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61. 发明授权

US09259182B2 Portable electronic device 有权
标题翻译：便携式电子设备
公开(公告)号：US09259182B2
公开(公告)日：2016-02-16
申请号：US14518510
申请日：2014-10-20
申请人： Seiko Instruments Inc.
发明人： Hideki Okuda , Dai Terasawa , Teruo Kato
IPC分类号： A61B5/0408 , A61B5/00 , A41D1/00 , A41D13/12 , A61B5/024 , A61B5/0245
CPC分类号： A61B5/6804 , A41D1/002 , A41D13/1281 , A61B5/0006 , A61B5/02438 , A61B5/0245 , A61B5/0408 , A61B5/04085
摘要： To improve product lifetime as well as to increase wearing feeling, maintainability and productivity, and to suppress manufacturing costs and expenses of the user. A portable electronic device 10 includes a device body 20 arranged inside a garment W and housing an electronic component and a fixing member 30A formed separately from the device body 20 and arranged outside the garment W, which fixes the device body 20 so as to be attached and detached to and from the garment W in a state of sandwiching the garment W between the fixing member 30A and the device bogy 20 from the other side of the garment W. The fixing member 30A is formed so as to be elastically deformed, which is formed in a ring shape surrounding the device body 20. Gaps are provided on both sides of the device body 20 in the radial direction of the fixing member 30A between an inner peripheral surface of the fixing member 30A and the device body 20.
摘要翻译：提高产品寿命以及提高穿着感，可维护性和生产率，并且抑制使用者的制造成本和费用。便携式电子装置10包括设置在衣服W内的装置主体20，并且容纳电子部件和与装置主体20分开形成的固定部件30A，并且配置在衣物W的外侧，固定装置主体20使其附着并且在从服装W的另一侧将固定构件30A和装置转向架20夹在衣服W之间的状态下与衣服W分离。固定构件30A形成为弹性变形，即形成为围绕装置主体20的环形形状。在固定构件30A的内周面和装置主体20之间，在固定构件30A的径向方向上在装置主体20的两侧设置间隙。

62. 发明授权

US09252289B2 Non-volatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US09252289B2
公开(公告)日：2016-02-02
申请号：US13743485
申请日：2013-01-17
申请人： Seiko Instruments Inc.
发明人： Ayako Inoue , Kazuhiro Tsumura
IPC分类号： H01L21/335 , H01L21/8232 , H01L29/788 , H01L49/02 , G11C16/04
CPC分类号： H01L29/788 , G11C16/0408 , H01L28/20 , H01L29/7884
摘要： A non-volatile semiconductor memory device has a semiconductor substrate, an element isolation region disposed in a surface of the semiconductor substrate, a well region disposed along one principal surface of the semiconductor substrate, source and drain regions arranged in the well region, a gate oxide film arranged on the surface of the semiconductor substrate between the source region and the drain region, a floating gate disposed on the gate oxide film, and an insulating film disposed on a surface of the floating gate. A control gate is capacitively coupled to the floating gate disposed through intermediation of the insulating film. A resistive element is serially connected to the control gate. Write characteristics of the non-volatile semiconductor memory device are improved as a result of a delay effect of the resistive element serially connected to the control gate.
摘要翻译：非易失性半导体存储器件具有半导体衬底，设置在半导体衬底的表面中的元件隔离区，沿着半导体衬底的一个主表面设置的阱区，布置在阱区中的源极和漏极区，栅极在所述源极区域和所述漏极区域之间配置在所述半导体衬底的表面上的氧化膜，设置在所述栅极氧化膜上的浮置栅极以及设置在所述浮动栅极的表面上的绝缘膜。控制栅极电容耦合到通过绝缘膜布置的浮置栅极。电阻元件串联连接到控制门。作为串联连接到控制栅极的电阻元件的延迟效果，非易失性半导体存储器件的写入特性得到改善。

63. 发明授权

US09236727B2 Current mode step-down switching regulator 有权
标题翻译：电流模式降压开关稳压器
公开(公告)号：US09236727B2
公开(公告)日：2016-01-12
申请号：US11127009
申请日：2005-05-11
申请人： Atsuo Fukui
发明人： Atsuo Fukui
IPC分类号： H02H7/00 , H02H7/12 , H02M3/156 , H02M1/00
CPC分类号： H02H7/1213 , H02M3/156 , H02M2001/0025
摘要： Provided is a current mode step-down switching regulator which is capable of enhancing over-current limiting characteristics even when an over-current limiting function operates to reduce an output voltage. The current mode step-down switching regulator includes a pulse adjusting circuit. When an over-current is detected, a switching output signal is thinned out by the pulse adjusting circuit to be outputted in order to reduce an apparent oscillation frequency, thereby reducing an influence by response delay in an over-current detecting comparator.
摘要翻译：提供了一种电流模式降压开关调节器，其即使在过流限制功能工作以减小输出电压时也能够增强过流限制特性。电流模式降压开关稳压器包括脉冲调节电路。当检测到过电流时，通过脉冲调整电路对切换输出信号进行稀疏化以便输出，以便降低视在振荡频率，从而减小过电流检测比较器中的响应延迟的影响。

