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1. 发明申请

US20110304423A1 Method of using a buffered electric pulse induced resistance device 有权
标题翻译：使用缓冲电脉冲感应电阻器件的方法
公开(公告)号：US20110304423A1
公开(公告)日：2011-12-15
申请号：US13068884
申请日：2011-05-23
申请人： Naijuan Wu , Xin Chen , Alex Ignatiev
发明人： Naijuan Wu , Xin Chen , Alex Ignatiev
IPC分类号： H01C1/012
CPC分类号： H01C7/006 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/0092 , G11C2213/31 , G11C2213/51 , H01C17/06533 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The selected duration of the electrical pulse is in the range of from about 8 nanosecond to about 100 milliseconds. The selected maximum value of the electrical pulse is in the range of from about 1 V to about 150 V. The electrical pulse may have square, saw-toothed, triangular, sine, oscillating or other waveforms, and may be of positive or negative polarity.
摘要翻译：可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。在施加的电脉冲下在器件中产生可逆电阻变化。器件的电阻变化在施加电脉冲后保持不变。所选择的电脉冲持续时间在约8纳秒至约100毫秒的范围内。所选择的电脉冲的最大值在约1V至约150V的范围内。电脉冲可以具有正方形，锯齿形，三角形，正弦，振荡或其它波形，并且可以是正极性或负极性。

2. 发明申请

US20060210706A1 Thin film solid oxide fuel cell with lithographically patterned electrolyte and anode layers 有权
公开(公告)号：US20060210706A1
公开(公告)日：2006-09-21
申请号：US11436392
申请日：2006-05-18
申请人： Xin Chen , Naijuan Wu , Alex Ignatiev , Yuxiang Zhou
发明人： Xin Chen , Naijuan Wu , Alex Ignatiev , Yuxiang Zhou
IPC分类号： B05D5/12 , H01M4/88
CPC分类号： H01M8/124 , H01M4/8621 , H01M4/881 , H01M4/8814 , H01M4/8817 , H01M4/8867 , H01M4/8871 , H01M8/002 , H01M8/126 , H01M2300/0094 , Y02E60/525 , Y02P70/56
摘要： A thin film solid oxide fuel cell (TFSOFC) having a porous metallic anode and a porous cathode is provided. The fuel cell is formed by using a continuous metal foil as a substrate onto which is deposited a thin anode metal layer which is then patterned to reveal an array of pores in the anode. A dense thin film electrolyte is then deposited onto the porous anode layer overcoating the anode and filling the anode pores. The substrate foil layer is then removed to allow for exposure of the porous anode/electrolyte to fuel. The cathode is then formed on the electrolyte by depositing a cathode thin film cap using known film deposition techniques. Further processing may be used to increase the porosity of the electrodes. The metal foil may be treated to have an atomically ordered surface, which makes possible an atomically ordered anode and atomically ordered thin film electrolyte for improved performance.

3. 发明申请

US20050170972A1 Method of manufacturing Fe-sheathed MgB2 wires and solenoids 有权
标题翻译：制造铁皮MgB2导线和螺线管的方法
公开(公告)号：US20050170972A1
公开(公告)日：2005-08-04
申请号：US11050186
申请日：2005-02-03
申请人： Kamel Salama , Hui Fang
发明人： Kamel Salama , Hui Fang
IPC分类号： H01B1/00 , H01F41/04 , H01L39/24
CPC分类号： H01L39/2487 , H01F41/048 , Y10S505/704 , Y10T29/49014
摘要： A method of manufacturing a Fe-sheathed MgB2 wire includes the steps of: I. Selecting a carbon steel tube with 0.1% to 0.3% carbon; a. Crimping a first end of the tube; b. Selecting a Mg powder at least 99.8% pure, and sized for 325 mesh; c. Selecting a B powder, at least 99.99% pure, and sized for 325 mesh; d. Stoichiometrically mixing the Mg and B powders to form a mixture powder; e. Milling the mixture powder by using high-energy ball mill for 0.5 to 6 hours and using stainless steel mixing balls and vial, wherein the mass ratio of ball to powder is 20:1, to form a milled powder; f. Filling and packing the tube in an argon atmosphere with the milled powder to create a packing density of about 1.5 g/cm3; g. Crimping the second end of the tube to create a powder-filled tube; h. Rolling the powder-filled tube to create the Fe-sheathed MgB2 wire; and i. Annealing the as-rolled wire at 600 to 900° C. for 0.5 to 3 hours at high purity argon environment to create superconducting wire.
摘要翻译：一种制造Fe-ZnP 2线材的方法包括以下步骤：I.选择具有0.1％至0.3％碳的碳钢管; 一个。压缩管的第一端; b。选择纯度至少99.8％的Mg粉末，尺寸为325目; C。选择B粉，纯度至少99.99％，尺寸为325目; d。将Mg和B粉末化学搅拌混合形成混合粉末; e。使用高能球磨机研磨混合粉末0.5〜6小时，使用不锈钢混合球和小瓶，其中球与粉的质量比为20:1，形成研磨粉末; F。在氩气氛下用研磨的粉末填充和包装管以产生约1.5g / cm 3的填充密度; G。将管子的第二端压平，形成粉末填充管; H。滚动粉末填充的管以形成Fe包覆的MgB 线; 和我。在高纯氩气环境下，将600〜900℃的退火线退火0.5〜3小时，制作超导线。

