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71. 发明申请

US20110115043A1 SOLID-STATE IMAGE SENSOR AND IMAGING DEVICE 有权
标题翻译：固态图像传感器和成像装置
公开(公告)号：US20110115043A1
公开(公告)日：2011-05-19
申请号：US12948357
申请日：2010-11-17
申请人： Takuya TAKATA
发明人： Takuya TAKATA
IPC分类号： H01L31/112 , H01L31/0224
CPC分类号： H01L27/14603 , H01L27/14609 , H04N5/2253 , H04N5/335 , H04N5/3698
摘要： According to an aspect of the invention, a solid-state image sensor having a plurality of pixels includes a plurality of lower electrode, a photoelectric conversion layer, an upper electrode, a wiring portion and a plurality of connection portions. The plurality of lower electrodes respectively corresponds to the plurality of pixels. The photoelectric conversion layer is stacked on the lower electrodes. The upper electrode is stacked on the photoelectric conversion layer. The wiring portion supplies, to the upper electrode, a voltage to generate an electric field between the upper electrode and the lower electrode. The plurality of connection portions connects the wiring portion and the upper electrode. The plurality of connection portions are disposed in a circumference region which is a region other than a sensor region in which a plurality of photoelectric conversion elements are arranged. The plurality of connection portions is disposed in a symmetrical arrangement.
摘要翻译：根据本发明的一个方面，具有多个像素的固态图像传感器包括多个下电极，光电转换层，上电极，布线部分和多个连接部分。多个下电极分别对应于多个像素。光电转换层堆叠在下电极上。上电极堆叠在光电转换层上。布线部向上部电极供给在上部电极和下部电极之间产生电场的电压。多个连接部分连接布线部分和上部电极。多个连接部设置在除了多个光电转换元件配置的传感器区域以外的区域的周边区域中。多个连接部分以对称的布置设置。

72. 发明申请

US20110114846A1 RADIATION IMAGING APPARATUS AND RADIATION IMAGING SYSTEM 有权
标题翻译：辐射成像装置和辐射成像系统
公开(公告)号：US20110114846A1
公开(公告)日：2011-05-19
申请号：US13010226
申请日：2011-01-20
申请人： Chiori Mochizuki , Minoru Watanabe , Takamasa Ishii , Masakazu Morishita
发明人： Chiori Mochizuki , Minoru Watanabe , Takamasa Ishii , Masakazu Morishita
IPC分类号： G01T1/24 , H01L31/112
CPC分类号： G01T1/241 , H01L27/14632 , H01L27/14658 , H01L27/14659 , H01L27/14663
摘要： A radiation imaging apparatus comprises a pixel region, on an insulating substrate 100, including a plurality of pixels arranged in a matrix, each pixel having a conversion element 101 that converts radiation into electric charges and a switching element 102 connected to the conversion element 101. The conversion element 101 has an upper electrode layer 119, a lower electrode layer 115, a semiconductor layer 117 arranged between the upper electrode layer 119 and the lower electrode layer 115. The upper electrode layer 119 or the lower electrode layer 115 has an opening 200 at least within a region where the semiconductor layer 117 is arranged.
摘要翻译：辐射成像装置包括在绝缘基板100上的像素区域，该像素区域包括排列成矩阵的多个像素，每个像素具有将辐射转换成电荷的转换元件101和连接到转换元件101的开关元件102。转换元件101具有上电极层119，下电极层115，布置在上电极层119和下电极层115之间的半导体层117.上电极层119或下电极层115具有开口200 至少在布置有半导体层117的区域内。

