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    • 62. 发明申请
    • Double Wavelength Semiconductor Light Emitting Device and Method of Manufacturing the Same
    • 双波长半导体发光器件及其制造方法
    • US20090127570A1
    • 2009-05-21
    • US12224287
    • 2007-02-23
    • Shinichi TamaiKen NakaharaAtsushi Yamaguchi
    • Shinichi TamaiKen NakaharaAtsushi Yamaguchi
    • H01L21/20H01L33/00
    • H01S5/4031B82Y20/00H01S5/0425H01S5/20H01S5/22H01S5/2214H01S5/305H01S5/3063H01S5/3211H01S5/34333H01S5/4087H01S2304/04
    • Provided are a double wavelength semiconductor light emitting device, having an n electrode and p electrode disposed on the same surface side, in which the area of a chip is reduced to increase the number of chips taken from one single wafer, in which light focusing performance of double wavelength optical beams are improved, and in which an active layer of a light emitting element having a longer wavelength can be prevented from deteriorating in a process of manufacturing; and a method of manufacturing the same.Semiconductor lasers D1 and D2 as two light emitting elements having different wavelengths are integrally formed on a common substrate 1. A semiconductor laminate A is deposited on an n-type contact layer 21 in a semiconductor laser D1, and a semiconductor laminate B is deposited in a semiconductor laser D2. The semiconductor laminate A and semiconductor laminate B are configured to have different layer structures. An n electrode 12 formed between the semiconductor lasers D1 and D2 is shared by the semiconductor lasers D1 and D2, and serves as a common electrode on an n side. Additionally, the semiconductor laminate having a shorter wavelength is crystal-grown firstly.
    • 提供了一种双波长半导体发光器件,其具有设置在同一表面侧的n电极和p电极,其中芯片的面积减小以增加从单个晶片获取的芯片的数量,其中光聚焦性能 双波长光束的改善,其中可以防止在制造过程中具有较长波长的发光元件的有源层劣化; 及其制造方法。 作为具有不同波长的两个发光元件的半导体激光器D1和D2一体地形成在公共基板1上。半导体层叠体A沉积在半导体激光器D1中的n型接触层21上,并且半导体层叠体B沉积在 半导体激光器D2。 半导体层叠体A和半导体层叠体B具有不同的层结构。 形成在半导体激光器D1和D2之间的n电极12由半导体激光器D1和D2共享,并且用作n侧的公共电极。 此外,首先将具有较短波长的半导体层叠体晶体生长。
    • 63. 发明申请
    • Semiconductor Light Emitting Device and Method for Manufacturing the Same
    • 半导体发光器件及其制造方法
    • US20090026475A1
    • 2009-01-29
    • US12087173
    • 2006-12-28
    • Atsushi YamaguchiKen Nakahara
    • Atsushi YamaguchiKen Nakahara
    • H01L33/00
    • H01L33/42H01L33/20H01L33/44H01L2933/0083
    • Concaves and convexes are formed in a light transmitting conductive layer provided on a surface of a light emitting device made of nitride semiconductor, thereby light emitted from a light emitting layer is totally reflected repeatedly in a semiconductor lamination portion and a substrate and can be effectively taken out without attenuation, and external quantum efficiency can be improved. A semiconductor lamination portion (6) is formed by laminating nitride semiconductor layers including an n-type layer (3) and a p-type layer (5) on one side of a substrate (1) so as to form a light emitting layer, and a light transmitting conductive layer (7) is provided at a surface side of the semiconductor lamination portion. A concave-convex pattern, i.e., concaves (7a), is provided on a surface of the light transmitting conductive layer. A p-side electrode (8) is provided on the light transmitting conductive layer, and an n-side electrode (9) is electrically connected to the n-type layer exposed by etching a part of the semiconductor lamination portion.
    • 凹凸形成在由氮化物半导体制成的发光元件的表面上的透光性导电层中,从发光层发出的光在半导体层叠部和基板中反复全反射,能够有效地取出 没有衰减,可以提高外部量子效率。 通过在衬底(1)的一侧层叠包括n型层(3)和p型层(5)的氮化物半导体层以形成发光层,形成半导体层叠部(6) 并且在半导体层叠部的表面侧设置有透光性导电层(7)。 在透光导电层的表面上设置凹凸图案,即凹部(7a)。 p侧电极(8)设置在透光导电层上,n侧电极(9)与通过蚀刻半导体层叠部分的一部分露出的n型层电连接。
    • 67. 发明申请
    • Electronic apparatus with battery unit
    • 带电池单元的电子设备
    • US20070035273A1
    • 2007-02-15
    • US11326309
    • 2006-01-06
    • Satoshi KazamaYoshiyasu NakashimaHiroshi YamadaAtsushi Yamaguchi
    • Satoshi KazamaYoshiyasu NakashimaHiroshi YamadaAtsushi Yamaguchi
    • H02J7/00
    • H02J7/0063G01R31/3606G01R31/3648H02J7/34
    • A battery device for an electronic apparatus includes a rechargeable secondary battery, a fuel cell, and a run time computing unit receiving, from the secondary battery, data representative of a voltage versus residual-capacity characteristic of the secondary battery, and receiving, from the fuel cell, data representative of a residual capacity of the fuel cell. The computing unit determines data representative of a residual capacity and a run time of the secondary battery in accordance with the data representative of the voltage versus residual-capacity characteristic and with supply voltage and supply current of the secondary battery, determines a run time of the fuel cell in accordance with the data representative of the fuel cell residual capacity and with supply current of the fuel cell, and estimates which of power capacities of the secondary battery and fuel cell reaches predetermined residual capacities earlier. If it is estimated that the power capacity of the fuel cell reaches its predetermined residual capacity earlier, the computing unit determines a run time of the battery device, in accordance with the data representative of the secondary battery residual capacity, the data representative of the fuel cell residual capacity, and the supply currents of the secondary battery and fuel cell. The computing unit supplies data representative of the thus determined run time of the battery device to a power management unit of the electronic apparatus. Thus the battery device including the fuel cell can be used with a conventional electronic apparatus.
    • 电子设备的电池装置包括可再充电二次电池,燃料电池和运行时间计算单元,其从二次电池接收表示二次电池的电压与剩余容量特性的数据,并从 燃料电池,表示燃料电池的剩余容量的数据。 计算单元根据表示电压对剩余容量特性的数据和二次电池的电源电压和电源电流来确定表示二次电池的剩余容量和运行时间的数据,确定二次电池的运行时间 燃料电池根据表示燃料电池剩余容量的数据和燃料电池的供给电流,并且估计二次电池和燃料电池的功率容量哪一个更早地达到预定的剩余容量。 如果估计燃料电池的电力容量早于其预定的剩余容量,则计算单元根据代表二次电池剩余容量的数据确定电池装置的运行时间,代表燃料的数据 电池剩余容量和二次电池和燃料电池的供电电流。 计算单元将表示如此确定的电池装置的运行时间的数据提供给电子设备的电源管理单元。 因此,包括燃料电池的电池装置可以与传统的电子装置一起使用。