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    • 72. 发明申请
    • CATALYTIC SMOG REDUCTION
    • 催化降糖
    • US20130291931A1
    • 2013-11-07
    • US13932802
    • 2013-07-01
    • Gerald Peter JacksonJason Ryan BabcockJoseph Matthew Zlotnicki
    • Gerald Peter JacksonJason Ryan BabcockJoseph Matthew Zlotnicki
    • H01L31/04
    • H02S10/30B01D53/8696B01D53/9495B01D2251/11B01D2256/20B01D2257/404B01D2257/702
    • Illustratively, an electrical generator includes a photovoltaic element which converts light produced by a surface into electrical power, the surface located in thermal communication with exhaust gases produced by an exothermic chemical reaction; a heat exchanger which takes at least a majority of thermal energy in the exhaust gases, after the thermal communication, and transfers the thermal energy to air input to the reaction; a catalytic converter, inside the heat exchanger, located to ensure that at least most of the exhaust gases are communicated into the catalytic converter and that heat generated by operation of the catalytic converter is transferred to the air input to the reaction; a sensor in the heat exchanger, located to monitor the reaction before the exhaust gases are communicated into the catalytic converter; a sensor located to sense after the exhaust gases are communicated into the catalytic converter, whether the catalytic converter is functioning properly.
    • 示例性地,发电机包括光电元件,其将由表面产生的光转换成电力,该表面与由放热化学反应产生的废气热连通; 热交换器,其在热连通之后至少占据废气中的大部分热能,并将热能传递到输入到反应的空气中; 位于热交换器内部的催化转化器,以确保至少大部分废气被连通到催化转化器中,并且通过催化转化器的操作产生的热被传递到反应的空气输入端; 热交换器中的传感器,用于在废气连通到催化转化器之前监测反应; 传感器位于在排气与催化转化器连通后感测,催化转化器是否正常工作。
    • 74. 发明申请
    • POWER GENERATION DEVICE, THERMAL POWER GENERATION METHOD AND SOLAR POWER GENERATION METHOD
    • 发电装置,热发电方法和太阳能发电方法
    • US20130213460A1
    • 2013-08-22
    • US13882409
    • 2011-08-29
    • Takahiro Matsumoto
    • Takahiro Matsumoto
    • H01L31/04
    • H02S10/30H01L31/0236H01L31/0543H01L31/0547H01L35/00Y02E10/52
    • A small sized power generator is provided, being highly efficient in power generation. The power generator can include a heat-light conversion element for converting heat to infrared light and a semiconductor power generation cell for converting the infrared light to electrical energy. The heat-light conversion element can include a material in which reflectance is higher on a long wavelength side of a predetermined infrared wavelength, relative to reflectance on a short wavelength side thereof. The material can cause radiation of the infrared light upon being heated. Heat from a heat source is transferred to the heat-light conversion element, thereby radiating the infrared light. The semiconductor power generation cell converts this infrared light to electrical energy, thereby performing thermal power generation. In order to heat the heat-light conversion element, a light collection optical system can be provided for collecting sunlight toward the heat-light conversion element, enabling solar thermo-photovoltaic power generation.
    • 提供小型发电机,发电效率高。 发电机可以包括用于将热量转换成红外光的热光转换元件和用于将红外光转换成电能的半导体发电单元。 热光转换元件可以包括相对于其短波长侧的反射率,预定红外波长的长波长侧的反射率更高的材料。 该材料在加热时可引起红外光的辐射。 来自热源的热量被传递到热光转换元件,从而辐射红外光。 半导体发电单元将该红外光转换为电能,进行热发电。 为了加热热光转换元件,可以提供一种聚光光学系统,用于朝向热光转换元件收集太阳光,从而实现太阳能热光伏发电。
    • 75. 发明申请
    • METHOD OF FORMING SINGLE-CRYSTAL SEMICONDUCTOR LAYERS AND PHOTOVALTAIC CELL THEREON
    • 形成单晶半导体层和光电池的方法
    • US20130186455A1
    • 2013-07-25
    • US13401206
    • 2012-02-21
    • Jifeng LiuXiaoxin Wang
    • Jifeng LiuXiaoxin Wang
    • H01L31/04H01L31/18C30B1/08
    • H01L31/0368C30B1/02C30B1/023C30B29/06H01L31/03682H01L31/076H01L31/1872Y02E10/546Y02E10/548Y02P70/521
    • A method for forming single crystal or large-crystal-grain thin-film layers deposits a thin-film amorphous, nanocrystalline, microcrystalline, or polycrystalline layer, and laser-heats a seed spot having size on the order of a critical nucleation size of the thin-film layer. The single-crystal seed spot is extended into a single-crystal seed line by laser-heating one or more crystallization zones adjacent to the seed spot and drawing the zone across the thin-film layer. The single-crystal seed line is extended across the thin-film material layer into a single-crystal layer by laser-heating an adjacent linear crystallization zone and drawing the crystallization zone across the thin-film layer. Photovoltaic cells may be formed in or on the single-crystal layer. Tandem photovoltaic devices may be formed using one or several iterations of the method. The method may also be used to form single-crystal semiconductor thin-film transistors, such as for display devices, or to form single-crystal superconductor layers.
