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61. 发明申请

US20170005210A1 ALUMINUM-DOPED ZINC OXYSULFIDE EMITTERS FOR ENHANCING EFFICIENCY OF CHALCOGENIDE SOLAR CELL 审中-公开
标题翻译：用于提高聚氯乙烯太阳能电池效率的铝 - 锌掺杂氧化物发射体
公开(公告)号：US20170005210A1
公开(公告)日：2017-01-05
申请号：US14755803
申请日：2015-06-30
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： TALIA S. GERSHON , OKI GUNAWAN , JEEHWAN KIM , YUN SEOG LEE
IPC分类号： H01L31/0296 , H01L31/18 , H01L31/032 , H01L31/0376 , H01L31/0224
CPC分类号： H01L31/02966 , H01L31/02963 , H01L31/0326 , H01L31/072 , H01L31/0749 , H01L31/1832 , Y02E10/541
摘要： A photovoltaic device includes a substrate, a first electrode formed on the substrate and a p-type absorber layer including a chalcogenide compound. An n-type layer includes a zinc oxysulfide material having a sulfur content adjusted to match a feature of the absorber layer. A transparent contact is formed on the n-type layer.
摘要翻译：光电器件包括衬底，形成在衬底上的第一电极和包含硫族化合物的p型吸收层。 n型层包括氧化硫化锌材料，其硫含量被调节以匹配吸收层的特征。在n型层上形成透明接触。

62. 发明授权

US09537043B2 Photoelectric conversion device and manufacturing method thereof 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US09537043B2
公开(公告)日：2017-01-03
申请号：US13087714
申请日：2011-04-15
申请人： Shunpei Yamazaki , Hajime Kimura , Yoshiaki Ito , Takuro Ohmaru
发明人： Shunpei Yamazaki , Hajime Kimura , Yoshiaki Ito , Takuro Ohmaru
IPC分类号： H01L31/0203 , H01L31/20 , C23C14/08 , C23C14/34 , H01L31/0296 , H01L31/0304 , H01L31/0312 , H01L31/0368 , H01L31/0376 , H01L31/0392 , H01L31/075 , H01L31/18 , H02S40/32 , H01L21/02
CPC分类号： H01L31/202 , C23C14/08 , C23C14/34 , H01L21/02422 , H01L21/02538 , H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L21/02672 , H01L31/0296 , H01L31/0304 , H01L31/0312 , H01L31/03685 , H01L31/03762 , H01L31/0392 , H01L31/075 , H01L31/1816 , H02S40/32 , Y02E10/544 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： It is an object to reduce the region of a photoelectric conversion element which light does not reach, to suppress deterioration of power generation efficiency, and to suppress manufacturing cost of a voltage conversion element. The present invention relates to a transmissive photoelectric conversion device which includes a photoelectric conversion element including an n-type semiconductor layer, an intrinsic semiconductor layer, and a p-type semiconductor layer; a voltage conversion element which is overlapped with the photoelectric conversion element and which includes an oxide semiconductor film for a channel formation region; and a conductive element which electrically connects the photoelectric conversion element and the voltage conversion element. The photoelectric conversion element is a solar cell. The voltage conversion element includes a transistor having a channel formation region including an oxide semiconductor film. The voltage conversion element is a DC-DC converter.
摘要翻译：本发明的目的是减少不能到达的光电转换元件的区域，以抑制发电效率的劣化，并且抑制电压转换元件的制造成本。本发明涉及一种透射光电转换装置，其包括：包括n型半导体层，本征半导体层和p型半导体层的光电转换元件; 电压转换元件，其与光电转换元件重叠并且包括用于沟道形成区域的氧化物半导体膜; 以及电连接光电转换元件和电压转换元件的导电元件。光电转换元件是太阳能电池。电压转换元件包括具有包括氧化物半导体膜的沟道形成区的晶体管。电压转换元件是DC-DC转换器。

63. 发明授权

US09525083B2 Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer 有权
标题翻译：具有差异化P型和N型结构的太阳能电池发射极区域制造，并结合了多功能钝化和接触层
公开(公告)号：US09525083B2
公开(公告)日：2016-12-20
申请号：US14671781
申请日：2015-03-27
申请人： Staffan Westerberg , Seung Bum Rim
发明人： Staffan Westerberg , Seung Bum Rim
IPC分类号： H01L31/00 , H01L31/0224 , H01L31/0376 , H01L31/20
CPC分类号： H01L31/02167 , H01L31/02168 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0288 , H01L31/03682 , H01L31/03762 , H01L31/0682 , H01L31/182 , H01L31/1868 , H01L31/202 , Y02E10/546 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A P-type emitter region is disposed on the back surface of the substrate. An N-type emitter region is disposed in a trench formed in the back surface of the substrate. An N-type passivation layer is disposed on the N-type emitter region. A first conductive contact structure is electrically connected to the P-type emitter region. A second conductive contact structure is electrically connected to the N-type emitter region and is in direct contact with the N-type passivation layer.
摘要翻译：描述了具有差异化的P型和N型结构的太阳能电池发射极区域的制造方法，并结合多功能钝化和接触层以及所得到的太阳能电池。在一个示例中，太阳能电池包括具有受光面和背面的基板。 P型发射极区域设置在基板的背面。 N型发射极区域设置在形成在衬底的背面中的沟槽中。在N型发射极区域上设置N型钝化层。第一导电接触结构电连接到P型发射极区域。第二导电接触结构电连接到N型发射极区域并与N型钝化层直接接触。

