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71. 发明授权

US07280915B2 Navigation device and method of presenting information corresponding to travel course stage 失效
标题翻译：导航装置和呈现对应于旅行课程阶段的信息的方法
公开(公告)号：US07280915B2
公开(公告)日：2007-10-09
申请号：US11105374
申请日：2005-04-14
申请人： Masaki Watanabe , Fumio Seto , Hirofumi Inoue , Toshiaki Takahashi , Okihiko Nakayama
发明人： Masaki Watanabe , Fumio Seto , Hirofumi Inoue , Toshiaki Takahashi , Okihiko Nakayama
IPC分类号： G06G7/78
CPC分类号： G01C21/367
摘要： A CPU of a navigation device includes a clock unit, a continuous driving time measurement unit that measures continuous driving time from a traveling start time, a course stage prediction unit, and a presenting information controller. The course stage prediction unit selects based on the traveling start time, a first transition determination reference time for transition from a “first stage” to a “middle stage” from prepared data of the first transition determination reference time and a second transition determination reference time for transition from the “middle stage” to a “last stage” from prepared data of the second transition determination reference time. The course stage prediction unit then predicts a course stage by comparing the continuous driving time with the selected transition determination reference times. Depending on the predicted course stage, the presenting information controller presents information convenient for a driver in the predicted course stage.
摘要翻译：导航装置的CPU包括时钟单元，连续驱动时间测量单元，其测量从行驶开始时间开始的连续行驶时间，课程预测单元和呈现信息控制器。课程阶段预测单元基于行驶开始时间，从第一转变判定基准时间的准备数据和第二转变判定基准时间从“第一阶段”到“中间阶段”的转变的第一转移判定基准时间用于从第二转变确定参考时间的准备数据从“中间阶段”转换到“最后阶段”。课程阶段预测单元然后通过将连续行驶时间与所选择的转移确定参考时间进行比较来预测课程阶段。根据预测的课程阶段，演示信息控制器在预测课程阶段提供方便驾驶员的信息。

72. 发明申请

US20070166642A1 Photosensitive resin composition, and cured product and use thereof 审中-公开
标题翻译：光敏树脂组合物和固化产物及其用途
公开(公告)号：US20070166642A1
公开(公告)日：2007-07-19
申请号：US11579920
申请日：2005-05-25
申请人： Hirofumi Inoue
发明人： Hirofumi Inoue
IPC分类号： G03C1/00
CPC分类号： G03F7/0388 , G03F7/027 , G03F7/038 , H05K3/287
摘要： The invention relates to a photosensitive resin composition comprising (A) an epoxy(meth)acrylate resin synthesized from components containing (a) epoxy prepolymer, (b) an unsaturated group-containing monocarboxylic acid and (c) an acid anhydride, (B) a urethane (meth)acrylate resin synthesized from components containing (d) a dihydroxyl compound having a carboxyl group, (e) a polyol compound having an number average molecular weight of 200 to 20,000, (f) a hydroxyl compound having a (meth)acryloyl group and (g) diisocyanate compound, (C) an epoxy resin, (D) a diluent, (E) a photopolymerization initiator and if appropriate (F) inorganic ion exchanger, and cured product and use thereof. The photosensitive resin composition of the invention having good photosensitivity, developability, flexibility and property exhibiting excellent HHBT performance can be suitably used in printed circuit boards.
摘要翻译：本发明涉及一种感光性树脂组合物，其包含（A）由（a）环氧预聚物，（b）不饱和基团的一元羧酸和（c）酸酐组分的组分合成的环氧（甲基）丙烯酸酯树脂，（B）由（d）具有羧基的二羟基化合物，（e）数均分子量为200〜20,000的多元醇化合物的组分合成的聚氨酯（甲基）丙烯酸酯树脂，（f）具有（甲基）丙烯酰基和（g）二异氰酸酯化合物，（C）环氧树脂，（D）稀释剂，（E）光聚合引发剂和（如果合适的话）无机离子交换剂，以及固化产物及其用途。具有良好的感光性，显影性，柔软性和显示出优异的HHBT性能的本发明的感光性树脂组合物可以适用于印刷电路板。

