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61. 发明授权

US5273931A Method of growing epitaxial layers of N-doped II-VI semiconductor compounds 失效
标题翻译：生长N掺杂II-VI半导体化合物的外延层的方法
公开(公告)号：US5273931A
公开(公告)日：1993-12-28
申请号：US894308
申请日：1992-06-04
申请人： Nikhil Taskar , Babar A. Khan , Donald R. Dorman
发明人： Nikhil Taskar , Babar A. Khan , Donald R. Dorman
IPC分类号： C30B25/02 , H01L21/365 , H01L21/20
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/48 , H01L21/02395 , H01L21/0256 , H01L21/02573 , Y10S148/041 , Y10S148/064 , Y10S438/925
摘要： Epitaxial layers of N-doped II-VI semiconductor compounds are grown on GaAs substrates by MOCVD using FME. Separating the growth and doping by alternating introduction of (1) the semiconductor cation and anion and (2) the cation and the dopant increases the level of doping, the level of activation, and the crystal quality.
摘要翻译：通过使用FME的MOCVD在GaAs衬底上生长N掺杂的II-VI半导体化合物的外延层。通过交替引入（1）半导体阳离子和阴离子和（2）阳离子和掺杂剂来分离生长和掺杂，增加掺杂水平，活化水平和晶体质量。

62. 发明授权

US5266504A Low temperature emitter process for high performance bipolar devices 失效
标题翻译：用于高性能双极器件的低温发射极工艺
公开(公告)号：US5266504A
公开(公告)日：1993-11-30
申请号：US857862
申请日：1992-03-26
申请人： Jeffrey L. Blouse , Jack O. Chu , Brian Cunningham , Jeffrey P. Gambino , Louis L. Hsu , David E. Kotecki , Seshadri Subbanna , Zu-Jean Tien
发明人： Jeffrey L. Blouse , Jack O. Chu , Brian Cunningham , Jeffrey P. Gambino , Louis L. Hsu , David E. Kotecki , Seshadri Subbanna , Zu-Jean Tien
IPC分类号： H01L21/20 , H01L21/331 , H01L21/365
CPC分类号： H01L29/66287 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L29/66242 , Y10S148/124
摘要： A method of manufacturing a bipolar transistor by use of low temperature emitter process is disclosed. After completion of the usual base and collector formation in a vertical bipolar transistor, an emitter opening is etched in the insulator layer over the base layer at selected locations. A thin layer (less than 500 .ANG.) of in-situ doped amorphous silicon is deposited over the substrate and heated to densify for 30 to 60 minutes at about 650.degree. C. Subsequently an in-situ doped polysilicon layer of 100 to 200 nm is deposited over the amorphous Si film preferably at about 600.degree. C. Subsequently the layers are heated below 600.degree. C. for several hours to convert partially the amorphous Si into a monocrystalline emitter layer over the base regions.
摘要翻译：公开了一种通过使用低温发射器工艺制造双极晶体管的方法。在垂直双极晶体管中完成通常的基极和集电极形成之后，在选定位置的基极层上的绝缘体层中蚀刻发射极开口。原位掺杂非晶硅的薄层（小于500安格姆）沉积在衬底上，并在约650℃下加热至致密化30至60分钟。随后，100-200nm的原位掺杂多晶硅层为沉积在非晶Si膜上，优选在约600℃。随后将这些层在600℃以下加热数小时，以将非晶硅部分地转变成基底区域上的单晶发射极层。

