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71. 发明授权

US09023438B2 Methods and apparatus for combinatorial PECVD or PEALD 有权
标题翻译：组合PECVD或PEALD的方法和装置
公开(公告)号：US09023438B2
公开(公告)日：2015-05-05
申请号：US13716829
申请日：2012-12-17
申请人： Intermolecular, Inc.
发明人： ShouQian Shao , Chi-I Lang , Jingang Su
IPC分类号： H05H1/24 , C23C16/04 , C23C16/455 , C23C16/50 , C23C16/52
CPC分类号： C23C16/45544 , C23C16/04 , C23C16/042 , C23C16/45536 , C23C16/45565 , C23C16/4584 , C23C16/4586 , C23C16/50 , C23C16/52
摘要： Apparatus and methods for depositing materials on a plurality of site-isolated regions on a substrate are provided. The deposition uses PECVD or PEALD. The apparatus include an inner chamber with an aperture and barrier that can be used to isolate the regions during the deposition and prevent the remaining portions of the substrate from being exposed to the deposition process. The process parameters for the deposition process are varied among the site-isolate regions in a combinatorial manner.
摘要翻译：提供了用于在衬底上的多个位置隔离区域上沉积材料的设备和方法。沉积使用PECVD或PEALD。该装置包括具有开口和屏障的内室，其可以用于在沉积期间隔离区域，并且防止基板的剩余部分暴露于沉积工艺。用于沉积过程的工艺参数以组合方式在位点隔离区域之间变化。

72. 发明授权

US09018068B2 Nonvolatile resistive memory element with a silicon-based switching layer 有权
标题翻译：具有硅基开关层的非易失性电阻性存储元件
公开(公告)号：US09018068B2
公开(公告)日：2015-04-28
申请号：US13869800
申请日：2013-04-24
申请人： Intermolecular Inc.
发明人： Randall J. Higuchi , Chien-Lan Hsueh , Yun Wang
IPC分类号： H01L45/00 , H01L27/24 , H01L21/02
CPC分类号： H01L27/2463 , H01L21/0228 , H01L45/04 , H01L45/1233 , H01L45/145 , H01L45/1616
摘要： A nonvolatile resistive memory element includes a novel switching layer and methods of forming the same. The switching layer includes a material having bistable resistance properties and formed by bonding silicon to oxygen or nitrogen. The switching layer may include at least one of SiOx, SiOxNy, or SiNx. Advantageously, the SiOx, SiOxNy, and SiNx generally remain amorphous after thermal anneal processes are used to form the devices, such as ReRAM devices.
摘要翻译：非易失性电阻性存储元件包括新型开关层及其形成方法。开关层包括具有双稳电阻性质并通过将硅键合到氧或氮而形成的材料。开关层可以包括SiO x，SiO x N y或SiN x中的至少一种。有利地，在使用热退火工艺来形成诸如ReRAM器件的器件之后，SiO x，SiO x N y和SiN x通常保持非晶态。

73. 发明授权

US09012881B2 Resistive-switching memory elements having improved switching characteristics 有权
标题翻译：具有改进的开关特性的电阻式开关存储元件
公开(公告)号：US09012881B2
公开(公告)日：2015-04-21
申请号：US14255749
申请日：2014-04-17
申请人： Intermolecular, Inc.
发明人： Ronald J. Kuse , Tony P. Chiang , Imran Hashim
IPC分类号： H01L45/00 , H01L27/01 , H01L27/24
CPC分类号： H01L45/146 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/1616 , H01L45/1641
摘要： Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.
摘要翻译：描述了具有改进的开关特性的电阻式开关存储元件，包括具有第一电极和第二电极的存储元件，第一电极和第二电极之间的开关层，包括氧化铪并具有第一厚度，以及耦合层，所述开关层和所述第二电极，所述耦合层包括包含金属钛并且具有小于所述第一厚度的25％的第二厚度的材料。

74. 发明申请

US20150101683A1 Touchless Site Isolation Using Gas Bearing 审中-公开
标题翻译：使用气体轴承的无触点位置隔离
公开(公告)号：US20150101683A1
公开(公告)日：2015-04-16
申请号：US14576655
申请日：2014-12-19
申请人： Intermolecular, Inc.
发明人： Aaron Francis
IPC分类号： F15D1/00
CPC分类号： F15D1/00 , H01L21/67057 , H01L21/67086 , Y10T137/0318 , Y10T137/2224 , Y10T137/6851
摘要： A gas bearing seal using porous materials for distribution of gas flow can provide site isolation during wet processing. In some embodiments, a flow cell comprises a porous media gas bearing surrounding a periphery of the flow cell, isolating the liquid inside the flow cell from the ambient air outside the flow cell. In some embodiments, a protective chuck comprises a porous media gas bearing disposed in a middle of the protective chuck, isolating the liquid outside the protective chuck with the gaseous ambient generated by the porous media gas bearing.
摘要翻译：使用多孔材料分配气体流量的气体轴承密封可以在湿法加工过程中提供现场隔离。在一些实施例中，流动池包括围绕流动池的周边的多孔介质气体轴承，将流动池内的液体与流动池外部的环境空气隔离。在一些实施例中，保护卡盘包括设置在保护卡盘中间的多孔介质气体轴承，将保护卡盘外部的液体与由多孔介质气体轴承产生的气体环境隔离。

