会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 51. 发明授权
    • Reconditioning equalizer filter using convolution
    • 使用卷积修复均衡器滤波器
    • US07729419B1
    • 2010-06-01
    • US11603725
    • 2006-11-24
    • Kiomars Anvari
    • Kiomars Anvari
    • H03H7/30H04L27/08H03F3/66H03F1/26H03F1/00H04B1/04
    • H04L25/03019H04L25/03057
    • A technique for a reconditioning equalizer filter using convolution is described. The input to a transmitter chain is modified by a reconditioning equalizer filter using convolution prior to being applied to the transmitter. The reconditioning equalizer filter modifies and smoothen the amplitude of the main baseband signal. The modified and smoothen main baseband signal has its peaks reduced which results to lower Crest Factor. The input to the reconditioning equalizer filter using convolution could be a baseband, an intermediate frequency (IF) or radio frequency (RF) signal. When the signal is an IF or RF signal it needs to be down converted to baseband before applied to reconditioning equalizer filter using convolution.
    • 描述了使用卷积修复均衡器滤波器的技术。 通过在施加到发射机之前使用卷积的修复均衡器滤波器来修改发射机链的输入。 修复均衡器滤波器对主基带信号的幅度进行修正和平滑处理。 修改和平滑的主基带信号的峰值降低,导致波峰因数降低。 使用卷积的修复均衡器滤波器的输入可以是基带,中频(IF)或射频(RF)信号。 当信号是IF或RF信号时,需要将其转换为基带,然后才能使用卷积来重新调整均衡滤波器。
    • 53. 发明申请
    • METHOD AND SYSTEM FOR FLIP-CHIP RF FRONT END WITH A SWITCHABLE POWER AMPLIFIER
    • 具有可切换功率放大器的片状RF前端的方法和系统
    • US20090275295A1
    • 2009-11-05
    • US12112252
    • 2008-04-30
    • Razieh Roufoogaran
    • Razieh Roufoogaran
    • H03F1/00
    • H04B1/04H03F1/02H03F3/24H04B2001/0416H04B2001/045
    • Methods and systems for a flip-chip RF front end with switchable power amplifier. Aspects of one method may include controlling at least one MEMS switch to allow an on-chip PA and/or an off-chip PA to amplify RF signals for transmission. The MEMS switch may be part of a device package that may be mounted above the flip-chip bonded integrated circuit (IC). Accordingly, various embodiments of the invention may enable controlling of switches to amplify the RF signals via the on-chip RF PA, and the off-chip PA may be bypassed if there is an off-chip RF PA. Various embodiments of the invention may enable controlling the switches to amplify the RF signals via an off-chip RF PA and bypassing an on-chip RF PA. Various embodiments of the invention may also enable controlling the switches to amplify the RF signals via an off-chip RF PA and an on-chip RF PA.