64. 发明授权

US09231081B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US09231081B2
公开(公告)日：2016-01-05
申请号：US13779860
申请日：2013-02-28
申请人： Seiko Instruments Inc.
发明人： Naoto Saitoh
IPC分类号： H01L21/76 , H01L29/66 , H01L29/417 , H01L29/78 , H01L29/06 , H01L29/10
CPC分类号： H01L29/41741 , H01L29/0657 , H01L29/1095 , H01L29/41766 , H01L29/66727 , H01L29/66734 , H01L29/7809 , H01L29/7813
摘要： In a method of manufacturing a semiconductor device, a body region is formed in an epitaxial layer provided on a semiconductor substrate. A part of a semiconductor material forming the body region surface is removed to form a convex-type contact region protruding from the body region surface and to form a shallow trench surrounding the convex-type contact region. A deep trench region is formed so as to extend from the shallow trench surface to inside of the epitaxial layer. A gate insulating film is formed on an inner wall of the deep trench region which is filled with polycrystalline silicon that is held in contact with the gate insulating film. A source region and a body contact region are formed in the shallow trench and the convex-type contact region, respectively, and a silicide layer is formed to connect the source region and the body contact region to each other.
摘要翻译：在制造半导体器件的方法中，在设置在半导体衬底上的外延层中形成体区。形成身体区域表面的半导体材料的一部分被去除以形成从身体区域表面突出的凸型接触区域，并形成围绕凸型接触区域的浅沟槽。深沟槽区域形成为从浅沟槽表面延伸到外延层的内部。栅极绝缘膜形成在深沟槽区域的内壁上，该沟槽区域被填充有与栅极绝缘膜保持接触的多晶硅。分别在浅沟槽和凸型接触区域中形成源极区域和体接触区域，并且形成硅化物层以将源极区域和本体接触区域彼此连接。

65. 外观设计

USD746469S1 Biological information detection device 有权
标题翻译：生物信息检测装置
公开(公告)号：USD746469S1
公开(公告)日：2015-12-29
申请号：US29488658
申请日：2014-04-22
申请人： SEIKO INSTRUMENTS INC.
设计人： Hideki Okuda , Teruo Kato , Dai Terasawa

66. 发明授权

US09172347B2 Wafer, method of manufacturing package, and piezoelectric oscillator 有权
标题翻译：晶圆，制造方法和压电振荡器
公开(公告)号：US09172347B2
公开(公告)日：2015-10-27
申请号：US13406992
申请日：2012-02-28
申请人： Toshiyuki Wagai
发明人： Toshiyuki Wagai
IPC分类号： H01L21/78 , H03H3/02 , H03H9/10
CPC分类号： H03H3/02 , H03H9/1014 , H03H2003/026 , Y10T428/2457
摘要： To provide a wafer, a method of manufacturing a package, and a piezoelectric oscillator in which warping of a wafer body is reduced to improve the yields. A wafer for lid substrate has a product region in which a number of recess portions for cavities are formed and a non-forming region of the recess portions set in the product region in the form of a straight line extending along a diameter direction of the product region.
摘要翻译：提供晶片，制造封装的方法和压电振荡器，其中晶片体的翘曲减小以提高产量。用于盖基板的晶片具有产品区域，在该产品区域中形成有用于空腔的多个凹部，并且凹陷部的非成形区域设置在沿着产品的直径方向延伸的直线形式的产品区域中地区。

67. 发明授权

US09158937B2 Information processing device and information processing program 有权
标题翻译：信息处理设备和信息处理程序
公开(公告)号：US09158937B2
公开(公告)日：2015-10-13
申请号：US13985586
申请日：2011-12-08
申请人： Shinichi Murao
发明人： Shinichi Murao
IPC分类号： G06F21/64 , H04L9/32
CPC分类号： G06F21/64 , H04L9/3247 , H04L2209/68
摘要： An information processing device manages the protection state of original data by long-term signature data in storage-target data obtained by combining the long-term signature data and the original data. Management information having a management-target value for each management item obtained from the storage-target data recorded therein is acquired. A management-target value of a predetermined management item is acquired from the acquired management information. The acquired management-target value is compared with a value acquired from the storage-target data or a value acquired from the outside to determine the state of management. A result corresponding to the determined state of management is outputted.
摘要翻译：信息处理装置通过组合长期签名数据和原始数据而获得的存储目标数据中的长期签名数据来管理原始数据的保护状态。获取具有从其中记录的存储目标数据获得的每个管理项目的管理目标值的管理信息。从所获取的管理信息中获取预定管理项目的管理目标值。将获取的管理目标值与从存储目标数据获取的值或从外部获取的值进行比较以确定管理状态。输出与确定的管理状态对应的结果。

