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1. 发明授权

US09680039B2 Nanostructures and methods for manufacturing the same 有权
公开(公告)号：US09680039B2
公开(公告)日：2017-06-13
申请号：US14300614
申请日：2014-06-10
申请人： QuNano AB
发明人： Lars Ivar Samuelson , Bjorn Jonas Ohlsson
IPC分类号： H01L31/0352 , B82Y10/00 , C30B11/00 , C30B11/12 , C30B25/00 , C30B25/02 , C30B25/14 , C30B25/18 , C30B29/40 , C30B29/60 , H01L29/06 , H01L29/20 , H01L29/66 , H01L29/737 , H01L29/88 , H01L33/04 , H01L31/0224 , H01L31/048 , H01L31/068
CPC分类号： H01L31/035227 , B82Y10/00 , C30B11/00 , C30B11/12 , C30B25/00 , C30B25/02 , C30B25/14 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , C30B29/605 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/20 , H01L29/66318 , H01L29/7371 , H01L29/882 , H01L31/022466 , H01L31/048 , H01L31/068 , H01L33/04 , Y02E10/547 , Y10S977/762 , Y10S977/763
摘要： A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.

2. 发明申请

US20170114454A1 METHOD FOR PRODUCING SILICON NANOWIRES 审中-公开
公开(公告)号：US20170114454A1
公开(公告)日：2017-04-27
申请号：US15316913
申请日：2015-06-12
申请人： Commissariat A L'energie Atomique Et Aux Energies Alternatives
发明人： Pascale Chenevier , Peter Reiss , Olga Burchak
IPC分类号： C23C16/24 , C23C16/01 , C23C16/44 , H01G11/30 , H01M10/0525 , C30B25/00 , C30B29/06 , C30B29/62 , C01B33/029 , H01M4/38
CPC分类号： C23C16/24 , B82Y40/00 , C01B33/027 , C01B33/029 , C01P2004/16 , C01P2006/40 , C23C16/01 , C23C16/44 , C30B11/12 , C30B25/005 , C30B29/06 , C30B29/60 , C30B29/62 , H01G11/30 , H01M4/386 , H01M10/052 , H01M10/0525 , Y02E60/13
摘要： A method for producing a material based on silicon nanowires is provided. The method includes the steps of: i) bringing into contact, in an inert atmosphere, a sacrificial support based on a halogenide, a carbonate, a sulfate or a nitrate of an alkali metal, an alkaline earth metal or a transition metal having metal nanoparticles, with the pyrolysis vapours of a silicon source having a silane compound, by which silicon nanowires are deposited on the sacrificial support; and optionally ii) eliminating the sacrificial support and recovering the silicon nanowires produced in step ii).

3. 发明授权

US09632190B2 Neutron imaging systems utilizing lithium-containing semiconductor crystals 有权
公开(公告)号：US09632190B2
公开(公告)日：2017-04-25
申请号：US14230372
申请日：2014-03-31
申请人： Ashley C. Stowe , Arnold Burger
发明人： Ashley C. Stowe , Arnold Burger
IPC分类号： G01N23/04 , G01T3/08 , C30B11/12 , C30B11/06 , C30B29/46 , G01N23/05
CPC分类号： G01T3/08 , C30B11/06 , C30B11/12 , C30B29/46 , G01N23/046 , G01N23/05
摘要： A neutron imaging system, including: a plurality of Li-III-VI2 semiconductor crystals arranged in an array, wherein III represents a Group III element and VI represents a Group VI element; and electronics operable for detecting and a charge in each of the plurality of crystals in the presence of neutrons and for imaging the neutrons. Each of the crystals is formed by: melting the Group III element; adding the Li to the melted Group III element at a rate that allows the Li and Group III element to react, thereby providing a single phase Li-III compound; and adding the Group VI element to the single phase Li-III compound and heating. Optionally, each of the crystals is also formed by doping with a Group IV element activator.

