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1. 发明申请

US20190048488A1 SOLUTION DEPOSITION METHOD FOR FORMING METAL OXIDE OR METAL HYDROXIDE LAYER 审中-公开
公开(公告)号：US20190048488A1
公开(公告)日：2019-02-14
申请号：US16164795
申请日：2018-10-19
申请人： Seoul Semiconductor Co., Ltd.
发明人： Jacob J. Richardson , Evan C. O'Hara , Daniel Estrada
IPC分类号： C30B7/04 , H01L21/02 , C30B7/00 , C25D7/12 , C30B29/16 , C30B19/00 , C23C18/16 , C23C18/12 , C30B29/10
CPC分类号： C30B7/04 , C23C18/1216 , C23C18/1245 , C23C18/125 , C23C18/1283 , C23C18/1651 , C25D7/123 , C30B7/00 , C30B19/00 , C30B29/10 , C30B29/16 , H01L21/02175 , H01L21/02282 , H01L21/02293 , H01L21/02304 , H01L21/02307
摘要： A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.

2. 发明申请

US20160284880A1 ADDITIVE FOR PREPARING SUEDE ON MONOCRYSTALLINE SILICON CHIP AND USE METHOD THEREOF 有权
标题翻译：用于制备单晶硅芯片的添加剂及其使用方法
公开(公告)号：US20160284880A1
公开(公告)日：2016-09-29
申请号：US14376499
申请日：2013-12-17
申请人： CHANGZHOU SHICHUANG ENERGY TECHNOLOGY CO., LTD.
发明人： Liming FU , Peiliang CHEN
IPC分类号： H01L31/0236 , C30B29/54 , C30B19/00 , C30B19/12
CPC分类号： H01L31/0236 , C30B19/00 , C30B19/12 , C30B29/06 , C30B29/54 , C30B33/10 , Y02E10/50
摘要： The invention provides an additive for preparing suede on a monocrystalline silicon chip, which comprises: polyethylene glycol, sodium benzoate, citric acid, hydrolytic polymaleic anhydride, sodium acetate and water. The invention also provides a suede preparation liquid for preparing suede on a monocrystalline silicon chip, which contains the foregoing additive for preparing suede on a monocrystalline silicon chip and an aqueous alkali in a mass ratio of 0.2-5:100, wherein the aqueous alkali is the aqueous solution of an inorganic or organic alkali. The invention also provides a method for preparing suede on a monocrystalline silicon chip, by using which suede can be prepared on the surface of a monocrystalline silicon chip with the foregoing suede preparation liquid.
摘要翻译：本发明提供了一种用于在单晶硅芯片上制备麂皮的添加剂，其包括：聚乙二醇，苯甲酸钠，柠檬酸，水解聚马来酸酐，乙酸钠和水。本发明还提供了一种用于在单晶硅芯片上制备麂皮的麂皮制备液，其含有上述用于在单晶硅芯片上制备麂皮的添加剂和质量比为0.2-5:100的碱水溶液，其中碱水溶液为无机或有机碱的水溶液。本发明还提供了在单晶硅芯片上制备绒面革的方法，通过使用在上述绒面革制备液体的单晶硅芯片的表面上可以制备麂皮绒。

3. 发明授权

US08945302B2 Method for crystal growth of a metal-nonmetal compound using a metallophobic-metallophilic surfactant and a thin metal wetting layer 有权
标题翻译：使用金属疏水 - 金属亲水性表面活性剂和金属润湿层的金属 - 非金属化合物的晶体生长方法
公开(公告)号：US08945302B2
公开(公告)日：2015-02-03
申请号：US14002820
申请日：2012-03-04
申请人： Moshe Einav
发明人： Moshe Einav
IPC分类号： C30B19/04 , C30B19/00 , C30B9/00 , C30B23/00 , C30B25/00 , C30B29/40 , C30B19/06 , C30B19/10 , C30B25/16 , C30B7/00 , C30B23/02 , C30B25/02
CPC分类号： C30B19/00 , C30B7/005 , C30B9/00 , C30B19/068 , C30B19/10 , C30B23/00 , C30B23/002 , C30B23/02 , C30B25/00 , C30B25/02 , C30B25/16 , C30B29/40
摘要： Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed crystal below a minimal temperature required for dissolving MN molecules in the wetting layer and above a melting point of the first metal, each one of the MN molecules being formed from an atom of a second metal and an atom of a first nonmetal, introducing the MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of the wetting layer between the MN surfactant monolayer and the surface of the seed crystal, and regulating a thickness of the wetting layer, thereby growing an epitaxial layer of the MN compound on the seed crystal.
摘要翻译：从金属 - 非金属（MN）化合物的表面活性剂晶体生长的方法，包括提供晶种的步骤，将第一金属的原子引入晶种，从而在种子的表面上形成薄的液体金属润湿层将晶种的温度设定在将MN分子溶解在润湿层中并高于第一金属的熔点所需的最小温度以下，每个MN分子由第二金属和原子的原子形成的第一非金属，引入形成MN表面活性剂单层的MN分子，从而促进在MN表面活性剂单层和晶种表面之间形成润湿层，并调节润湿层的厚度，从而生长外延晶种上的MN化合物的层。

