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1. 发明申请

US20180145196A1 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20180145196A1
公开(公告)日：2018-05-24
申请号：US15821026
申请日：2017-11-22
申请人： LG Electronics Inc.
发明人： Jungmin HA , Sungyeon CHO , Sangwook PARK
IPC分类号： H01L31/048 , H01L31/0236 , H01L31/0352 , H01L31/18
CPC分类号： H01L31/048 , H01L31/022425 , H01L31/02363 , H01L31/0352 , H01L31/03685 , H01L31/0747 , H01L31/1824 , H01L31/1868 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Disclosed is a solar cell including a semiconductor substrate having a first surface and a second surface that is opposite the first surface, each of which includes a first edge area, a second edge area, and a cell area located between the first and second edge areas, a first passivation layer formed on the cell area of the first surface of the semiconductor substrate, a first conductive semiconductor layer disposed on the first passivation layer, and a first electrode disposed on the first conductive semiconductor layer. The first edge area of the first surface of the semiconductor substrate is exposed.

2. 发明授权

US09450139B2 Manufacturing method of semiconductor film, manufacturing method of semiconductor device, and manufacturing method of photoelectric conversion device 有权
标题翻译：半导体膜的制造方法，半导体装置的制造方法以及光电转换装置的制造方法
公开(公告)号：US09450139B2
公开(公告)日：2016-09-20
申请号：US14978463
申请日：2015-12-22
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Tetsuhiro Tanaka , Erika Kato
IPC分类号： H01L31/20 , H01L21/02 , H01L29/04 , H01L29/66 , H01L31/0304 , H01L31/0368 , H01L31/0376 , H01L31/072 , H01L31/0735 , H01L31/113 , H01L31/18 , H01L31/105 , H01L29/786
CPC分类号： H01L31/20 , H01L21/02532 , H01L21/02576 , H01L21/02592 , H01L21/0262 , H01L29/04 , H01L29/66765 , H01L29/78648 , H01L29/78696 , H01L31/0304 , H01L31/03685 , H01L31/03687 , H01L31/0376 , H01L31/03762 , H01L31/03765 , H01L31/072 , H01L31/0735 , H01L31/105 , H01L31/1136 , H01L31/1808 , H01L31/1812 , H01L31/1816 , H01L31/1824 , H01L31/1852 , H01L31/202 , Y02E10/544 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A method for forming an amorphous semiconductor which contains an impurity element and has low resistivity and a method for manufacturing a semiconductor device with excellent electrical characteristics with high yield are provided. In the method for forming an amorphous semiconductor containing an impurity element, which utilizes a plasma CVD method, pulse-modulated discharge inception voltage is applied to electrodes under the pressure and electrode distance with which the minimum discharge inception voltage according to Paschen's Law can be obtained, whereby the amorphous semiconductor which contains an impurity element and has low resistivity is formed.
摘要翻译：提供了一种用于形成含有杂质元素并具有低电阻率的非晶半导体的方法，以及制造具有优异的电特性，高产率的半导体器件的方法。在利用等离子体CVD法形成含有杂质元素的非晶半导体的方法中，在可以获得根据帕邢定律的最小放电起始电压的压力和电极距离处的电极上施加脉冲调制放电初始电压由此形成含有杂质元素并具有低电阻率的非晶半导体。