    • 具有可切换功率放大器的倒装RF前端的方法和系统。 一种方法的方面可以包括控制至少一个MEMS开关以允许片上PA和/或片外PA放大RF信号进行传输。 MEMS开关可以是可以安装在倒装芯片接合集成电路(IC)上方的器件封装的一部分。 因此,本发明的各种实施例可以使得能够控制开关以经由片上RF PA放大RF信号,并且如果存在片外RF PA,则片外PA可以被旁路。 本发明的各种实施例可以使控制开关能够经由片外RF PA放大RF信号并绕过片上RF PA。 本发明的各种实施例还可以使控制开关能够经由片外RF PA和片上RF PA放大RF信号。
    • 54. 发明申请
    • Bypass Device for Microwave Amplifier Unit
    • 微波放大器单元旁路装置
    • US20090256633A1
    • 2009-10-15
    • US12084445
    • 2006-10-30
    • Amir Emdadi
    • Amir Emdadi
    • H03F1/00
    • H03G1/0088H03F1/42H03F1/52H03F3/602H03F3/72H03F2200/192H03F2200/198H03F2200/204H03F2200/294H03F2200/451H03F2200/543H03F2203/7239
    • The invention relates to a bypass device for a microwave amplifier unit, the microwave amplifier unit (1) comprising at least one low noise amplifier (LNA) and amplifying communication signals in at least one microwave frequency band above 500 MHz, the bypass device extending in parallel to said microwave amplifier unit (1), both extending between an input port (3) and an output port (4), in which amplifier unit (1) switching elements (9,10,16,21) for activating said bypass segment (2) in a bypass mode of the device in case said amplifier unit (1) becomes inoperable and for effectively blocking the bypass segment (2) in an active mode of the device are arranged, said bypass segment comprising a series of bypass segment sections (14,19,17) having at least one junction point connected to an associated one of said switching elements (16,21), where each of said bypass segment sections (14:19:17) comprises at least two coupled transmission lines (31,32;31,33,32;31,34,32:51,52;51,53,52:41,42;41,43,42;41,44,42), where the coupled transmission lines form sets (31,32,51,52,42,41;31,33,32,51,52,42,41;31,34,32,51,53,52,42,44,41) of transmission lines, where only one of the sets is in use at a time, and where each set of coupled transmission lines optimizes the bypass segment (2) to different operating frequencies, whereby the bypass segment is able to operate properly in the bypass mode at more than one frequency.
    • 本发明涉及一种用于微波放大器单元的旁路装置,所述微波放大器单元(1)包括至少一个低噪声放大器(LNA),并且在500MHz以上的至少一个微波频带内放大通信信号,所述旁路装置延伸在 平行于所述微波放大器单元(1),两者都在输入端口(3)和输出端口(4)之间延伸,其中放大器单元(1)用于激活旁路段(9,10,16,21) (2)在装置的旁路模式中,在所述放大器单元(1)变得不可操作并且为了有效地阻挡在所述装置的主动模式中的所述旁路段(2)的情况下,所述旁路段包括一系列旁路段段 (14,19,17),其具有连接到所述开关元件(16,21)中的相关联的一个的至少一个连接点,其中每个所述旁路段段(14:19:17)包括至少两个耦合的传输线 31,32; 31,33,32; 31,34,32:51,52; 51,53,52:41,42 ; 41,43,42; 41,44,42),其中所述耦合传输线形成集合(31,32,51,52,42,41; 31,33,32,51,52,42,41; 31,33,42; 34,32,51,53,52,42,44,41),其中一组中仅一个使用一次,并且其中每组耦合传输线优化旁路段(2)到不同的 工作频率,从而旁路段能够以多于一个频率在旁路模式下正常工作。
    • 60. 发明申请
    • Abnormality detection circuit
    • 异常检测电路
    • US20080048732A1
    • 2008-02-28
    • US11880506
    • 2007-07-23
    • Takashi Oki
    • Takashi Oki
    • H02H1/00H03F1/00H03F3/217H03K5/19
    • G01R31/40G01R19/16547H03F1/52H03F3/217
    • An abnormality detection circuit monitors a power supply voltage and, when the power supply voltage drops, outputs an abnormality detection signal of a predetermined level. The source of a detection transistor as a P-channel MOSFET is connected to a power supply line to which a power supply voltage to be monitored is applied. A detection resistor as an impedance element is provided between the drain of the detection transistor and a ground terminal. A capacitor is provided between the gate of the detection transistor and the ground terminal. A charging path is provided between the gate of the detection transistor and the power supply line. The abnormality detection circuit outputs a drain voltage of the detection transistor as an abnormality detection signal.
    • 异常检测电路监视电源电压,当电源电压下降时,输出预定电平的异常检测信号。 作为P沟道MOSFET的检测晶体管的源极连接到施加要监视的电源电压的电源线。 作为阻抗元件的检测电阻器设置在检测晶体管的漏极和接地端子之间。 在检测晶体管的栅极和接地端子之间提供电容器。 在检测晶体管的栅极和电源线之间设置充电路径。 异常检测电路将检测晶体管的漏极电压作为异常检测信号输出。