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1. 发明授权

US10381505B2 Inverted metamorphic multijunction solar cells including metamorphic layers 有权
公开(公告)号：US10381505B2
公开(公告)日：2019-08-13
申请号：US15214315
申请日：2016-07-19
申请人： SolAero Technologies Corp.
发明人： Pravin Patel , Arthur Cornfeld , John Spann , Mark A. Stan , Benjamin Cho , Paul R. Sharps , Daniel J. Aiken
IPC分类号： H01L31/0725 , H01L31/0735 , H01L31/18 , H01L31/0687 , H01L31/0304 , H01L31/078
摘要： A multijunction solar cell includes an upper first solar subcell having a first band gap, a second solar subcell having a second band gap smaller than the first band gap, and a first graded interlayer composed of (InxGa1-x)yAl1-yAs adjacent to the second solar subcell. The first graded interlayer has a third band gap greater than the second band gap subject to the constraints of having the in-plane lattice parameter greater or equal to that of the second subcell and less than or equal to that of the third subcell, wherein 0

2. 发明授权

US10008623B2 Inverted metamorphic multijunction solar cells having a permanent supporting substrate 有权
公开(公告)号：US10008623B2
公开(公告)日：2018-06-26
申请号：US14674627
申请日：2015-03-31
申请人： SolAero Technologies Corp.
发明人： Arthur Cornfeld , Jeff Steinfeldt
IPC分类号： H01L31/00 , H01L31/0725 , H01L31/18 , H01L31/0687 , H01L31/0304 , H01L31/048
CPC分类号： H01L31/0725 , H01L31/0304 , H01L31/03046 , H01L31/03048 , H01L31/048 , H01L31/06875 , H01L31/184 , H01L31/1844 , H01L31/1848 , H01L31/1856 , H01L31/1892 , Y02E10/544 , Y02P70/521
摘要： The present disclosure provides a method of manufacturing a solar cell that includes providing a semiconductor growth substrate; depositing on said growth substrate a sequence of layers of semiconductor material forming a solar cell; applying a metal contact layer over said sequence of layers; affixing the adhesive polyimide surface of a permanent supporting substrate directly over said metal contact layer and permanently bonding it thereto by a thermocompressive technique; and removing the semiconductor growth substrate.

3. 发明申请

US20170243997A1 Four Junction Inverted Metamorphic Multijunction Solar Cell with Two Metamorphic Layers 审中-公开
公开(公告)号：US20170243997A1
公开(公告)日：2017-08-24
申请号：US15589098
申请日：2017-05-08
申请人： SolAero Technologies Corp.
发明人： Arthur Cornfeld , Benjamin Cho
IPC分类号： H01L31/0687 , H01L31/18 , H01L31/078
CPC分类号： H01L31/06875 , H01L31/078 , H01L31/1844 , H01L31/1892 , Y02E10/544 , Y02P70/521
摘要： A multijunction solar cell including an upper first solar subcell having a first band gap; a second solar subcell adjacent to the first solar subcell and having a second band gap smaller than the first band gap; a first graded interlayer adjacent to the second solar subcell; the first graded interlayer having a third band gap greater than the second band gap; and a third solar subcell adjacent to the first graded interlayer, the third subcell having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell. A second graded interlayer is provided adjacent to the third solar subcell; the second graded interlayer having a fifth band gap greater than the fourth band gap; and a lower fourth solar subcell is provided adjacent to the second graded interlayer, the lower fourth subcell having a sixth band gap smaller than the fourth band gap such that the fourth subcell is lattice mismatched with respect to the third subcell.

4. 发明授权

US09691928B2 Inverted metamorphic multijunction solar cells with doped alpha layer 有权
公开(公告)号：US09691928B2
公开(公告)日：2017-06-27
申请号：US14044147
申请日：2013-10-02
申请人： SolAero Technologies Corp.
发明人： Benjamin Cho , Yong Lin , Pravin Patel , Mark A. Stan , Arthur Cornfeld , Daniel McGlynn , Fred Newman
IPC分类号： H01L21/00 , H01L31/0687 , H01L31/18 , H01L31/078
CPC分类号： H01L31/06875 , H01L31/078 , H01L31/184 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A method of forming a multijunction solar cell comprising at least an upper subcell, a middle subcell, and a lower subcell, the method including forming a first alpha layer over said middle solar subcell using a surfactant and dopant including selenium, the first alpha layer configured to prevent threading dislocations from propagating; forming a metamorphic grading interlayer over and directly adjacent to said first alpha layer; forming a second alpha layer using a surfactant and dopant including selenium over and directly adjacent to said grading interlayer to prevent threading dislocations from propagating; and forming a lower solar subcell over said grading interlayer such that said lower solar subcell is lattice mismatched with respect to said middle solar subcell.

