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71. 发明授权

US07470473B2 Nanocrystal structures 有权
标题翻译：纳米晶体结构
公开(公告)号：US07470473B2
公开(公告)日：2008-12-30
申请号：US11594732
申请日：2006-11-09
申请人： Hans J. Eisler , Vikram C. Sundar , Michael E. Walsh , Victor I. Klimov , Moungi G. Bawendi , Henry I. Smith
发明人： Hans J. Eisler , Vikram C. Sundar , Michael E. Walsh , Victor I. Klimov , Moungi G. Bawendi , Henry I. Smith
IPC分类号： B32B9/00
CPC分类号： C30B29/605 , C30B5/00 , G02B6/122 , H01L21/02381 , H01L21/0242 , H01L21/0243 , H01L21/02521 , H01L21/02601 , H01L29/06 , H01L29/20 , H01L29/22 , H01L29/26 , Y10S977/813 , Y10T428/12528 , Y10T428/24917 , Y10T428/252 , Y10T428/31678
摘要： A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
摘要翻译：在光栅上包括光栅和半导体纳米晶体层的结构可以是激光。半导体纳米晶体层可以包括多个包括II-VI族化合物的半导体纳米晶体，纳米晶体分布在金属氧化物基质中。光栅可以具有从200nm到500nm的周期。

72. 发明申请

US20080296785A1 Method of forming catalyst nanoparticles for nanowire growth and other applications 审中-公开
公开(公告)号：US20080296785A1
公开(公告)日：2008-12-04
申请号：US12150063
申请日：2008-04-23
申请人： Theodore I. Kamins , Philip J. Kuekes , Yong Chen
发明人： Theodore I. Kamins , Philip J. Kuekes , Yong Chen
IPC分类号： H01L23/48
CPC分类号： B82Y30/00 , B82Y10/00 , C30B11/00 , C30B11/12 , C30B29/605 , H01L2924/0002 , H01L2924/00
摘要： Methods for forming a predetermined pattern of catalytic regions having nanoscale dimensions are provided for use in the growth of nanowires. The methods include one or more nanoimprinting steps to produce arrays of catalytic nanoislands or nanoscale regions of catalytic material circumscribed by noncatalytic material.

73. 发明授权

US07393410B2 Method of manufacturing nano-wire 失效
标题翻译：制造纳米线的方法
公开(公告)号：US07393410B2
公开(公告)日：2008-07-01
申请号：US11114196
申请日：2005-04-26
申请人： Sang-Hyun Lee , Tae-Won Jeong , Jeong-Na Huh
发明人： Sang-Hyun Lee , Tae-Won Jeong , Jeong-Na Huh
IPC分类号： C30B25/00 , C30B29/66
CPC分类号： C30B25/18 , C30B25/02 , C30B29/605 , Y10S977/813 , Y10S977/814 , Y10S977/825
摘要： There is provided a method of manufacturing a nano-wire using a crystal structure. In the method of manufacturing a nano-wire, a crystal grain having a plurality of crystal faces is used as a seed, and a crystal growing material having a lattice constant difference within a predetermined range is deposited on the crystal grain, thereby allowing the nano-wire to grow from at least one of the crystal faces. Therefore, it is possible to give the positional selectivity with a simple process using a principle of crystal growth and to generate a nano-structure such as a nano-wire, etc. having good crystallinity. Further, it is possible to generate a different-kind junction structure having various shapes by adjusting a feature of a crystal used as a seed.
摘要翻译：提供了使用晶体结构制造纳米线的方法。在制造纳米线的方法中，使用具有多个晶面的晶粒作为种子，并且在晶粒上沉积具有规定范围内的晶格常数差的晶体生长材料，由此使纳米线从至少一个晶面生长。因此，可以通过使用晶体生长原理的简单工艺来产生位置选择性，并且可以产生具有良好结晶度的纳米线等纳米结构。此外，通过调整用作种子的晶体的特征，可以生成具有各种形状的不同种类的连接结构。