4. 发明授权

US09574286B2 Concentric flower reactor 有权
标题翻译：同心花反应堆
公开(公告)号：US09574286B2
公开(公告)日：2017-02-21
申请号：US14403427
申请日：2013-05-24
申请人： SOL VOLTAICS AB
发明人： Greg Alcott , Martin Magnusson , Olivier Postel , Knut Deppert , Lars Samuelson , Jonas Ohlsson
IPC分类号： C30B25/00 , C30B25/02 , C30B29/06 , C30B29/40 , C30B11/00 , C30B11/12 , C30B29/62 , C30B29/60
CPC分类号： C30B25/14 , C23C16/301 , C23C16/45504 , C23C16/45519 , C30B11/003 , C30B11/006 , C30B11/12 , C30B23/007 , C30B25/005 , C30B25/025 , C30B29/06 , C30B29/40 , C30B29/403 , C30B29/42 , C30B29/60 , C30B29/62 , Y10T117/102
摘要： A gas phase nanowire growth apparatus including a reaction chamber (200), a first input and a second input (202 B, 202 A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.
摘要翻译：一种气相纳米线生长装置，包括反应室（200），第一输入端和第二输入端（202B，202A）。所述第一输入同心地位于所述第二输入内，并且所述第一和第二输入被配置为使得从所述第二输入端递送的第二流体在从所述第一输入端输送的第一流体与所述反应室的壁之间提供护套。可以使用催化剂颗粒的气溶胶来生长纳米线。

5. 发明申请

US20160370477A1 NEUTRON IMAGING SYSTEMS UTILIZING LITHIUM-CONTAINING SEMICONDUCTOR CRYSTALS 有权
标题翻译：使用含锂的半导体晶体的中子成像系统
公开(公告)号：US20160370477A1
公开(公告)日：2016-12-22
申请号：US14230372
申请日：2014-03-31
申请人： FISK UNIVERSITY , BABCOCK & WILCOX TECHNICAL SERVICES Y-12, L.L.C., Attn: Mike Renner
发明人： Ashley C. Stowe , Arnold Burger
IPC分类号： G01T3/08 , G01N23/05 , G01N23/04
CPC分类号： G01T3/08 , C30B11/06 , C30B11/12 , C30B29/46 , G01N23/046 , G01N23/05
摘要： A neutron imaging system, including: a plurality of Li-III-VI2 semiconductor crystals arranged in an array, wherein III represents a Group III element and VI represents a Group VI element; and electronics operable for detecting and a charge in each of the plurality of crystals in the presence of neutrons and for imaging the neutrons. Each of the crystals is formed by: melting the Group III element; adding the Li to the melted Group III element at a rate that allows the Li and Group III element to react, thereby providing a single phase Li-III compound; and adding the Group VI element to the single phase Li-III compound and heating. Optionally, each of the crystals is also formed by doping with a Group IV element activator.
摘要翻译：一种中子成像系统，包括：排列成阵列的多个Li-III-VI2半导体晶体，其中III表示III族元素，VI表示VI族元素; 以及电子器件，其可操作以在存在中子的情况下检测多个晶体中的每个晶体中的电荷并对中子进行成像。每个晶体通过以下方式形成：熔融III族元素; 以允许Li和III族元素反应的速率将Li添加到熔融的III族元素中，从而提供单相Li-III化合物; 并将VI族元素加入到单相Li-III化合物中并加热。任选地，每个晶体也通过掺杂IV族元素活化剂形成。

