播控制
公开(公告)号：US4692899A
公开(公告)日：1987-09-08
申请号：US808200
申请日：1985-12-12
申请人： David S. Lo , Stanley J. Lins
发明人： David S. Lo , Stanley J. Lins
IPC分类号： G11C19/08
CPC分类号： G11C19/0841
摘要： Stabilization of the propagation of storage bits around the storage loops of a Vertical Bloch Line (VBL) memory is obtained by the vapor-deposition of a nickel-iron film over the VBL structure. The film has a composition range of 65-90% nickel and a thickness of 1,000 to 10,000 Angstroms, and is deposited in a vacuum of 10.sup.-4 to 10.sup.-6 Torr to provide parallel, periodic, magnetic stripe domains, and thus potential well domains, that have a periodicity in the range of 0.1 to 1 micron. The stripe domains are oriented perpendicular to the direction of data propagation and form potential wells along the elongated direction of the storage loops.
摘要翻译：通过在VBL结构上蒸镀镍铁膜，可以获得垂直布洛赫线（VBL）存储器的存储环周围的存储位传播的稳定性。该膜具有65-90％镍的组成范围和1,000至10,000埃的厚度，并且在10-4至10-6托的真空中沉积以提供平行的周期性磁条域，因此潜在的良好其周期性在0.1至1微米的范围内。条带域垂直于数据传播的方向定向，沿着存储环路的细长方向形成势阱。

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