4. 发明授权

US07875162B2 Monitored separation device 有权
标题翻译：监测分离装置
公开(公告)号：US07875162B2
公开(公告)日：2011-01-25
申请号：US11091605
申请日：2005-03-28
申请人： George William Jackson , Richard Coale Willson , George Edward Fox
发明人： George William Jackson , Richard Coale Willson , George Edward Fox
IPC分类号： G01N27/447
CPC分类号： C12N15/1003 , B01D57/02 , G01N27/44721
摘要： A device for separating and purifying useful quantities of particles comprises: a. an anolyte reservoir connected to an anode, the anolyte reservoir containing an electrophoresis buffer; b. a catholyte reservoir connected to a cathode, the catholyte reservoir also containing the electrophoresis buffer; c. a power supply connected to the anode and to the cathode; d. a column having a first end inserted into the anolyte reservoir, a second end inserted into the catholyte reservoir, and containing a separation medium; e. a light source; f. a first optical fiber having a first fiber end inserted into the separation medium, and having a second fiber end connected to the light source; g. a photo detector; h. a second optical fiber having a third fiber end inserted into the separation medium, and having a fourth fiber end connected to the photo detector; and i. an ion-exchange membrane in the anolyte reservoir.
摘要翻译：用于分离和净化有用量的颗粒的装置包括：a。连接到阳极的阳极电解液储存器，含有电泳缓冲液的阳极电解液储存器; b。连接阴极的阴极电解液储存器，阴极电解液储存器还含有电泳缓冲液; C。连接到阳极和阴极的电源; d。柱，其具有插入所述阳极电解液容器的第一端，插入所述阴极电解液容器中的第二端，并且包含分离介质; e。光源; F。第一光纤，其具有插入到所述分离介质中的第一光纤端，并且具有连接到所述光源的第二光纤端; G。光电检测器 H。第二光纤，其具有插入到所述分离介质中的第三光纤端，并且具有连接到所述光检测器的第四光纤端; 和我。阳极电解液容器中的离子交换膜。

5. 发明申请

US20100014344A1 Switchable two terminal multi-layer perovskite thin film resistive device and methods thereof 有权
标题翻译：可切换双端子多层钙钛矿薄膜电阻器件及其方法
公开(公告)号：US20100014344A1
公开(公告)日：2010-01-21
申请号：US12586147
申请日：2009-09-17
申请人： Naijuan Wu , Xin Chen , Alex Ignatiev
发明人： Naijuan Wu , Xin Chen , Alex Ignatiev
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： G11C13/0007 , G11C2213/31 , H01C7/006 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.
摘要翻译：可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。在施加的电脉冲下在器件中产生可逆电阻变化。器件的电阻变化在施加电脉冲后保持不变。添加到器件中的缓冲层的功能包括电阻切换区域的放大率，切换器件所需的脉冲电压的降低，器件受到大脉冲冲击的损害，温度的改善以及辐射性能和增加的设备的稳定性，允许多值存储器应用。

6. 发明授权

US09349947B2 Methods of using a two terminal multi-layer thin film resistance switching device with a diffusion barrier 有权
标题翻译：使用具有扩散阻挡层的双端子多层薄膜电阻开关器件的方法
公开(公告)号：US09349947B2
公开(公告)日：2016-05-24
申请号：US14939058
申请日：2015-11-12
申请人： Board of Regents, University of Houston
发明人： Alex Ignatiev , Kristina Young-Fisher , Rabi Ebrahim , Naijuan Wu
IPC分类号： H01L21/00 , H01L21/02 , H01L45/00 , G11C13/00 , H01C7/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0021 , G11C13/0069 , G11C2013/0073 , G11C2213/31 , G11C2213/51 , G11C2213/56 , H01C7/006 , H01L45/085 , H01L45/12 , H01L45/1233 , H01L45/143 , H01L45/147
摘要： An electric-pulse-induced-resistance change device (EPIR device) is provided which is a resistance switching device. It has a buffer layer inserted between a first active resistance switching layer and a second active resistance switching layer, with both active switching layers connected to electrode layers directly or through additional buffer layers between the active resistance switching layers and the electrodes. This device in its simplest form has the structure: electrode-active layer-buffer layer-active layer-electrode. The second active resistance switching layer may, in the alternative, be an ion donating layer, such that the structure becomes: electrode-active layer-buffer layer-ion donating layer-electrode. The EPIR device is constructed to mitigate the retention challenge.
摘要翻译：提供了一种电脉冲感应电阻变化装置（EPIR装置），它是电阻切换装置。它具有插入在第一有源电阻开关层和第二有源电阻开关层之间的缓冲层，两个有源开关层直接连接到电极层，或通过有源电阻切换层和电极之间的附加缓冲层连接。该装置的最简单形式具有以下结构：电极活性层 - 缓冲层 - 活性层 - 电极。作为替代，第二有源电阻开关层可以是离子供体层，使得该结构成为：电极 - 活性层 - 缓冲层 - 离子供体层 - 电极。构建EPIR设备以减轻保留挑战。