6. 发明授权

US09334581B2 Methods for synthesizing semiconductor quality chalcopyrite crystals for nonlinear optical and radiation detection applications and the like 有权
标题翻译：用于合成用于非线性光学和辐射检测应用的半导体质量黄铜矿晶体的方法等
公开(公告)号：US09334581B2
公开(公告)日：2016-05-10
申请号：US13658591
申请日：2012-10-23
申请人： BACOCK & WILCOX TECHNICAL SERVICES Y-12, L.L.C. , FISK UNIVERSITY
发明人： Ashley Stowe , Arnold Burger
IPC分类号： C30B11/08 , C30B11/12 , C30B29/46
CPC分类号： G01T3/08 , C30B11/06 , C30B11/12 , C30B29/46 , G01N23/046 , G01N23/05
摘要： A method for synthesizing I-III-VI2 compounds, including: melting a Group III element; adding a Group I element to the melted Group III element at a rate that allows the Group I and Group III elements to react thereby providing a single phase I-III compound; and adding a Group VI element to the single phase I-III compound under heat, with mixing, and/or via vapor transport. The Group III element is melted at a temperature of between about 200 degrees C. and about 700 degrees C. Preferably, the Group I element consists of a neutron absorber and the group III element consists of In or Ga. The Group VI element and the single phase I-III compound are heated to a temperature of between about 700 degrees C. and about 1000 degrees C. Preferably, the Group VI element consists of S, Se, or Te. Optionally, the method also includes doping with a Group IV element activator.
摘要翻译：一种合成I-III-VI2化合物的方法，包括：熔融III族元素; 以熔化的III族元素以允许I族和III族元素反应从而提供单相I-III化合物的速率加入I族元素; 并在加热下，混合和/或通过蒸汽输送将VI族元素加入到单相I-III化合物中。 III族元素在约200摄氏度和约700摄氏度之间的温度下熔化。优选地，第I族元素由中子吸收剂组成，III族元素由In或Ga组成，VI族元素和单相I-III化合物被加热到约700℃至约1000℃的温度。优选地，第VI族元素由S，Se或Te组成。任选地，该方法还包括掺杂IV族元素活化剂。

7. 发明申请

US20150378031A1 VISIBLE SCINTILLATION PHOTODETECTOR DEVICE INCORPORATING CHALCOPYRITE SEMICONDUCTOR CRYSTALS 有权
标题翻译：包含铬酸盐玻璃半导体晶体的可见光照相器件
公开(公告)号：US20150378031A1
公开(公告)日：2015-12-31
申请号：US14843150
申请日：2015-09-02
申请人： Ashley C. STOWE , Arnold BURGER
发明人： Ashley C. STOWE , Arnold BURGER
IPC分类号： G01T1/20
CPC分类号： G01T1/20 , C30B11/06 , C30B11/12 , C30B29/46
摘要： A photodetector device, including: a scintillator material operable for receiving incident radiation and emitting photons in response; a photodetector material coupled to the scintillator material operable for receiving the photons emitted by the scintillator material and generating a current in response, wherein the photodetector material includes a chalcopyrite semiconductor crystal; and a circuit coupled to the photodetector material operable for characterizing the incident radiation based on the current generated by the photodetector material. Optionally, the scintillator material includes a gamma scintillator material and the incident radiation received includes gamma rays. Optionally, the photodetector material is further operable for receiving thermal neutrons and generating a current in response. The circuit is further operable for characterizing the thermal neutrons based on the current generated by the photodetector material.
摘要翻译：一种光检测器装置，包括：闪烁体材料，其可操作用于接收入射辐射并响应于发射光子; 耦合到所述闪烁体材料的光电检测器材料，其可操作用于接收由所述闪烁体材料发射的光子并产生响应的电流，其中所述光电检测器材料包括黄铜矿半导体晶体; 以及耦合到所述光电检测器材料的电路，其可操作以基于由所述光电检测器材料产生的电流来表征所述入射辐射。可选地，闪烁体材料包括伽马闪烁体材料，并且所接收的入射辐射包括伽马射线。可选地，光电检测器材料还可操作用于接收热中子并产生响应的电流。该电路还可操作用于基于由光电检测器材料产生的电流来表征热中子。

