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1. 发明申请

US20180145202A1 TYPE IV SEMICONDUCTOR BASED HIGH VOLTAGE LATERALLY STACKED MULTIJUNCTION PHOTOVOLTAIC CELL 审中-公开
公开(公告)号：US20180145202A1
公开(公告)日：2018-05-24
申请号：US15875535
申请日：2018-01-19
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Stephen W. Bedell , Ning Li , Devendra K. Sadana , Ghavam G. Shahidi
IPC分类号： H01L31/076 , H01L31/18 , H01L31/028
CPC分类号： H01L31/076 , H01L31/022433 , H01L31/028 , H01L31/03529 , H01L31/0687 , H01L31/1804 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： A method of forming a photovoltaic device that includes ion implanting a first conductivity type dopant into first regions of a semiconductor layer of an SOI substrate, wherein the first regions are separated by a first pitch; and ion implanting a second conductivity type dopant into second regions of the semiconductor layer of the SOI substrate. The second regions are separated by a second pitch. Each second conductivity type implanted region of the second regions is in direct contact with first conductivity type implanted region of the first regions to provide a plurality of p-n junctions, and adjacent p-n junctions are separated by an intrinsic portion of the semiconductor layer to provide P-I-N cells that are horizontally oriented.

2. 发明申请

US20170370012A1 PHOTOCHEMICAL REACTION SYSTEM 审中-公开
公开(公告)号：US20170370012A1
公开(公告)日：2017-12-28
申请号：US15697956
申请日：2017-09-07
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Akihiko ONO , Satoshi MIKOSHIBA , Yuki KUDO , Jun TAMURA , Ryota KITAGAWA , Chingchun HUANG
IPC分类号： C25B3/04 , C01B32/50 , C01B32/05 , H01L31/076 , C25B9/08 , C25B9/06 , C07C51/00 , B01J19/12
CPC分类号： C25B3/04 , B01J19/127 , B01J2219/0875 , B01J2219/1203 , C01B32/05 , C01B32/50 , C07C51/00 , C25B9/06 , C25B9/08 , H01L31/076 , Y02E10/548
摘要： According to one embodiment, a photochemical reaction system comprises a CO2 production unit, a CO2 absorption unit, and a CO2 reduction unit. The CO2 reduction unit comprises a laminated body and an ion transfer pathway. The laminated body comprises an oxidation catalyst layer producing O2 and H+ by oxidizing H2O, a reduction catalyst layer producing carbon compounds by reducing CO2 absorbed by the CO2 absorption unit, and a semiconductor layer formed between the oxidation catalyst layer and the reduction catalyst layer and develops charge separation with light energy. The ion transfer pathways make ions move between the oxidation catalyst layer side and the reduction catalyst layer side.

3. 发明申请

US20160284926A1 HETEROSTRUCTURE GERMANIUM TANDEM JUNCTION SOLAR CELL 审中-公开
标题翻译：异体结构锗管连接太阳能电池
公开(公告)号：US20160284926A1
公开(公告)日：2016-09-29
申请号：US15178701
申请日：2016-06-10
申请人： International Business Machines Corporation
发明人： Keith E. Fogel , Bahman Hekmatshoartabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
IPC分类号： H01L31/20 , H01L31/18
CPC分类号： H01L31/078 , H01L31/035227 , H01L31/035281 , H01L31/0725 , H01L31/0745 , H01L31/076 , H01L31/1824 , H01L31/1884 , H01L31/20 , Y02E10/548
摘要： A photovoltaic device that includes an upper cell that absorbs a first range of wavelengths of light and a bottom cell that absorbs a second range of wavelengths of light. The bottom cell includes a heterojunction comprising a crystalline germanium containing (Ge) layer. At least one surface of the crystalline germanium (Ge) containing layer is in contact with a silicon (Si) containing layer having a larger band gap than the crystalline (Ge) containing layer.
摘要翻译：一种光电器件，其包括吸收光的第一波长范围的上电池和吸收第二波长波长的底电池。底部电池包括含有结晶含锗（Ge）层的异质结。含结晶锗（Ge）层的至少一个表面与含有结晶（Ge）层的带隙较大的含硅（Si）层接触。

