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81. 发明授权

US09240338B2 Workpiece alignment device 有权
标题翻译：工件对准装置
公开(公告)号：US09240338B2
公开(公告)日：2016-01-19
申请号：US14468732
申请日：2014-08-26
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： Malcolm N. Daniel , Charles T. Carlson , William T. Weaver
IPC分类号： H01L21/67 , H01L21/68 , H01L21/677 , B65G49/07
CPC分类号： H01L21/68 , B65G49/07 , H01L21/67769 , H01L21/67775 , H01L21/67781 , H01L21/681 , Y10T29/49764 , Y10T29/49829 , Y10T29/53022 , Y10T29/53539
摘要： An alignment device has a carriage, two rails on the carriage that are configured for a workpiece to pass therebetween, and a finger that protrudes a distance from the carriage. The finger is configured to be disposed on a carrier for the workpieces. The workpieces may be solar cells and may pass through the rails on a conveyor belt. The alignment device may move in order to align the workpieces as the workpieces are loaded into a carrier.
摘要翻译：对准装置具有滑架，滑架上的两个轨道，其构造成用于工件通过它们;以及从滑架突出一定距离的手指。手指被配置为设置在用于工件的载体上。工件可以是太阳能电池，并且可以通过传送带上的轨道。当工件装载到载体中时，对准装置可以移动以便对齐工件。

82. 发明授权

US09232628B2 Method and system for plasma-assisted ion beam processing 有权
标题翻译：等离子体辅助离子束加工的方法和系统
公开(公告)号：US09232628B2
公开(公告)日：2016-01-05
申请号：US13771428
申请日：2013-02-20
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Svetlana B. Radovanov , Ludovic Godet , Bon-Woong Koo
IPC分类号： H01L21/00 , C23C16/00 , H05H3/00 , C23C16/452 , H01J37/32 , C23C16/04 , C23C16/507
CPC分类号： H05H3/00 , C23C16/045 , C23C16/452 , C23C16/507 , H01J37/32146 , H01J37/32357 , H01J37/32412 , H01J37/32706
摘要： A system for processing a substrate may include a first chamber operative to define a first plasma and a second chamber adjacent the first chamber, where the second chamber is electrically isolated from the first chamber, and configured to define a second plasma. The system may also include an extraction assembly disposed between the first chamber and second chamber to provide at least plasma isolation between the first plasma and the second plasma, a substrate assembly configured to support the substrate in the second chamber; and a biasing system configured to supply a plurality of first voltage pulses to direct first ions from the first plasma through the second chamber towards the substrate during one time period, and to supply a plurality of second voltage pulses to generate the second plasma and to attract second ions from the second plasma during another time period.
摘要翻译：用于处理衬底的系统可以包括可操作地限定第一等离子体的第一室和邻近第一室的第二室，其中第二室与第一室电隔离，并且被配置为限定第二等离子体。系统还可以包括设置在第一室和第二室之间的提取组件，以在第一等离子体和第二等离子体之间提供至少等离子体隔离;衬底组件，被配置为将衬底支撑在第二室中; 以及偏置系统，被配置为提供多个第一电压脉冲以在一个时间段期间将来自所述第一等离子体的第一离子通过所述第二室朝向所述衬底引导，并且提供多个第二电压脉冲以产生所述第二等离子体并且吸引在另一时间段期间来自第二等离子体的第二离子。

83. 发明授权

US09214369B2 Dynamic pitch substrate lift 有权
标题翻译：动态俯仰基板升降
公开(公告)号：US09214369B2
公开(公告)日：2015-12-15
申请号：US14069678
申请日：2013-11-01
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Robert B. Vopat , Jason M. Schaller , Jeffrey Charles Blahnik , Malcolm N. Daniel, Jr.
IPC分类号： H01L21/677 , H01L21/67 , H01L21/687
CPC分类号： H01L21/67201 , H01L21/67781 , H01L21/68742
摘要： An apparatus for dynamically adjusting the pitch between substrates in a substrate stack comprises first and second lift portions. The first lift portion supports a first group of the plurality of substrates, and the second lift portion supports a second group of the plurality of substrates. The first and second lift portions are operable to move the first and second groups of substrates in a first direction independently from each other. This independent movement enables the pitch, or spacing, between adjacent substrates to be dynamically adjusted so that an end effector of a robot can be positioned between such adjacent substrates to pick one of the substrates without inadvertently engaging another substrate that is not being picked. Other embodiments are disclosed.
摘要翻译：用于动态地调节衬底叠层中的衬底间距的装置包括第一和第二提升部分。所述第一提升部分支撑所述多个基板中的第一组，所述第二提升部分支撑所述多个基板的第二组。第一和第二提升部分可操作以在第一方向上彼此独立地移动第一组和第二组基板。这种独立运动使相邻基底之间的间距或间距能够被动态地调节，使得机器人的末端执行器可以位于这些相邻基底之间，以便拾取其中一个基底，而不会无意地接合另一个未被拾取的基底。公开了其他实施例。

