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1. 发明申请

US20170050223A1 CONTAMINANT CLEANING SYSTEMS AND RELATED METHODS USING ONE OR MORE REACTIVE SUBSTANCES, REACTION BYPRODUCT MEASUREMENTS, AND DIFFERENTIAL PRESSURE OR VACUUM TRANSFER OF THE REACTIVE SUBSTANCES AND REACTION BYPRODUCTS 审中-公开
标题翻译：污染物清洁系统和使用一个或多个反应物质的相关方法，通过产品测量的反应以及反应物质的差异压力或真空转移以及副产物的反应
公开(公告)号：US20170050223A1
公开(公告)日：2017-02-23
申请号：US15243769
申请日：2016-08-22
申请人： The United States of America as represented by the Secretary of the Navy
发明人： Mary M. Graupmann , Christopher H. Clark , Michael L. Bishop
IPC分类号： B08B7/00 , G01N33/00
CPC分类号： G01N33/0009 , H01J37/32862 , H01J37/32981
摘要： Contaminant cleaning systems and related methods are provided. Exemplary embodiments include a reactive substance generator to produce or transfer reactive substance(s) that react with contaminant(s) on an item into a cleaning chamber. An analysis section can be attached to the cleaning chamber to perform gas analysis on gas samples brought into the analysis chamber that measure reaction byproducts from the reactive substance(s) interaction with the contaminants. An exemplary valve system can selectively couple the reactive substance generator, the analysis section, and the cleaning chamber. An exemplary pumping system, in combination with the valve system, can selectively generate differential pressure/vacuum levels between the reactive substance generator vs cleaning chamber as well as between the cleaning chamber and analysis section. For example, the analysis chamber can be configured to have a higher vacuum than the cleaning chamber to facilitate passage of gas test samples into the analysis chamber.
摘要翻译：提供污染物清洁系统及相关方法。示例性实施例包括用于产生或转移与物品上的污染物反应进入清洁室的反应物质的反应物质发生器。分析部分可以连接到清洁室，以对进入分析室的气体样品进行气体分析，测量来自反应物质与污染物的相互作用的反应副产物。示例性的阀系统可以选择性地联接反应物质发生器，分析部分和清洁室。与阀系统组合的示例性泵送系统可以选择性地在反应物质发生器与清洁室之间以及清洁室和分析部之间产生差压/真空水平。例如，分析室可被配置为具有比清洁室更高的真空度，以便气体测试样品通过分析室。

2. 发明授权

US09318305B2 Method for producing micro plasma with biocompatibility 有权
标题翻译：具有生物相容性的微血浆生产方法
公开(公告)号：US09318305B2
公开(公告)日：2016-04-19
申请号：US14230133
申请日：2014-03-31
申请人： National Cheng Kung University
发明人： Jiunn-Der Liao , Pei-Lin Shao
IPC分类号： H01J7/24 , H01J37/32 , A61N1/44
CPC分类号： A61N1/44 , A61M37/00 , H01J37/32449 , H01J37/32981 , H05H2245/122
摘要： The object of the present invention is to provide a method for producing a micro-plasma with biocompatibility. The produced micro-plasma is a low temperature, adjustable micro-plasma with low energy consumption. The method provides a device comprising a first gas storage unit, a second gas storage unit, a unit for producing the micro-plasma, and a power supply unit.
摘要翻译：本发明的目的是提供一种具有生物相容性的微血浆的制造方法。所生产的微等离子体是低能量可调微型等离子体，能耗低。该方法提供了包括第一气体存储单元，第二气体存储单元，用于产生微等离子体的单元和电源单元的装置。

3. 发明申请

US20150279629A1 METHOD FOR PRODUCING MICRO PLASMA WITH BIOCOMPATIBILITY 有权
标题翻译：生产微生物等离子体的方法
公开(公告)号：US20150279629A1
公开(公告)日：2015-10-01
申请号：US14230133
申请日：2014-03-31
申请人： National Cheng Kung University
发明人： Jiunn-Der LIAO
IPC分类号： H01J37/32 , A61N1/44
CPC分类号： A61N1/44 , A61M37/00 , H01J37/32449 , H01J37/32981 , H05H2245/122
摘要： The object of the present invention is to provide a method for producing a micro-plasma with biocompatibility. The produced micro-plasma is a low temperature, adjustable micro-plasma with low energy consumption. The method provides a device comprising a first gas storage unit, a second gas storage unit, a unit for producing the micro-plasma, and a power supply unit.
摘要翻译：本发明的目的是提供一种具有生物相容性的微血浆的制造方法。所生产的微等离子体是低能量可调微型等离子体，能耗低。该方法提供了包括第一气体存储单元，第二气体存储单元，用于产生微等离子体的单元和电源单元的装置。