8. 发明申请

US20140230720A1 Direct band gap wurtzite semiconductor nanowires 有权
标题翻译：直接带隙纤锌矿半导体纳米线
公开(公告)号：US20140230720A1
公开(公告)日：2014-08-21
申请号：US14184085
申请日：2014-02-19
申请人： Technische Universiteit Eindhoven
发明人： Simone Assali , Ilaria Zardo , Jozef Everardus Maria Haverkort , Erik Petrus Antonius Maria Bakkers
IPC分类号： C30B11/12 , C30B25/00 , C30B23/00
CPC分类号： C30B11/12 , C30B23/007 , C30B25/005 , C30B29/40 , C30B29/44 , C30B29/605
摘要： Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.
摘要翻译：提供GaP和III-V GaP合金通过气相外延（VPE）在纤锌矿晶体结构中的生长。这种材料具有直接的带隙，因此与具有闪锌矿晶体结构且具有间接带隙的常规GaP和GaP合金相比，对于光电子器件更有用。

9. 发明申请

US20140206126A1 METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON 审中-公开
标题翻译：在玻璃基材上生长异质单晶或大颗粒半导体膜的方法及其设备
公开(公告)号：US20140206126A1
公开(公告)日：2014-07-24
申请号：US14224675
申请日：2014-03-25
申请人： Karin Chaudhari , Pia Chaudhari , Ashok Chaudhari
发明人： Praveen Chaudhari
IPC分类号： H01L21/02
CPC分类号： H01L31/1804 , C30B11/12 , C30B23/025 , C30B25/02 , C30B25/183 , C30B29/06 , H01L21/02422 , H01L21/02425 , H01L21/02439 , H01L21/02488 , H01L21/02532 , H01L21/02546 , H01L21/02557 , H01L21/0256 , H01L21/02595 , H01L21/02598 , H01L21/02603 , H01L21/0262 , H01L21/02623 , H01L21/02625 , H01L21/02645 , H01L21/02653 , H01L31/0216 , H01L31/02363 , H01L31/02366 , H01L31/0475 , H01L31/0687 , H01L31/0725 , H01L31/18
摘要： A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.
摘要翻译：公开了从包含金属和半导体的共晶合金制造半导体膜的方法。通过非均相成核，所述膜在相对便宜的缓冲基底（例如玻璃）上以沉积温度沉积。具体地说，所述膜在所述沉积温度下以固定温度气相沉积，其中所述沉积温度高于所述共晶合金的共晶温度，并低于衬底软化的温度。这样的电影可以广泛应用于光伏和显示技术。

10. 发明申请

US20140030549A1 GROUP III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL 审中-公开
标题翻译：第三类元素氮化物晶体生产方法和第三类元素氮化物晶体
公开(公告)号：US20140030549A1
公开(公告)日：2014-01-30
申请号：US14041366
申请日：2013-09-30
申请人： Osamu Yamada , Hisashi Minemoto , Kouichi Hiranaka , Takeshi Hatakeyama , Takamoto Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
发明人： Osamu Yamada , Hisashi Minemoto , Kouichi Hiranaka , Takeshi Hatakeyama , Takamoto Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
IPC分类号： H01L31/0304 , C30B29/40 , G02B1/02
CPC分类号： H01L31/03044 , C30B9/10 , C30B11/12 , C30B19/02 , C30B29/403 , C30B29/406 , G02B1/02
摘要： A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.
摘要翻译：提供了以高晶体生长速度生产高质量III族元素氮化物晶体的方法和III族元素氮化物晶体。该方法包括以下步骤：将III族元素，碱金属和III族元素氮化物的晶种放置在晶体生长容器中，在含氮气体的气氛中加压和加热晶体生长容器，导致III族元素和氮在III族元素，碱金属和氮的熔体中彼此反应，从而使用晶种作为核生长III族元素氮化物晶体。在晶体生长容器的加压和加热之前，加入沸点高于碱金属的熔点的烃。

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