73. 发明申请

US20060215500A1 Disk discriminating method and disk discriminating apparatus 失效
标题翻译：盘识别方法和盘识别装置
公开(公告)号：US20060215500A1
公开(公告)日：2006-09-28
申请号：US11337094
申请日：2006-01-23
申请人： Norio Hatanaka , Ryoichi Ishikawa , Hirofumi Inoue
发明人： Norio Hatanaka , Ryoichi Ishikawa , Hirofumi Inoue
IPC分类号： G11B7/00
CPC分类号： G11B19/12
摘要： To discriminate a disk in a short time, a calculating part 16 measures an amplitude of one of a focus error signal and a tracking error signal, which are output from a differential signal generating part 15, several times, and outputs the measured amplitudes to a controller 20. The controller 20 compares the input amplitudes with threshold values stored in a memory 21, respectively, and determines whether or not an amplification gain of one of the focus error signal and the tracking error signal is changed. If it is determined that the amplification gain of one of the focus error signal and the tracking error signal is changed, the controller 20 changes the amplification gain of one of the focus error signal and the tracking error signal to an amplification gain represented by one of the threshold values and discriminates the kind of an optical disk based on the changed amplification gain.
摘要翻译：为了在短时间内识别盘，计算部16测量从差分信号生成部15输出的多次的聚焦误差信号和跟踪误差信号之一的振幅，并将测得的振幅输出到控制器20。控制器20分别将输入幅度与存储在存储器21中的阈值进行比较，并确定聚焦误差信号和跟踪误差信号之一的放大增益是否改变。如果确定聚焦误差信号和跟踪误差信号之一的放大增益改变，则控制器20将聚焦误差信号和跟踪误差信号之一的放大增益改变为由阈值并基于改变的放大增益来鉴别光盘的种类。

74. 发明申请

US20050184323A1 Semiconductor memory with trench capacitor and method of fabricating the same 失效
标题翻译：具有沟槽电容器的半导体存储器及其制造方法
公开(公告)号：US20050184323A1
公开(公告)日：2005-08-25
申请号：US11038173
申请日：2005-01-21
申请人： Mitsuru Sato , Hirofumi Inoue , Masaru Kito
发明人： Mitsuru Sato , Hirofumi Inoue , Masaru Kito
IPC分类号： H01L27/108 , H01L21/8242 , H01L27/10
CPC分类号： H01L27/10867
摘要： A semiconductor device includes semiconductor substrate, a trench capacitor formed in the semiconductor substrate, a cell transistor adjacently formed to the trench capacitor and having a gate electrode formed on the semiconductor substrate and a source/drain region formed in a surface of the semiconductor substrate, an impurity diffusion region formed in the semiconductor substrate so as to be electrically connected between the trench capacitor and the source/drain region, and a Ge inclusion region formed between the impurity diffusion region and the trench capacitor.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底中的沟槽电容器，与沟槽电容器相邻形成并具有形成在半导体衬底上的栅极电极和形成在半导体衬底的表面中的源极/漏极区域的单元晶体管，形成在半导体衬底中以便电连接在沟槽电容器和源极/漏极区域之间的杂质扩散区域和形成在杂质扩散区域和沟槽电容器之间的Ge包含区域。

75. 发明申请

US20050159853A1 Driving status detection device and related method 审中-公开
标题翻译：驾驶状态检测装置及相关方法
公开(公告)号：US20050159853A1
公开(公告)日：2005-07-21
申请号：US11032064
申请日：2005-01-11
申请人： Toshiaki Takahashi , Hirofumi Inoue , Hidenori Seguchi
发明人： Toshiaki Takahashi , Hirofumi Inoue , Hidenori Seguchi
IPC分类号： B60K28/06 , G01P3/00 , G06F17/00
CPC分类号： B60W50/16 , B60W40/08 , B60W2540/22
摘要： In a driving status detection device and method for detecting a characteristic driving status during a drive of a vehicle, a vehicle speed is detected, a differentiated value of second order of the vehicle speed within a given time interval is calculated and a risk occurrence scene, which is a driving status at a high risk for a driver, is detected based on the differentiated value of second order of the vehicle speed.
摘要翻译：在用于检测车辆的驱动期间的特性驱动状态的驾驶状态检测装置和方法中，检测车速，计算给定时间间隔内的车速的二阶微分值和风险发生场景，基于车速的二阶微分值来检测驾驶员的高风险驾驶状态。