5. 发明申请

US20150207013A1 INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELLS HAVING A PERMANENT SUPPORTING SUBSTRATE 审中-公开
标题翻译：具有永久支持基板的反相金属多功能太阳能电池
公开(公告)号：US20150207013A1
公开(公告)日：2015-07-23
申请号：US14674627
申请日：2015-03-31
申请人： SolAero Technologies Corp.
发明人： Arthur Cornfeld , Jeff Steinfeldt
IPC分类号： H01L31/0725 , H01L31/18 , H01L31/0304 , H01L31/048
CPC分类号： H01L31/0725 , H01L31/0304 , H01L31/03046 , H01L31/03048 , H01L31/048 , H01L31/06875 , H01L31/184 , H01L31/1844 , H01L31/1848 , H01L31/1856 , H01L31/1892 , Y02E10/544 , Y02P70/521
摘要： The present disclosure provides a method of manufacturing a solar cell that includes providing a semiconductor growth substrate; depositing on said growth substrate a sequence of layers of semiconductor material forming a solar cell; applying a metal contact layer over said sequence of layers; affixing the adhesive polyimide surface of a permanent supporting substrate directly over said metal contact layer and permanently bonding it thereto by a thermocompressive technique; and removing the semiconductor growth substrate.
摘要翻译：本公开提供一种制造太阳能电池的方法，其包括提供半导体生长衬底; 在所述生长衬底上沉积形成太阳能电池的半导体材料层序列; 在所述层序上施加金属接触层; 将永久性支撑衬底的粘合聚酰亚胺表面直接固定在所述金属接触层上并通过热压技术永久地将其粘合到其上; 并移除半导体生长衬底。

6. 发明授权

US10693029B1 Inverted metamorphic multijunction solar cells with doped alpha layer 有权
公开(公告)号：US10693029B1
公开(公告)日：2020-06-23
申请号：US15453578
申请日：2017-03-08
申请人： SolAero Technologies Corp.
发明人： Benjamin Cho , Yong Lin , Pravin Patel , Mark Stan , Arthur Cornfeld , Daniel McGlynn , Fred Newman
IPC分类号： H01L31/0687 , H01L31/065 , H01L31/078 , H01L31/18
摘要： A method of forming a multijunction solar cell comprising at least a first subcell and a second subcell, the method including forming a first alpha layer over said first solar subcell using a surfactant and dopant including selenium or tellurium, the first alpha layer configured to prevent threading dislocations from propagating; forming a metamorphic grading interlayer over and directly adjacent to said first alpha layer; forming a second alpha layer using a surfactant and dopant including selenium or tellurium over and directly adjacent to said grading interlayer to prevent threading dislocations from propagating; and forming the second solar subcell over said grading interlayer such that the second solar subcell is lattice mismatched with respect to the first solar subcell.

7. 发明授权

US10541349B1 Methods of forming inverted multijunction solar cells with distributed Bragg reflector 有权
公开(公告)号：US10541349B1
公开(公告)日：2020-01-21
申请号：US13872663
申请日：2013-04-29
申请人： SolAero Technologies Corp.
发明人： Mark A. Stan , Arthur Cornfeld
IPC分类号： H01L31/18 , H01L31/056 , H01L31/0725 , H01L31/054 , H01L31/0687
摘要： A method of manufacturing an inverted metamorphic multijunction solar cell is disclosed herein. The method includes forming a lattice constant transition material positioned between a first subcell and a second subcell using a metal organic chemical vapor deposition (MOCVD) reactor. The solar cell further includes at least one distributed Bragg reflector (DBR) layer directly adjacent a back surface field (BSF) layer.

8. 发明申请

US20170162739A1 INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELL WITH MULTIPLE METAMORPHIC LAYERS 审中-公开
公开(公告)号：US20170162739A1
公开(公告)日：2017-06-08
申请号：US15433641
申请日：2017-02-15
申请人： SolAero Technologies Corp.
发明人： Yong Lin , Paul R. Sharps , Arthur Cornfeld , Pravin Patel , Mark A. Stan , Benjamin Cho
IPC分类号： H01L31/078 , H01L31/18 , H01L31/0725 , H01L31/0735 , H01L31/0687
CPC分类号： H01L31/078 , H01L31/03046 , H01L31/06875 , H01L31/1844 , H01L31/1892 , Y02E10/544 , Y02P70/521
摘要： The disclosure describes multi-junction solar cell structures that include two or more graded interlayers.