4. 发明申请

US20160248028A1 METHOD FOR SINGLE CRYSTAL GROWTH OF PHOTOVOLTAIC PEROVSKITE MATERIAL AND DEVICES 有权
标题翻译：光伏玻璃材料和器件的单晶生长方法
公开(公告)号：US20160248028A1
公开(公告)日：2016-08-25
申请号：US15009701
申请日：2016-01-28
申请人： NUtech Ventures
发明人： Jinsong Huang , Qingfeng Dong
IPC分类号： H01L51/42 , H01L51/00 , C30B29/54 , H01L31/076 , C30B19/06 , C30B7/08 , H01L51/44 , H01L27/30
CPC分类号： H01L51/4293 , C30B7/08 , C30B19/062 , C30B29/54 , H01L27/302 , H01L31/076 , H01L51/0002 , H01L51/0037 , H01L51/005 , H01L51/0077 , H01L51/4213 , H01L51/424 , H01L51/441 , H01L51/442 , H01L2031/0344 , Y02E10/549
摘要： Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.
摘要翻译：钙钛矿单晶生长的系统和方法包括使用在包含至少一种小钙钛矿单晶的容器中使用钙钛矿溶液中的温度梯度的低温溶液法和在其上的基底上的钙钛矿晶体成核和生长，部分是由于溶液中的温度梯度，部分是由于衬底中的温度梯度。例如，可以冷却溶液外部的基底的顶部。

5. 发明授权

US09356171B2 Method of forming single-crystal semiconductor layers and photovaltaic cell thereon 有权
标题翻译：在其上形成单晶半导体层和光电池的方法
公开(公告)号：US09356171B2
公开(公告)日：2016-05-31
申请号：US13401206
申请日：2012-02-21
申请人： Jifeng Liu , Xiaoxin Wang
发明人： Jifeng Liu , Xiaoxin Wang
IPC分类号： H01L31/0368 , C30B1/02 , C30B29/06 , H01L31/076 , H01L31/18
CPC分类号： H01L31/0368 , C30B1/02 , C30B1/023 , C30B29/06 , H01L31/03682 , H01L31/076 , H01L31/1872 , Y02E10/546 , Y02E10/548 , Y02P70/521
摘要： A method for forming single crystal or large-crystal-grain thin-film layers deposits a thin-film amorphous, nanocrystalline, microcrystalline, or polycrystalline layer, and laser-heats a seed spot having size on the order of a critical nucleation size of the thin-film layer. The single-crystal seed spot is extended into a single-crystal seed line by laser-heating one or more crystallization zones adjacent to the seed spot and drawing the zone across the thin-film layer. The single-crystal seed line is extended across the thin-film material layer into a single-crystal layer by laser-heating an adjacent linear crystallization zone and drawing the crystallization zone across the thin-film layer. Photovoltaic cells may be formed in or on the single-crystal layer. Tandem photovoltaic devices may be formed using one or several iterations of the method. The method may also be used to form single-crystal semiconductor thin-film transistors, such as for display devices, or to form single-crystal superconductor layers.
摘要翻译：用于形成单晶或大晶粒薄膜层的方法沉积薄膜非晶，纳米晶体，微晶或多晶层，并且激光加热具有临界成核尺寸级别的大小的晶种点薄膜层。通过激光加热与种子斑点相邻的一个或多个结晶区域并将该区域横穿薄膜层，将单晶种子斑点延伸到单晶种子线中。单晶种子线通过激光加热相邻的线性结晶区并在薄膜层上拉伸结晶区，在薄膜材料层上延伸成单晶层。光电池可以形成在单晶层中或单晶层上。可以使用该方法的一个或多个迭代来形成串联光伏器件。该方法也可用于形成诸如显示器件的单晶半导体薄膜晶体管，或者形成单晶超导体层。

