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1. 发明申请

US20130168255A1 COPPER-ELECTROPLATING COMPOSITION AND PROCESS FOR FILLING A CAVITY IN A SEMICONDUCTOR SUBSTRATE USING THIS COMPOSITION 审中-公开
标题翻译：铜电镀组合物和使用该组合物在半导体衬底中填充空穴的方法
公开(公告)号：US20130168255A1
公开(公告)日：2013-07-04
申请号：US13703515
申请日：2011-06-09
申请人： Nadia Frederich , Frédéric Raynal , José Gonzalez
发明人： Nadia Frederich , Frédéric Raynal , José Gonzalez
IPC分类号： C25D3/38
CPC分类号： C25D7/12 , C25D3/38 , C25D7/123 , H01L21/2885 , H01L21/76898
摘要： The subject-matter of the present invention is a composition especially intended for filling, by the electroplating of copper, a cavity in a semiconductor substrate such as a “through-via” structure for the production of interconnects in three-dimensional integrated circuits.According to the invention, this composition comprises in solution in a solvent: copper ions in a concentration lying between 45 and 1500 mM; a complexing agent for the copper consisting of at least one compound chosen from aliphatic polyamines having 2 to 4 amino groups, preferably ethylenediamine, in a concentration lying between 45 and 3000 mM; the molar ratio between the copper and said complexing agent lying between 0.1 and 5; thiodiglycolic acid in a concentration lying between 1 and 500 mg/l; and optionally a buffer system, in particular ammonium sulfate, in a concentration lying between 0.1 and 3M.
摘要翻译：本发明的主题是特别旨在通过铜的电镀来填充诸如“通孔”结构的半导体衬底中的空腔的组合物，用于在三维集成电路中制造互连。根据本发明，该组合物在溶剂中包含浓度在45和1500mM之间的铜离子; 由至少一种选自具有2-4个氨基的脂族多胺，优选乙二胺的化合物组成的铜络合剂，其浓度介于45和3000mM之间; 铜和络合剂之间的摩尔比在0.1和5之间; 浓度在1至500mg / l之间的硫二甘醇酸; 和任选的浓度在0.1和3M之间的缓冲系统，特别是硫酸铵。

2. 发明授权

US08405217B2 Coating method and solutions for enhanced electromigration resistance 有权
标题翻译：涂层方法和增强电迁移性的解决方案
公开(公告)号：US08405217B2
公开(公告)日：2013-03-26
申请号：US11714435
申请日：2007-03-05
申请人： Isabelle Bispo , Nathalie Thieriet , Paolo Mangiagalli
发明人： Isabelle Bispo , Nathalie Thieriet , Paolo Mangiagalli
IPC分类号： H01L23/532
CPC分类号： H01L21/76834 , H01L21/76832
摘要： The present invention concerns a methods and compositions for preparing a multi layer composite device, such as a semiconductor device.Said method comprises (A) forming a dielectric layer on the surface of a composite material by bringing said surface into contact: a) either with a solution, comprising the diazonium salt of aniline, a diazonium salt bearing at least one functional group or an amine compound of formula H2N-A-X—Z as defined in claim 1: b) or with a first solution containing an aryl diazonium salt and successively a second solution containing a compound bearing at least one functional group and bearing at least one functional group capable of reacting with the aryl radical grafted on the surface of the composite material thanks to the aryl diazonium salt; (B) forming an overlayer on said surface of said composite material obtained in step (A), said overlayer consisting of a Si-containing dielectric Cu-Etch Stop Layer and/or copper diffusion barrier.
摘要翻译：本发明涉及用于制备诸如半导体器件的多层复合器件的方法和组合物。所述方法包括（A）通过使所述表面接触，在复合材料的表面上形成电介质层：a）用包含苯胺的重氮盐，含有至少一个官能团的重氮盐或胺的溶液 b）或含有芳基重氮盐的第一溶液，以及依次含有含有至少一个官能团并具有至少一个能够反应的官能团的化合物的第二溶液的式H2N-AX-Z的化合物由于芳基重氮盐，芳基自由基接枝在复合材料的表面上; （B）在步骤（A）中获得的所述复合材料的所述表面上形成覆盖层，所述覆盖层由含Si的介电Cu蚀刻停止层和/或铜扩散阻挡层组成。