74. 发明授权

US07390568B2 Semiconductor nanocrystal heterostructures having specific charge carrier confinement 有权
标题翻译：具有特定电荷载流子限制的半导体纳米晶体异质结构
公开(公告)号：US07390568B2
公开(公告)日：2008-06-24
申请号：US10638546
申请日：2003-08-12
申请人： Sungjee Kim , Moungi G. Bawendi
发明人： Sungjee Kim , Moungi G. Bawendi
IPC分类号： B32B5/16
CPC分类号： G01N33/588 , B82Y10/00 , B82Y15/00 , B82Y20/00 , B82Y30/00 , C09K11/883 , C30B7/00 , C30B29/605 , C30B33/00 , H01L21/0237 , H01L21/02409 , H01L21/02411 , H01L21/02521 , H01L21/0256 , H01L21/02562 , H01L21/02601 , H01L29/0665 , H01L29/0673 , H01L29/165 , H01L29/205 , H01L29/225 , H01L29/267 , H01L51/426 , Y02E10/549 , Y10S977/773 , Y10S977/774 , Y10S977/777 , Y10S977/811 , Y10T428/12021 , Y10T428/12528 , Y10T428/12986 , Y10T428/294 , Y10T428/2991 , Y10T428/315
摘要： A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.
摘要翻译：半导体纳米晶体异质结构具有由第二半导体材料的外涂层包围的第一半导体材料的芯。在激发时，一个载体可以基本上限于核心，另一个载体可以基本上局限于外涂层。

75. 发明授权

US07364714B2 3C-SIC nanowhisker and synthesizing method and 3C-SIC nanowhisker 失效
标题翻译： 3C-SIC纳米晶须及其合成方法和3C-SIC纳米晶须
公开(公告)号：US07364714B2
公开(公告)日：2008-04-29
申请号：US10481578
申请日：2002-06-21
申请人： Toshihiro Ando , Mika Gamo , Yafei Zhang
发明人： Toshihiro Ando , Mika Gamo , Yafei Zhang
IPC分类号： C01B31/36
CPC分类号： B82Y30/00 , C01B32/956 , C01P2002/72 , C01P2002/80 , C01P2004/04 , C01P2004/16 , C01P2004/51 , C01P2004/64 , C30B11/00 , C30B25/005 , C30B25/105 , C30B29/36 , C30B29/605 , C30B29/62 , Y10S423/10 , Y10T428/259 , Y10T428/2993
摘要： 3C—SiC nanowhisker and a method of synthesizing 3C—SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C—SiC nanowhisker is formed by depositing thin film (2) made of a metal element on Si substrate (1), placing this Si substrate (1) into a plasma CVD apparatus, and holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate (1) and C in plasma dissolve at supersaturation into metal liquid particle (3), 3C—SiC nanowhisker (4) grows on the metal liquid particles (3), whisker surface is terminated with H so as to maintain the diameter constant, and the metal liquid particles (3) at whisker root take in Si from Si substrate (1) and penetrate into Si substrate (1).
摘要翻译： 3C-SiC纳米晶须及其可以控制其直径和长度的3C-SiC纳米晶须的合成方法。该方法安全，成本低，晶须可以发出各种波长的可见光。通过在Si衬底（1）上沉积由金属元素制成的薄膜（2）来形成3C-SiC纳米晶须，将该Si衬底（1）放置在等离子体CVD装置中，并在预定的衬底温度下将其保持在预定时间由氢和烃组成的等离子体。 Si衬底（1）的Si和等离子体中的C在过饱和时溶解成金属液体颗粒（3），3C-SiC纳米晶须（4）在金属液体颗粒（3）上生长，晶须表面用H终止，以保持直径常数，晶须根部的金属液体颗粒（3）从Si基板（1）吸收Si并渗入Si基板（1）。