63. 发明授权

US5248385A Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers 失效
标题翻译：单晶碳化硅薄膜在碳化硅晶圆上同轴外延生长的工艺
公开(公告)号：US5248385A
公开(公告)日：1993-09-28
申请号：US718314
申请日：1991-06-12
申请人： J. Anthony Powell
发明人： J. Anthony Powell
IPC分类号： H01L21/36 , H01L21/365 , H01L21/465
CPC分类号： H01L21/465 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , Y10S117/902 , Y10S148/148 , Y10S438/931
摘要： The invention is a method for growing homoepitaxial films of SiC on low-tilt-angle vicinal (0001) SiC wafers. The invention proposes and teaches a new theoretical model for the homoepitaxial growth of SiC films on (0001) SiC substrates. The inventive method consists of (1) preparing the growth surface of SiC wafers slightly off-axis (from less than 0.1.degree. to 6.degree.) from the (0001) plane, (2) subjecting the growth surface to a suitable etch, and then (3) growing the homoepitaxial film using conventional SiC growth techniques.
摘要翻译：本发明是用于在低倾角邻近（0001）SiC晶片上生长SiC的同质外延膜的方法。本发明提出并教导了（0001）SiC衬底上SiC膜的同质外延生长的新理论模型。本发明的方法包括（1）从（0001）面制备稍微离轴（从小于0.1度至6度）的SiC晶片的生长表面，（2）使生长表面进行合适的蚀刻，然后（3）使用传统的SiC生长技术生长同质外延膜。

64. 发明授权

US4983249A Method for producing semiconductive single crystal 失效
标题翻译：半导体单晶的制造方法
公开(公告)号：US4983249A
公开(公告)日：1991-01-08
申请号：US322200
申请日：1989-03-09
申请人： Tsunemasa Taguchi , Hirokuni Nanba
发明人： Tsunemasa Taguchi , Hirokuni Nanba
IPC分类号： C30B25/02 , C30B25/18 , H01L21/365 , H01L33/28
CPC分类号： H01L33/285 , C30B25/02 , C30B25/18 , C30B29/48 , H01L21/02409 , H01L21/0256 , H01L21/02576 , H01L21/0262 , H01L33/0083 , Y10S117/902 , Y10S117/906
摘要： A n-type ZnSe thin layer is prepared by heating a ZnSe signal crystal substrate in a hydrogen atmosphere under a pressure of from 0.1 Torr. to 10 Torr. at a temperature of from 250.degree. C. to 450.degree. C. while supplying a gaseous organozinc compound, H.sub.2 Se gas and a gaseous organoaluminum compound in such amounts that a molar ratio of Se/Zn is from 10 to 100 and a molar ratio of Al/Zn is from 0.02 to 0.07 to grow the aluminum-doped ZnSe thin film on the ZnSe single crystal substrate.

65. 发明授权

US4908329A Process for the formation of a functional deposited film containing groups II and VI atoms by microwave plasma chemical vapor deposition process 失效
标题翻译：通过微波等离子体化学气相沉积工艺形成含有II和VI族原子的功能沉积膜的方法
公开(公告)号：US4908329A
公开(公告)日：1990-03-13
申请号：US302243
申请日：1989-01-27
申请人： Masahiro Kanai , Tsutomu Murakami , Takayoshi Arai , Soichiro Kawakami
发明人： Masahiro Kanai , Tsutomu Murakami , Takayoshi Arai , Soichiro Kawakami
IPC分类号： C23C16/50 , C23C16/30 , C23C16/452 , C23C16/511 , C30B25/10 , H01L21/365
CPC分类号： C30B25/105 , C23C16/306 , C23C16/452 , C30B29/48 , H01L21/02422 , H01L21/02551 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/0262 , Y10S148/045 , Y10S148/064
摘要： A process for the formation of a functional deposited film containing atoms belonging to the group II and VI of the periodical table as the main constituent atoms by introducing, into a film forming space for forming a deposited film on a substrate disposed therein, a group II compound (1) and a group VI compound (2) as the film-forming raw material and, if required, a compound (3) containing an element capable of controlling valence electrons for the deposited film as the constituent element each in a gaseous state, or in a state where at least one of such compounds is previously activated in an activation space disposed separately from the film forming space, while forming hydrogen atoms in an excited state which cause chemical reaction with at least one of the compounds (1), (2) and (3) in the gaseous state or in the activated state in an activation space different from the film forming space and introducing them into the film-forming space, thereby forming the functional deposited film on the substrate, wherein the hydrogen atoms in the excited state are formed from a hydrogen gas or a gas mixture composed of a hydrogen gas and a rare gas by means of a microwave plasma generated in a plasma generation chamber disposed in a cavity resonator integrated with two impedance matching circuits in a microwave circuit and the excited state of the hydrogen atom is controlled.