4. 发明授权

US08933399B2 Mass spectrometry device including self-cleaning unit 有权
标题翻译：质谱装置包括自清洁装置
公开(公告)号：US08933399B2
公开(公告)日：2015-01-13
申请号：US14123310
申请日：2012-04-09
申请人： Makoto Sampei
发明人： Makoto Sampei
IPC分类号： H01J49/40 , H01J49/10 , G01N33/18 , H01J49/02 , H01J37/32 , G01N27/62 , H01J49/06
CPC分类号： H01J49/02 , G01N27/624 , H01J37/32862 , H01J37/32917 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J49/067
摘要： When a specimen from a specimen ionizing unit is not sufficiently ionized, is caused to remain in sites other than a pore in an introducing section and be deposited as a product such as an oxide or carbide, which causes a deterioration in the performance of the mass spectrometry device. The mass spectrometry device has a specimen ionizing section for ionizing a specimen, a specimen-introduction regulating chamber into which ions of the ionized specimen are introduced, a differential evacuation chamber located downstream of the specimen-introduction regulating chamber, and an analyzing section located at the downstream side of the differential evacuation chamber, in which a discharge generating means is formed for generating an electric discharge inside the specimen-introduction regulating chamber and/or the differential evacuation chamber. The discharge generating means has a specimen introducing section electrode and a first-pore-section-forming member located oppositely to each other inside the specimen-introduction regulating chamber.
摘要翻译：当来自试样离子化单元的试样没有充分离子化时，导致在导入部中残留在孔以外的部位，作为氧化物或碳化物等的制品析出，导致质量的性能下降光谱仪该质谱装置具有用于使试样离子化的试样离子化部，引入离子化试样的离子的试样导入调节室，位于试样导入调节室下游的差动抽空室，以及分析部其中形成有用于在试样导入调节室和/或差动抽空室内产生放电的排放发生装置的差动排空室的下游侧。放电产生装置具有在试样导入调节室内部彼此相对设置的试样导入部电极和第一孔部形成部件。

5. 发明申请

US20130055818A1 PRESSURE CONTROL IN CONTINUOUS PLASMA DEPOSITION PROCESSES 审中-公开
标题翻译：连续等离子体沉积过程中的压力控制
公开(公告)号：US20130055818A1
公开(公告)日：2013-03-07
申请号：US13224112
申请日：2011-09-01
申请人： Joachim Doehler
发明人： Joachim Doehler
IPC分类号： G01L11/02
CPC分类号： G01L11/02 , G01N15/14 , G01N21/51 , G01N21/73 , G01N2021/215 , H01J37/32816 , H01J37/32935 , H01J37/32981 , H01J37/3299
摘要： Processes of identifying small pressure irregularities in a system used for continuous plasma deposition are provided. Sensitive light scattering is used to detect the presence of nucleated particles in a detection area that is outside the plasma region of high electric field whereby the presence of the particles indicates a pressure abnormality in the plasma deposition chamber. The pressure of the plasma deposition chamber is then adjusted to reduce or eliminate the presence of particles within the detection area and to optimize deposition of material on a substrate.
摘要翻译：提供了确定用于连续等离子体沉积的系统中的小压力不规则性的方法。敏感光散射用于检测在高电场等离子体区域外的检测区域中有核粒子的存在，由此存在颗粒表示等离子体沉积室中的压力异常。然后调整等离子体沉积室的压力以减少或消除检测区域内的颗粒的存在并优化材料在基底上的沉积。