76. 发明申请

US20080064788A1 High refractive index crystalline colloidal arrays materials and a process for making the same 有权
$High refractive index crystalline colloidal arrays materials and a process for making the same$
标题翻译：高折射率晶体胶体阵列材料及其制备方法
公开(公告)号：US20080064788A1
公开(公告)日：2008-03-13
申请号：US11888274
申请日：2007-07-31
申请人： Matti Ben-Moshe , Sanford Asher , Dan Qu , Jla Luo
发明人： Matti Ben-Moshe , Sanford Asher , Dan Qu , Jla Luo
IPC分类号： C08K9/06 , C01G9/08 , C08K9/04
CPC分类号： C30B5/00 , B01J13/16 , B82Y30/00 , C01G9/02 , C01G9/08 , C01P2004/32 , C01P2004/64 , C01P2004/84 , C01P2006/40 , C30B29/48 , C30B29/605
摘要： Disclosed are a new composite material and a process for synthesizing highly charged, highly monodisperse, core-shell particles with high refractive index cores, as well as stable, long lasting crystalline colloidal arrays (CCAs) formed thereof. A preferred embodiment of the core particle can be highly monodisperse zinc sulfide (ZnS) particles and a preferred embodiment of the shell can be highly charged polyelectrolytes. The CCAs formed thereof are charge stabilized photonic crystals that shows distinctive first and second order Bragg diffraction peaks whose locations vary over a wide spectral region from UV through visible to IR, with unusually strong intensity and broad band width due to the high index of refraction. These high refractive index particles are useful in applications such as optical filters, optical coatings, cosmetics and photonic crystals sensors and devices.
摘要翻译：公开了一种新的复合材料和用于合成具有高折射率芯的高电荷，高度单分散的核 - 壳颗粒以及由其形成的稳定的，持久的结晶胶体阵列（CCA）的方法。核心颗粒的优选实施方案可以是高度单分散的硫化锌（ZnS）颗粒，并且壳的优选实施方案可以是高度带电的聚电解质。由其形成的CCA是电荷稳定的光子晶体，其显示了不同的第一和第二布拉格衍射峰，其位置在从UV到可见光到IR的宽光谱区域上变化，由于高的折射率，具有非常强的强度和宽的带宽。这些高折射率颗粒可用于诸如光学滤光器，光学涂层，化妆品和光子晶体传感器和装置的应用中。

77. 发明授权

US07339184B2 Systems and methods for harvesting and integrating nanowires 有权
标题翻译：用于收获和整合纳米线的系统和方法
公开(公告)号：US07339184B2
公开(公告)日：2008-03-04
申请号：US11117707
申请日：2005-04-29
申请人： Linda T. Romano , Jian Chen , Xiangfeng Duan , Robert S. Dubrow , Stephen A. Empedocles , Jay L. Goldman , James M. Hamilton , David L. Heald , Francesco Lemmi , Chunming Niu , Yaoling Pan , George Pontis , Vijendra Sahi , Erik C. Scher , David P. Stumbo , Jeffery A. Whiteford
发明人： Linda T. Romano , Jian Chen , Xiangfeng Duan , Robert S. Dubrow , Stephen A. Empedocles , Jay L. Goldman , James M. Hamilton , David L. Heald , Francesco Lemmi , Chunming Niu , Yaoling Pan , George Pontis , Vijendra Sahi , Erik C. Scher , David P. Stumbo , Jeffery A. Whiteford
IPC分类号： H01L29/00
CPC分类号： C30B29/605 , B82Y10/00 , C30B11/12 , H01L21/02439 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/02603 , H01L21/02606 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L29/66469 , H01L29/775 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0048 , Y10S977/762 , Y10S977/938 , Y10T428/139 , Y10T428/2902 , Y10T428/2949
摘要： The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.
摘要翻译：本发明涉及收获，整合和利用纳米材料，特别是细长的纳米线材料的方法。本发明提供了收获纳米线的方法，其包括选择性地蚀刻放置在纳米线生长衬底上以去除纳米线的牺牲层。本发明还提供了将纳米线整合到电子器件中的方法，包括将圆筒的外表面与纳米线的流体悬浮液接触并滚动纳米线涂覆的圆筒以将纳米线沉积到表面上。还提供了使用喷墨打印机或孔径以纳米线排列纳米线的方法。本发明的另外的方面提供了用于防止基于纳米线的晶体管中的栅极短路的方法。提供了收获和集成纳米线的其他方法。

