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1. 发明公开

US20230156879A1 DISPLAY ELEMENT AND METHOD FOR MANUFACTURING A DISPLAY ELEMENT 审中-公开
公开(公告)号：US20230156879A1
公开(公告)日：2023-05-18
申请号：US17995826
申请日：2021-04-07
申请人： Lumineq Oy
发明人： Jani Holopainen , Kari Härkönen
IPC分类号： H05B33/14 , H05B33/10 , C23C16/30
CPC分类号： H05B33/145 , H05B33/10 , C23C16/306 , C23C16/45525
摘要： This disclosure relates to use of group 4 element codoping in a phosphor layer of activator-doped zinc sulfide of a display element, a display element, and a method for manufacturing a display element. The display element (100) comprises a first insulator layer (111), a second insulator layer (112), and a first phosphor layer (121) of activator-group 4 element codoped zinc sulfide between the first insulator layer (111) and the second insulator layer (112). The first phosphor layer (121) has an average atomic percentage of group 4 elements of at least 0.01 atomic percent.

2. 发明授权

US10079144B2 Composition for layered transition metal chalcogenide compound layer and method of forming layered transition metal chalcogenide compound layer 有权
公开(公告)号：US10079144B2
公开(公告)日：2018-09-18
申请号：US15134693
申请日：2016-04-21
申请人： Samsung Electronics Co., Ltd.
发明人： Haeryong Kim , Hyeonjin Shin , Seongjun Park
IPC分类号： C01B17/00 , H01L21/02 , C23C16/56 , C09D1/00 , H01L29/423 , C23C16/30 , H01L29/786
CPC分类号： H01L21/02568 , C09D1/00 , C23C16/305 , C23C16/306 , C23C16/56 , H01L21/02381 , H01L21/0262 , H01L21/02664 , H01L29/42356 , H01L29/78681
摘要： Provided are a composition for forming a layered transition metal chalcogenide compound layer and a method of forming a layered transition metal chalcogenide compound layer by using the composition. The composition includes at least one of a transition metal precursor represented by Formula 1 and a chalcogenide precursor represented by Formula 2. Ma(R1)6-b-c(H)b(R2)c [Formula 1] wherein, in Formula 1, M, R1, R2, a, b, and c are the same as defined in the detailed description, and M′kX2 [Formula 2] wherein, in Formula 2, M′ and X are the same as defined in the detailed description.

3. 发明授权

US10060030B2 Evaporation vessel apparatus and method 有权
公开(公告)号：US10060030B2
公开(公告)日：2018-08-28
申请号：US15160556
申请日：2016-05-20
申请人： Ceres Technologies, Inc.
发明人： Egbert Woelk , Ronald L. DiCarlo
IPC分类号： C23C16/455 , C23C14/24 , C23C14/54 , C23C16/448 , C30B23/00 , C30B25/14 , C23C16/30 , C23C14/06
CPC分类号： C23C16/455 , C23C14/0617 , C23C14/0629 , C23C14/243 , C23C14/54 , C23C16/301 , C23C16/306 , C23C16/4482 , C30B23/00 , C30B25/14
摘要： Disclosed is a method of providing a constant concentration of a metal-containing precursor compound in the vapor phase in a carrier gas. Such method is particularly useful in supplying a constant concentration of a gaseous metal-containing compound to a plurality of vapor deposition reactors.

4. 发明申请

US20160265113A1 METHOD AND APPARATUS 审中-公开
公开(公告)号：US20160265113A1
公开(公告)日：2016-09-15
申请号：US15160556
申请日：2016-05-20
申请人： Rohm and Haas Electronic Materials LLC
发明人： Egbert WOELK , Ronald L. DiCARLO
IPC分类号： C23C16/52 , C23C16/455
CPC分类号： C23C16/455 , C23C14/0617 , C23C14/0629 , C23C14/243 , C23C14/54 , C23C16/301 , C23C16/306 , C23C16/4482 , C30B23/00 , C30B25/14
摘要： Disclosed is a method of providing a constant concentration of a metal-containing precursor compound in the vapor phase in a carrier gas. Such method is particularly useful in supplying a constant concentration of a gaseous metal-containing compound to a plurality of vapor deposition reactors.