6. 发明申请

US20110295554A1 Equipment For Manufacturing Semiconductor Device And Seasoning Process Method Of The Same 有权
标题翻译：制造半导体器件的设备及其调味工艺方法
公开(公告)号：US20110295554A1
公开(公告)日：2011-12-01
申请号：US13115401
申请日：2011-05-25
申请人： Kye Hyun Baek , Sangwuk Park , Geum Jung Seong , Yongjin Kim
发明人： Kye Hyun Baek , Sangwuk Park , Geum Jung Seong , Yongjin Kim
IPC分类号： G06F19/00 , G06F15/00 , G06F17/10
CPC分类号： H01L21/3065 , G05B17/02 , H01J37/32853 , H01J37/3288 , H01J37/32981 , H01J37/3299
摘要： Disclosed is an apparatus for processing a semiconductor and a method for generating a seasoning process of a reaction chamber. The method may include generating plasma in the reaction chamber using a production process recipe, obtaining at least one reference measurement value related to a byproduct of the generated plasma, performing a plurality of seasoning tests on the chamber to obtain a plurality of test results, generating an empirical model by forming at least one relational expression correlating variables manipulated during the performing of the plurality of seasoning tests to the plurality of test results, and estimating a seasoning process by using the at least one relational expression to estimate at least one estimated calculation value.
摘要翻译：公开了一种用于处理半导体的装置和用于产生反应室的调味过程的方法。该方法可以包括使用生产工艺配方在反应室中产生等离子体，获得与产生的等离子体的副产物相关的至少一个参考测量值，在室上执行多个调味试验以获得多个测试结果，产生通过形成至少一个关系表达式的经验模型，所述至少一个关系表达将在执行多个调味测试期间操纵的变量与多个测试结果相关联，并且通过使用至少一个关系表达式估计调节过程以估计至少一个估计的计算值。

7. 发明授权

US07296458B2 Nickel-coated free-standing silicon carbide structure for sensing fluoro or halogen species in semiconductor processing systems, and processes of making and using same 有权
标题翻译：用于在半导体处理系统中感测氟或卤素物质的镀镍独立碳化硅结构，以及制造和使用它们的方法
公开(公告)号：US07296458B2
公开(公告)日：2007-11-20
申请号：US10784606
申请日：2004-02-23
申请人： Frank Dimeo, Jr. , Philip S. H. Chen , Ing-Shin Chen , Jeffrey W. Neuner , James Welch
发明人： Frank Dimeo, Jr. , Philip S. H. Chen , Ing-Shin Chen , Jeffrey W. Neuner , James Welch
IPC分类号： G01N7/00
CPC分类号： G01N27/16 , G01N27/128 , H01J37/3244 , H01J37/32935 , H01J37/32981
摘要： A (MEMS)-based gas sensor assembly for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. Such gas sensor assembly in a preferred embodiment comprises a free-standing silicon carbide support structure having a layer of a gas sensing material, preferably nickel or nickel alloy, coated thereon. Such gas sensor assembly is preferably fabricated by micro-molding techniques employing sacrificial molds that are subsequently removable for forming structure layers.
摘要翻译：一种基于（MEMS）的气体传感器组件，用于检测含有其的气体中的含氟物质，例如，经历HF HF，NF 3等蚀刻清洗的半导体处理工具的流出物。在优选实施例中的气体传感器组件包括独立的碳化硅支撑结构，其具有涂覆在其上的气体感测材料层，优选镍或镍合金层。这种气体传感器组件优选地通过使用牺牲模具的微型模制技术来制造，该牺牲模具随后可拆卸以形成结构层。