73. 发明授权

US07936002B2 Multiple-layer non-volatile memory devices, memory systems employing such devices, and methods of fabrication thereof 有权
标题翻译：多层非易失性存储器件，采用这种器件的存储器系统及其制造方法
公开(公告)号：US07936002B2
公开(公告)日：2011-05-03
申请号：US12456391
申请日：2009-06-16
申请人： Jonghyuk Kim , Han-Soo Kim , YoungSeop Rah , Min-sung Song , Jang Young Chul , Soon-Moon Jung , Wonseok Cho
发明人： Jonghyuk Kim , Han-Soo Kim , YoungSeop Rah , Min-sung Song , Jang Young Chul , Soon-Moon Jung , Wonseok Cho
IPC分类号： H01L29/76 , H01L31/036 , H01L31/112 , H01L29/94 , H01L31/062
CPC分类号： H01L21/82385 , H01L21/8221 , H01L21/823425 , H01L21/823456 , H01L21/823468 , H01L23/481 , H01L23/485 , H01L27/0688 , H01L27/11526 , H01L27/11551 , H01L2224/9202 , H01L21/76898
摘要： In multiple-layered memory devices, memory systems employing the same, and methods of forming such devices, a second memory device layer on a first memory device layer comprises a second substrate including a second memory cell region. The second substrate includes only a single well in the second memory cell region, the single well of the second memory cell region comprising a semiconducting material doped with impurity of one of a first type and second type. The single well defines an active region in the second memory cell region of the second substrate. Multiple second cell strings are arranged on the second substrate in the second active region. Although the second memory cell region includes only a single well, during a programming or erase operation of the memory cells of the second layer, requiring a high voltage to be applied to the single well in the substrate of the second layer, the high voltage will not interfere with the operation of the peripheral transistors of the first layer, second layer, or other layers, since they are isolated from each other. As a result, the substrate of the second layer can be prepared to have a thinner profile, and with fewer processing steps, resulting in devices with higher-density, greater reliability, and reduced fabrication costs.
摘要翻译：在多层存储器件中，采用该器件的存储器系统和形成这种器件的方法在第一存储器件层上的第二存储器件层包括包括第二存储单元区域的第二衬底。第二衬底仅包括第二存储单元区域中的单个阱，第二存储单元区域的单阱包括掺杂有第一类型和第二类型之一杂质的半导体材料。单阱限定了第二衬底的第二存储单元区域中的有源区。多个第二电池串被布置在第二有源区域中的第二衬底上。虽然第二存储单元区域仅包括单个阱，但是在第二层的存储单元的编程或擦除操作期间，需要向第二层的衬底中的单个阱施加高电压，高电压将不妨碍第一层，第二层或其它层的外围晶体管的操作，因为它们彼此隔离。结果，第二层的基底可以被制备成具有更薄的轮廓，并且具有更少的加工步骤，导致具有更高密度，更高可靠性和降低制造成本的装置。

74. 发明授权

US07910967B2 Ferroelectric capacitor having three-dimensional structure, nonvolatile memory device having the same and method of fabricating the same 失效
标题翻译：具有三维结构的铁电电容器，具有相同的非易失性存储器件及其制造方法
公开(公告)号：US07910967B2
公开(公告)日：2011-03-22
申请号：US11515024
申请日：2006-09-05
申请人： Sang-min Shin , Young-soo Park , June-mo Koo , Byoung-jae Bae , I-hun Song , Suk-pil Kim
发明人： Sang-min Shin , Young-soo Park , June-mo Koo , Byoung-jae Bae , I-hun Song , Suk-pil Kim
IPC分类号： H01L21/00 , H01L31/112 , H01L23/48
CPC分类号： H01L27/11502 , H01L27/11507
摘要： A ferroelectric capacitor having a three-dimensional structure, a nonvolatile memory device having the same, and a method of fabricating the same are provided. The ferroelectric capacitor may include a trench-type lower electrode, at least one layer formed around the lower electrode, a ferroelectric layer (PZT layer) formed on the lower electrode and the at least one layer and an upper electrode formed on the ferroelectric layer. The at least one layer may be at least one insulating interlayer and the at least one layer may also be at least one diffusion barrier layer. The at least one layer may be formed of an insulating material excluding SiO2 or may have a perovskite crystal structure excluding Pb.
摘要翻译：提供具有三维结构的铁电电容器，具有其的非易失性存储器件及其制造方法。铁电电容器可以包括沟槽型下电极，形成在下电极周围的至少一层，形成在下电极和至少一层上的铁电层（PZT层）和形成在铁电层上的上电极。所述至少一个层可以是至少一个绝缘夹层，并且所述至少一个层也可以是至少一个扩散阻挡层。所述至少一层可以由除了SiO2之外的绝缘材料形成，或者可以具有不包括Pb的钙钛矿晶体结构。