3. 发明申请

US20110294231A1 METHOD FOR REPAIRING COPPER DIFFUSION BARRIER LAYERS ON A SEMICONDUCTOR SOLID SUBSTRATE AND REPAIR KIT FOR IMPLEMENTING THIS METHOD 失效
标题翻译：在半导体固体基板上修复铜扩散阻挡层的方法和用于实施该方法的维修工具
公开(公告)号：US20110294231A1
公开(公告)日：2011-12-01
申请号：US13003451
申请日：2009-09-07
申请人： Vincent Mevellec
发明人： Vincent Mevellec
IPC分类号： H01L21/02 , C09D1/00 , B82Y30/00
CPC分类号： C23C18/1893 , C23C18/31 , C23C18/34 , H01L21/288 , H01L21/76846 , H01L21/76868 , H01L21/76873 , H01L21/76898
摘要： Method for repairing copper diffusion barrier layers on a semiconductor solid substrate and repair kit for implementing this method.One subject of the present invention is a method for repairing a surface of a substrate coated with a discontinuous copper diffusion barrier layer of a titanium-based material.According to the invention, this method comprises: a) the contacting of the surface with a suspension containing copper or copper alloy nanoparticles for a time of between 1 s and 15 min; and b) the contacting of the thus treated surface with a liquid solution having a pH of between 8.5 and 12 and containing: at least one metal salt, at least one reducing agent, at least one stabilizer at a temperature of between 50° C. and 90° C., preferably between 60° C. and 80° C., for a time of between 30 s and 10 min, preferably between 1 min and 5 min, in order to thus form a metallic film having a thickness of at least 50 nanometers re-establishing the continuity of the copper diffusion barrier layer.
摘要翻译：在半导体固体基板上修复铜扩散阻挡层的方法以及用于实施该方法的修理工具。本发明的一个主题是用于修复涂覆有钛基材料的不连续铜扩散阻挡层的基板的表面的方法。根据本发明，该方法包括：a）使表面与含有铜或铜合金纳米颗粒的悬浮液接触1至15分钟; 和b）如此处理的表面与pH为8.5至12的液体溶液的接触，并且在50℃的温度下含有至少一种金属盐，至少一种还原剂，至少一种稳定剂。 90℃，优选60℃至80℃，时间为30秒至10分钟，优选1分钟至5分钟，以便形成厚度为至少50纳米重新建立铜扩散阻挡层的连续性。

4. 发明申请

US20090294293A1 ELECTRODEPOSITION COMPOSITION AND METHOD FOR COATING A SEMICONDUCTOR SUBSTRATE USING THE SAID COMPOSITION 有权
标题翻译：电沉积组合物和使用该组合物涂覆半导体衬底的方法
公开(公告)号：US20090294293A1
公开(公告)日：2009-12-03
申请号：US12435031
申请日：2009-05-04
申请人： Said ZAHRAOUI , Frederic RAYNAL
发明人： Said ZAHRAOUI , Frederic RAYNAL
IPC分类号： C25D7/12 , C25D5/02
CPC分类号： C25D3/38 , C25D5/54 , C25D7/123 , H01L21/2885 , H01L21/76873 , H01L21/76898 , H05K3/423
摘要： The present invention relates to an electrodeposition composition intended particularly for coating a semiconductor substrate in order to fabricate structures of the “through via” type for the production of interconnects in integrated circuits. According to the invention, the said solution comprises copper ions in a concentration of between 14 and 120 mM and ethylenediamine, the molar ratio between ethylenediamine and copper being between 1.80 and 2.03 and the pH of the electrodeposition solution being between 6.6 and 7.5. The present invention also relates to the use of the said electrodeposition solution for the deposition of a copper seed layer, and to the method for depositing a copper a seed layer with the aid of the electrodeposition solution according to the invention.
摘要翻译：本发明涉及特别用于涂覆半导体衬底的电沉积组合物，以便制造用于在集成电路中生产互连的“通孔”型结构。根据本发明，所述溶液包含浓度为14至120mM的铜离子和乙二胺，乙二胺与铜之间的摩尔比为1.80至2.03，电沉积溶液的pH为6.6至7.5。本发明还涉及所述电沉积溶液用于沉积铜籽晶层的用途，以及借助于根据本发明的电沉积溶液沉积种子层的方法。