9. 发明授权

US09356176B2 Inverted metamorphic multijunction solar cell with metamorphic layers 有权
标题翻译：变质层变质多相太阳能电池
公开(公告)号：US09356176B2
公开(公告)日：2016-05-31
申请号：US14813745
申请日：2015-07-30
申请人： SolAero Technologies Corp.
发明人： Arthur Cornfeld , Pravin Patel , Mark A. Stan , Benjamin Cho , Paul R. Sharps , Daniel J. Aiken , John Spann
IPC分类号： H01L31/0687 , H01L31/078 , H01L31/18
CPC分类号： H01L31/06875 , H01L31/078 , H01L31/1844 , H01L31/1892 , Y02E10/544 , Y02P70/521
摘要： A multijunction solar cell having at least four solar subcells includes a first solar subcell having a first band gap. A first graded interlayer adjacent to the first solar subcell and has a second band gap greater than the first band gap and that is constant at 1.5 eV throughout the thickness of the first graded interlayer. A second solar subcell is adjacent to the first graded interlayer and has a third band gap smaller than the first band gap of the first solar subcell. The second solar subcell is lattice mismatched with respect to the first solar subcell. A second graded interlayer is adjacent to the second solar subcell and has a fourth band gap greater than the third band gap of the second solar subcell and that is constant at 1.1 eV throughout the thickness of the second graded interlayer. A third solar subcell is adjacent to the second graded interlayer and has a fifth band gap smaller than the third band gap of the second solar subcell. The third solar subcell is lattice mismatched with respect to the second solar subcell. Each of the first and second graded interlayers is composed, respectively, of a compositionally step-graded series of (InxGa1-x)yAl1-yAs layers with monotonically changing lattice constant, with x and y having respective values such that the band gap of each interlayer remains constant throughout its thickness, and wherein 0
摘要翻译：具有至少四个太阳能子电池的多结太阳能电池包括具有第一带隙的第一太阳能子电池。与第一太阳能子电池相邻的第一梯度中间层，并且具有大于第一带隙的第二带隙，并且在第一梯度夹层的整个厚度处恒定为1.5eV。第二太阳能子电池与第一梯度中间层相邻，并且具有小于第一太阳能子电池的第一带隙的第三带隙。第二太阳能子电池相对于第一太阳能子电池晶格失配。第二渐变夹层与第二太阳能子电池相邻，并且具有大于第二太阳能子电池的第三带隙的第四带隙，并且在第二渐变夹层的整个厚度处恒定为1.1eV。第三太阳能子电池与第二梯度中间层相邻，并且具有小于第二太阳能子电池的第三带隙的第五带隙。第三太阳能子电池相对于第二太阳能子电池晶格失配。第一和第二渐变夹层中的每一个分别由具有单调变化的晶格常数的组成阶梯级系列（In x Ga 1-x）y Al 1-y As层组成，其中x和y具有各自的值，使得每个中间层在整个厚度上保持不变，其中0

10. 发明申请

US20150340530A1 BACK METAL LAYERS IN INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELLS 审中-公开
标题翻译：逆金属多金属太阳能电池中的背金属层
公开(公告)号：US20150340530A1
公开(公告)日：2015-11-26
申请号：US14739475
申请日：2015-06-15
申请人： SolAero Technologies Corp.
发明人： Arthur Cornfeld
IPC分类号： H01L31/0687 , H01L31/18
CPC分类号： H01L31/06875 , H01L31/02 , H01L31/1844 , H01L31/1852 , H01L31/1892 , Y02E10/544 , Y02P70/521
摘要： A multijunction solar cell comprising an upper first solar subcell having a first band gap; a middle second solar subcell adjacent to the first solar subcell and having a second band gap smaller than the first band gap, and having a base layer and an emitter layer; a graded interlayer adjacent to said second solar subcell, having a third band gap greater than the second band gap; a lower solar subcell adjacent to the grading interlayer, having a fourth band gap smaller than said second band gap such that the third subcell is lattice mismatched with respect to said second subcell; and a metal electrode layer deposited on said lower subcell and having a coefficient of thermal expansion substantially similar to that of the subcells.
摘要翻译：一种多结太阳能电池，包括具有第一带隙的上部第一太阳能子电池; 与第一太阳能子电池相邻并且具有小于第一带隙的第二带隙的中间第二太阳能子电池，并具有基极层和发射极层; 与所述第二太阳能子电池相邻的梯度中间层，具有大于第二带隙的第三带隙; 与分级中间层相邻的下部太阳能子电池，具有小于所述第二带隙的第四带隙，使得所述第三子电池相对于所述第二子电池晶格失配; 以及沉积在所述下部子电池上并具有基本上类似于所述子电池的热膨胀系数的金属电极层。

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