68. 发明授权

US09142983B2 Battery protection IC and battery device 有权
标题翻译：电池保护IC和电池装置
公开(公告)号：US09142983B2
公开(公告)日：2015-09-22
申请号：US13553174
申请日：2012-07-19
申请人： Yuichiro Kitajima , Naoto Kobayashi
发明人： Yuichiro Kitajima , Naoto Kobayashi
IPC分类号： H01M2/34 , H02J7/00 , H01M10/42 , H01M10/48 , H01M10/46
CPC分类号： H02J7/0029 , H01M2/342 , H01M10/425 , H01M10/46 , H01M10/48 , H02J7/0034 , H02J2007/0037 , H02J2007/0039 , H02J2007/004
摘要： Provided are a battery protection IC and a battery device, which are capable of ensuring safety even when a charger is connected in a reverse direction. The battery protection IC includes a first switch element provided between an overcurrent detection terminal and a VDD terminal so that, when the charger is connected with reverse polarity, the first switch element interrupts a current path between the overcurrent detection terminal and the VDD terminal. The battery protection IC further includes a second switch element provided between a charge control terminal and the VDD terminal so that, when the charger is connected with reverse polarity, the second switch element interrupts a current path between the charge control terminal and the VDD terminal.
摘要翻译：提供一种电池保护IC和电池装置，其即使在逆向连接充电器时也能够确保安全性。电池保护IC包括设置在过电流检测端子和VDD端子之间的第一开关元件，使得当充电器以相反的极性连接时，第一开关元件中断过电流检测端子和VDD端子之间的电流路径。电池保护IC还包括设置在充电控制端子和VDD端子之间的第二开关元件，使得当充电器以相反极性连接时，第二开关元件中断充电控制端子和VDD端子之间的电流路径。

69. 发明授权

US09136145B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US09136145B2
公开(公告)日：2015-09-15
申请号：US13846584
申请日：2013-03-18
申请人： Seiko Instruments Inc.
发明人： Hirofumi Harada
IPC分类号： H01L21/58 , H01L23/00 , H01L23/495
CPC分类号： H01L21/58 , H01L23/49513 , H01L23/4952 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/05553 , H01L2224/05624 , H01L2224/2919 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/4848 , H01L2224/73265 , H01L2924/00014 , H01L2924/07802 , H01L2924/10161 , H01L2924/13091 , H01L2924/181 , H01L2924/00012 , H01L2224/45099 , H01L2924/00
摘要： Provided is a semiconductor integrated circuit device having flexible pin arrangement. A semiconductor integrated circuit is bonded to a die pad with an insulating paste, and the potential of the die pad is fixed through a bonding wire from an Al pad provided on the surface of the semiconductor integrated circuit. In the case of a P-type semiconductor substrate, the die pad is set as a terminal other than a terminal having a minimum operating potential of the semiconductor integrated circuit.
摘要翻译：提供了具有柔性引脚布置的半导体集成电路器件。利用绝缘膏将半导体集成电路接合到管芯焊盘，并且通过接合线将焊盘的电位从设置在半导体集成电路的表面上的Al焊盘固定。在P型半导体基板的情况下，将芯片焊盘设定为具有半导体集成电路的最小工作电位的端子以外的端子。

70. 发明授权

US09111644B2 Readout circuit and semiconductor device 有权
标题翻译：读出电路和半导体器件
公开(公告)号：US09111644B2
公开(公告)日：2015-08-18
申请号：US14029251
申请日：2013-09-17
申请人： Seiko Instruments Inc.
发明人： Kotaro Watanabe , Makoto Mitani
IPC分类号： G11C29/04 , G11C7/02 , G11C7/10
CPC分类号： G11C29/04 , G11C7/02 , G11C7/106 , G11C7/1063
摘要： Provided is a readout circuit capable of detecting inversion of retained data caused by a noise, such as static electricity. The readout circuit is configured to retain opposing data in a first latch circuit and a second latch circuit in a readout period so as to be capable of detecting an anomaly of the retained data by making use of the fact that the data in the first latch circuit and the second latch circuit are inverted in the same direction due to a noise, such as static electricity.
摘要翻译：提供一种能够检测由诸如静电之类的噪声引起的保留数据的反转的读出电路。读出电路被配置为在读出期间将相对数据保存在第一锁存电路和第二锁存电路中，以便能够通过利用第一锁存电路中的数据来检测保留数据的异常并且第二锁存电路由于诸如静电的噪声而在相同的方向上反转。

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