4. 发明授权

US08815011B2 Magnetic garnet single crystal and optical element using same as well as method of producing single crystal 有权
标题翻译：磁石榴石单晶和使用相同的光学元件以及单晶的制造方法
公开(公告)号：US08815011B2
公开(公告)日：2014-08-26
申请号：US12806000
申请日：2010-08-27
申请人： Atsushi Ohido
发明人： Atsushi Ohido
IPC分类号： C30B9/12 , C30B29/28 , C30B19/00 , G02F1/00 , G02F1/09
CPC分类号： G02F1/0036 , C30B19/00 , C30B19/02 , C30B19/04 , C30B29/28 , G02F1/09
摘要： The present invention relates to a magnetic garnet single crystal prepared by the liquid phase epitaxial (LPE) process and an optical element using the same as well as a method of producing the single crystal, for the purpose of providing a magnetic garnet single crystal at a reduced Pb content and an optical element using the same, as well as a method of producing the single crystal. The magnetic garnet single crystal is grown by the liquid phase epitaxial process and is represented by the chemical formula BixNayPbzM13-x-y-zFe5-wM2wO12 (M1 is at least one element selected from Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and M2 is at least one element selected from Ga, Al, In, Ti, Ge, Si and Pt, provided that 0.5
摘要翻译：本发明涉及通过液相外延（LPE）工艺制备的石榴石单晶和使用其的光学元件以及制备单晶的方法，目的是在降低的Pb含量和使用其的光学元件，以及制造单晶的方法。磁性石榴石单晶通过液相外延工艺生长，并由化学式BixNayPbzM13-xy-zFe5-wM2wO12表示（M1为选自Y，Sm，Eu，Gd，Tb，Dy，Ho， Er，Tm，Yb和Lu; M2是选自Ga，Al，In，Ti，Ge，Si和Pt中的至少一种元素，条件是0.5

5. 发明申请

US20140113232A1 SELF-ASSEMBLABLE POLYMER AND METHODS FOR USE IN LITHOGRAPHY 有权
标题翻译：自组装聚合物及其在LITHOGRAPHY中的使用方法
公开(公告)号：US20140113232A1
公开(公告)日：2014-04-24
申请号：US14123943
申请日：2012-06-07
申请人： Aurelie Marie Andree Brizard , Sander Frederik Wuister , Roel Koole , Emiel Peeters
发明人： Aurelie Marie Andree Brizard , Sander Frederik Wuister , Roel Koole , Emiel Peeters
IPC分类号： G03F7/004 , C30B19/00 , G03F7/00
CPC分类号： G03F7/004 , B82Y10/00 , B82Y40/00 , C30B19/00 , G03F7/0002
摘要： A block copolymer, adapted to self-assemble to form an ordered pattern on a substrate, has first and second blocks with a terminal moiety covalently bonded to the end of the first block. The molecular weight of the terminal moiety is 20% or less than that of the block copolymer and the terminal moiety has a low chemical affinity for the first block. The terminal moiety can assist the accurate positional placement of the domains of the ordered array and lead to improved critical dimension uniformity and/or reduced line edge roughness. The polymer may be useful in combination with a graphoepitaxy template, where the terminal moiety is chosen to associate with a sidewall of the template. This may reduce undesired aggregation of polymer domains at a sidewall and/or assist in domain placement accuracy.
摘要翻译：适于自组装以在基底上形成有序图案的嵌段共聚物具有第一和第二嵌段，其末端部分共价键合到第一嵌段的末端。末端部分的分子量为嵌段共聚物的分子量的20％以下，末端部分对第一嵌段具有低的化学亲和力。末端部分可以帮助有序阵列的域的精确位置放置并且导致改进的临界尺寸均匀性和/或减少的线边缘粗糙度。所述聚合物可以与骨架外延模板组合使用，其中末端部分被选择为与模板的侧壁缔合。这可以减少侧壁处的聚合物域的不希望的聚集和/或有助于域放置精度。

