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1. 发明授权

US08330193B2 Silicon oxide film, production method therefor and semiconductor device having gate insulation film using the same 有权
标题翻译：氧化硅膜及其制造方法以及使用其的具有栅极绝缘膜的半导体器件
公开(公告)号：US08330193B2
公开(公告)日：2012-12-11
申请号：US12131249
申请日：2008-06-02
申请人： Shigeru Mori , Hiroshi Tanabe , Jun Tanaka
发明人： Shigeru Mori , Hiroshi Tanabe , Jun Tanaka
IPC分类号： H01L29/76
CPC分类号： H01L29/4908
摘要： The present invention provides a high-performance silicon oxide film as a gate insulation film and a semiconductor device having superior electric characteristics. The silicon oxide film according to the present invention includes CO2 in the film, wherein, when an integrated intensity of a peak is expressed by (peak width at half height)×(peak height) in an infrared absorption spectrum, the integrated intensity of a CO2-attributed peak which appears in the vicinity of a wave number of 2,340 cm−1 is 8E-4 times or more with respect to the integrated intensity of an SiO2-attributed peak which appears in the vicinity of a wave number of 1,060 cm−1.
摘要翻译：本发明提供一种作为栅绝缘膜的高性能氧化硅膜和具有优异电特性的半导体器件。根据本发明的氧化硅膜包括膜中的CO 2，其中当红外吸收光谱中的峰值的积分强度（半高峰宽度）×（峰高））表示的积分强度时，出现在2,340cm-1波数附近的二氧化碳归属峰相对于在1,060cm -1的波数附近出现的SiO 2归属峰的积分强度为8E-4倍以上， 1。

2. 发明申请

US20120058646A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120058646A1
公开(公告)日：2012-03-08
申请号：US13291450
申请日：2011-11-08
申请人： SHIGERU MORI
发明人： SHIGERU MORI
IPC分类号： H01L21/71
CPC分类号： H01L23/28 , H01L21/02365 , H01L29/02 , H01L29/66757 , H01L29/78 , H01L29/78603 , H01L29/78606 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device in which a semiconductor layer is formed on an insulating substrate with a front-end insulating layer interposed between the semiconductor layer and the insulating substrate is provided which is capable of preventing action of an impurity contained in the insulating substrate on the semiconductor layer and of improving reliability of the semiconductor device. In a TFT (Thin Film Transistor), boron is made to be contained in a region located about 100 nm or less apart from a surface of the insulating substrate so that boron concentration decreases at an average rate being about 1/1000-fold per 1 nm from the surface of the insulating substrate toward the semiconductor layer.
摘要翻译：提供一种半导体器件，其中半导体层形成在绝缘基板上，其中插入在半导体层和绝缘基板之间的前端绝缘层，其能够防止绝缘基板中包含的杂质对半导体层的作用并提高半导体器件的可靠性。在TFT（薄膜晶体管）中，使硼被包含在距离绝缘基板的表面约100nm以下的区域中，使得硼浓度以平均速率降低约1/1000倍/ 1 从绝缘基板的表面朝向半导体层。

3. 发明申请

US20100283106A1 SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR LAYER ON INSULATING STRUCTURE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：具有绝缘结构的半导体层的半导体器件及其制造方法
公开(公告)号：US20100283106A1
公开(公告)日：2010-11-11
申请号：US12841253
申请日：2010-07-22
申请人： Shigeru MORI
发明人： Shigeru MORI
IPC分类号： H01L29/786 , H01L21/314
CPC分类号： H01L23/28 , H01L21/02365 , H01L29/02 , H01L29/66757 , H01L29/78 , H01L29/78603 , H01L29/78606 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device in which a semiconductor layer is formed on an insulating substrate with a front-end insulating layer interposed between the semiconductor layer and the insulating substrate is provided which is capable of preventing action of an impurity contained in the insulating substrate on the semiconductor layer and of improving reliability of the semiconductor device. In a TFT (Thin Film Transistor), boron is made to be contained in a region located about 100 nm or less apart from a surface of the insulating substrate so that boron concentration decreases at an average rate being about 1/1000-fold per 1 nm from the surface of the insulating substrate toward the semiconductor layer.
摘要翻译：提供一种半导体器件，其中半导体层形成在绝缘基板上，其中插入在半导体层和绝缘基板之间的前端绝缘层，其能够防止绝缘基板中包含的杂质对半导体层的作用并提高半导体器件的可靠性。在TFT（薄膜晶体管）中，使硼被包含在距离绝缘基板的表面约100nm以下的区域中，使得硼浓度以平均速率降低约1/1000倍/ 1 从绝缘基板的表面朝向半导体层。