6. 发明授权

US09225285B2 Photovoltaic installation with automatic disconnect device 有权
标题翻译：光伏安装带自动断开装置
公开(公告)号：US09225285B2
公开(公告)日：2015-12-29
申请号：US12371315
申请日：2009-02-13
申请人： John Peurach , Carl J. S. Lenox , Jawid Arghestani
发明人： John Peurach , Carl J. S. Lenox , Jawid Arghestani
IPC分类号： H01L31/042 , H02N6/00 , H02S40/30 , H01L31/02 , H02S40/34 , H01L31/075 , H01L31/076 , H01L31/18
CPC分类号： H02S40/30 , H01L31/02019 , H01L31/02021 , H01L31/075 , H01L31/076 , H01L31/1876 , H02S40/34 , Y02B10/12 , Y02B10/14 , Y02E10/548 , Y02E10/56 , Y02E10/563 , Y02E10/566 , Y02P70/521
摘要： A PV installation comprises a PV array, an electrical interface connecting a utility power source to an electrical load, and a DC to AC inverter. A first set of wiring electrically connects the PV array to the inverter through a disconnect device and a second set of wiring electrically connects the inverter to the electrical interface. A control mechanism connects the disconnect device to the electrical interface so that when power from the electrical interface is removed, the PV array is electrically disconnected from the inverter. The disconnect device may be a remote disconnect device located at a position at or near the PV array, such as in the space beneath a roof supporting the PV array. A method electrically disconnects a PV array from electrical wiring at a site.
摘要翻译： PV安装包括光伏阵列，将公用电源连接到电气负载的电气接口以及直流到交流逆变器。第一组布线通过断开装置将PV阵列电连接到逆变器，并且第二组布线将逆变器电连接到电接口。控制机构将断开装置连接到电气接口，使得当从电接口的电力被去除时，PV阵列与逆变器电气断开。断开装置可以是位于PV阵列处或附近的位置处的远程断开装置，例如在支撑PV阵列的屋顶下的空间中。一种方法将PV阵列与现场的电线电连接。

7. 发明申请

US20150263199A1 TANDEM SOLAR CELL WITH IMPROVED ABSORPTION MATERIAL 有权
标题翻译：具有改进吸收材料的TANDEM太阳能电池
公开(公告)号：US20150263199A1
公开(公告)日：2015-09-17
申请号：US14727071
申请日：2015-06-01
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： OKI GUNAWAN , JEEHWAN KIM , DAVID B. MITZI , DEVENDRA K. SADANA , TEODOR K. TODOROV
IPC分类号： H01L31/032 , H01L31/20 , H01L31/076 , C25D7/12 , C23C14/34
CPC分类号： H01L31/0326 , C23C14/34 , C25D7/12 , H01L31/076 , H01L31/078 , H01L31/18 , H01L31/20 , Y02E10/548
摘要： A photosensitive device and method includes a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween. A bottom cell includes an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. The bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide.
摘要翻译：感光装置和方法包括具有N型层的顶层单元，P型层和其间的顶层本征层。底部单元包括N型层，P型层和底层本征层。底部本征层包括含有Cu-Zn-Sn的硫族化物。

