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1. 发明申请

US20180374984A1 METHODS OF FORMING INTERDIGITATED BACK CONTACT LAYERS 审中-公开
公开(公告)号：US20180374984A1
公开(公告)日：2018-12-27
申请号：US16014695
申请日：2018-06-21
申请人： Alliance for Sustainable Energy, LLC
发明人： William Michael Nemeth , Pauls Stradins , Vincenzo Anthony LaSalvia , Matthew Robert Page , David Levi Young
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/068 , H01L31/077
CPC分类号： H01L31/182 , H01L31/022441 , H01L31/022458 , H01L31/0682 , H01L31/0745 , H01L31/077 , H01L31/1804 , H01L31/1872
摘要： Methods of forming interdigitated back contact (IBC) layers are provided. According to an aspect of the invention, a first layer having alternating regions of n-type amorphous hydrogenated silicon and p-type amorphous hydrogenated silicon is formed on a second layer of intrinsic amorphous hydrogenated silicon. The first layer and the second layer are then annealed, such that dopants from the first layer diffuse into the second layer, and the first layer and the second layer crystallize into polysilicon.

2. 发明授权

US10043935B2 Interdigitated back contact heterojunction photovoltaic device 有权
公开(公告)号：US10043935B2
公开(公告)日：2018-08-07
申请号：US14946495
申请日：2015-11-19
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Tze-Chiang Chen , Bahman Hekmatshoartabari , Devendra K. Sadana , Davood Shahrjerdi
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/068 , H01L31/0747 , H01L31/18 , H01L31/077
CPC分类号： H01L31/077 , H01L31/02167 , H01L31/022441 , H01L31/022458 , H01L31/0682 , H01L31/0747 , H01L31/182 , Y02E10/50
摘要： A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having a same dopant conductivity as the substrate. Methods are also disclosed.

3. 发明申请

US20180166603A1 METHOD OF FABRICATING THIN FILM PHOTOVOLTAIC DEVICES 审中-公开
公开(公告)号：US20180166603A1
公开(公告)日：2018-06-14
申请号：US15833795
申请日：2017-12-06
申请人： Ramesh Kakkad
发明人： Ramesh Kakkad
IPC分类号： H01L31/18 , H01L31/077 , H01L31/0288 , H01L31/0368
CPC分类号： H01L31/1872 , H01L31/022425 , H01L31/0288 , H01L31/03682 , H01L31/056 , H01L31/07 , H01L31/077 , H01L31/182 , Y02E10/50 , Y02P70/521
摘要： Thin film silicon photovoltaic cell arrangements that include a heavily doped p-type polycrystalline silicon layer spaced-apart from the substrate and bottom electrode in order to reduce grain defects by initiating crystallization at a location far from the substrate. This is accomplished by forming a device structure incorporating such amorphous silicon films on a substrate and annealing at elevated temperature to crystallize the a-Si films such that the crystallization of the a-Si starts within the spaced-apart heavily doped p-type layer and proceeds through the intrinsic silicon layer.

4. 发明授权

US09911892B2 Method for the low-temperature production of radial-junction semiconductor nanostructures, radial junction device, and solar cell including radial-junction nanostructures 有权
公开(公告)号：US09911892B2
公开(公告)日：2018-03-06
申请号：US14370598
申请日：2013-01-03
申请人： Linwei Yu , Pere Roca I Cabarrocas
发明人： Linwei Yu , Pere Roca I Cabarrocas
IPC分类号： H01L31/042 , H01L31/075 , B82Y40/00 , H01L21/00 , H01L21/20 , H01L31/18 , B82Y10/00 , H01L21/02 , H01L31/0352 , H01L29/06 , H01L29/16 , H01L29/161 , H01L29/24 , H01L31/077 , H01L29/167 , B82Y30/00
CPC分类号： H01L31/182 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02422 , H01L21/02472 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02603 , H01L21/0262 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L29/0676 , H01L29/068 , H01L29/16 , H01L29/161 , H01L29/167 , H01L29/24 , H01L31/035227 , H01L31/035272 , H01L31/035281 , H01L31/075 , H01L31/077 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method for the low-temperature production of radial electronic junction semiconductor nanostructures on a substrate, includes: a) forming on the substrate, metal aggregates capable of electronically doping a first semiconductor material; b) growing, in the vapor phase, doped semiconductor nanowires in the presence of one or more non-dopant precursor gases of the first semiconductor material, the substrate being heated to a temperature at which the metal aggregates are in the liquid phase, the growth of the doped semiconductor nanowires in the vapor phase being catalyzed by the metal aggregates; c) rendering the residual metal aggregates inactive; and d) the chemical vapor deposition, in the presence of one or more precursor gases and a dopant gas, of at least one thin film of a second semiconductor material so as to form at least one radial electronic junction nanostructure between the nanowire and the at least one doped thin film.

