专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明申请

US20170200845A1 Structures for Increased Current Generation and Collection in Solar Cells with Low Absorptance and/or Low Diffusion Length 有权
公开(公告)号：US20170200845A1
公开(公告)日：2017-07-13
申请号：US14993800
申请日：2016-01-12
申请人： The Boeing Company
发明人： Richard R. King , Moran Haddad , Philip T. Chiu , Xingquan Liu , Christopher M. Fetzer
IPC分类号： H01L31/056 , H01L31/0304 , H01L31/0687
CPC分类号： H01L31/056 , H01L31/03042 , H01L31/03048 , H01L31/0687 , H01L31/0693 , Y02E10/52 , Y02E10/544
摘要： The present disclosure generally relates to a solar cell device that a first Bragg reflector disposed below a first solar cell and a second Bragg reflector disposed below the first Bragg reflector, wherein the first solar cell comprises a dilute nitride composition and has a first bandgap, wherein the first Bragg reflector is operable to reflect a first range of radiation wavelengths back into the first solar cell and the second Bragg reflector is operable to reflect a third range of wavelengths back into the first solar cell, and the first Bragg reflector and the second Bragg reflector are operable to cool the solar cell device by reflecting a second range of radiation wavelengths that are outside the photogeneration wavelength range of the first solar cell or that are weakly absorbed by the first solar cell.

62. 发明授权

US09691928B2 Inverted metamorphic multijunction solar cells with doped alpha layer 有权
公开(公告)号：US09691928B2
公开(公告)日：2017-06-27
申请号：US14044147
申请日：2013-10-02
申请人： SolAero Technologies Corp.
发明人： Benjamin Cho , Yong Lin , Pravin Patel , Mark A. Stan , Arthur Cornfeld , Daniel McGlynn , Fred Newman
IPC分类号： H01L21/00 , H01L31/0687 , H01L31/18 , H01L31/078
CPC分类号： H01L31/06875 , H01L31/078 , H01L31/184 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A method of forming a multijunction solar cell comprising at least an upper subcell, a middle subcell, and a lower subcell, the method including forming a first alpha layer over said middle solar subcell using a surfactant and dopant including selenium, the first alpha layer configured to prevent threading dislocations from propagating; forming a metamorphic grading interlayer over and directly adjacent to said first alpha layer; forming a second alpha layer using a surfactant and dopant including selenium over and directly adjacent to said grading interlayer to prevent threading dislocations from propagating; and forming a lower solar subcell over said grading interlayer such that said lower solar subcell is lattice mismatched with respect to said middle solar subcell.

63. 发明申请

US20170077340A1 COMPOUND-SEMICONDUCTOR PHOTOVOLTAIC CELL AND MANUFACTURING METHOD OF COMPOUND-SEMICONDUCTOR PHOTOVOLTAIC CELL 审中-公开
标题翻译：化合物 - 半导体光电池和复合半导体光伏电池的制造方法
公开(公告)号：US20170077340A1
公开(公告)日：2017-03-16
申请号：US15309067
申请日：2015-07-08
申请人： Shunichi SATO
发明人： Shunichi SATO
IPC分类号： H01L31/0687 , H01L31/0693
CPC分类号： H01L31/0687 , H01L31/03046 , H01L31/06875 , H01L31/0693 , H01L31/1892 , Y02E10/544 , Y02P70/521
摘要： A compound-semiconductor photovoltaic cell includes a first photoelectric conversion cell made of a first compound-semiconductor material which lattice matches with GaAs or Ge; a first tunnel junction layer arranged on a deep side farther than the first photoelectric conversion cell in a light incident direction, and including a first p-type (Alx1Ga1-x1)y1In1-y1As (0≦x1
摘要翻译：化合物半导体光伏电池包括与GaAs或Ge晶格匹配的第一化合物半导体材料制成的第一光电转换单元; 第一隧道结层，沿着光入射方向布置在比第一光电转换单元更远的深侧，并且包括第一p型（Al x Ga 1-x 1）y 1 In 1-y 1 As（0≤x1 <1,0