8. 发明授权

US07228724B2 Apparatus and process for sensing target gas species in semiconductor processing systems 有权
标题翻译：用于在半导体处理系统中感测目标气体种类的装置和方法
公开(公告)号：US07228724B2
公开(公告)日：2007-06-12
申请号：US10758825
申请日：2004-01-16
申请人： Philip S. H. Chen , Ing-Shin Chen , Frank Dimeo, Jr. , Jeffrey W. Neuner , James Welch , Jeffrey F. Roeder
发明人： Philip S. H. Chen , Ing-Shin Chen , Frank Dimeo, Jr. , Jeffrey W. Neuner , James Welch , Jeffrey F. Roeder
IPC分类号： G01N19/10
CPC分类号： G01N27/128 , H01J37/3244 , H01J37/32935 , H01J37/32981
摘要： A gas detector for detecting a fluoro gas species in a gaseous environment containing same, e.g., an effluent from a semiconductor processing tool that employs corrosive fluoro species such as HF, NF3, etc. for etch cleaning. The gas detector preferably employs an elongated nickel-containing gas sensor element that can be vertically mounted on a fluoro-resistant support structure. Since the nickel-containing gas sensor element is sensitive to the fluoro species and is also electrically conductive, it can function both as a sensing component and a heat source when elevated temperature sensing is required. Vertical mounting of such elongated gas sensor element on the support structure significantly improves the signal strength, reduces the response time, minimizes the footprint of the gas detector, and provides structural flexibility for accommodating thermal expansion/contraction of the elongated gas sensor element.
摘要翻译：一种气体检测器，用于在含有其的气体环境中检测氟气体物质，例如来自使用腐蚀性氟物质如HF，NF 3等的用于蚀刻清洁的半导体加工工具的流出物。气体检测器优选使用可以垂直安装在耐氟支撑结构上的细长的含镍气体传感器元件。由于含镍气体传感器元件对氟物质敏感并且也是导电的，所以当需要高温感测时，它可以用作感测部件和热源。这种细长气体传感器元件在支撑结构上的垂直安装显着地改善了信号强度，减少了响应时间，使气体检测器的占地面积最小化，并提供了用于适应细长气体传感器元件的热膨胀/收缩的结构灵活性。

9. 发明授权

US06975393B2 Method and apparatus for implementing an afterglow emission spectroscopy monitor 失效
标题翻译：用于实现余辉发射光谱监测器的方法和装置
公开(公告)号：US06975393B2
公开(公告)日：2005-12-13
申请号：US10386584
申请日：2003-03-11
申请人： Jacob Mettes
发明人： Jacob Mettes
IPC分类号： G01N21/68 , G01J3/443
CPC分类号： H01J37/32981 , G01N21/68 , H01J37/32935
摘要： Afterglow spectroscopy allows observing light emission of gaseous species in absence of direct plasma light. This absence avoids the creation of a background spectrum obscuring weak emission from trace species. The invention describes a flowing afterglow version monitoring in-situ the cleanup of vacuum tools during pump/purge cycles. The invention also describes an intermittent afterglow version suitable for trace gas analysis at atmospheric pressure.
摘要翻译：余辉光谱法允许在没有直接等离子体光的情况下观察气态物质的发光。这种缺陷避免了产生背景光谱，掩盖了微量物质的弱发射。本发明描述了在泵/清洗循环期间原位监测真空工具的流动余辉版本。本发明还描述了适用于大气压力下的痕量气体分析的间歇余辉型。

10. 发明申请

US20180158657A1 METHODS AND SYSTEMS FOR CHAMBER MATCHING AND MONITORING 审中-公开
公开(公告)号：US20180158657A1
公开(公告)日：2018-06-07
申请号：US15832257
申请日：2017-12-05
申请人： Tokyo Electron Limited
发明人： Jun Shinagawa
IPC分类号： H01J37/32 , G01N21/73
CPC分类号： H01L21/3065 , G01J3/443 , G01N21/68 , G01N21/73 , H01J37/32183 , H01J37/32935 , H01J37/32972 , H01J37/32981 , H01J37/3299 , H01J2237/24507 , H01J2237/24585 , H01J2237/334 , H01L21/67069 , H01L21/67248 , H01L21/67253 , H01L22/10 , H01L22/12 , H01L22/20 , H01L22/26
摘要： A method and a system for plasma etching are provided. The method includes measuring a first set of plasma etch processing parameters; determining an etch rate; altering the plasma etch processing chamber hardware configuration if the determined etch rate differs from a standard etch rate by more than a predetermined etch rate difference threshold, thereafter repeating the determining and altering until the determined etch rate differs from the standard etch rate by less than the predetermined etch rate difference threshold. The method further includes measuring a critical dimension of an etched feature and altering the etch processing parameters if the measured critical dimension differs from a standard critical dimension by more than a predetermined critical dimension difference threshold, thereafter repeating the determining and altering until the measured critical dimension differs from the standard critical dimension by less than the predetermined critical dimension difference threshold.

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