66. 发明授权

US4901670A Elemental mercury source for metal-organic chemical vapor deposition 失效
标题翻译：金属有机化学气相沉积的元素汞源
公开(公告)号：US4901670A
公开(公告)日：1990-02-20
申请号：US234722
申请日：1988-08-22
申请人： William L. Ahlgren
发明人： William L. Ahlgren
IPC分类号： C30B25/14 , C23C16/30 , C23C16/44 , C23C16/448 , C30B25/12 , H01L21/365
CPC分类号： C23C16/4485 , C23C16/306 , C30B25/12
摘要： Apparatus and method for supplying elemental mercury to a MOCVD reactor during the operation of the reactor and for maintaining a saturated mercury vapor atmosphere over a surface of a substrate. A susceptor assembly 10 includes a susceptor 20 having a surface for supporting a substrate 22 within a growth chamber. A reservoir 34 of liquid mercury 36 is disposed external to the reactor and supplies liquid mercury via a capillary feed tube 30 to a depression or trough 24 formed within a surface of the susceptor at an upstream position from the substrate. Mercury within the trough is vaporized by the heated susceptor and flows over the substrate, thereby establishing a saturated mercury atmoshere over the substrate. The reservoir may be pressurized by a source of gas or its vertical position may be adjusted to provide a gravity feed of the mercury.
摘要翻译：在反应器操作期间向MOCVD反应器供应元素汞并在基底表面上保持饱和的汞蒸汽气氛的装置和方法。基座组件10包括具有用于在生长室内支撑衬底22的表面的基座20。液体汞36的储存器34设置在反应器的外部，并且通过毛细管馈送管30将液态汞提供给形成在基座的表面内的凹陷或槽24，所述凹陷或槽24位于离基板的上游位置。槽内的汞被加热的基座蒸发并流过衬底，从而在衬底上建立饱和的汞。储存器可以由气体源加压，或者其垂直位置可以被调节以提供汞的重力进料。

67. 发明授权

US4859625A Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy 失效
标题翻译：使用具有分子层外延的MOCVD外延生长化合物半导体的方法
公开(公告)号：US4859625A
公开(公告)日：1989-08-22
申请号：US123497
申请日：1987-11-20
申请人： Fumio Matsumoto
发明人： Fumio Matsumoto
IPC分类号： H01L29/812 , C30B25/02 , C30B25/14 , H01L21/205 , H01L21/263 , H01L21/338 , H01L21/365 , H01L29/778
CPC分类号： C30B25/02 , C30B29/40 , C30B29/68 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , Y10S148/025 , Y10S148/041 , Y10S148/048 , Y10S148/057 , Y10S148/072 , Y10S148/094 , Y10S148/11 , Y10S438/935
摘要： A method for epitaxial growth of compound semiconductor containing three component elements, two component elements thereof being the same group elements, in which three kinds of compound gases each containing different one of the three component elements are cyclically introudced, under a predetermined pressure for a predetermined period respectively, onto a substrate enclosed in an evacuated crystal growth vessel so that a single crystal thin film of the compound semiconductor is formed on the substrate.
摘要翻译：一种包含三组分元素的化合物半导体的外延生长方法，其两个组分元素是相同的组元素，其中三种组分元素中的不同一种的三种化合物气体在预定压力下循环地覆盖预定的周期分别放置在封装在真空的晶体生长容器中的基板上，使得在基板上形成化合物半导体的单晶薄膜。