5. 发明授权

US09911888B2 Photovoltaic device having layer with varying crystallinity 有权
公开(公告)号：US09911888B2
公开(公告)日：2018-03-06
申请号：US14976798
申请日：2015-12-21
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Tze-Chiang Chen , Augustin J. Hong , Jeehwan Kim , Devendra K. Sadana
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00 , H01L31/077 , C23C16/50 , H01L31/20 , H01L21/02 , C23C16/02 , H01L31/0216 , H01L31/0368 , H01L31/0376 , H01L31/0392 , C23C16/455 , C23C16/515 , H01L31/0224 , H01L31/065 , H01L31/18 , H01L31/056
CPC分类号： H01L31/077 , C23C16/0272 , C23C16/45523 , C23C16/45557 , C23C16/50 , C23C16/515 , H01L21/02532 , H01L21/0262 , H01L31/02167 , H01L31/022466 , H01L31/022475 , H01L31/022483 , H01L31/03682 , H01L31/03687 , H01L31/03762 , H01L31/03921 , H01L31/056 , H01L31/065 , H01L31/1816 , H01L31/20 , Y02E10/52 , Y02E10/546 , Y02E10/548
摘要： A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.

6. 发明授权

US09761749B2 Photoelectric conversion device 有权
公开(公告)号：US09761749B2
公开(公告)日：2017-09-12
申请号：US14627298
申请日：2015-02-20
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Takashi Hirose , Naoto Kusumoto
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/028 , H01L31/0216 , H01L31/068 , H01L31/0747 , H01L31/20 , H01L31/077
CPC分类号： H01L31/068 , H01L31/022425 , H01L31/028 , H01L31/0747 , H01L31/077 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A photoelectric conversion device with improved electric characteristics is provided. The photoelectric conversion device has a structure in which a window layer is formed by a stack of a first silicon semiconductor layer and a second silicon semiconductor layer, and the second silicon semiconductor layer has high carrier concentration than the first silicon semiconductor layer and has an opening. Light irradiation is performed on the first silicon semiconductor layer through the opening without passing through the second silicon semiconductor layer; thus, light absorption loss in the window layer can be reduced.

7. 发明授权

US09666742B2 Solar cell structures having III-V base layers 有权
公开(公告)号：US09666742B2
公开(公告)日：2017-05-30
申请号：US14982991
申请日：2015-12-29
申请人： International Business Machines Corporation
发明人： Stephen W. Bedell , Bahman Hekmatshoartabari , Devendra K. Sadana , Davood Shahrjerdi
IPC分类号： H01L31/00 , H01L21/00 , H01L31/075 , H01L31/074 , H01L31/0304 , H01L31/20 , H01L31/036 , H01L31/077 , H01L31/0216 , H01L31/0224
CPC分类号： H01L31/074 , H01L31/02167 , H01L31/022466 , H01L31/0304 , H01L31/036 , H01L31/077 , H01L31/20 , Y02E10/50 , Y02E10/544 , Y02P70/521
摘要： Solar cell structures that have improved carrier collection efficiencies at a heterointerface are provided by low temperature epitaxial growth of silicon on a III-V base. Additionally, a solar cell structure having improved open circuit voltage includes a shallow junction III-V emitter formed by epitaxy or diffusion followed by the epitaxy of SixGe1-x passivated by amorphous SiyGe1-y:H.