3. 发明授权

US09139917B2 Transparent conductive porous nanocomposites and methods of fabrication thereof 有权
标题翻译：透明导电多孔纳米复合材料及其制造方法
公开(公告)号：US09139917B2
公开(公告)日：2015-09-22
申请号：US13502348
申请日：2010-10-15
申请人： Paul Gregory O'Brien , Daniel P. Puzzo , Nazir Pyarali Kherani , Geoffrey Alan Ozin , Alongkarn Chutinan , Zheng-Hong Lu , Michael G. Helander
发明人： Paul Gregory O'Brien , Daniel P. Puzzo , Nazir Pyarali Kherani , Geoffrey Alan Ozin , Alongkarn Chutinan , Zheng-Hong Lu , Michael G. Helander
IPC分类号： H01L31/0236 , C25B1/00 , H01L31/054 , C03C17/00 , H01B1/08 , H01L31/0224 , H01L31/0368 , H01L31/0376 , H01L31/072 , H01L31/0725 , H01L51/52 , H01L31/056 , H02S40/44 , H01L33/46
CPC分类号： C25B1/003 , C03C17/006 , C03C2217/425 , H01B1/08 , H01L31/022466 , H01L31/022475 , H01L31/03685 , H01L31/03762 , H01L31/0549 , H01L31/056 , H01L31/072 , H01L31/0725 , H01L33/46 , H01L51/5206 , H01L51/5215 , H01L51/5265 , H01L2251/5369 , H02S40/44 , H05B33/28 , Y02E10/52 , Y02E10/545 , Y02E10/548 , Y02E10/60 , Y02E60/366 , Y10T428/249953
摘要： A nanocomposite material that is both transparent and electrically conductive is provided. The nanocomposite comprises a nanoporous matrix, preferably formed from nanoparticles, that is internally coated with a transparent conductive material to define an internal conductive path within the nanocomposite. The nanocomposite is substantially transparent over a defined spectral range that preferably includes at least a portion of the visible spectrum, and preferably comprises pores with a mean diameter of less than approximately 25 nm. A bilayer may be formed by depositing a layer of a transparent conductive material on top of a nanocomposite layer, or by depositing a second layer of a nanocomposite having different optical properties. The nanocomposites formed using a combination of sequential and/or concurrent deposition techniques are correspondingly discrete and/or continuously varying structures. Multilayer structures, such as photonic crystal reflectors, may be formed by depositing multiple bilayers, and integrated into devices such as tandem solar cells.
摘要翻译：提供了透明和导电的纳米复合材料。纳米复合材料包括优选由纳米颗粒形成的纳米孔基质，其内部涂覆有透明导电材料以在纳米复合材料内限定内部导电路径。纳米复合材料在限定的光谱范围内基本上是透明的，优选地包括可见光谱的至少一部分，并且优选地包括平均直径小于约25nm的孔。可以通过在纳米复合层的顶部上沉积透明导电材料层，或通过沉积具有不同光学性质的纳米复合材料的第二层来形成双层。使用顺序和/或并行沉积技术的组合形成的纳米复合材料相应地是离散的和/或连续变化的结构。多层结构，例如光子晶体反射器，可以通过沉积多个双层并且集成到诸如串联太阳能电池的装置中而形成。

4. 发明授权

US09112088B2 Method for manufacturing a thin-film solar cell using a plasma between parallel electrodes 有权
标题翻译：在平行电极之间使用等离子体制造薄膜太阳能电池的方法
公开(公告)号：US09112088B2
公开(公告)日：2015-08-18
申请号：US13642736
申请日：2011-04-22
申请人： Koichiro Niira , Norikazu Ito , Shinichiro Inaba
发明人： Koichiro Niira , Norikazu Ito , Shinichiro Inaba
IPC分类号： H01L21/00 , H01L31/076 , C23C16/455 , C23C16/46 , C23C16/509 , H01L21/02 , H01L31/0368 , H01L31/0376 , H01L31/0392 , H01L31/18 , H01L31/20
CPC分类号： H01L31/076 , C23C16/45565 , C23C16/4557 , C23C16/46 , C23C16/509 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L31/03685 , H01L31/03762 , H01L31/03921 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Disclosed is a method for manufacturing a thin-film solar cell using plasma between a couple of parallel electrodes. In the method, a base member is placed in a chamber between a first electrode and a second electrode facing each other. A hydrogen gas is heated, and thus heated hydrogen gas and a silicon-based gas are introduced into a space between the first electrode and the second electrode. A ratio of a flow rate of the heated hydrogen gas to that of the silicon-based gas is at least 25 and no more than 58. A plasma is generated between the first electrode and the second electrode by applying high-frequency power to the second electrode while a pressure in the chamber is 1000 Pa or higher, and an optically active layer containing crystalline silicon is deposited on the base material.
摘要翻译：公开了一种使用等离子体在一对平行电极之间制造薄膜太阳能电池的方法。在该方法中，将基底构件放置在彼此面对的第一电极和第二电极之间的室中。氢气被加热，因此加热的氢气和硅基气体被引入到第一电极和第二电极之间的空间中。加热后的氢气与硅系气体的流量的比例为25以上且58以下。通过向第2电极施加高频电力，在第1电极与第2电极之间产生等离子体电极，同时室内的压力为1000Pa以上，并且在基材上沉积含有结晶硅的光学活性层。

5. 发明授权

US09029688B2 Photovoltaic device including flexible substrate or inflexible substrate and method for manufacturing the same 有权
标题翻译：包括柔性基板或不灵活基板的光伏器件及其制造方法
公开(公告)号：US09029688B2
公开(公告)日：2015-05-12
申请号：US13071074
申请日：2011-03-24
申请人： Seung-Yeop Myong
发明人： Seung-Yeop Myong
IPC分类号： H01L31/20 , H01L31/18 , H01L31/0236 , H01L31/0368 , H01L31/076 , H01L31/0384 , H01L31/0392 , H01L31/0352 , H01L31/075
CPC分类号： H01L31/03529 , H01L31/02363 , H01L31/03685 , H01L31/03687 , H01L31/03845 , H01L31/03926 , H01L31/076 , Y02E10/52 , Y02E10/545 , Y02E10/548
摘要： Disclosed is a photovoltaic device. The photovoltaic device includes: a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.
摘要翻译：公开了一种光伏器件。光电器件包括：基板; 放置在基板上的第一电极; 与第一电极相对设置并且入射的第二电极; 第一单元电池被放置在第一电极和第二电极之间，并且包括本征半导体层，其包括使本征半导体层的表面朝向第二电极纹理化的晶体硅晶粒; 以及放置在第一单元电池和第二电极之间的第二单元电池。