64. 发明授权

US09508944B2 Composite organic-inorganic energy harvesting devices and methods 有权
标题翻译：复合有机无机能量收集装置及方法
公开(公告)号：US09508944B2
公开(公告)日：2016-11-29
申请号：US13828708
申请日：2013-03-14
申请人： THE BOEING COMPANY , UNIVERSITY OF WASHINGTON CENTER FOR COMMERCIALIZATION
发明人： Marvi A. Matos , Alpana N. Ranade , Danilo C. Pozzo
IPC分类号： H01L31/044 , H01L51/42 , H01L31/0384 , H01L31/0376 , H01L31/0256 , H01L51/00
CPC分类号： H01L51/4226 , H01L31/0376 , H01L31/0384 , H01L51/0004 , H01L51/0036 , H01L51/0037 , H01L51/0039 , H01L51/4213 , H01L51/4233 , H01L2031/0344 , Y02E10/549 , Y02P70/521
摘要： A hybrid organic-inorganic thin film is provided. The hybrid organic-inorganic thin film comprising: an organic-phase comprising a porous organic nanostructure comprised of an interpenetrating network having at least one dimension between 0.1 and 100 nm; and an inorganic phase at least partially distributed within the porosity of the organic phase. In a first aspect, the organic phase has a first band gap and the inorganic phase has a second band gap different from the first band gap. A method of producing an organic-inorganic energy harvesting device and a device therefrom comprising the hybrid organic-inorganic thin film is provided.
摘要翻译：提供了混合有机 - 无机薄膜。所述杂化有机 - 无机薄膜包括：有机相，其包含多孔有机纳米结构，所述多孔有机纳米结构由具有0.1至100nm的至少一个尺寸的互穿网络组成; 和至少部分分布在有机相的孔隙中的无机相。在第一方面，有机相具有第一带隙，并且无机相具有不同于第一带隙的第二带隙。提供了一种生产有机 - 无机能量收集装置的方法及其装置，包括混合有机 - 无机薄膜。

65. 发明申请

US20160343893A1 METHOD FOR MANUFACTURING THIN-FILM SOLAR CELL AND THIN-FILM SOLAR CELL 审中-公开
标题翻译：制造薄膜太阳能电池和薄膜太阳能电池的方法
公开(公告)号：US20160343893A1
公开(公告)日：2016-11-24
申请号：US14763054
申请日：2015-02-15
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Qingrong REN , Lu WANG , Wei GUO
IPC分类号： H01L31/0445 , H01L31/18 , H01L31/0376 , H01L31/0368
摘要： The present disclosure provides a method for manufacturing a thin-film solar cell, and the thin-film solar cell. The method includes steps of: forming a first electrode on a substrate; forming an N-type doped layer and an intrinsic semiconductor film on the first electrode; doping ions into the intrinsic semiconductor film, and subjecting the ion-doped intrinsic semiconductor film to activation treatment using an excimer laser annealing (ELA) process, so as to form a P-type doped layer at an upper layer of the intrinsic semiconductor film; and forming a second electrode on the P-type doped layer.
摘要翻译：本公开提供了一种制造薄膜太阳能电池的方法和薄膜太阳能电池。该方法包括以下步骤：在衬底上形成第一电极; 在第一电极上形成N型掺杂层和本征半导体膜; 将掺杂离子注入到本征半导体膜中，并且使用准分子激光退火（ELA）工艺对离子掺杂的本征半导体膜进行激活处理，以在本征半导体膜的上层形成P型掺杂层; 以及在所述P型掺杂层上形成第二电极。