    • 用于形成单晶或大晶粒薄膜层的方法沉积薄膜非晶,纳米晶体,微晶或多晶层,并且激光加热具有临界成核尺寸级别的大小的晶种点 薄膜层。 通过激光加热与种子斑点相邻的一个或多个结晶区域并将该区域横穿薄膜层,将单晶种子斑点延伸到单晶种子线中。 单晶种子线通过激光加热相邻的线性结晶区并在薄膜层上拉伸结晶区,在薄膜材料层上延伸成单晶层。 光电池可以形成在单晶层中或单晶层上。 可以使用该方法的一个或多个迭代来形成串联光伏器件。 该方法也可用于形成诸如显示器件的单晶半导体薄膜晶体管,或者形成单晶超导体层。
    • 76. 发明授权
    • Sensor pixels, arrays and array systems and methods therefor
    • 传感器像素,阵列和阵列系统及其方法
    • US08487231B2
    • 2013-07-16
    • US12530151
    • 2007-12-17
    • Arokia NathanG. Reza Chaji
    • Arokia NathanG. Reza Chaji
    • G01J1/44G01D5/14H01L27/146H01L27/148H01L31/04
    • H01L27/14612G01D5/24G01J1/46H01L27/14609H01L29/94H04N5/357H04N5/378
    • One sensor pixel includes amplifying transistor, coupled between first bias line and data line; switch transistor, operated by control line and coupled between data line and gate of amplifying transistor; storage capacitor, coupled to second bias line; and sensor being coupled to gate of amplifying transistor. Another sensor pixel includes first amplifying transistor coupled between first bias line and data line; second amplifying transistor being coupled between second bias line and data line; switch transistor being operated by control line and being coupled between data line and gates of first and second amplifying transistors; storage capacitor coupled to gates of first and second amplifying transistors; and sensor coupled to gates of first and second amplifying transistors. Further sensor pixel includes two photo transistors connected to first and second bias lines. Trap-assisted absorption, variable capacitor described for sensor pixels, and also biasing to reduce flicker and aging, and to compensate for aging, described for sensor pixels.
    • 一个传感器像素包括耦合在第一偏置线和数据线之间的放大晶体管; 开关晶体管,由控制线操作并耦合在数据线和放大晶体管的栅极之间; 存储电容器,耦合到第二偏置线; 并且传感器耦合到放大晶体管的栅极。 另一个传感器像素包括耦合在第一偏置线和数据线之间的第一放大晶体管; 第二放大晶体管耦合在第二偏置线和数据线之间; 开关晶体管由控制线操作并耦合在第一和第二放大晶体管的数据线和栅极之间; 耦合到第一和第二放大晶体管的栅极的存储电容器; 以及耦合到第一和第二放大晶体管的栅极的传感器。 另外的传感器像素包括连接到第一和第二偏置线的两个光电晶体管。 针对传感器像素描述的陷阱辅助吸收,可变电容器,以及偏置以减少闪烁和老化,并补偿传感器像素所描述的老化。
    • 79. 发明申请
    • Photo Detector and Methods of Manufacturing and Operating Same
    • 光电探测器和制造和操作方法相同
    • US20120313155A1
    • 2012-12-13
    • US13481891
    • 2012-05-28
    • Serguei Okhonin
    • Serguei Okhonin
    • H01L31/04
    • H01L31/022408H01L31/1136
    • A photo detector comprising a first doped impurity region (adapted to receive a first voltage) disposed in or on a substrate; a body region, juxtaposed the first doped impurity region; a gate (adapted to receive a second voltage) spaced from a first portion of the body region; a light absorbing region, juxtaposed a second portion of the body region, includes a material which, in response to light incident thereon, generates carrier pairs including a first and second type carriers; a contact region (adapted to receive a third voltage) juxtaposed the light absorbing region; wherein, in response to incident light, the gate attracts first type carriers of the carrier pairs to the first portion of the body region which causes second carriers from the first doped impurity region to flow to the contact region, and the contact region attracts second type carriers.
    • 一种光电检测器,其包括设置在衬底中或衬底上的第一掺杂杂质区域(适于接收第一电压); 体区,并置第一掺杂杂质区; 与身体区域的第一部分间隔开的门(适于接收第二电压); 与身体区域的第二部分并列的光吸收区域包括响应于入射到其上的光产生包括第一和第二类型载体的载体对的材料; 接触区域(适于接收第三电压)并置所述光吸收区域; 其中,响应于入射光,所述栅极将所述载体对的第一类型载流子吸引到所述体区的第一部分,其使得来自所述第一掺杂杂质区的第二载流子流到所述接触区,并且所述接触区吸引第二类型 承运人