4. 发明授权

US07772645B2 Semiconductor device having semiconductor layer on insulating structure and method of manufacturing the same 有权
标题翻译：具有绝缘结构的半导体层的半导体器件及其制造方法
公开(公告)号：US07772645B2
公开(公告)日：2010-08-10
申请号：US11727971
申请日：2007-03-29
申请人： Shigeru Mori
发明人： Shigeru Mori
IPC分类号： H01L21/76
CPC分类号： H01L23/28 , H01L21/02365 , H01L29/02 , H01L29/66757 , H01L29/78 , H01L29/78603 , H01L29/78606 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device in which a semiconductor layer is formed on an insulating substrate with a front-end insulating layer interposed between the semiconductor layer and the insulating substrate is provided which is capable of preventing action of an impurity contained in the insulating substrate on the semiconductor layer and of improving reliability of the semiconductor device. In a TFT (Thin Film Transistor), boron is made to be contained in a region located about 100 nm or less apart from a surface of the insulating substrate so that boron concentration decreases at an average rate being about 1/1000-fold per 1 nm from the surface of the insulating substrate toward the semiconductor layer.
摘要翻译：提供一种半导体器件，其中半导体层形成在绝缘基板上，其中插入在半导体层和绝缘基板之间的前端绝缘层，其能够防止绝缘基板中包含的杂质对半导体层的作用并提高半导体器件的可靠性。在TFT（薄膜晶体管）中，使硼被包含在距离绝缘基板的表面约100nm以下的区域中，使得硼浓度以平均速率降低约1/1000倍/ 1 从绝缘基板的表面朝向半导体层。

5. 发明授权

US07634538B2 Product counseling system, product development program, and machine-readable recording medium 有权
标题翻译：产品咨询系统，产品开发程序和机器可读记录介质
公开(公告)号：US07634538B2
公开(公告)日：2009-12-15
申请号：US10241227
申请日：2002-09-11
申请人： Shigeru Mori , Takashi Satoh
发明人： Shigeru Mori , Takashi Satoh
IPC分类号： G06F15/16 , G06F17/30
CPC分类号： G06Q30/0601 , G06Q30/02
摘要： The present invention is a cosmetic product counseling system in which a user terminal is provided with skin diagnostic equipment for measurement of the skin of customers. Cosmetic products suited for the customers are selected based on skin condition data obtained from the skin diagnostic equipment before selecting a cosmetic product and attribute data entered from the user terminal which are in the server. A product selection DB is provided in which product matrices linking each item contained in the skin condition data and product characteristics of the cosmetics are stored. Then, based on result skin condition data indicating skin condition of the customer after using the selected cosmetic product and usage evaluation data entered by the customer responding to a questionnaire, the cosmetic product is reselected until a predetermined satisfaction rating is obtained from the customer.
摘要翻译：本发明是一种化妆品咨询系统，其中用户终端设置有用于测量顾客皮肤的皮肤诊断设备。根据从皮肤诊断装置得到的皮肤状况数据，选择适合顾客的化妆品，从服务器内的用户终端输入的化妆品和属性数据。提供了一种产品选择DB，其中存储了连接化妆品的皮肤状态数据和产品特征中包含的每个物品的产品矩阵。然后，根据使用选择的化妆品后的顾客的皮肤状况的结果皮肤状况数据和由顾客响应调查表输入的使用评价数据，重新选择化妆品，直到从顾客取得规定的满意度为止。

6. 发明授权

US07369375B2 Magneto-resistance effect element and magneto-resistance effect head 有权
标题翻译：磁阻效应元件和磁阻效应头
公开(公告)号：US07369375B2
公开(公告)日：2008-05-06
申请号：US11477411
申请日：2006-06-30
申请人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
发明人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R31/3171 , G01R33/093 , G11B5/00 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967 , H01F10/3268
摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A first magnetic layer is provided on the lower conductive layer. On the first magnetic layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.
摘要翻译：磁阻效应头设置有设置有凹部的下导电层，在凹部设置有垂直偏置层。第一磁性层设置在下导电层上。在第一磁性层上，按照以下顺序层叠非磁性层，固定层，固定层和上层，以便不被放置在垂直偏置层的正上方。非磁性层，固定层，固定层和上层被埋在绝缘层中。此外，在上层和绝缘层上设置有上导电层。在由垂直偏置层施加的磁场的方向上，自由层的长度比固定层长，并且自由层设置在垂直偏置层附近，固定层和垂直偏置之间的距离层保持不变。