6. 发明授权

US08623137B1 Method and device for slicing a shaped silicon ingot using layer transfer 有权
标题翻译：使用层转移来切割成型硅锭的方法和装置
公开(公告)号：US08623137B1
公开(公告)日：2014-01-07
申请号：US12384926
申请日：2009-04-10
申请人： Francois J. Henley
发明人： Francois J. Henley
IPC分类号： C30B19/00
CPC分类号： C30B29/06 , B28D5/045 , C01B33/02 , C30B33/00 , C30B33/06 , H01L21/0201 , H01L21/02027 , H01L31/1804
摘要： A method for slicing a shaped silicon ingot includes providing a single crystal silicon boule characterized by a cropped structure including a first end-face, a second end-face, and a length along an axis in an crystallographic direction substantially vertically extending from the first end-face to the second end-face. The method further includes cutting the single crystal silicon boule substantially through an {110} crystallographic plane in parallel to the axis to separate the single crystal silicon boule into a first portion with a first surface and a second portion with a second surface. Additionally, the method includes exposing either the first surface of the first portion or the second surface of the second portion and performing a layer transfer process to form a single crystal silicon sheet from either the first surface of the first portion or from the second surface of the second portion.
摘要翻译：用于切割成形硅锭的方法包括提供单晶硅棒，其特征在于包括第一端面，第二端面和沿着沿着轴线的长度的裁剪结构，该晶体方向基本垂直地从第二个端面的第一个端面。该方法还包括基本上通过平行于轴线的{110}晶面平面切割单晶硅棒，以将单晶硅棒分离成具有第一表面的第一部分和具有第二表面的第二部分。此外，该方法包括将第一部分的第一表面或第二部分的第二表面暴露，并且执行层转移过程以从第一部分的第一表面或第一部分的第二表面形成单晶硅片第二部分。

7. 发明申请

US20130344390A1 SYNTHESIS AND APPLICATIONS OF GRAPHENE BASED NANOMATERIALS 有权
标题翻译：基于石墨的纳米材料的合成与应用
公开(公告)号：US20130344390A1
公开(公告)日：2013-12-26
申请号：US13916033
申请日：2013-06-12
申请人： UWM Research Foundation, Inc.
发明人： Junhong Chen , Marija Gajdardziska-Josifovska , Carol Hirschmugl , Eric Mattson , Haihui Pu , Michael Weinert
IPC分类号： H01M10/0525 , G01N27/00 , H01M4/583 , C01B31/04 , C30B19/00
CPC分类号： H01M10/0525 , B82Y30/00 , B82Y40/00 , C01B32/23 , C30B7/00 , C30B29/02 , C30B29/60 , G01N27/127 , H01M4/583 , Y10S977/734 , Y10S977/892 , Y10S977/932 , Y10S977/948 , Y10S977/957
摘要： A composition of graphene-based nanomaterials and a method of preparing the composition are provided. A carbon-based precursor is dissolved in water to form a precursor suspension. The precursor suspension is placed onto a substrate, thereby forming a precursor assembly. The precursor assembly is annealed, thereby forming the graphene-based nanomaterials. The graphene-based nanomaterials are crystallographically ordered at least in part and configured to form a plurality of diffraction rings when probed by an incident electron beam. In one aspect, the graphene-based nanomaterials are semiconducting. In one aspect, a method of engineering an energy bandgap of graphene monoxide generally includes providing at least one atomic layer of graphene monoxide having a first energy bandgap, and applying a substantially planar strain is applied to the graphene monoxide, thereby tuning the first energy band gap to a second energy bandgap.
摘要翻译：提供了基于石墨烯的纳米材料的组合物和制备该组合物的方法。将碳基前体溶于水中以形成前体悬浮液。将前体悬浮液置于基材上，从而形成前体组合物。将前体组件退火，从而形成基于石墨烯的纳米材料。基于石墨烯的纳米材料至少部分地被晶体学排列，并且被构造成当被入射电子束探测时形成多个衍射环。在一个方面，基于石墨烯的纳米材料是半导体的。一方面，一种制备石墨烯一氧化碳的能带隙的方法通常包括提供具有第一能带隙的至少一个具有一氧化碳原子层的原子层，并且施加基本上平面的应变施加到一氧化碳上，由此调节第一能带与第二能量带隙的差距。