8. 发明授权

US09112088B2 Method for manufacturing a thin-film solar cell using a plasma between parallel electrodes 有权
标题翻译：在平行电极之间使用等离子体制造薄膜太阳能电池的方法
公开(公告)号：US09112088B2
公开(公告)日：2015-08-18
申请号：US13642736
申请日：2011-04-22
申请人： Koichiro Niira , Norikazu Ito , Shinichiro Inaba
发明人： Koichiro Niira , Norikazu Ito , Shinichiro Inaba
IPC分类号： H01L21/00 , H01L31/076 , C23C16/455 , C23C16/46 , C23C16/509 , H01L21/02 , H01L31/0368 , H01L31/0376 , H01L31/0392 , H01L31/18 , H01L31/20
CPC分类号： H01L31/076 , C23C16/45565 , C23C16/4557 , C23C16/46 , C23C16/509 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L31/03685 , H01L31/03762 , H01L31/03921 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Disclosed is a method for manufacturing a thin-film solar cell using plasma between a couple of parallel electrodes. In the method, a base member is placed in a chamber between a first electrode and a second electrode facing each other. A hydrogen gas is heated, and thus heated hydrogen gas and a silicon-based gas are introduced into a space between the first electrode and the second electrode. A ratio of a flow rate of the heated hydrogen gas to that of the silicon-based gas is at least 25 and no more than 58. A plasma is generated between the first electrode and the second electrode by applying high-frequency power to the second electrode while a pressure in the chamber is 1000 Pa or higher, and an optically active layer containing crystalline silicon is deposited on the base material.
摘要翻译：公开了一种使用等离子体在一对平行电极之间制造薄膜太阳能电池的方法。在该方法中，将基底构件放置在彼此面对的第一电极和第二电极之间的室中。氢气被加热，因此加热的氢气和硅基气体被引入到第一电极和第二电极之间的空间中。加热后的氢气与硅系气体的流量的比例为25以上且58以下。通过向第2电极施加高频电力，在第1电极与第2电极之间产生等离子体电极，同时室内的压力为1000Pa以上，并且在基材上沉积含有结晶硅的光学活性层。

9. 发明授权

US09029688B2 Photovoltaic device including flexible substrate or inflexible substrate and method for manufacturing the same 有权
标题翻译：包括柔性基板或不灵活基板的光伏器件及其制造方法
公开(公告)号：US09029688B2
公开(公告)日：2015-05-12
申请号：US13071074
申请日：2011-03-24
申请人： Seung-Yeop Myong
发明人： Seung-Yeop Myong
IPC分类号： H01L31/20 , H01L31/18 , H01L31/0236 , H01L31/0368 , H01L31/076 , H01L31/0384 , H01L31/0392 , H01L31/0352 , H01L31/075
CPC分类号： H01L31/03529 , H01L31/02363 , H01L31/03685 , H01L31/03687 , H01L31/03845 , H01L31/03926 , H01L31/076 , Y02E10/52 , Y02E10/545 , Y02E10/548
摘要： Disclosed is a photovoltaic device. The photovoltaic device includes: a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.
摘要翻译：公开了一种光伏器件。光电器件包括：基板; 放置在基板上的第一电极; 与第一电极相对设置并且入射的第二电极; 第一单元电池被放置在第一电极和第二电极之间，并且包括本征半导体层，其包括使本征半导体层的表面朝向第二电极纹理化的晶体硅晶粒; 以及放置在第一单元电池和第二电极之间的第二单元电池。

10. 发明授权

US09018034B2 Apparatus and method for manufacturing of thin film type solar cell 有权
标题翻译：薄膜型太阳能电池的制造方法及装置
公开(公告)号：US09018034B2
公开(公告)日：2015-04-28
申请号：US13227978
申请日：2011-09-08
申请人： Cheol Hoon Yang
发明人： Cheol Hoon Yang
IPC分类号： H01L21/00 , H01L31/18 , H01L21/67 , H01L21/677 , H01L31/075 , H01L31/076 , H01L31/0463
CPC分类号： H01L31/18 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67173 , H01L21/6776 , H01L31/022425 , H01L31/0463 , H01L31/0468 , H01L31/075 , H01L31/076 , Y02E10/548
摘要： Disclosed is an apparatus and method for manufacturing a thin film type solar cell, which enables the enhancement of productivity, the apparatus for manufacturing a thin film type solar cell including a first electrode forming unit; a first separation part; an optoelectric conversion layer forming unit; a contact line forming unit; a printing unit; and an etching process unit, wherein the etching process unit removes the optoelectric conversion layer in a second separation part to expose the first electrode in the second separation part through a wet etching process.
摘要翻译：公开了一种能够提高生产率的薄膜型太阳能电池的制造装置和方法，包括第一电极形成单元的薄膜型太阳能电池的制造装置; 第一分离部分; 光电转换层形成单元; 接触线形成单元; 印刷单元; 以及蚀刻处理单元，其中所述蚀刻处理单元去除第二分离部分中的光电转换层，以通过湿法蚀刻工艺暴露第二分离部分中的第一电极。

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