5. 发明授权

US09064700B2 Crystallization annealing processes for production of CIGS and CZTS thin-films 有权
标题翻译：用于生产CIGS和CZTS薄膜的结晶退火工艺
公开(公告)号：US09064700B2
公开(公告)日：2015-06-23
申请号：US13467904
申请日：2012-05-09
申请人： Kaichiu Wong , Erik Sean Smith , Christ Willie Ford
发明人： Kaichiu Wong , Erik Sean Smith , Christ Willie Ford
IPC分类号： H01L21/00 , H01L21/02 , H01L31/032 , C23C16/30 , C23C16/56
CPC分类号： H01L21/02557 , C23C16/306 , C23C16/56 , H01L21/0256 , H01L21/02568 , H01L21/02667 , H01L31/0322 , H01L31/0326 , Y02E10/541
摘要： In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, and annealing the precursor layer in the presence of a gaseous phase comprising volatile species, the partial pressure of each volatile species being approximately constant over substantially all of the surface of the precursor layer, the partial pressure of each species being between approximately 0.1 mTorr and 760 Torr, where the presence of the gaseous phase reduces decomposition of volatile species from the precursor layer during annealing.
摘要翻译：在一个实施方案中，一种方法包括将硫族化物前体层沉积到基底上，并且在包含挥发性物质的气相存在下退火前体层，每个挥发性物质的分压在基本上全部的前体层，每种物质的分压在约0.1mTorr和760托之间，其中气相的存在减少了退火期间挥发性物质从前体层的分解。

6. 发明申请

US20140093645A1 ATOMIC LAYER DEPOSITION OF QUATERNARY CHALCOGENIDES 有权
标题翻译：原子层析沉积季铵盐
公开(公告)号：US20140093645A1
公开(公告)日：2014-04-03
申请号：US13631135
申请日：2012-09-28
申请人： Elijah J. THIMSEN , Shannon C. RIHA , Alex B.F. MARTINSON , Jeffrey W. ELAM , Michael J. PELLIN
发明人： Elijah J. THIMSEN , Shannon C. RIHA , Alex B.F. MARTINSON , Jeffrey W. ELAM , Michael J. PELLIN
IPC分类号： C23C16/30
CPC分类号： C23C16/305 , C23C16/306 , C23C16/45529 , C23C16/45531 , C23C16/56
摘要： Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu2ZnSnS4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.
摘要翻译：提供了硫族化合物（包括Cu2ZnSnS4）的合成和沉积的方法和系统。二元化合物，例如金属硫化物，可通过将衬底交替暴露于金属阳离子前体和硫族元素阴离子前体之间进行沉积，其间具有吹扫步骤。

7. 发明授权

US08613899B2 Apparatus and method for producing free-standing materials 有权
标题翻译：用于生产独立材料的装置和方法
公开(公告)号：US08613899B2
公开(公告)日：2013-12-24
申请号：US13449126
申请日：2012-04-17
申请人： Heather A. G. Stern , Vincent DiFilippo , Jitendra S. Goela , Michael A. Pickering , Hua Bai , Debashis Chakraborty , Hangyao Wang
发明人： Heather A. G. Stern , Vincent DiFilippo , Jitendra S. Goela , Michael A. Pickering , Hua Bai , Debashis Chakraborty , Hangyao Wang
IPC分类号： B01J19/00 , C01B17/00 , C01B19/00 , H01L21/00
CPC分类号： B05B7/26 , B01F3/02 , B01F5/0256 , B01F13/1016 , C23C14/0629 , C23C14/228 , C23C14/564 , C23C16/01 , C23C16/306 , C23C16/403 , C23C16/4401 , C23C16/45512
摘要： An apparatus includes a manifold with a chamber for mixing multiple reactants. Gases are jetted into the manifold by a plurality of inlet injectors. The inlet injectors are arranged such that the gases passing into the manifold impinge on each other at a common point to form a mixture. The mixture passes through a plurality of holes in one side of the manifold into a deposition chamber where the mixture of gases impinges on additional gases at a common point to provide a reaction resulting in deposition of solid materials in the deposition chamber. The solid materials are free-standing.
摘要翻译：一种装置包括具有用于混合多个反应物的室的歧管。气体通过多个入口喷射器喷射到歧管中。入口喷射器被布置成使得进入歧管的气体在共同点处彼此撞击以形成混合物。混合物通过歧管一侧的多个孔进入沉积室，其中气体混合物在共同点撞击另外的气体以提供反应，从而在沉积室中沉积固体材料。固体材料是独立的。