5. 发明授权

US10460945B2 Machine suitable for plating a cavity of a semi-conductive or conductive substrate such as a through via structure 有权
公开(公告)号：US10460945B2
公开(公告)日：2019-10-29
申请号：US14358659
申请日：2012-11-19
申请人： ALCHIMER
发明人： Frederic Raynal
IPC分类号： C25D17/00 , H01L21/288 , H01L21/768 , H01L23/48 , H01L21/67 , C25D5/02 , C25D17/06 , C23C18/16
摘要： The invention relates to a machine (1) adapted to metallize a cavity of a semi-conductive or conductive substrate such as a structure of the through silicon via type, according to a metallization process comprising the steps consisting of: a) depositing an insulating dielectric layer in the cavity, b) depositing a barrier layer to diffusion of the filling metal, c) filling the cavity by electrodeposition of metal, preferably copper, and d) carrying out annealing of the substrate, characterized in that it comprises a series of wet-processing modules (10-60) configured to conduct steps a), b) and c) by wet-processing in a chemical bath (B) and at least one additional module (70) adapted to conduct annealing step d) of the substrate (S) such that the machine (1) is capable of executing the entire metallization process of the cavity.

6. 发明授权

US08119542B2 Method of preparing an electrically insulating film and application for the metallization of vias 有权
标题翻译：制备电绝缘膜的方法和金属化通孔的应用
公开(公告)号：US08119542B2
公开(公告)日：2012-02-21
申请号：US12495137
申请日：2009-06-30
申请人： Vincent Mevellec , José Gonzalez , Dominique Suhr
发明人： Vincent Mevellec , José Gonzalez , Dominique Suhr
IPC分类号： H01L21/31
CPC分类号： H01L21/02118 , C25D7/123 , C25D13/18 , H01L21/02282 , H01L21/288 , H01L21/312 , H01L21/76843 , H01L21/76898 , H01L2924/0002 , H01L2924/00
摘要： The present invention essentially relates to a method of preparing an electrically insulating film at the surface of an electrical conductor or semiconductor substrate, such as a silicon substrate.According to the invention, this method comprises: a) bringing said surface into contact with a liquid solution comprising: a protic solvent; at least one diazonium salt; at least one monomer that is chain-polymerizable and soluble in said protic solvent; at least one acid in a sufficient quantity to stabilize said diazonium salt by adjusting the pH of said solution to a value less than 7, preferably less than 2.5; b) the polarization of said surface according to a potentio- or galvano-pulsed mode for a duration sufficient to form a film having a thickness of at least 60 nanometers, and preferably between 80 and 500 nanometers. Application: Metallization of through-vias, especially of 3D integrated circuits.
摘要翻译：本发明基本上涉及在诸如硅衬底的电导体或半导体衬底的表面上制备电绝缘膜的方法。根据本发明，该方法包括：a）使所述表面与包含质子溶剂的液体溶液接触; 至少一种重氮盐; 至少一种可聚合并可溶于所述质子溶剂的单体; 至少一种足够量的酸以通过将所述溶液的pH调节至小于7，优选小于2.5的值来稳定所述重氮盐; b）根据电位或电流脉冲模式的所述表面的极化持续足够长的时间以形成厚度为至少60纳米，优选为80至500纳米的膜。应用：通孔的金属化，特别是3D集成电路的金属化。