7. 发明申请

US20070047158A1 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system 有权
标题翻译：磁阻效应元件，磁阻效应头，磁阻传感器系统和磁存储系统
公开(公告)号：US20070047158A1
公开(公告)日：2007-03-01
申请号：US11477411
申请日：2006-06-30
申请人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
发明人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R31/3171 , G01R33/093 , G11B5/00 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967 , H01F10/3268
摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.
摘要翻译：磁阻效应头设置有设置有凹部的下导电层，在凹部设置有垂直偏置层。在下导电层上提供自由层。在自由层上，按照以下顺序层叠非磁性层，固定层，固定层和上层，以便不被放置在垂直偏置层的正上方。非磁性层，固定层，固定层和上层被埋在绝缘层中。此外，在上层和绝缘层上设置有上导电层。在由垂直偏置层施加的磁场的方向上，自由层的长度比固定层长，并且自由层设置在垂直偏置层附近，固定层与垂直偏置之间的距离层保持不变。

8. 发明申请

US20060007606A1 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system 有权
公开(公告)号：US20060007606A1
公开(公告)日：2006-01-12
申请号：US11227143
申请日：2005-09-16
申请人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
发明人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R31/3171 , G01R33/093 , G11B5/00 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967 , H01F10/3268
摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

9. 发明授权

US06955836B2 Silicon oxide film formation method 失效
标题翻译：氧化硅膜形成方法
公开(公告)号：US06955836B2
公开(公告)日：2005-10-18
申请号：US10326092
申请日：2002-12-23
申请人： Akira Kumagai , Keiji Ishibashi , Shigeru Mori
发明人： Akira Kumagai , Keiji Ishibashi , Shigeru Mori
IPC分类号： C23C16/40 , C23C16/44 , C23C16/452 , C23C16/455 , H01L21/316
CPC分类号： C23C16/45565 , C23C16/401 , C23C16/452 , C23C16/45591
摘要： A silicon oxide film formation method enhances the efficiency of generating atomic oxygen and improves film quality of a silicon film (SiO2 film) in forming the silicon oxide film using an RS-CVD system. Nitrogen atom containing gas (N2 gas, NO gas, N2O gas, NO2 gas or the like) is added to oxygen atom containing gas (O2 gas, O3 gas or the like) introduced into a plasma generating space in a vacuum container to produce plasmas with these gases and to thereby increase the quantity of atomic oxygen generated by the plasmas in the plasma generating space.
摘要翻译：在使用RS-CVD系统形成氧化硅膜时，氧化硅膜形成方法提高了产生原子氧的效率并提高了硅膜（SiO 2膜）的膜质量。将含氮原子的气体（N 2气体，NO气体，N 2 O气体，NO 2气体等）加入氧原子将含有气体（O 2 O 2气体，O 3气体等）引入到真空容器中的等离子体产生空间中以产生具有这些气体的等离子体，从而增加数量由等离子体产生空间中的等离子体产生的原子氧。

10. 发明授权

US06903908B2 Magnetoresistive effect sensor with barrier layer smoothed by composition of lower shield layer 失效
标题翻译：具有阻挡层的磁阻效应传感器由下屏蔽层的组成平滑化
公开(公告)号：US06903908B2
公开(公告)日：2005-06-07
申请号：US09853622
申请日：2001-05-14
申请人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Eizo Fukami , Kiyokazu Nagahara , Hiroaki Honjo , Junichi Fujikata , Kunihiko Ishihara , Shigeru Mori
发明人： Kazuhiko Hayashi , Keishi Ohashi , Nobuyuki Ishiwata , Masafumi Nakada , Eizo Fukami , Kiyokazu Nagahara , Hiroaki Honjo , Junichi Fujikata , Kunihiko Ishihara , Shigeru Mori
IPC分类号： G01R33/02 , G01R31/317 , G01R33/09 , G11B5/00 , G11B5/39 , G11B5/40 , H01F10/16 , H01F10/32 , H01L43/08 , H01L43/12 , G11B5/11
CPC分类号： B82Y25/00 , B82Y10/00 , G01R31/3171 , G01R33/093 , G11B5/00 , G11B5/3903 , G11B5/3909 , G11B5/40 , G11B2005/3996
摘要： A magnetoresistive effect sensor uses a shielded-type magnetoresistive effect element using a magnetoresistive effect film formed by a basic configuration of a combination of a free layer, a barrier layer formed on the free layer, and a fixed layer formed on the barrier layer, wherein a sensing current flows substantially perpendicular to the magnetoresistive effect film, and wherein an amorphous material or a microcrystalline material is used in a lower shield.
摘要翻译：磁阻效应传感器使用屏蔽型磁阻效应元件，其使用由自由层，形成在自由层上的阻挡层和形成在阻挡层上的固定层的组合的基本结构形成的磁阻效应膜，其中感测电流基本上垂直于磁阻效应膜流动，并且其中在下屏蔽中使用无定形材料或微晶材料。

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