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    • 65. 发明授权
    • Organic light emitting diode touch display panel
    • 有机发光二极管触摸显示面板
    • US08901549B2
    • 2014-12-02
    • US13932017
    • 2013-07-01
    • HannStar Display Corp.
    • Chien-Hsiang HuangKun-Hua TsaiJun-Shih ChungChun-Hsi Chen
    • H01L29/08H01L35/24H01L51/00H01L27/32G06F3/041
    • H01L27/323G06F3/041G06F3/0412
    • The present invention provides an organic light emitting diode touch display panel including a substrate, a plurality of first electrodes and a plurality of second electrodes disposed on the substrate, a plurality of light emitting layers, a plurality of dielectric layers, a plurality of first electrode stripes, and a plurality of second stripes. Each light emitting layer is disposed on each first electrode, and each dielectric layer is disposed on each second electrode. Each first electrode stripe is disposed on the light emitting layers in each row, and each second electrode stripe is disposed on the dielectric layers in each row. Each first electrode, each light emitting layer and each first electrode stripe form an organic light emitting diode, and each second electrode, each dielectric layer and each second electrode stripe form a touch sensing capacitor.
    • 本发明提供了一种有机发光二极管触摸显示面板,其包括基板,多个第一电极和设置在基板上的多个第二电极,多个发光层,多个电介质层,多个第一电极 条纹和多个第二条纹。 每个发光层设置在每个第一电极上,并且每个电介质层设置在每个第二电极上。 每个第一电极条设置在每行的发光层上,并且每个第二电极条设置在每行的电介质层上。 每个第一电极,每个发光层和每个第一电极条纹形成有机发光二极管,并且每个第二电极,每个电介质层和每个第二电极条形成触摸感测电容器。
    • 66. 发明授权
    • Vertical thin-film transistor structure of display panel and method of fabricating the same
    • 显示面板的垂直薄膜晶体管结构及其制作方法
    • US08895979B2
    • 2014-11-25
    • US13937227
    • 2013-07-09
    • HannStar Display Corp.
    • Jung-Fang ChangMing-Chieh ChangJui-Chi Lai
    • H01L29/66H01L29/786H01L29/78
    • H01L29/78642H01L29/66666H01L29/6675H01L29/66969H01L29/7827H01L29/78663H01L29/78672H01L29/7869
    • A vertical thin-film transistor structure includes a substrate, a source electrode, an insulation layer, a drain electrode, two first channel layers, a gate insulation layer and a gate electrode, which are stacked upward in that order on the substrate. The first channel layers are respectively disposed at two opposite ends of the drain electrode, and extend from the upper surface of the drain electrode to the upper surface of the source electrode respectively. Each of the first channel layers contacts the source electrode and the drain electrode. The gate insulation layer is disposed on the source electrode, the first channel layers and the drain electrode. The gate electrode is disposed on the gate insulation layer and covers the first channel layers. Therefore, the volume of the conventional thin-film transistor structure shrinks, and the ratio of the volume of the conventional thin-film transistor structure to that of a pixel structure decreases.
    • 垂直薄膜晶体管结构包括基板,源电极,绝缘层,漏电极,两个第一沟道层,栅极绝缘层和栅电极,其在该基板上依次层叠。 第一沟道层分别设置在漏电极的两个相对端,分别从漏电极的上表面延伸到源电极的上表面。 第一通道层中的每一个接触源电极和漏电极。 栅极绝缘层设置在源电极,第一沟道层和漏电极上。 栅电极设置在栅极绝缘层上并覆盖第一沟道层。 因此,传统的薄膜晶体管结构的体积收缩,并且传统的薄膜晶体管结构的体积与像素结构的体积的比率减小。
    • 68. 发明授权
    • Pixel structure having patterned transparent conductive layer
    • 像素结构具有图案化的透明导电层
    • US08890157B2
    • 2014-11-18
    • US13831992
    • 2013-03-15
    • HannStar Display Corp.
    • Hsuan-Chen LiuHsien-Cheng ChangDa-Ching TangChien-Hao WuChing-Chao WangJung-Chen Lin
    • H01L29/04H01L29/10H01L31/036H01L31/0376H01L31/20H01L29/15H01L29/786H01L27/12
    • H01L29/78678H01L27/124
    • The present invention provides a pixel structure including a substrate, a thin-film transistor disposed on the substrate, a first insulating layer covering the thin-film transistor and the substrate, a common electrode, a connecting electrode, a second insulating layer, and a pixel electrode. The thin-film transistor includes a drain electrode. The first insulating layer has a first opening exposing the drain electrode. The common electrode and the connecting electrode are disposed on the first insulating layer. The connecting electrode extends into the first opening to be electrically connected to the drain electrode. The connecting electrode is electrically insulated from the common electrode. The second insulating layer covers the first insulating layer, the common electrode, the connecting electrode, and has a second opening exposing the connecting electrode. The pixel electrode is disposed on the second insulating layer and electrically connected to the connecting electrode through the second opening.
    • 本发明提供一种像素结构,包括基板,设置在基板上的薄膜晶体管,覆盖薄膜晶体管和基板的第一绝缘层,公共电极,连接电极,第二绝缘层和 像素电极。 薄膜晶体管包括漏电极。 第一绝缘层具有暴露漏电极的第一开口。 公共电极和连接电极设置在第一绝缘层上。 连接电极延伸到第一开口中以电连接到漏电极。 连接电极与公共电极电绝缘。 第二绝缘层覆盖第一绝缘层,公共电极,连接电极,并且具有暴露连接电极的第二开口。 像素电极设置在第二绝缘层上,并通过第二开口与连接电极电连接。