76. 发明授权

US5939184A Polyolefin-based composite material containing a stratiform silicate and production process therefor 失效
标题翻译：含有层状硅酸盐的聚烯烃系复合材料及其制造方法
公开(公告)号：US5939184A
公开(公告)日：1999-08-17
申请号：US855610
申请日：1997-05-13
申请人： Hirofumi Inoue , Teruo Hosokawa
发明人： Hirofumi Inoue , Teruo Hosokawa
IPC分类号： C08K9/02 , B32B5/16 , C08K3/34
CPC分类号： C08K9/02 , Y10S977/788 , Y10T428/259 , Y10T428/31935 , Y10T428/31938
摘要： A material which exhibits enhanced mechanical strength and heat resistance is provided, comprising: (a) 99.9 to 60% by weight of a modified polyolefin or a polyolefin containing such a modified polyolefin in an amount of at least 1% by weight, the modified polyolefin having a copolymer portion as a graft or a block in a polyolefin, the copolymer portion made of an unsaturated carboxylic acid or a derivative thereof and a monomer, which has a monomer reactivity ratio, the product of which, when multiplied by a monomer reactivity ratio of the unsaturated carboxylic acid or the derivative thereof, is 1 or less; and (b) 0.1 to 40% by weight of a lipophilic interstratified compound in which tetraalkylammonium cation is inserted in a swellable stratiform silicate; can be obtained simply by taking the steps of mixing and melt-kneading in the absence of a solvent, without swelling and cleaving a stratiform silicate compound using a swelling/dispersing medium or the like, such as an organic solvent.
摘要翻译：提供了具有增强的机械强度和耐热性的材料，其包括：（a）99.9至60重量％的改性聚烯烃或含有至少1重量％的改性聚烯烃的聚烯烃，改性聚烯烃在聚烯烃中具有共聚物部分作为接枝物或嵌段，由不饱和羧酸或其衍生物制成的共聚物部分和具有单体反应性比的单体，其乘积乘以单体反应性比的不饱和羧酸或其衍生物为1以下; 和（b）0.1〜40重量％的亲水性分层化合物，其中四烷基铵阳离子插入可膨胀的层状硅酸盐中; 可以简单地通过在不存在溶剂的情况下进行混合和熔融捏合的步骤，而不用溶胀/分散介质等（例如有机溶剂）溶解并裂解层状硅酸盐化合物。

77. 发明授权

US08964447B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08964447B2
公开(公告)日：2015-02-24
申请号：US13058952
申请日：2009-06-24
申请人： Hiroyuki Nagashima , Hirofumi Inoue
发明人： Hiroyuki Nagashima , Hirofumi Inoue
IPC分类号： G11C11/00 , G11C13/00
CPC分类号： G11C13/003 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/0023 , G11C13/004 , G11C13/0069 , G11C2213/31 , G11C2213/72
摘要： A nonvolatile semiconductor memory device comprises a cell array including a plurality of first lines, a plurality of second lines intersecting the plurality of first lines, and a plurality of memory cells arranged in matrix and connected at intersections of the first and second lines between both lines, each memory cell containing a serial circuit of an electrically erasable programmable variable resistive element of which resistance is nonvolatilely stored as data and a non-ohmic element; and a plurality of access circuits operative to simultaneously access the memory cells physically separated from each other in the cell array.
摘要翻译：一种非易失性半导体存储器件，包括一个单元阵列，该单元阵列包括多个第一线，与该多条第一线相交的多个第二线，以及多个存储单元，被布置成矩阵并连接在两条线之间的第一和第二线的交点处每个存储单元包含其中电阻被非易失性地存储为数据的电可擦除可编程可变电阻元件和非欧姆元件的串行电路; 以及多个访问电路，其操作以同时访问在单元阵列中彼此物理分离的存储单元。

78. 发明授权

US08793052B2 Electromagnetic suspension system 有权
标题翻译：电磁悬挂系统
公开(公告)号：US08793052B2
公开(公告)日：2014-07-29
申请号：US12678945
申请日：2008-12-01
申请人： Hirofumi Inoue , Masanori Horie
发明人： Hirofumi Inoue , Masanori Horie
IPC分类号： B60G17/015 , B60G17/016 , F16F9/00
CPC分类号： B60G17/015 , B60G17/0157 , B60G17/016 , B60G17/0182 , B60G17/0185 , B60G17/06 , B60G2202/24 , B60G2300/60 , B60G2400/202 , B60G2400/252 , B60G2400/91 , B60G2600/02 , B60G2600/08 , B60G2600/1872 , B60G2600/1882 , B60G2800/162 , B60G2800/916 , F16F9/00
摘要： A change of performance of an electromagnetic suspension unit is detected. When an integral Σ|Vs′−Vs*| of an absolute value of a difference between an actual value Vs* and an estimated value Vs′ of an expansion/contraction velocity of a shock absorber is larger than a performance change threshold value Sth, it is detected that the performance of the electromagnetic suspension unit is changed. Further, when an integral Σ|Vs*| of an absolute value of the actual value Vs* is larger than an integral Σ|Vs′| of an absolute value of the estimated value Vs′ by a predetermined value, performance of the shock absorber is changed such that a damping force of the shock absorber is reduced. Thus, the performance change of the electromagnetic suspension unit is detected based on the expansion/contraction velocity of the shock absorber.
摘要翻译：检测到电磁悬架单元的性能变化。当积分＆Sgr | | Vs'-Vs * |时实际值Vs *与减震器的伸缩速度的估计值Vs'之间的绝对值的绝对值大于性能变化阈值Sth时，检测到电磁悬架单元的性能改变了此外，当积分＆Sgr | | Vs * | 的实际值Vs *的绝对值大于积分＆Sgr | | Vs'| 将估计值Vs'的绝对值设定为预定值，改变减震器的性能，使得减震器的阻尼力减小。因此，基于减震器的伸缩速度来检测电磁悬架单元的性能变化。