75. 发明授权

US09006696B2 Metal aluminum nitride embedded resistors for resistive random memory access cells 有权
标题翻译：用于电阻式随机存储器存取单元的金属氮化铝嵌入式电阻器
公开(公告)号：US09006696B2
公开(公告)日：2015-04-14
申请号：US14480025
申请日：2014-09-08
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Mihir Tendulkar , Randall J. Higuchi , Chien-Lan Hsueh
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/165 , H01L27/2409 , H01L45/08 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/147 , H01L45/1616 , H01L45/1625
摘要： Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state, thereby preventing over-programming. The embedded resistor includes aluminum, nitrogen, and one or more additional metals (other than aluminum). The concentration of each component is controlled to achieve desired resistivity and stability of the embedded resistor. In some embodiments, the resistivity ranges from 0.1 Ohm-centimeter to 40 Ohm-centimeter and remains substantially constant while applying an electrical field of up 8 mega-Volts/centimeter to the embedded resistor. The embedded resistor may be made from an amorphous material, and the material is operable to remain amorphous even when subjected to typical annealing conditions.
摘要翻译：提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 ReRAM单元包括串联连接的嵌入式电阻和电阻开关层。嵌入式电阻器阻止通过电阻开关层的过多电流，特别是当电阻式开关层切换到其低电阻状态时，从而防止过度编程。嵌入式电阻器包括铝，氮和一种或多种另外的金属（除铝以外）。控制每个组分的浓度以实现嵌入式电阻器的期望的电阻率和稳定性。在一些实施例中，电阻率范围为0.1欧姆至40欧姆厘米，并且在施加高达8兆伏特/厘米的电场到嵌入式电阻器时保持基本恒定。嵌入式电阻器可以由非晶材料制成，并且即使经受典型的退火条件，该材料也可操作以保持非晶态。

76. 发明授权

US09006023B2 Diffusion barrier layer for resistive random access memory cells 有权
标题翻译：用于电阻随机存取存储器单元的扩散势垒层
公开(公告)号：US09006023B2
公开(公告)日：2015-04-14
申请号：US14492363
申请日：2014-09-22
申请人： Intermolecular Inc.
发明人： Yun Wang , Imran Hashim
IPC分类号： H01L29/02 , H01L45/00
CPC分类号： H01L45/146 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/147 , H01L45/16 , H01L45/1608 , H01L45/1616 , H01L45/1625
摘要： Provided are resistive random access memory (ReRAM) cells having diffusion barrier layers formed from various materials, such as beryllium oxide or titanium silicon nitrides. Resistive switching layers used in ReRAM cells often need to have at least one inert interface such that substantially no materials pass through this interface. The other (reactive) interface may be used to introduce and remove defects from the resistive switching layers causing the switching. While some electrode materials, such as platinum and doped polysilicon, may form inert interfaces, these materials are often difficult to integrate. To expand electrode material options, a diffusion barrier layer is disposed between an electrode and a resistive switching layer and forms the inert interface with the resistive switching layer. In some embodiments, tantalum nitride and titanium nitride may be used for electrodes separated by such diffusion barrier layers.
摘要翻译：提供了具有由各种材料形成的扩散阻挡层的电阻随机存取存储器（ReRAM）单元，例如氧化铍或钛硅氮化物。在ReRAM单元中使用的电阻开关层通常需要具有至少一个惰性界面，使得基本上没有材料通过该界面。另一个（反应式）接口可用于引入和去除导致切换的电阻式开关层的缺陷。虽然一些电极材料（例如铂和掺杂多晶硅）可能形成惰性界面，但是这些材料通常难以整合。为了扩大电极材料选择，扩散阻挡层设置在电极和电阻开关层之间，并与电阻式开关层形成惰性界面。在一些实施例中，氮化钽和氮化钛可用于由这种扩散阻挡层分开的电极。

77. 发明申请

US20150091105A1 CONTINUOUS TUNING OF ERBIUM SILICIDE METAL GATE EFFECTIVE WORK FUNCTION VIA A PVD NANOLAMINATE APPROACH FOR MOSFET APPLICATIONS 有权
标题翻译：通过用于MOSFET应用的PVD纳米铝酸盐方法，连续调节硅酸铝金属栅极有效的工作功能
公开(公告)号：US20150091105A1
公开(公告)日：2015-04-02
申请号：US14090822
申请日：2013-11-26
申请人： Intermolecular Inc.
发明人： Zhendong Hong , Ashish Bodke , Olov Karlsson
IPC分类号： H01L29/49 , H01L29/66 , H01L29/78 , H01L21/28
CPC分类号： H01L29/4975 , H01L21/28097 , H01L21/823835 , H01L29/66477 , H01L29/66545 , H01L29/6659 , H01L29/66795 , H01L29/78 , H01L29/7833
摘要： Erbium silicide layers can be used in CMOS transistors in which the work function of the erbium silicide layers can be tuned for use in PMOS and NMOS devices. A nano-laminate sputtering approach can be used in which silicon and erbium layers are alternatingly deposited to determine optimum layer properties, composition profiles, and erbium to silicon ratios for a particular gate stack.
摘要翻译：矽硅化物层可用于CMOS晶体管，其中铒硅化物层的功函数可调谐用于PMOS和NMOS器件。可以使用纳米层压溅射方法，其中交替沉积硅和铒层以确定特定栅极堆叠的最佳层性质，组成分布和铒与硅比。