64. 发明申请

US20170077327A1 PHOTOELECTRIC CONVERSION ELEMENT, SOLAR CELL, SOLAR CELL MODULE, AND SOLAR POWER GENERATING SYSTEM 审中-公开
标题翻译：光电转换元件，太阳能电池，太阳能电池模块和太阳能发电系统
公开(公告)号：US20170077327A1
公开(公告)日：2017-03-16
申请号：US15254327
申请日：2016-09-01
申请人： Kabushiki Kaisha Toshiba
发明人： Hiroki HIRAGA , Naoyuki NAKAGAWA , Soichiro SHIBASAKI , Hitomi SAITO , Miyuki SHIOKAWA , Mutsuki YAMAZAKI , Kazushige YAMAMOTO
IPC分类号： H01L31/032 , H01L31/046 , H01L31/0687 , H01L31/0224
CPC分类号： H01L31/0323 , H01L31/022425 , H01L31/046 , H01L31/0687 , Y02E10/541 , Y02E10/544
摘要： A photoelectric conversion element of an embodiment includes a substrate, a transparent first electrode on the substrate, a second electrode, and a light absorbing layer of a homo-junction type interposed between the first electrode and the second electrode. The light absorbing layer includes a p-type region on the second electrode side and an n-type region on the first electrode side. The n-type region has an n-type dopant. The photoelectric conversion element has a boundary surface between the light absorbing layer on the n-type region side and the first electrode.
摘要翻译：实施例的光电转换元件包括衬底，衬底上的透明第一电极，第二电极和插入在第一电极和第二电极之间的均匀接合型光吸收层。光吸收层包括第二电极侧的p型区域和第一电极侧的n型区域。 n型区域具有n型掺杂剂。光电转换元件具有在n型区域侧的光吸收层与第一电极之间的边界面。

65. 发明申请

US20170076875A1 CdZnO/Si Tandem Cell for Photoelectrochemical Water Dissociation 审中-公开
标题翻译：用于光电化学水分解的CdZnO / Si串联电池
公开(公告)号：US20170076875A1
公开(公告)日：2017-03-16
申请号：US14851630
申请日：2015-09-11
申请人： Wladyslaw Walukiewicz , Douglas Detert , Kin Man Yu , Mimoza Ristova
发明人： Wladyslaw Walukiewicz , Douglas Detert , Kin Man Yu , Mimoza Ristova
IPC分类号： H01G9/20 , C25B1/00 , C25B1/04 , H01L31/0687 , H01L31/028
CPC分类号： C25B1/003 , C01B3/042 , C25B1/04 , H01G9/2027 , H01G9/2045 , H01L31/022466 , Y02E60/364 , Y02E60/366 , Y02E70/10 , Y02P20/135
摘要： Here we present an apparatus comprising a photoelectrochemical cell connected a photovoltaic device, comprised of a layer with a thick n-type absorber and a layer comprising a thin p-type hole emitter. The photoelectrochemical cell has binary, metal-oxide semiconductors with wide bandgaps comprising high electron affinities relative to other semiconductor materials allowing for n-type doping.
摘要翻译：在这里，我们提供一种装置，其包括连接有光电器件的光电化学电池，该光电器件由具有厚n型吸收体的层和包含薄p型空穴发射体的层组成。光电化学电池具有相对于允许n型掺杂的其它半导体材料具有包括高电子亲和力的宽带隙的二元金属氧化物半导体。