6. 发明申请

US20150083203A1 THIN FILM SOLAR CELL 审中-公开
标题翻译：薄膜太阳能电池
公开(公告)号：US20150083203A1
公开(公告)日：2015-03-26
申请号：US14394642
申请日：2013-04-02
申请人： LG ELECTRONICS INC.
发明人： Soohyun Kim , Hongcheol Lee , Jinwon Chung , Sehwon Ahn
IPC分类号： H01L31/0368 , H01L31/077 , H01L31/0376
CPC分类号： H01L31/03685 , H01L31/0376 , H01L31/03762 , H01L31/076 , H01L31/077 , Y02E10/545 , Y02E10/548
摘要： A thin film solar cell includes a substrate, a first electrode and a second electrode positioned on one surface of the substrate, and a photoelectric conversion unit positioned between the first electrode and the second electrode. The photoelectric conversion unit includes a plurality of photoelectric conversion layers each including a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer. At least one of the p-type semiconductor layers of the plurality of photoelectric conversion layers contains microcrystalline silicon (mc-Si) and amorphous silicon oxide (a-SiOx).
摘要翻译：薄膜太阳能电池包括位于基板的一个表面上的基板，第一电极和第二电极以及位于第一电极和第二电极之间的光电转换单元。光电转换单元包括多个光电转换层，每个光电转换层包括p型半导体层，i型半导体层和n型半导体层。多个光电转换层中的至少一个p型半导体层含有微晶硅（mc-Si）和非晶氧化硅（a-SiOx）。

7. 发明授权

US08835253B2 Photoelectric conversion device fabrication method and photoelectric conversion device 有权
标题翻译：光电转换装置的制造方法和光电转换装置
公开(公告)号：US08835253B2
公开(公告)日：2014-09-16
申请号：US13054858
申请日：2009-10-02
申请人： Tatsuyuki Nishimiya , Kazutaka Uda , Kohei Kawazoe , Tomoyoshi Baba , Takashi Ishide
发明人： Tatsuyuki Nishimiya , Kazutaka Uda , Kohei Kawazoe , Tomoyoshi Baba , Takashi Ishide
IPC分类号： H01L21/00 , H01L31/18 , H01L31/077 , H01L31/0392 , H01L31/20
CPC分类号： H01L31/1804 , H01L31/03921 , H01L31/077 , H01L31/182 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： Provided is a photoelectric conversion device fabrication method in which current leakage from an intermediate contact layer via an intermediate-contact-layer separating groove is prevented as much as possible. Included are a step of film-forming a top layer having amorphous silicon as a main component; a step of film-forming, on the top layer, an intermediate contact layer electrically and optically connected thereto; a step of separating the intermediate contact layer by removing the intermediate contact layer by irradiating it with a pulsed laser, forming an intermediate-contact-layer separating groove that reaches the top layer; and a step of film-forming, on the intermediate contact layer and inside the intermediate-contact-layer separating groove, a bottom layer electrically and optically connected thereto and having microcrystalline silicon as a main component. A pulsed laser having a pulse width of 10 ps to 750 ps, inclusive, is used as the pulsed laser for separating the intermediate contact layer.
摘要翻译：提供了尽可能地防止从中间接触层经由中间接触层分离槽的电流泄漏的光电转换器件制造方法。包括以非晶硅为主要成分的顶层成膜的步骤; 在顶层上形成与其电连接和光学连接的中间接触层的成膜步骤; 通过用脉冲激光照射中间接触层来分离中间接触层的步骤，形成到达顶层的中间接触层分隔槽; 以及在中间接触层和中间接触层分离槽内部成膜的步骤，其电层和光学连接到底层，并以微晶硅为主要成分。使用脉冲宽度为10ps至750ps（包括端值）的脉冲激光器作为用于分离中间接触层的脉冲激光器。