8. 发明授权

US08574362B2 Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot 有权
标题翻译：用于制造超低缺陷半导体单晶锭的方法和装置
公开(公告)号：US08574362B2
公开(公告)日：2013-11-05
申请号：US12244283
申请日：2008-10-02
申请人： Young-Ho Hong , Hyon-Jong Cho , Sung-Young Lee , Seung-Ho Shin , Hong-Woo Lee
发明人： Young-Ho Hong , Hyon-Jong Cho , Sung-Young Lee , Seung-Ho Shin , Hong-Woo Lee
IPC分类号： C30B11/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , C30B19/00 , C30B17/00 , C30B21/02 , C30B28/06
CPC分类号： C30B15/14 , C30B15/203 , C30B15/206 , C30B29/06
摘要： The present invention relates to a method for manufacturing an ultra low defect semiconductor single crystalline ingot, which uses a Czochralski process for growing a semiconductor single crystalline ingot through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and slowly pulling up the seed while rotating the seed, wherein a defect-free margin is controlled by increasing or decreasing a heat space on a surface of the semiconductor melt according to change in length of the single crystalline ingot as progress of the single crystalline ingot growth process.
摘要翻译：本发明涉及一种用于制造超低缺陷半导体单晶锭的方法，该方法使用Czochralski工艺，通过将种子浸入容纳在石英坩埚中的半导体熔体中，通过固 - 液界面生长半导体单晶锭;以及在旋转种子的同时慢慢拉起种子，其中随着单晶锭生长的进展，根据单晶锭的长度变化增加或减少半导体熔体的表面上的热空间来控制无缺陷边缘处理。

9. 发明申请

US20130255566A1 METHOD FOR MAKING EPITAXIAL STRUCTURE 有权
公开(公告)号：US20130255566A1
公开(公告)日：2013-10-03
申请号：US13593607
申请日：2012-08-24
申请人： YANG WEI , SHOU-SHAN FAN
发明人： YANG WEI , SHOU-SHAN FAN
IPC分类号： C30B19/00 , C30B25/04 , C30B23/04
CPC分类号： H01L21/0237 , C30B19/00 , C30B23/04 , C30B25/04 , C30B25/183 , C30B29/40 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/02521 , H01L21/0254 , H01L21/02642 , H01L21/02647
摘要： A method for making an epitaxial structure includes the following steps. A substrate having an epitaxial growth surface is provided. A buffer layer is formed on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. A first epitaxial layer is epitaxially grown on the buffer layer. The substrate and the buffer layer are removed to expose a second epitaxial growth surface. A second epitaxial layer is epitaxially grown on the second epitaxial growth surface.

10. 发明申请

US20120264615A1 CHEMICAL SOLUTION SEED LAYER FOR RABITS TAPES 有权
标题翻译：化学解决方案用于RABITS TAPES的种子层
公开(公告)号：US20120264615A1
公开(公告)日：2012-10-18
申请号：US13088182
申请日：2011-04-15
申请人： Amit Goyal , Mariappan Parans Paranthaman , Sung Hun Wee
发明人： Amit Goyal , Mariappan Parans Paranthaman , Sung Hun Wee
IPC分类号： H01L39/24 , C30B19/00
CPC分类号： H01B12/00 , C30B5/00 , C30B29/22 , C30B29/225 , H01L39/126 , H01L39/24 , H01L39/2425 , H01L39/2461
摘要： A method for making a superconducting article includes the steps of providing a biaxially textured substrate. A seed layer is then deposited. The seed layer includes a double perovskite of the formula A2B′B″O6, where A is rare earth or alkaline earth metal and B′ and B″ are different rare earth or transition metal cations. A superconductor layer is grown epitaxially such that the superconductor layer is supported by the seed layer.
摘要翻译：制造超导制品的方法包括提供双轴织构化基底的步骤。然后沉积种子层。种子层包括式A2B'B“O6的双钙钛矿，其中A是稀土或碱土金属，B'和B”是不同的稀土或过渡金属阳离子。外延生长超导体层，使得超导体层由种子层支撑。

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