78. 发明授权

US07303815B2 Functional bimorph composite nanotapes and methods of fabrication 失效
标题翻译：功能双压电晶片复合纳米管及其制造方法
公开(公告)号：US07303815B2
公开(公告)日：2007-12-04
申请号：US10642043
申请日：2003-08-15
申请人： Peidong Yang , Matthew Law , Rongrui He , Rong Fan , Franklin Kim
发明人： Peidong Yang , Matthew Law , Rongrui He , Rong Fan , Franklin Kim
IPC分类号： B32B15/04 , G01K5/68
CPC分类号： B81B3/0035 , B82Y20/00 , B82Y25/00 , B82Y30/00 , C30B23/00 , C30B29/605 , H01L21/02414 , H01L21/02428 , H01L21/02521 , H01L21/02554 , H01L21/02565 , H01L21/02581 , H01L21/0259 , H01L21/02631 , Y10S977/755 , Y10S977/81 , Y10S977/811 , Y10T428/125 , Y10T428/29 , Y10T428/2973 , Y10T428/298
摘要： A two-layer nanotape that includes a nanoribbon substrate and an oxide that is epitaxially deposited on a flat surface of the nanoribbon substrate is described. The oxide is deposited on the substrate using a pulsed laser ablation deposition process. The nanoribbons can be made from materials such as SnO2, ZnO, MgO, Al2O3, Si, GaN, or CdS. Also, the sintered oxide target can be made from materials such as TiO2, transition metal doped TiO2 (e.g., CO0.05Ti0.95O2), BaTiO3, ZnO, transition metal doped ZnO (e.g., Mn0.1Zn0.9O and Ni0.1Zn0.9O), LaMnO3, BaTiO3, PbTiO3, YBa2Cu3Oz, or SrCu2O2 and other p-type oxides. Additionally, temperature sensitive nanoribbon/metal bilayers and their method of fabrication by thermal evaporation are described. Metals such as Cu, Au, Ti, Al, Pt, Ni and others can be deposited on top of the nanoribbon surface. Such devices bend significantly as a function of temperature and are suitable as, for example, thermally activated nanoscale actuators.
摘要翻译：描述了包括纳米薄片基底和外延沉积在纳米薄片的平坦表面上的氧化物的双层纳米线。氧化物使用脉冲激光烧蚀沉积工艺沉积在衬底上。纳米带可以由诸如SnO 2，ZnO，MgO，Al 2 O 3 3，Si，GaN或CdS的材料制成。此外，烧结氧化物靶可以由诸如TiO 2，过渡金属掺杂的TiO 2（例如，CO <0.05> Ti 3 ，YBa 2，3 3 或SrCu 2 O 2 和/或其它p型氧化物。另外，描述了温度敏感的纳米棒/金属双层及其通过热蒸发制造的方法。诸如Cu，Au，Ti，Al，Pt，Ni等的金属可以沉积在纳米棒表面的顶部。这样的装置作为温度的函数显着弯曲，并且适合于例如热活化的纳米级致动器。