66. 发明申请

US20160329443A1 SOLAR CELL WITH A LOW-RESISTIVITY TRANSPARENT CONDUCTIVE OXIDE LAYER 审中-公开
标题翻译：具有低电阻透明导电氧化层的太阳能电池
公开(公告)号：US20160329443A1
公开(公告)日：2016-11-10
申请号：US14705845
申请日：2015-05-06
申请人： SolarCity Corporation
发明人： Wei Wang , Christopher Y. Liao , Jianming Fu , Zheng Xu
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/0352 , H01L31/0368 , H01L31/074 , C23C14/08 , H01L31/0376
CPC分类号： H01L31/022466 , C23C14/086 , C23C14/5806 , C23C18/1653 , C23C18/54 , C25D5/022 , C25D17/10 , H01L31/03529 , H01L31/03682 , H01L31/03762 , H01L31/074 , H01L31/1884 , Y02E10/548
摘要： One embodiment of the present invention provides a solar cell that includes a crystalline silicon base layer, a first quantum tunneling barrier layer deposited on a first side of the base layer, and a second quantum tunneling barrier layer deposited on a second side of the base layer. The solar cell further includes a doped amorphous silicon emitter layer positioned on the first side of the base layer. The first quantum tunneling barrier layer is between the emitter layer and the base layer. Also included is a doped amorphous silicon surface field layer positioned on the second side of the base layer. The second quantum tunneling barrier layer is between the surface field layer and the base layer. The solar cell further includes a transparent conductive oxide layer adjacent to the emitter layer or surface field layer. The transparent conductive oxide layer comprises hydrogen and indium oxide, indium-titanium-oxide, or indium-tungsten-oxide.
摘要翻译：本发明的一个实施例提供了一种太阳能电池，其包括晶体硅基底层，沉积在基底层的第一侧上的第一量子隧道势垒层和沉积在基底层的第二侧上的第二量子隧道势垒层。太阳能电池还包括位于基层的第一侧上的掺杂非晶硅发射极层。第一量子隧道势垒层位于发射极层和基极层之间。还包括位于基层的第二侧上的掺杂非晶硅表面场层。第二量子隧道势垒层位于表面场层和基层之间。太阳能电池还包括与发射极层或表面场层相邻的透明导电氧化物层。透明导电氧化物层包括氢和氧化铟，氧化铟钛或铟 - 氧化钨。

67. 发明申请

US20160322416A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PHOTODIODE ARRAY, AND IMAGING APPARATUS 有权
标题翻译：半导体器件，制造半导体器件的方法，光电子阵列和成像装置
公开(公告)号：US20160322416A1
公开(公告)日：2016-11-03
申请号：US15139487
申请日：2016-04-27
申请人： NLT Technologies, Ltd.
发明人： Shuhei NARA
IPC分类号： H01L27/146 , H01L31/20 , H01L31/0376 , H01L29/66 , H01L29/786 , H01L29/24
CPC分类号： H01L27/14643 , H01L27/14616 , H01L27/14632 , H01L27/14687 , H01L27/14689 , H01L29/24 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L31/03762 , H01L31/1055 , H01L31/202
摘要： A semiconductor device includes: a thin film transistor including an oxide semiconductor layer that is formed in an island shape and contains at least one or more elements among indium, gallium, zinc, and tin and oxygen, a source and a drain that are connected to the oxide semiconductor layer; a protective film of at least one or more layers that is formed in an upper layer of the oxide semiconductor layer, and an opening portion that is disposed in the protective film and has a position and a size for including a channel region or a back channel region of the oxide semiconductor layer; and a photodiode that is disposed in an upper layer upper than the oxide semiconductor layer of the thin film transistor and includes a hydrogenated amorphous silicon layer.
摘要翻译：半导体器件包括：薄膜晶体管，其包括形成为岛状并且包含铟，镓，锌和锡中的至少一种或多种元素的氧化物半导体层和氧，源极和漏极，其连接到氧化物半导体层; 形成在所述氧化物半导体层的上层中的至少一层以上的保护膜，以及设置在所述保护膜中并且具有位置和尺寸的开口部，所述开口部包括沟道区域或背沟道氧化物半导体层的区域; 以及设置在比薄膜晶体管的氧化物半导体层高的上层的光电二极管，并且包括氢化非晶硅层。

68. 发明申请

US20160308078A1 METHOD OF ETCHING A SEMICONDUCTOR LAYER OF A PHOTOVOLTAIC DEVICE 审中-公开
公开(公告)号：US20160308078A1
公开(公告)日：2016-10-20
申请号：US15196652
申请日：2016-06-29
申请人： First Solar, Inc.
发明人： Oleh P. Karpenko , Thomas A. Sorenson , Jianjun Wang
IPC分类号： H01L31/0236 , H01L31/032 , H01L31/0296 , H01L31/074 , H01L31/0288 , H01L31/073 , H01L31/0749 , H01L31/0224 , H01L31/0376
CPC分类号： H01L31/02363 , H01L31/022425 , H01L31/022441 , H01L31/0288 , H01L31/0296 , H01L31/02963 , H01L31/0323 , H01L31/0376 , H01L31/03762 , H01L31/073 , H01L31/074 , H01L31/0749 , H01L31/208 , Y02E10/50 , Y02P70/521
摘要： A method and apparatus provide for a roughened back surface of a semiconductor absorber layer of a photovoltaic device to improve adhesion. The roughened back surface may be achieved through an etching process.