84. 发明授权

US09202734B2 Electrostatic charge removal for solar cell grippers 有权
标题翻译：太阳能电池夹具的静电除电
公开(公告)号：US09202734B2
公开(公告)日：2015-12-01
申请号：US14714645
申请日：2015-05-18
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Jason Schaller , Robert Brent Vopat
IPC分类号： H05F3/02 , B65G49/06 , H01L21/677 , B25J15/06 , B25J11/00
CPC分类号： H01L21/67706 , B25J11/0095 , B25J15/0616 , B65G49/06 , B65G2207/10 , B65G2812/16 , H01L21/67742 , H01L21/67766 , H01L21/67781 , H05F3/02
摘要： A manufacturing system includes a gantry module, having an end effector, for moving workpieces from a conveyor system to a working area, such as a swap module. The swap module removes a matrix of processed workpieces from a load lock and place a matrix of unprocessed workpieces in its place. The processed workpieces are then moved by the gantry module back to the conveyor. Due to the speed of operation, the end effector may build up excessive electrostatic charge. To remove this built up charge, grounded electrically-conductive brushes are strategically positioned so that, as the end effector moves during normal operation, it comes in contact with these brushes. This removes this built up charge on the end effector, without affecting throughput. In another embodiment, the end effector moves over the brushes while the swap module is moving matrix to and from the load lock.
摘要翻译：制造系统包括具有末端执行器的台架模块，用于将工件从输送机系统移动到诸如交换模块的工作区域。交换模块从加载锁中移除经处理的工件的矩阵，并将未加工的工件的矩阵放置在其位置。然后将经处理的工件通过台架模块移回到输送机。由于操作速度，末端执行器可能会积聚过多的静电电荷。为了消除这个建立的电荷，接地的导电刷被策略地定位，使得当正常操作中末端执行器移动时，它与这些刷子接触。这可以消除末端执行器上的这种建立的电荷，而不会影响吞吐量。在另一个实施例中，端部执行器在电刷上移动，而交换模块正在移动矩阵到和从加载锁定。

85. 发明申请

US20150325464A1 SYSTEM AND APPARATUS FOR HOLDING A SUBSTRATE OVER WIDE TEMPERATURE RANGE 有权
标题翻译：用于在宽温度范围内保持基板的系统和装置
公开(公告)号：US20150325464A1
公开(公告)日：2015-11-12
申请号：US14275779
申请日：2014-05-12
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Roger B. Fish , W. Davis Lee
IPC分类号： H01L21/683 , H01L21/67
CPC分类号： H01L21/68742 , H01L21/67103 , H01L21/6831 , H01L21/6833
摘要： An apparatus to support a substrate may include a base, a clamp portion to apply a clamping voltage to the substrate, and a displacement assembly configured to hold the clamp portion and base together in a first operating position, and to move the clamp portion with respect to the base from the first operating position to a second operating position, wherein the clamp portion and base are separate from one another in the second operating position.
摘要翻译：用于支撑基板的装置可以包括基座，用于向基板施加钳位电压的夹持部分以及构造成将夹持部分保持在第一操作位置并且将夹持部分相对于第一操作位置移动的位移组件从第一操作位置到第二操作位置到基座，其中夹紧部分和基部在第二操作位置彼此分离。