66. 发明申请

US20170018675A1 MULTI-JUNCTION PHOTOVOLTAIC MICRO-CELL ARCHITECTURES FOR ENERGY HARVESTING AND/OR LASER POWER CONVERSION 审中-公开
标题翻译：用于能量采集和/或激光功率转换的多功能光伏微型结构
公开(公告)号：US20170018675A1
公开(公告)日：2017-01-19
申请号：US15280484
申请日：2016-09-29
申请人： Semprius, Inc.
发明人： Matthew Meitl , Scott Burroughs , Brent Fisher , Joseph Carr
IPC分类号： H01L31/16 , H01L31/0304 , H01L31/02 , H01L31/0687 , H01L31/043
CPC分类号： H01L31/0687 , H01L27/14 , H01L31/0725 , H01L31/0735 , Y02E10/544 , Y02P70/521
摘要： An optical power converter device includes a light source configured to emit monochromatic light, and a multi-junction photovoltaic cell including respective photovoltaic cell layers having different bandgaps and/or thicknesses. The respective photovoltaic cell layers are electrically connected to collectively provide an output voltage and are vertically stacked relative to a surface of the multi-junction photovoltaic cell that is arranged for illumination by the monochromatic light from the light source. Responsive to the illumination of the surface by the monochromatic light from the light source, the respective photovoltaic cell layers are configured to generate respective output photocurrents that are substantially equal. Related devices and methods of operation are also discussed.
摘要翻译：光功率转换器装置包括被配置为发射单色光的光源和包括具有不同带隙和/或厚度的各自的光伏电池层的多结光伏电池。相应的光伏电池层电连接以共同提供输出电压，并且相对于被布置成由来自光源的单色光照明的多结光伏电池的表面垂直堆叠。响应于通过来自光源的单色光对表面的照明，各个光伏电池层被配置为产生基本相等的各自的输出光电流。还讨论了相关设备和操作方法。

67. 发明申请

US20160380142A1 MULTI SOLAR CELL 审中-公开
标题翻译：多个太阳能电池
公开(公告)号：US20160380142A1
公开(公告)日：2016-12-29
申请号：US15263818
申请日：2016-09-13
申请人： AZUR SPACE Solar Power GmbH
发明人： Wolfgang GUTER , Matthias MEUSEL , Frank DIMROTH , Lars EBEL , Rene KELLENBENZ
IPC分类号： H01L31/0687 , H01L31/0304 , H01L31/054 , H01L31/028
摘要： A multi-junction solar cell having a first subcell made of an InGaAs compound. The first subcell has a first lattice constant and A second subcell has a second lattice constant. The first lattice constant is at least 0.008 Å greater than the second lattice constant. A metamorphic buffer is formed between the first subcell and the second subcell and has a sequence of at least three layers and a lattice constant increases from layer to layer in the sequence in the direction toward the first subcell. The lattice constants of the layers of the buffer are greater than the second lattice constant, and a layer of the metamorphic buffer has a third lattice constant that is greater than the first lattice constant. A number N of compensation layers for compensating the residual stress of the metamorphic buffer is formed between the metamorphic buffer and the first subcell.
摘要翻译：一种具有由InGaAs化合物制成的第一子电池的多结太阳能电池。第一子电池具有第一晶格常数，第二子电池具有第二晶格常数。第一晶格常数比第二晶格常数大至少0.008埃。在第一子电池和第二子电池之间形成变质缓冲器，并且具有至少三层的序列，并且在朝向第一子电池的方向上的序列中晶格常数从层间增加。缓冲器的层的晶格常数大于第二晶格常数，并且变质缓冲层的层具有大于第一晶格常数的第三晶格常数。在变质缓冲器和第一子电池之间形成N个用于补偿变质缓冲器的残余应力的补偿层。

68. 发明授权

US09508881B2 Transparent contacts for stacked compound photovoltaic cells 有权
标题翻译：层叠复合光伏电池的透明触点
公开(公告)号：US09508881B2
公开(公告)日：2016-11-29
申请号：US13649238
申请日：2012-10-11
申请人： Sandia Corporation
发明人： Anna Tauke-Pedretti , Jeffrey Cederberg , Gregory N. Nielson , Murat Okandan , Jose Luis Cruz-Campa
IPC分类号： H01L31/043 , H01L31/0687 , H01L31/0693 , H01L31/18
CPC分类号： H01L31/043 , H01L31/0687 , H01L31/0693 , H01L31/1844 , Y02E10/544
摘要： A microsystems-enabled multi-junction photovoltaic (MEM-PV) cell includes a first photovoltaic cell having a first junction, the first photovoltaic cell including a first semiconductor material employed to form the first junction, the first semiconductor material having a first bandgap. The MEM-PV cell also includes a second photovoltaic cell comprising a second junction. The second photovoltaic cell comprises a second semiconductor material employed to form the second junction, the second semiconductor material having a second bandgap that is less than the first bandgap, the second photovoltaic cell further comprising a first contact layer disposed between the first junction of the first photovoltaic cell and the second junction of the second photovoltaic cell, the first contact layer composed of a third semiconductor material having a third bandgap, the third bandgap being greater than or equal to the first bandgap.
摘要翻译：具有微系统的多结光伏（MEM-PV）电池包括具有第一结的第一光伏电池，第一光伏电池包括用于形成第一结的第一半导体材料，第一半导体材料具有第一带隙。 MEM-PV电池还包括包含第二结的第二光伏电池。所述第二光伏电池包括用于形成所述第二结的第二半导体材料，所述第二半导体材料具有小于所述第一带隙的第二带隙，所述第二光伏电池还包括第一接触层，所述第一接触层设置在所述第一光电池和第二光伏电池的第二接头，第一接触层由具有第三带隙的第三半导体材料组成，第三带隙大于或等于第一带隙。