7. 发明申请

US20110192462A1 SOLAR CELLS 审中-公开
标题翻译：太阳能电池
公开(公告)号：US20110192462A1
公开(公告)日：2011-08-11
申请号：US12983094
申请日：2010-12-31
申请人： Claudio Truzzi , Steve Lerner
发明人： Claudio Truzzi , Steve Lerner
IPC分类号： H01L31/02 , H01L31/0264 , H01L31/18
CPC分类号： H01L31/03921 , H01L31/022491 , H01L31/0465 , Y02E10/50
摘要： A solar cell is provided herein. The solar cell includes a substantially transparent substrate, a substantially thin and transparent nickel-based conformal layer deposited on the substrate surface, and at least one interconnect formed on the conformal layer to facilitate energy conversion of the solar cell. The conformal layer can be made from a nickel-based material and is designed to enhance ohmic contact to the interconnect. The conformal layer can also act to facilitate the conversion of light energy into electrical current by the interconnect, while minimizing energy loss, such that the overall conversion efficiency of the solar cell can be improved. The conformal layer can further facilitate transmission of electrical current along the solar cell. A method for manufacturing a solar cell is also provided.
摘要翻译：本文提供太阳能电池。太阳能电池包括基本上透明的基板，沉积在基板表面上的基本上薄且透明的镍基共形层，以及形成在保形层上的至少一个互连，以促进太阳能电池的能量转换。共形层可以由镍基材料制成，并且被设计成增强与互连的欧姆接触。共形层还可以起到促进光能量通过互连转换为电流的作用，同时最小化能量损失，从而可以提高太阳能电池的整体转换效率。保形层可以进一步促进沿着太阳能电池的电流传输。还提供了一种太阳能电池的制造方法。

8. 发明申请

US20090183993A1 Electroplating Composition for Coating a Substrate Surface with a Metal 有权
标题翻译：用金属涂覆基材表面的电镀组合物
公开(公告)号：US20090183993A1
公开(公告)日：2009-07-23
申请号：US11992323
申请日：2006-09-20
申请人： Jérôme Daviot , José Gonzalez
发明人： Jérôme Daviot , José Gonzalez
IPC分类号： C25D5/24 , H01L21/288
CPC分类号： C25D5/54 , C25D3/38 , C25D5/34 , C25D7/123 , H01L21/2885 , H01L21/76873
摘要： The object of the present invention is an electroplating composition intended in particular for coating a copper-diffusion barrier layer in the fabrication of interconnects for integrated circuits.According to the invention, this composition comprises, in solution in a solvent: a source of copper ions, in a concentration of between 0.4 and 40 mM; at least one copper complexing agent chosen from the group comprising primary aliphatic amines, secondary aliphatic amines, tertiary aliphatic amines, aromatic amines, nitrogen heterocycles and oximes; the copper/complexing agent(s) molar ratio being between 0.1 and 2.5, preferably between 0.3 and 1.3; and the pH of the said composition being less than 7, preferably between 3.5 and 6.5. Application: microelectronics field
摘要翻译：本发明的目的是一种电镀组合物，其特别用于在制造用于集成电路的互连件中涂覆铜扩散阻挡层。根据本发明，该组合物在浓度为0.4至40mM之间的溶剂溶液中包含铜离子源; 选自伯脂族胺，仲脂族胺，叔脂族胺，芳族胺，氮杂环和肟的至少一种铜络合剂; 铜/络合剂的摩尔比在0.1和2.5之间，优选在0.3和1.3之间; 并且所述组合物的pH小于7，优选3.5至6.5。应用：微电子领域