86. 发明授权

US09163772B2 Vacuum insulated cryogenic fluid transfer hose 有权
标题翻译：真空绝缘低温流体输送软管
公开(公告)号：US09163772B2
公开(公告)日：2015-10-20
申请号：US13540271
申请日：2012-07-02
申请人： Roger B. Fish , Michael D. Santorella
发明人： Roger B. Fish , Michael D. Santorella
IPC分类号： F16L59/21 , F16L27/11 , F16L59/065 , F16L59/18 , F16L59/14
CPC分类号： F16L59/065 , F16L59/141 , F16L59/18 , Y10T137/0402
摘要： A vacuum insulated cryogenic fluid transfer hose provides a fluid conduit and high-pressure fitting with a highly-insulative vacuum jacket which enables convenient access to the fitting. An interface collar is mounted to an end of the transfer hose with the fluid conduit and the fitting extending therethrough, a bellows fastened at a first end to an interior of the interface collar and fastened at a second end to a pass-through collar, a slide cuff mounted to the pass-through collar and extending over the bellows and the interface collar, and a connecting nut mounted to the pass-through collar. The slide cuff is displaceable relative to the interface collar between a retracted position, wherein the connecting nut, the pass-through collar, and the bellows are retracted to expose and provide access to the fitting, and an extended position, wherein the fitting is entirely covered by the enclosure.
摘要翻译：真空绝缘低温流体输送软管提供具有高绝缘真空护套的流体导管和高压配件，能够方便地接近配件。接口套环安装到输送软管的端部，流体导管和配件延伸穿过其中，波纹管在第一端处固定到接口套环的内部，并在第二端处固定到通过套环，滑动袖带安装到穿过套环上并且在波纹管和接口套环上延伸，以及安装到穿过套环的连接螺母。滑动袖带相对于接口套环在缩回位置之间移位，其中连接螺母，直通套环和波纹管被缩回以暴露并提供对配件的接近以及延伸位置，其中配件完全是被外壳覆盖。

87. 发明授权

US09153444B2 Process flow for replacement metal gate transistors 有权
标题翻译：更换金属栅晶体管的工艺流程
公开(公告)号：US09153444B2
公开(公告)日：2015-10-06
申请号：US13921717
申请日：2013-06-19
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Ying Zhang , Steven Sherman
IPC分类号： H01L21/28 , H01L21/311 , H01L21/66
CPC分类号： H01L21/28008 , H01L21/311 , H01L21/31105 , H01L21/32131 , H01L22/12 , H01L22/26 , H01L29/66545 , H01L29/66553 , H01L29/66583
摘要： A replacement metal gate transistor and methods of forming replacement metal gate transistors are described. Various examples provide methods of manufacturing a replacement metal gate transistor that includes depositing a dielectric layer into a trench, wherein the dielectric layer is deposited onto the bottom of the trench and the sidewalls of the trench, depositing a first metal layer into the trench, wherein the first metal layer is deposited onto the bottom of the trench and the sidewalls of the trench over the dielectric layer, depositing a second metal layer into the trench, wherein the second metal layer is deposited onto the bottom of the trench and the sidewalls of the trench over the first metal layer, removing at least a portion of the second metal layer from the sidewalls of the trench, and depositing a conducting layer into the trench. Other embodiments are disclosed and claimed.
摘要翻译：描述替代金属栅极晶体管和形成替换金属栅极晶体管的方法。各种示例提供了制造替代金属栅极晶体管的方法，其包括将电介质层沉积到沟槽中，其中介电层沉积在沟槽的底部和沟槽的侧壁上，将第一金属层沉积到沟槽中，其中第一金属层沉积在沟槽的底部和介电层上的沟槽的侧壁上，将第二金属层沉积到沟槽中，其中第二金属层沉积在沟槽的底部上，并且第二金属层的侧壁在所述第一金属层上方的沟槽，从所述沟槽的侧壁去除所述第二金属层的至少一部分，以及将导电层沉积到所述沟槽中。公开和要求保护其他实施例。