75. 发明授权

US07910736B2 Method for producing organic field-effect transistors 有权
标题翻译：制造有机场效应晶体管的方法
公开(公告)号：US07910736B2
公开(公告)日：2011-03-22
申请号：US11744611
申请日：2007-05-04
申请人： Martin Koenemann , Peter Erk , Zhenan Bao , Mang-Mang Ling
发明人： Martin Koenemann , Peter Erk , Zhenan Bao , Mang-Mang Ling
IPC分类号： C07D471/02 , H01L51/50 , H01L31/112
CPC分类号： H01L51/0053 , C07D471/06 , C07D471/16 , C07D493/06 , H01L27/283 , H01L51/0545 , H01L51/0558
摘要： A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3and R4are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.
摘要翻译：一种制造有机场效应晶体管的方法，包括以下步骤：a）提供包括位于所述衬底上的栅极结构，源电极和漏极的衬底，以及b）将n型有机半导体化合物施加到所述栅极结构，所述源极电极和所述漏电极所在的衬底的区域，其中所述n型有机半导体化合物选自由式I化合物组成的组，其中R 1，R 2，R 3和R 4独立地为氢，氯或溴，条件是这些基团中的至少一个不是氢，Y1是O或NRa，其中Ra是氢或有机残基，Y2是O或NRb，其中Rb是氢或有机残基，Z1， Z2，Z3和Z4是O，其中在Y1是NRa的情况下，残基Z1和Z2之一可以是NRc基团，其中R a和R c一起是在末端键之间具有2至5个原子的桥连基团，其中，在Y2为NRb的情况下，残基Z3和Z4之一可以是NRd基团，其中Rb和Rd一起是在末端键之间具有2至5个原子的桥连基团。

76. 发明授权

US07897973B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07897973B2
公开(公告)日：2011-03-01
申请号：US12834345
申请日：2010-07-12
申请人： Shunpei Yamazaki , Mitsuaki Osame
发明人： Shunpei Yamazaki , Mitsuaki Osame
IPC分类号： H01L29/76 , H01L31/036 , H01L31/112 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H05K1/09 , G02F1/133345 , G02F1/136286 , G02F1/1368 , G02F2001/13629 , G02F2001/136295 , G02F2201/123 , H01L23/50 , H01L23/53238 , H01L27/124 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L27/3279 , H01L2924/0002 , H05K5/0017 , H01L2924/00
摘要： It is an object of the present invention to prevent an influence of voltage drop due to wiring resistance, trouble in writing of a signal into a pixel, and trouble in gray scales, and provide a display device with higher definition, represented by an EL display device and a liquid crystal display device.In the present invention, a wiring including Cu is provided as an electrode or a wiring used for the display device represented by the EL display device and the liquid crystal display device. Besides, sputtering is performed with a mask to form the wiring including Cu. With such structure, it is possible to reduce the voltage drop and a deadened signal.
摘要翻译：本发明的目的是防止由于布线电阻引起的电压降的影响，将信号写入像素的麻烦以及灰度级的问题，并提供由EL显示器表示的更高清晰度的显示装置装置和液晶显示装置。在本发明中，提供包括Cu的布线作为用于由EL显示装置和液晶显示装置表示的显示装置使用的电极或布线。此外，用掩模进行溅射以形成包括Cu的布线。通过这样的结构，可以降低电压降和衰减信号。

77. 发明申请

US20110013107A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC APPARATUS 有权
标题翻译：半导体器件，半导体器件制造方法，液晶显示器件和电子设备
公开(公告)号：US20110013107A1
公开(公告)日：2011-01-20
申请号：US12934659
申请日：2009-03-30
申请人： Shigeru Mori , Isao Shouji , Hiroshi Tanabe
发明人： Shigeru Mori , Isao Shouji , Hiroshi Tanabe
IPC分类号： H01L29/786 , H01L31/112 , H01L21/336 , G02F1/015
CPC分类号： H01L29/78621 , G02F2001/13685 , H01L21/26506 , H01L21/26513
摘要： A semiconductor device includes a supporting substrate; a semiconductor film on the supporting substrate; a gate insulating film on the semiconductor film; a gate electrode on the gate insulating film; and a source region and a drain region formed by introducing impurity elements to the semiconductor film. The thickness of the semiconductor film is within the range of 20 nm to 40 nm. Low-concentration regions are provided between the source region and a channel forming region, and between the drain region and the channel forming region, respectively. The low-concentration regions each have an impurity concentration smaller than that of the source region and that of the drain region, and the impurity concentration in a lower surface side region on the side of the supporting substrate is smaller than that of an upper surface side region on the opposite side.
摘要翻译：半导体器件包括支撑衬底; 支撑基板上的半导体膜; 半导体膜上的栅极绝缘膜; 栅极绝缘膜上的栅电极; 以及通过将杂质元素引入半导体膜形成的源区和漏区。半导体膜的厚度在20nm〜40nm的范围内。在源极区域和沟道形成区域之间以及漏极区域和沟道形成区域之间分别设置有低浓度区域。低浓度区域的杂质浓度比源极区域和漏极区域的杂质浓度小，并且在支撑衬底侧的下表面侧区域中的杂质浓度小于上表面侧的杂质浓度对面的区域