9. 发明申请

US20080249272A1 Modification Process For Polymer Surfaces, Notably For Hydroxylation Of Polymer Surfaces And Products So Obtained 有权
标题翻译：聚合物表面的改性方法，显着地用于获得的聚合物表面和产物的羟基化
公开(公告)号：US20080249272A1
公开(公告)日：2008-10-09
申请号：US12089960
申请日：2006-10-10
申请人： Christophe Bureau , Jean Pinson
发明人： Christophe Bureau , Jean Pinson
IPC分类号： C08F20/06
CPC分类号： C08F8/00 , A61L29/04 , C08F8/18 , C08J7/12 , C08J2323/06 , C08J2323/12 , C08J2355/02 , C08F110/06 , C08F110/02 , C08F257/02
摘要： The present invention concerns the use of RO. radicals, R being a hydrogen, an alkyl group having 2 to 15 carbons, an acyl group —COR′ in which R′ represents an alkyl group having 2 to 15 carbons, or an aroyl group —COAr in which Ar represents an aromatic group having 6 to 15 carbons, for the hydroxylation, alkoxylation or oxycarbonylation of polymer surfaces, the said polymers being different from polymers chosen from: polymethylmethacrylate (PMMA) and fluorocarbon polymers when R represents a hydrogen, or of polymer mixture surfaces, notably hydrophobic ones, the said polymers consisting in monomeric units of which at least 50% among these are aliphatic units, and the said RO. radicals being generated by electrochemical or photochemical means.
摘要翻译：本发明涉及RO的用途。基团，R为氢，碳原子数2〜15的烷基，酰基-COR'，其中R'表示碳原子数2〜15的烷基，或芳基-COAr，Ar表示芳基，对于聚合物表面的羟基化，烷氧基化或氧羰基化，所述聚合物不同于聚合甲基丙烯酸甲酯（PMMA）和氟碳聚合物，当R表示氢时，或聚合物混合物表面，特别是疏水性聚合物，所述聚合物由其中至少50％为脂族单元的单体单元和所述RO组成。自由基是通过电化学或光化学方法产生的。

10. 发明申请

US20070262449A1 Coating method and solutions for enhanced electromigration resistance 有权
标题翻译：涂层方法和增强电迁移性的解决方案
公开(公告)号：US20070262449A1
公开(公告)日：2007-11-15
申请号：US11714435
申请日：2007-03-05
申请人： Isabelle Bispo , Nathalie Thieriet , Paolo Mangiagalli
发明人： Isabelle Bispo , Nathalie Thieriet , Paolo Mangiagalli
IPC分类号： H01L23/532 , C07C245/20 , H01L21/31
CPC分类号： H01L21/76834 , H01L21/76832
摘要： The present invention concerns a methods and compositions for preparing a multi layer composite device, such as a semiconductor device. Said method comprises (A) forming a dielectric layer on the surface of a composite material by bringing said surface into contact: a) either with a solution, comprising the diazonium salt of aniline, a diazonium salt bearing at least one functional group or an amine compound of formula H2N-A-X-Z as defined in claim 1: b) or with a first solution containing an aryl diazonium salt and successively a second solution containing a compound bearing at least one functional group and bearing at least one functional group capable of reacting with the aryl radical grafted on the surface of the composite material thanks to the aryl diazonium salt; (B) forming an overlayer on said surface of said composite material obtained in step (A), said overlayer consisting of a Si-containing dielectric Cu-Etch Stop Layer and/or copper diffusion barrier.
摘要翻译：本发明涉及用于制备诸如半导体器件的多层复合器件的方法和组合物。所述方法包括（A）通过使所述表面接触，在复合材料的表面上形成电介质层：a）用包含苯胺的重氮盐，含有至少一个官能团的重氮盐或胺的溶液 b）或使用含有芳基重氮盐的第一溶液，以及依次含有含有至少一个官能团并具有至少一个官能团的化合物的第二溶液的式H 2 N NAZZ的化合物由于芳基重氮盐，能够与接枝在复合材料表面上的芳基反应的官能团; （B）在步骤（A）中获得的所述复合材料的所述表面上形成覆盖层，所述覆盖层由含Si的介电Cu蚀刻停止层和/或铜扩散阻挡层组成。

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