88. 发明授权

US09142392B2 Self-cleaning radio frequency plasma source 有权
标题翻译：自清洗射频等离子体源
公开(公告)号：US09142392B2
公开(公告)日：2015-09-22
申请号：US13958809
申请日：2013-08-05
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Neil J. Bassom
IPC分类号： H01J37/32
CPC分类号： H01J37/32853 , H01J37/321 , H01J37/3211 , H01J37/32862 , H01J37/32899 , H01J37/32981
摘要： A self-cleaning radio frequency (RF) plasma source for a semiconductor manufacturing process is described. Various examples provide an RF plasma source comprising an RF antenna and a rotatable dielectric sleeve disposed around the RF antenna. The dielectric is positioned between a process chamber and cleaning chamber such that portions of the surface of the dielectric may be exposed to either the process chamber or the cleaning chamber. As material is deposited on the outer surface of the dielectric in the process chamber, the dielectric sleeve is rotated so that the portion containing the buildup is exposed to the cleaning chamber. A sputtering process in the cleaning chamber removes the buildup from the surface of the sleeve. The dielectric sleeve is then rotated so that it exposed to the process chamber. Other embodiments are disclosed and claimed.
摘要翻译：描述了用于半导体制造工艺的自清洁射频（RF）等离子体源。各种示例提供了RF等离子体源，其包括设置在RF天线周围的RF天线和可旋转介质套筒。电介质位于处理室和清洁室之间，使得电介质的表面的一部分可以暴露于处理室或清洁室中。当材料沉积在处理室中的电介质的外表面上时，电介质套筒被旋转，使得包含积聚物的部分暴露于清洁室。在清洁室中的溅射工艺从套筒的表面去除积聚。然后使电介质套筒旋转，使其暴露于处理室。公开和要求保护其他实施例。

89. 发明授权

US09121879B2 Techniques for improving reliability of a fault current limiting system 有权
标题翻译：提高故障限流系统可靠性的技术
公开(公告)号：US09121879B2
公开(公告)日：2015-09-01
申请号：US13493782
申请日：2012-06-11
申请人： Kasegn D. Tekletsadik , Paul J. Murphy , Mark R. Amato , James D. Strassner
发明人： Kasegn D. Tekletsadik , Paul J. Murphy , Mark R. Amato , James D. Strassner
IPC分类号： G01R31/25 , G01R31/00 , H02H9/08 , G01R33/12 , H02H7/00
CPC分类号： G01R31/00 , G01R33/1238 , H02H7/001 , H02H9/08 , Y02E40/68
摘要： Techniques for improving reliability of a superconducting fault current limiting system (SCFCL) are provided. In one particular exemplary embodiment, the technique may be realized as a method of improving a reliability of a superconducting fault current limiting system (SCFCL), the SCFCL system comprising a superconductor provided in a container. The method may comprise providing one or more sensors capable of detecting a fault current proximate to the superconductor; determining a change in the condition of the superconductor as a result of the fault current; and estimating the lifetime of the superconductor based on the change in the condition of the superconductor.
摘要翻译：提供了一种用于提高超导故障限流系统（SCFCL）可靠性的技术。在一个特定的示例性实施例中，该技术可以被实现为提高超导故障电流限制系统（SCFCL）的可靠性的方法，SCFCL系统包括设置在容器中的超导体。该方法可以包括提供能够检测接近超导体的故障电流的一个或多个传感器; 确定故障电流导致超导体状态的变化; 并根据超导体状态的变化估计超导体的寿命。

90. 发明申请

US20150214339A1 TECHNIQUES FOR ION IMPLANTATION OF NARROW SEMICONDUCTOR STRUCTURES 审中-公开
标题翻译：用于半导体结构的离子注入技术
公开(公告)号：US20150214339A1
公开(公告)日：2015-07-30
申请号：US14163739
申请日：2014-01-24
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： ANDREW M. WAITE , KALIPATNAM VIVEK RAO
IPC分类号： H01L29/66 , H01L29/167 , H01L21/324 , H01L21/265
CPC分类号： H01L29/66803 , H01L21/26506 , H01L21/26513 , H01L21/26586 , H01L21/324
摘要： A method to process a semiconductor device includes performing a first ion implant comprising first ions into a thin crystalline semiconductor structure, the first ion dose amorphizing a first region of the thin crystalline semiconductor structure; performing a second ion implant comprising dopant ions of a dopant species into at least the first region of the thin crystalline semiconductor structure; and performing at least one anneal of the semiconductor device after the first implant, wherein after the first and second implant and the at least one anneal, the thin crystalline semiconductor structure forms a mono-crystalline region without defects.
摘要翻译：一种处理半导体器件的方法包括：将包含第一离子的第一离子注入执行到薄晶体半导体结构中，所述第一离子剂量使所述薄晶体半导体结构的第一区域非晶化; 将包括掺杂剂物质的掺杂剂离子的第二离子注入进行到所述薄晶体半导体结构的至少第一区域; 以及在所述第一注入之后执行所述半导体器件的至少一次退火，其中在所述第一和第二注入和所述至少一个退火之后，所述薄晶体半导体结构形成无缺陷的单晶区域。

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