79. 发明授权

US08759806B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US08759806B2
公开(公告)日：2014-06-24
申请号：US13182095
申请日：2011-07-13
申请人： Takeshi Yamaguchi , Hirofumi Inoue , Reika Ichihara , Takayuki Tsukamoto , Takashi Shigeoka , Katsuyuki Sekine , Shinya Aoki
发明人： Takeshi Yamaguchi , Hirofumi Inoue , Reika Ichihara , Takayuki Tsukamoto , Takashi Shigeoka , Katsuyuki Sekine , Shinya Aoki
IPC分类号： H01L29/02
CPC分类号： H01L45/146 , H01L27/2409 , H01L45/08 , H01L45/1233
摘要： A semiconductor memory device in an embodiment comprises memory cells, each of the memory cells disposed between a first line and a second line and having a variable resistance element and a switching element connected in series. The variable resistance element includes a variable resistance layer configured to change in resistance value thereof between a low-resistance state and a high-resistance state. The variable resistance layer is configured by a transition metal oxide. A ratio of transition metal and oxygen configuring the transition metal oxide varies between 1:1 and 1:2 along a first direction directed from the first line to the second line.
摘要翻译：实施例中的半导体存储器件包括存储单元，每个存储单元设置在第一线和第二线之间，并且具有串联连接的可变电阻元件和开关元件。可变电阻元件包括可变电阻层，其被配置为在低电阻状态和高电阻状态之间改变其电阻值。可变电阻层由过渡金属氧化物构成。构成过渡金属氧化物的过渡金属和氧的比例沿着从第一线指向第二线的第一方向在1:1和1:2之间变化。

80. 发明授权

US08648471B2 Nonvolatile semiconductor memory device including a via-hole with a narrowing cross-section and method of manufacturing the same 有权
标题翻译：包括具有窄截面的通孔的非易失性半导体存储器件及其制造方法
公开(公告)号：US08648471B2
公开(公告)日：2014-02-11
申请号：US13454625
申请日：2012-04-24
申请人： Hideyuki Tabata , Eiji Ito , Hirofumi Inoue
发明人： Hideyuki Tabata , Eiji Ito , Hirofumi Inoue
IPC分类号： H01L23/48 , H01L23/52 , H01L23/40
CPC分类号： H01L27/2481 , G11C13/00 , G11C13/0009 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2463 , H01L45/085 , H01L45/1233 , H01L45/147 , H01L45/1675 , H01L2924/0002 , H01L2924/00
摘要： A nonvolatile semiconductor memory device comprises a semiconductor substrate; a cell array block formed on the semiconductor substrate and including plural stacked cell array layers each with a plurality of first lines, a plurality of second lines crossing the plurality of first lines, and memory cells connected at intersections of the first and second lines between both lines; and a plurality of via-holes extending in the stacked direction of the cell array layers to individually connect the first or second line in the each cell array layer to the semiconductor substrate. The via-holes are formed continuously through the plural cell array layers, and multiple via-holes having equal lower end positions and upper end positions are connected to the first or second lines in different cell array layers.
摘要翻译：非易失性半导体存储器件包括半导体衬底; 形成在所述半导体衬底上的单元阵列块，并且包括多个堆叠的单元阵列层，每个堆叠的单元阵列层具有多个第一线，与所述多条第一线交叉的多个第二线，以及在所述第一和第二线的两个交点处连接的存储单元线条以及在单元阵列层的堆叠方向上延伸的多个通孔，以将每个单元阵列层中的第一或第二线分别连接到半导体基板。通孔连续地形成在多个单元阵列层中，并且具有相同的下端位置和上端位置的多个通孔与不同的单元阵列层中的第一或第二线连接。

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