8. 发明申请

US20130312665A1 METHOD AND APPARATUS 审中-公开
标题翻译：方法和装置
公开(公告)号：US20130312665A1
公开(公告)日：2013-11-28
申请号：US13959699
申请日：2013-08-05
申请人： Rohm and Haas Electronic Materials LLC
发明人： Egbert WOELK , Ronald L. DiCARLO
IPC分类号： C23C16/52
CPC分类号： C23C16/455 , C23C14/0617 , C23C14/0629 , C23C14/243 , C23C14/54 , C23C16/301 , C23C16/306 , C23C16/4482 , C30B23/00 , C30B25/14
摘要： Disclosed is a method of providing a constant concentration of a metal-containing precursor compound in the vapor phase in a carrier gas. Such method is particularly useful in supplying a constant concentration of a gaseous metal-containing compound to a plurality of vapor deposition reactors.
摘要翻译：公开了一种在载气中在气相中提供恒定浓度的含金属的前体化合物的方法。这种方法特别可用于将恒定浓度的含气态金属的化合物供应给多个气相沉积反应器。

9. 发明申请

US20110262628A1 METHOD AND SYSTEM FOR INLINE CHEMICAL VAPOR DEPOSITION 有权
标题翻译：用于在线化学气相沉积的方法和系统
公开(公告)号：US20110262628A1
公开(公告)日：2011-10-27
申请号：US13156465
申请日：2011-06-09
申请人： Piero Sferlazzo , Thomas Michael Lampros
发明人： Piero Sferlazzo , Thomas Michael Lampros
IPC分类号： B05D5/12 , C23C16/44
CPC分类号： C23C16/54 , C23C16/306 , C23C16/407 , C23C16/545 , H01L31/0322 , H01L31/0749 , H01L31/18 , H01L31/206 , Y02E10/541 , Y02P70/521
摘要： Disclosed are an inline chemical vapor deposition method and system for fabricating a device. The method includes transporting a web or discrete substrate through a deposition chamber having a plurality of deposition modules. A buffer layer, a window layer and a transparent conductive layer are deposited onto the substrate during passage through a first deposition module, a second deposition module and a third deposition module, respectively. Advantageously, the steps for generating the buffer layer, window layer and transparent conductive layer are performed sequentially in a common vacuum environment of a single deposition chamber and the use of a conventional chemical bath deposition process to deposit the buffer layer is eliminated. The method is suitable for the manufacture of different types of devices including various types of solar cells such as copper indium gallium diselenide solar cells.
摘要翻译：公开了一种用于制造装置的在线化学气相沉积方法和系统。该方法包括通过具有多个沉积模块的沉积室输送幅材或离散基板。在通过第一沉积模块，第二沉积模块和第三沉积模块的过程中，缓冲层，窗口层和透明导电层分别沉积到衬底上。有利地，用于产生缓冲层，窗口层和透明导电层的步骤在单个沉积室的共同真空环境中顺序进行，并且消除了使用常规化学浴沉积工艺沉积缓冲层。该方法适用于制造不同类型的器件，包括各种类型的太阳能电池，如铜铟镓二硒化物太阳能电池。

10. 发明申请

US20100221420A1 PHOSPHOR FILM AND METHOD OF PRODUCING THE PHOSPHOR FILM 审中-公开
标题翻译：磷光体膜和生产磷光体膜的方法
公开(公告)号：US20100221420A1
公开(公告)日：2010-09-02
申请号：US12779648
申请日：2010-05-13
申请人： Tomoyuki Oike , Tatsuya Iwasaki
发明人： Tomoyuki Oike , Tatsuya Iwasaki
IPC分类号： B05D5/06
CPC分类号： C23C16/306 , C09K11/584 , C23C14/0629 , C23C14/5806 , C23C16/56
摘要： A phosphor film high in efficiency and less in luminescence irregularity and a method of producing the phosphor film are provided. The phosphor film includes a zinc sulfide compound containing an additive element(s). The additive element is at least one element selected from the group consisting of Ag, Cu and Au; the concentration of the additive element is 0.2 mol % or more and 5 mol % or less with respect to Zn; and the film thickness of the phosphor film is 10 nm or more and 2 um or less.
摘要翻译：提供了效率高，发光不均匀性低的荧光体膜以及荧光体膜的制造方法。荧光体膜包括含有添加元素的硫化锌化合物。添加元素是选自Ag，Cu和Au中的至少一种元素; 相对于Zn，添加元素的浓度为0.2摩尔％以上且5摩尔％以下。荧光体膜的膜厚为10nm以上且2μm以下。

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