8. 发明授权

US09520517B2 Solar cell 有权
标题翻译：太阳能电池
公开(公告)号：US09520517B2
公开(公告)日：2016-12-13
申请号：US14542206
申请日：2014-11-14
申请人： LG Electronics Inc.
发明人： Hyunjin Yang , Heonmin Lee , Junghoon Choi , Kwangsun Ji
IPC分类号： H01L31/0216 , H01L31/0368 , H01L31/068 , H01L31/0747 , H01L31/0224 , H01L31/077
CPC分类号： H01L31/0368 , H01L31/02167 , H01L31/022466 , H01L31/03682 , H01L31/0682 , H01L31/0747 , H01L31/077 , Y02E10/546 , Y02E10/547
摘要： A solar cell including a non-amorphous semiconductor substrate of a first conductive type; at least a first semiconductor layer on the non-amorphous semiconductor substrate, the first semiconductor layer including a portion that is amorphous and a plurality of portions having crystal lumps, so that the plurality of portions having the crystal lumps are distributed in the first semiconductor layer; a first electrode on the semiconductor substrate; and a second electrode on the semiconductor substrate.
摘要翻译：一种太阳能电池，包括第一导电类型的非非晶半导体衬底; 在所述非非晶半导体基板上的至少第一半导体层，所述第一半导体层包括非晶体的部分和具有晶体块的多个部分，使得具有所述晶体块的所述多个部分分布在所述第一半导体层 ; 半导体衬底上的第一电极; 以及半导体衬底上的第二电极。

9. 发明申请

US20160359072A1 HYBRID CZTSSe PHOTOVOLTAIC DEVICE 审中-公开
公开(公告)号：US20160359072A1
公开(公告)日：2016-12-08
申请号：US15234458
申请日：2016-08-11
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Tayfun Gokmen , Oki Gunawan , Richard A. Haight , Jeehwan Kim , David B. Mitzi , Mark T. Winkler
IPC分类号： H01L31/075 , H01L31/0328 , H01L31/077
CPC分类号： H01L31/075 , H01L31/0322 , H01L31/0324 , H01L31/0326 , H01L31/0328 , H01L31/077 , H01L31/18 , Y02E10/541
摘要： A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.

10. 发明授权

US09450123B2 Thermo-tunneling design for quantum well photovoltaic converter 有权
标题翻译：量子阱光伏转换器的热隧道设计
公开(公告)号：US09450123B2
公开(公告)日：2016-09-20
申请号：US13740726
申请日：2013-01-14
申请人： The University of Houston System
发明人： Alexandre Freundlich , Andenet Alemu
IPC分类号： H01L31/00 , H01L31/0352 , H01L31/0304 , H01L31/077 , B82Y20/00
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/03048 , H01L31/077 , Y02E10/544 , Y10S977/755
摘要： A design of a quantum well region that allows faster and more efficient carrier collection in quantum well solar cells. It is shown that for a quantum well material system displaying a negligible valence band offset, the conduction band confinement energies and barrier thicknesses can be designed to favor a sequential thermionic promotion and resonant tunneling of electrons to the conduction band continuum resulting in faster carrier collection rates than for a conventional design. An evaluation of the proposed design in the context of devices incorporating GaAs/GaAsN quantum wells shows a collection of all photo-generated carriers within several to tenths of ps (10−12 s) from deep quantum wells rather than several ns, as it is the case for conventional designs. The incorporation of the proposed design in single and multijunction solar cells is evaluated with efficiency enhancements.
摘要翻译：量子阱区域的设计，允许在量子阱太阳能电池中更快更有效的载流子收集。显示对于显示可忽略的价带偏移的量子阱材料系统，可以设计导带限制能量和阻挡层厚度，以有利于电子顺序的热离子促进和共振隧穿隧道，从而导致更快的载流子收集速率而不是传统的设计。在采用GaAs / GaAsN量子阱的器件的背景下对所提出的设计的评估显示了从深量子阱而不是几个ns的几十到十分之一秒（10-12秒）内的所有光生载流子的集合，因为它是常规设计的情况。提出的设计在单结和多结太阳能电池中的并入通过效率增强进行评估。

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