78. 发明申请

US20150091032A1 Nickel-Titanium and Related Alloys as Silver Diffusion Barriers 审中-公开
标题翻译：镍 - 钛和相关合金作为银扩散壁垒
公开(公告)号：US20150091032A1
公开(公告)日：2015-04-02
申请号：US14136196
申请日：2013-12-20
申请人： Intermolecular, Inc.
发明人： Jianhua Hu , Minh Huu Le , Sandeep Nijhawan , Teresa B. Sapirman
IPC分类号： H01L33/46
CPC分类号： H01L33/405 , H01L33/0095 , H01L2933/0016
摘要： Diffusion of silver from LED reflector layers is blocked by 10-50 nm barrier layers of nickel-titanium (NiTi) alloys. Optionally, the alloys also include one or more of tungsten (W), niobium (Nb), aluminum (Al), vanadium (V), tantalum (Ta), or chromium (Cr). These barriers may omit the noble-metal (e.g., platinum or gold) cap used with silver barriers based on other materials.
摘要翻译：来自LED反射层的银的扩散被镍 - 钛（NiTi）合金的10-50nm阻挡层阻挡。任选地，合金还包括钨（W），铌（Nb），铝（Al），钒（V），钽（Ta）或铬（Cr）中的一种或多种。这些障碍物可以省略基于其它材料与银屏障一起使用的贵金属（例如，铂或金）帽。

79. 发明授权

US08987143B2 Hydrogen plasma cleaning of germanium oxide surfaces 有权
标题翻译：氧化锗表面的氢等离子体清洗
公开(公告)号：US08987143B2
公开(公告)日：2015-03-24
申请号：US14031975
申请日：2013-09-19
申请人： Intermolecular, Inc.
发明人： Ratsamee Limdulpaiboon , Chi-I Lang , Sandip Niyogi , J. Watanabe
IPC分类号： H01L21/302 , H01L21/02 , H01L29/66 , H01L27/146 , H01L21/283 , H01L29/41 , H01L21/3065 , H01L29/778 , H01L29/16
CPC分类号： H01L21/76864 , H01L21/02005 , H01L21/02104 , H01L21/02172 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02205 , H01L21/0228 , H01L21/283 , H01L21/28575 , H01L21/3065 , H01L22/12 , H01L22/14 , H01L27/1462 , H01L27/14643 , H01L27/14698 , H01L29/1606 , H01L29/41 , H01L29/66477 , H01L29/66742 , H01L29/778 , H01L29/786
摘要： Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated hydrogen species. The activated hydrogen species can be used to etch/clean semiconductor oxide surfaces such as silicon oxide or germanium oxide.
摘要翻译：公开了使用远程等离子体源的处理方法和装置。该装置包括封闭衬底支撑件，远程等离子体源和喷头的外室。基板加热器可以安装在基板支撑件中。运输系统移动基板支撑件并且能够定位基板。等离子体系统可用于产生活性氢物质。活化的氢物质可用于蚀刻/清洁半导体氧化物表面，例如氧化硅或氧化锗。

80. 发明授权

US08981332B2 Nonvolatile resistive memory element with an oxygen-gettering layer 有权
公开(公告)号：US08981332B2
公开(公告)日：2015-03-17
申请号：US13838640
申请日：2013-03-15
申请人： Intermolecular Inc.
发明人： Tony P. Chiang , Dipankar Pramanik , Milind Weling
IPC分类号： H01L47/00 , G11C13/00
CPC分类号： H01L45/1253 , G11C13/0002 , G11C13/0007 , G11C2213/15 , G11C2213/33 , G11C2213/34 , G11C2213/52 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/146
摘要： A nonvolatile resistive memory element includes an oxygen-gettering layer. The oxygen-gettering layer is formed as part of an electrode stack, and is more thermodynamically favorable in gettering oxygen than other layers of the electrode stack. The Gibbs free energy of formation (ΔfG°) of an oxide of the oxygen-gettering layer is less (i.e., more negative) than the Gibbs free energy of formation of an oxide of the adjacent layers of the electrode stack. The oxygen-gettering layer reacts with oxygen present in the adjacent layers of the electrode stack, thereby preventing this oxygen from diffusing into nearby silicon layers to undesirably increase an SiO2 interfacial layer thickness in the memory element and may alternately be selected to decrease such thickness during subsequent processing.

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