69. 发明申请

US20160300967A1 PHOTOVOLTAIC DEVICE 审中-公开
标题翻译：光电器件
公开(公告)号：US20160300967A1
公开(公告)日：2016-10-13
申请号：US14777800
申请日：2014-03-14
申请人： CHOSHU INDUSTRY CO., LTD.
发明人： Eiji KOBAYASHI
IPC分类号： H01L31/0376 , H01L31/0224 , H01L31/02 , H01L31/028
CPC分类号： H01L31/03762 , H01L31/0201 , H01L31/022433 , H01L31/022466 , H01L31/028 , H01L31/0747 , Y02E10/50
摘要： Provided is a photo-electric power generating device having a great fill factor. A photo-electric power generating device 10 including: a multilayered photo-electric power generating element 11; a first collector member 12 overlaid on one face of the photo-electric power generating element 11; and a second collector member 13 overlaid on other face of the photo-electric power generating element 11, the photo-electric power generating element 11 including: an n-type crystal semiconductor substrate 14; a first intrinsic amorphous silicon thin film 15, a p-type amorphous silicon thin film 16 and a first transparent conductive film 17 overlaid in this order on the side provided with the first collector member 12 on the n-type crystal semiconductor substrate 14; and an n-type amorphous silicon thin film 19 and a second transparent conductive film 20 overlaid in this order on the side provided with the second collector member 13 on the n-type crystal semiconductor substrate 14, in which the p-type amorphous silicon thin film 16 has a thickness of less than 6 nm, and the maximum width of the nonoverlaid region 25 of the first collector member 12 on the surface of the first transparent conductive film 17 is less than 2 mm.
摘要翻译：提供具有很大填充因子的光电发生装置。一种光电发生装置10，包括：多层光电发生元件11; 覆盖在光电发生元件11的一个面上的第一集电体12; 以及重叠在光电发生元件11的另一面上的第二集电体13，该光电发生元件11包括：n型晶体半导体衬底14; 在n型晶体半导体基板14上设置有第一集电体12的一侧依次重叠第一本征非晶硅薄膜15，p型非晶硅薄膜16和第一透明导电膜17; 以及n型非晶硅薄膜19和第二透明导电膜20依次叠置在n型晶体半导体基板14上的设置有第二集电体13的一侧，其中p型非晶硅薄膜薄膜16的厚度小于6nm，第一透明导电膜17的表面上的第一集电体12的非覆盖区域25的最大宽度小于2mm。

70. 发明授权

US09450132B2 Photoelectric conversion device and manufacturing method thereof 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US09450132B2
公开(公告)日：2016-09-20
申请号：US14514552
申请日：2014-10-15
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Sho Kato , Yoshikazu Hiura , Akihisa Shimomura , Takashi Ohtsuki , Satoshi Toriumi , Yasuyuki Arai
IPC分类号： H01L31/077 , H01L31/20 , H01L21/02 , H01L31/036 , H01L31/0376 , H01L31/075 , H01L31/18
CPC分类号： H01L31/077 , H01L21/0237 , H01L21/02532 , H01L21/0262 , H01L21/02636 , H01L31/036 , H01L31/0376 , H01L31/075 , H01L31/1804 , H01L31/20 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： An object is to increase conversion efficiency of a photoelectric conversion device without increase in the manufacturing steps. The photoelectric conversion device includes a first semiconductor layer formed using a single crystal semiconductor having one conductivity type which is formed over a supporting substrate, a buffer layer including a single crystal region and an amorphous region, a second semiconductor layer which includes a single crystal region and an amorphous region and is provided over the butler layer, and a third semiconductor layer having a conductivity type opposite to the one conductivity type, which is provided over the second semiconductor layer. A proportion of the single crystal region is higher than that of the amorphous region on the first semiconductor layer side in the second semiconductor layer, and the proportion of the amorphous region is higher than that of the single crystal region on the third semiconductor layer side.
摘要翻译：目的在于提高光电转换装置的转换效率，而不增加制造步骤。光电转换装置包括使用在支撑基板上形成的具有一种导电类型的单晶半导体形成的第一半导体层，包括单晶区域和非晶区域的缓冲层，包括单晶区域的第二半导体层和非晶区域，并且设置在管状层上方，以及设置在第二半导体层上的具有与一种导电类型相反的导电类型的第三半导体层。单晶区域的比例高于第二半导体层中的第一半导体层侧的非晶区域的比例，并且非晶区域的比例高于第三半导体层侧的单晶区域的比例。

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