68. 发明授权

US4828938A Method for depositing materials containing tellurium and product 失效
标题翻译：用于沉积含碲和产品的材料的方法
公开(公告)号：US4828938A
公开(公告)日：1989-05-09
申请号：US851004
申请日：1986-04-11
申请人： Lawrence S. Lichtmann , James D. Parsons
发明人： Lawrence S. Lichtmann , James D. Parsons
IPC分类号： C01B19/04 , C23C16/18 , C23C16/22 , C23C16/28 , C23C16/30 , C23C16/44 , C30B25/02 , C30B29/48 , H01L21/365
CPC分类号： H01L21/0262 , C23C16/306 , C30B25/02 , C30B29/48 , H01L21/02398 , H01L21/02411 , H01L21/02562 , Y10S428/938
摘要： A method for chemical vapor deposition of materials containing tellurium, such as cadmium telluride and mercury cadmium telluride, wherein the reactant source of the tellurium is a tellurophene or methyltellurol. These reactant sources have high vapor pressures, and the reactant source vapors emitted from the reactant sources have decomposition temperatures of less than about 300.degree. C., so that deposition may be accomplished at low temperatures of about 250.degree. C. The reactant source vapor containing tellurium is mixed with a reactant source vapor containing another substance to be codeposited, such as dimethylcadmium or dimethylmercury, and contacted with a substrate maintained at the deposition temperature, the deposition being preferably accomplished in an inverted vertical chemical vapor deposition reactor.
摘要翻译：用于化学气相沉积包含碲的材料的方法，例如碲化镉和碲化汞镉，其中碲的反应物源是一种特氟氯丙烯或甲基碲酚。这些反应物源具有高蒸气压，并且从反应物源排出的反应物源蒸气具有小于约300℃的分解温度，使得可以在约250℃的低温下进行沉积。含有将碲与含有待共沉积的另一物质的反应物源蒸气混合，例如二甲基镉或二甲基汞，并与保持在沉积温度的基材接触，沉积优选在倒置的垂直化学气相沉积反应器中完成。

69. 发明授权

US4629514A Method of producing II-V compound semiconductors 失效
标题翻译：生产II-V化合物半导体的方法
公开(公告)号：US4629514A
公开(公告)日：1986-12-16
申请号：US708406
申请日：1985-03-05
申请人： Toshikazu Suda
发明人： Toshikazu Suda
IPC分类号： H01L31/04 , C30B23/02 , C30B25/02 , C30B31/06 , H01L21/20 , H01L21/205 , H01L21/34 , H01L21/365 , H01L29/47 , H01L29/872 , H01L21/38
CPC分类号： C30B23/02 , C30B25/02 , C30B29/10 , C30B31/06 , H01L21/02521 , H01L21/0262 , Y10S148/018 , Y10S148/125
摘要： A method of producing II-V compound semiconductors with greatly reduced intrinsic defect levels comprises the step of causing atoms or ions of at least one member selected from the group consisting of hydrogen and the halogens to be injected into and diffused through II-V compound semiconductors during or after the production thereof.
摘要翻译：制备具有大大降低的本征缺陷水平的II-V族化合物半导体的方法包括使选自氢和卤素中的至少一种的原子或离子注入并通过II-V化合物半导体扩散的步骤在其生产期间或之后。

70. 发明授权

US4569700A Method of manufacturing a stacked semiconductor device 失效
标题翻译：叠层半导体器件的制造方法
公开(公告)号：US4569700A
公开(公告)日：1986-02-11
申请号：US750245
申请日：1985-07-01
申请人： Masaharu Toyama
发明人： Masaharu Toyama
IPC分类号： H01L27/00 , H01L21/20 , H01L27/06 , H01L21/365
CPC分类号： H01L27/0688 , H01L21/02381 , H01L21/02532 , H01L21/02639 , Y10S117/904 , Y10S117/905
摘要： The invention provides a stacked semiconductor device having a plurality of monocrystalline semiconductor films of the same material which are formed on a monocrystalline semiconductor substrate and between which insulating films are sandwiched wherein the semiconductor device comprises at least one connecting region, and wherein the semiconductor substrate and the semiconductor films are vertically connected at the one connecting region.
摘要翻译：本发明提供了一种层叠半导体器件，其具有多个相同材料的单晶半导体膜，其形成在单晶半导体衬底上，并且其间夹有绝缘膜，其中半导体器件包括至少一个连接区域，并且其中半导体衬底和半导体膜在一个连接区域垂直连接。

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