69. 发明申请

US20160315578A1 Thermophotovoltaic Materials, Methods of Deposition, and Devices 审中-公开
标题翻译：热光伏材料，沉积方法和器件
公开(公告)号：US20160315578A1
公开(公告)日：2016-10-27
申请号：US15101327
申请日：2014-12-02
申请人： THE BOARD OF REGENTS OF THE UNIVERSITY OF OKLAHOMA
发明人： Patrick John McCann
IPC分类号： H02S10/30 , H01L31/18 , H01L31/0687 , H01L31/032 , H01L31/0216
摘要： Novel materials, material deposition methods, and devices used to generate electrical power from thermal radiators based on thermophotovoltatic (TPV) operating principles using group IV-VI alloys and materials are disclosed. A semiconductor structure comprising (N) stacked junctions, each junction formed of a IV-VI semiconductor alloy and each of said N junctions having a bandgap, where N is an integer and N>1 is disclosed. The semiconductor structure is configured to capture electromagnetic radiation having wavelengths from about 1 μm to about 7 μm. TPV devices comprising the novel semiconductor structure and methods of making the novel structures and devices are also disclosed.
摘要翻译：公开了基于使用IV-VI族合金和材料的热光伏（TPV）工作原理从热辐射器产生电力的新型材料，材料沉积方法和装置。一种包括（N）层叠结的半导体结构，由IV-VI族半导体合金形成的每个结以及具有带隙的所述N个结，其中N为整数，N> 1。半导体结构被配置为捕获具有约1μm至约7μm的波长的电磁辐射。还公开了包括新型半导体结构的TPV器件和制造新型结构和器件的方法。

70. 发明授权

US09450138B2 Photovoltaic cell and photovoltaic cell manufacturing method 有权
标题翻译：光伏电池和光伏电池的制造方法
公开(公告)号：US09450138B2
公开(公告)日：2016-09-20
申请号：US14443480
申请日：2013-11-25
申请人： Shunichi Sato , Nobuhiko Nishiyama
发明人： Shunichi Sato , Nobuhiko Nishiyama
IPC分类号： H01L21/00 , H01L31/18 , H01L31/0687 , H01L31/0352 , H01L31/043
CPC分类号： H01L31/1836 , H01L31/035236 , H01L31/043 , H01L31/0687 , H01L31/06875 , H01L31/1804 , H01L31/1852 , H01L31/1892 , Y02E10/544 , Y02P70/521
摘要： A photovoltaic cell manufacturing method includes depositing a first buffer layer for performing lattice relaxation on a first silicon substrate; depositing a first photoelectric conversion cell on the first buffer layer, the first photoelectric conversion cell being formed with a compound semiconductor including a pn junction, and the first photoelectric conversion cell having a lattice constant that is higher than that of silicon; connecting a support substrate to the first photoelectric conversion cell to form a first layered body; and removing the first buffer layer and the first silicon substrate from the first layered body.
摘要翻译：光电池制造方法包括：在第一硅衬底上沉积用于进行晶格弛豫的第一缓冲层; 在第一缓冲层上沉积第一光电转换单元，第一光电转换单元由具有pn结的化合物半导体形成，第一光电转换单元的晶格常数高于硅的晶格常数; 将支撑基板连接到第一光电转换单元以形成第一层叠体; 以及从第一层叠体移除第一缓冲层和第一硅衬底。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式