8. 发明授权

US08735715B2 Tandem photovoltaic device and method for manufacturing the same 有权
标题翻译：串联光伏器件及其制造方法
公开(公告)号：US08735715B2
公开(公告)日：2014-05-27
申请号：US12987142
申请日：2011-01-09
申请人： Seung-Yeop Myong
发明人： Seung-Yeop Myong
IPC分类号： H01L31/18
CPC分类号： H01L31/0725 , H01L31/0236 , H01L31/03685 , H01L31/03762 , H01L31/075 , H01L31/1804 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Disclosed is a photovoltaic device that comprises: a first electrode including a transparent conductive oxide layer; a first unit cell being placed on the first electrode; a second unit cell being placed on the first unit cell; and a second electrode being placed on the second unit cell, wherein the intrinsic semiconductor layer of the first unit cell includes hydrogenated amorphous silicon or hydrogenated amorphous silicon based material, wherein an intrinsic semiconductor layer of the second unit cell includes hydrogenated microcrystalline silicon or hydrogenated microcrystalline silicon based material, and wherein a ratio of a root mean square roughness to an average pitch of a texturing structure formed on the surface of the first electrode is equal to or more than 0.05 and equal to or less than 0.13.
摘要翻译：公开了一种光电器件，其包括：包括透明导电氧化物层的第一电极; 第一单元电池被放置在第一电极上; 放置在第一单电池上的第二单电池; 并且第二电极被放置在第二单元电池上，其中第一单元电池的本征半导体层包括氢化非晶硅或氢化非晶硅基材料，其中第二单元电池的本征半导体层包括氢化微晶硅或氢化微晶硅硅基材料，并且其中形成在第一电极的表面上的纹理结构的均方根粗糙度与平均间距的比等于或大于0.05并且等于或小于0.13。

9. 发明申请

US20140130869A1 Inorganic Nanocrystal Solar Cells 审中-公开
标题翻译：无机纳米晶太阳能电池
公开(公告)号：US20140130869A1
公开(公告)日：2014-05-15
申请号：US14051226
申请日：2013-10-10
申请人： Edward E. Foos , Woojun Yoon , Joseph G. Tischler , Troy K. Townsend
发明人： Edward E. Foos , Woojun Yoon , Joseph G. Tischler , Troy K. Townsend
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/0296 , H01L31/03685 , H01L31/073 , H01L31/1836 , Y02E10/543 , Y02E10/545 , Y02E10/548
摘要： An inorganic nanocrystal solar cell comprising a substrate, a layer of metal, a layer of CdTe, a layer of CdSe, and a layer of transparent conductor. An inorganic nanocrystal solar cell comprising a transparent conductive substrate, a layer of CdSe, a layer of CdTe, and a Au contact. A method of spray deposition for inorganic nanocrystal solar cells comprising subjecting a first solution of CdTe or CdSe nanocrystals to ligand exchange with a small coordinating molecule, diluting the first solution in solvent to form a second solution, applying the second solution to a substrate, drying the substrate, dipping the substrate in a solution in MeOH of a compound that promotes sintering, washing the substrate with iPrOH, drying the substrate with N2, and heating and forming a film on the substrate.
摘要翻译：一种无机纳米晶体太阳能电池，包括基底，金属层，CdTe层，CdSe层和透明导体层。一种无机纳米晶体太阳能电池，包括透明导电衬底，CdSe层，CdTe层和Au接触层。一种用于无机纳米晶体太阳能电池的喷雾沉积方法，包括将CdTe或CdSe纳米晶体的第一溶液与小配位分子进行配体交换，稀释溶剂中的第一溶液以形成第二溶液，将第二溶液施加到基底上，干燥将基材浸入促进烧结的化合物的MeOH溶液中，用iPrOH洗涤基材，用N 2干燥基材，并在基材上加热和形成膜。

10. 发明申请

US20140102521A1 THIN FILM SILICON SOLAR CELL 审中-公开
标题翻译：薄膜硅太阳能电池
公开(公告)号：US20140102521A1
公开(公告)日：2014-04-17
申请号：US13842059
申请日：2013-03-15
申请人： Electronics and Telecommunications Research Institute
发明人： JungWook LIM , Sun Jin YUN , Seong Hyun LEE , Da Jung LEE
IPC分类号： H01L31/0392 , H01L31/076 , H01L31/0376 , H01L31/075 , H01L31/0368
CPC分类号： H01L31/0392 , H01L31/03685 , H01L31/03762 , H01L31/03921 , H01L31/0684 , H01L31/075 , H01L31/076 , Y02E10/545 , Y02E10/547 , Y02E10/548
摘要： Provided is a thin film silicon solar cell including a first optical absorption layer, a first transparent electrode disposed in a surface of the first optical absorption layer, a first transparent substrate covering the first transparent electrode, a second transparent electrode disposed another surface of the first optical absorption layer, and a second transparent substrate covering the second transparent electrode, wherein the first optical absorption layer has a thickness of about 500 Å to about 2000 Å.
摘要翻译：提供一种薄膜硅太阳能电池，其包括第一光吸收层，设置在第一光吸收层的表面中的第一透明电极，覆盖第一透明电极的第一透明基板，设置第一透明电极的另一表面的第二透明电极光吸收层和覆盖第二透明电极的第二透明基板，其中第一光吸收层具有大约至大约的厚度。

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