79. 发明授权

US07294165B2 Method of forming nano-crystalline structures and product formed thereof 有权
标题翻译：形成纳米晶体结构的方法及其形成的产品
公开(公告)号：US07294165B2
公开(公告)日：2007-11-13
申请号：US10707999
申请日：2004-01-30
申请人： Srinivasan Chandrasekar , Walter D. Compton , Thomas N. Farris , Kevin P. Trumble
发明人： Srinivasan Chandrasekar , Walter D. Compton , Thomas N. Farris , Kevin P. Trumble
IPC分类号： B22F8/00
CPC分类号： B82Y30/00 , B22F1/0018 , B22F1/0044 , B22F9/005 , B22F9/04 , B22F2001/0033 , B22F2998/00 , B22F2999/00 , C04B20/026 , C04B35/622 , C04B2235/5454 , C04B2235/78 , C04B2235/781 , C04B2235/785 , C22C49/14 , C30B29/605 , C30B33/00 , Y10S75/954 , Y10S241/14 , C04B20/008 , B22F2009/046 , C22C1/1036 , B22F1/0003 , B22F3/10 , B22F3/20 , B22F3/26 , B22F1/0025
摘要： A product in which at least a portion of the product has a nanocrystalline microstructure, and a method of forming the product. The method generally entails machining a body in a manner that produces chips consisting entirely of nano-crystals as a result of the machining operation imposing a sufficiently large strain deformation. The body can be formed of a variety of materials, including metal, metal alloy and ceramic materials. Furthermore, the body may have a microstructure that is essentially free of nano-crystals, and may even have a single-crystal microstructure. The chips produced by the machining operation may be in the form of particulates, ribbons, wires, filaments and/or platelets. The chips are then used to form the product. According to one aspect of the invention, the chips are consolidated to form the product, such that the product is a monolithic material that may contain nano-crystals. According to another aspect of the invention, the chips are dispersed in a matrix material, such that the product is a composite material in which the chips serve as a reinforcement material.
摘要翻译：其中至少一部分产品具有纳米晶体微结构的产品，以及形成该产品的方法。该方法通常需要以通过施加足够大的应变变形的加工操作的结果产生完全由纳米晶体组成的芯片的方式来加工主体。身体可以由各种材料形成，包括金属，金属合金和陶瓷材料。此外，主体可以具有基本上不含纳米晶体的微结构，并且甚至可以具有单晶微结构。通过加工操作生产的碎屑可以是颗粒，带状物，丝，丝和/或血小板的形式。然后将芯片用于形成产品。根据本发明的一个方面，将芯片固结形成产品，使得该产品是可以包含纳米晶体的整体材料。根据本发明的另一方面，芯片分散在基质材料中，使得该产品是其中芯片用作增强材料的复合材料。

80. 发明授权

US07276285B2 Nanotube fabrication basis 失效
标题翻译：纳米管制造基础
公开(公告)号：US07276285B2
公开(公告)日：2007-10-02
申请号：US10749637
申请日：2003-12-31
申请人： Barrett E. Cole , Robert E. Higashi
发明人： Barrett E. Cole , Robert E. Higashi
IPC分类号： B32B9/00
CPC分类号： C30B29/605 , B82Y30/00 , B82Y40/00 , C01B32/162 , Y10S977/742 , Y10T428/30
摘要： A structure having a substrate, patterned metal layer and a catalyst island formed on the metal layer. The surface of the substrate upon which the metal layer is formed may be oxidized. As an illustrative example, the metal may be HfN and the catalyst island may be iron, nickel, or the like. The resulting structure may be placed in an environment having a carbon-containing gas, a temperature between 500 and 1200 degrees C., and an electric field. A nanotube may grow from the catalyst island. A method including the combining of hafnium and nitrogen may be used to make the nanotube growing structure.
摘要翻译：具有形成在金属层上的基板，图案化金属层和催化剂岛的结构。形成有金属层的基板的表面可能被氧化。作为说明性实例，金属可以是HfN，催化剂岛可以是铁，镍等。所得到的结构可以放置在具有含碳气体，温度在500和1200摄氏度之间的电场和电场中。纳米管可以从催化剂岛生长。可以使用包括铪和氮的组合的方法来制造纳米管生长结构。

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