78. 发明申请

US20100327149A1 SOLID-STATE IMAGING APPARATUS 有权
标题翻译：固态成像装置
公开(公告)号：US20100327149A1
公开(公告)日：2010-12-30
申请号：US12819916
申请日：2010-06-21
申请人： Seiichirou Sakai , Yuu Arishima
发明人： Seiichirou Sakai , Yuu Arishima
IPC分类号： H01L27/146 , H01L31/14 , H01L31/112
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14689
摘要： An apparatus includes a pixel region having disposed therein in a matrix form a plurality of conversion components, an amplifier transistor which amplifies a signal from the plurality of conversion components, a reset transistor which sets the potential of an input portion of the amplifier transistor to a reset potential, and a select transistor which is connected in series to the amplifier transistor and selects and reads the amplified signal, and well contact regions which are provided within the pixel region. Each of the well contact regions is neighboring to a drain region of the reset transistor, and the drain region of the reset transistor has a lower impurity concentration than the impurity concentration in the source and drain regions of the select transistor.
摘要翻译：一种装置，包括以矩阵形式形成多个转换元件的像素区域，放大晶体管，其放大来自多个转换元件的信号;复位晶体管，其将放大器晶体管的输入部分的电位设置为复位电位，以及与放大晶体管串联连接并选择放大信号的选择晶体管，以及设置在像素区域内的阱接触区域。每个阱接触区域与复位晶体管的漏极区域相邻，并且复位晶体管的漏极区域具有比选择晶体管的源极和漏极区域中的杂质浓度更低的杂质浓度。

79. 发明申请

US20100301216A1 METHOD AND SYSTEM FOR DETECTING LIGHT 有权
标题翻译：检测光的方法和系统
公开(公告)号：US20100301216A1
公开(公告)日：2010-12-02
申请号：US12789479
申请日：2010-05-28
申请人： Alon VARDI , Gad Bahir
发明人： Alon VARDI , Gad Bahir
IPC分类号： H01L27/14 , H01L31/112 , H01J40/00 , H01J40/14
CPC分类号： H01L31/101 , B82Y20/00 , H01L27/14609 , H01L31/035218 , H01L31/035236 , H01L31/1013 , H01L31/112
摘要： A light detecting system is disclosed. The system comprises an arrangement of quantum dots forming an optically active region, a channel region and a charge carrier extractor between the active region and the channel region. The charge carrier extractor is characterized by a set of gradually decreasing energy levels between a characteristic excited energy level of the active region and a characteristic conductance energy level of the channel region.
摘要翻译：公开了一种光检测系统。该系统包括在活性区域和沟道区域之间形成光学活性区域，沟道区域和电荷载体提取器的量子点的布置。电荷载体提取器的特征在于在有源区的特征激发能级与沟道区的特征电导能级之间逐渐降低的能级集合。

80. 发明申请

US20100295099A1 IMAGE SENSING DEVICE AND PACKAGING METHOD THEREOF 有权
标题翻译：图像感测装置及其包装方法
公开(公告)号：US20100295099A1
公开(公告)日：2010-11-25
申请号：US12848621
申请日：2010-08-02
申请人： Chi-Chih HUANG , Chih-Yang Hsu
发明人： Chi-Chih HUANG , Chih-Yang Hsu
IPC分类号： H01L31/112 , H01L31/10 , H01L31/02
CPC分类号： H01L31/0203 , H01L27/14618 , H01L2224/48091 , H01L2924/01079 , H01L2924/09701 , H01L2924/15311 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要： An image sensing device and packaging method thereof is disclosed. The packaging method includes the steps of a) providing an image sensing module, having a light-receiving region exposed, on a first substrate; b) forming a plurality of first contacts around the light-receiving region on the image sensing module; c) providing a second substrate, having a plurality of second contacts corresponding to the plurality of first contacts and an opening for allowing the light-receiving region to be exposed while the second substrate is placed over the image sensing module, the plurality of second contacts being disposed around the opening; d) connecting the plurality of first contacts and the plurality of second contacts; and e) disposing a transparent lid above the light-receiving region, on a side of the second substrate which is opposite to the plurality of second contacts.
摘要翻译：公开了一种图像感测装置及其封装方法。包装方法包括以下步骤：a）在第一基板上提供具有曝光的光接收区域的图像感测模块; b）在图像感测模块上形成围绕光接收区域的多个第一触点; c）提供第二基板，具有对应于多个第一触点的多个第二触点和用于允许在第二基板放置在图像感测模块上方的情况下使受光区域露出的开口，多个第二触点围绕开口设置; d）连接多个第一触点和多个第二触点; 以及e）在所述第二基板的与所述多个第二触点相对的一侧上，在所述光接收区域的上方设置透明盖。

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