7. 发明授权

US09218901B2 Two terminal multi-layer thin film resistance switching device with a diffusion barrier and methods thereof 有权
标题翻译：具有扩散阻挡层的两端子多层薄膜电阻开关器件及其方法
公开(公告)号：US09218901B2
公开(公告)日：2015-12-22
申请号：US13373808
申请日：2011-12-01
申请人： Alex Ignatiev , Naijuan Wu , Kristina Young-Fisher , Rabi Ebrahim
发明人： Alex Ignatiev , Naijuan Wu , Kristina Young-Fisher , Rabi Ebrahim
IPC分类号： H01L21/02 , H01L21/00 , H01C7/00 , G11C13/00 , H01L45/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0021 , G11C13/0069 , G11C2013/0073 , G11C2213/31 , G11C2213/51 , G11C2213/56 , H01C7/006 , H01L45/085 , H01L45/12 , H01L45/1233 , H01L45/143 , H01L45/147
摘要： An electric-pulse-induced-resistance change device (EPIR device) is provided which is a resistance switching device. It has a buffer layer inserted between a first active resistance switching layer and a second active resistance switching layer, with both active switching layers connected to electrode layers directly or through additional buffer layers between the active resistance switching layers and the electrodes. This device in its simplest form has the structure: electrode-active layer-buffer layer-active layer-electrode. The second active resistance switching layer may, in the alternative, be an ion donating layer, such that the structure becomes: electrode-active layer-buffer layer-ion donating layer-electrode. The EPIR device is constructed to mitigate the retention challenge.
摘要翻译：提供了一种电脉冲感应电阻变化装置（EPIR装置），它是电阻切换装置。它具有插入在第一有源电阻开关层和第二有源电阻开关层之间的缓冲层，两个有源开关层直接连接到电极层，或通过有源电阻切换层和电极之间的附加缓冲层连接。该装置的最简单形式具有以下结构：电极活性层 - 缓冲层 - 活性层 - 电极。作为替代，第二有源电阻开关层可以是离子供体层，使得该结构成为：电极 - 活性层 - 缓冲层 - 离子供体层 - 电极。构建EPIR设备以减轻保留挑战。

8. 发明申请

US20120126195A1 Two terminal multi-layer thin film resistance switching device with a diffusion barrier and methods thereof 有权
标题翻译：具有扩散阻挡层的两端子多层薄膜电阻开关器件及其方法
公开(公告)号：US20120126195A1
公开(公告)日：2012-05-24
申请号：US13373808
申请日：2011-12-01
申请人： Alex Ignatiev , Naijuan Wu , Kristina Young-Fisher , Rabi Ebrahim
发明人： Alex Ignatiev , Naijuan Wu , Kristina Young-Fisher , Rabi Ebrahim
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0021 , G11C13/0069 , G11C2013/0073 , G11C2213/31 , G11C2213/51 , G11C2213/56 , H01C7/006 , H01L45/085 , H01L45/12 , H01L45/1233 , H01L45/143 , H01L45/147
摘要： An electric-pulse-induced-resistance change device (EPIR device) is provided which is a resistance switching device. It has a buffer layer inserted between a first active resistance switching layer and a second active resistance switching layer, with both active switching layers connected to electrode layers directly or through additional buffer layers between the active resistance switching layers and the electrodes. This device in its simplest form has the structure: electrode-active layer-buffer layer-active layer-electrode. The second active resistance switching layer may, in the alternative, be an ion donating layer, such that the structure becomes: electrode-active layer-buffer layer-ion donating layer-electrode. The EPIR device is constructed to mitigate the retention challenge.
摘要翻译：提供了一种电脉冲感应电阻变化装置（EPIR装置），它是电阻切换装置。它具有插入在第一有源电阻开关层和第二有源电阻开关层之间的缓冲层，两个有源开关层直接连接到电极层，或通过有源电阻切换层和电极之间的附加缓冲层连接。该装置的最简单形式具有以下结构：电极活性层 - 缓冲层 - 活性层 - 电极。作为替代，第二有源电阻开关层可以是离子供体层，使得该结构成为：电极 - 活性层 - 缓冲层 - 离子供体层 - 电极。构建EPIR设备以减轻保留挑战。

9. 发明授权

US08089111B2 Switchable two terminal multi-layer perovskite thin film resistive device and methods thereof 有权
标题翻译：可切换双端子多层钙钛矿薄膜电阻器件及其方法
公开(公告)号：US08089111B2
公开(公告)日：2012-01-03
申请号：US12586147
申请日：2009-09-17
申请人： Naijuan Wu , Xin Chen , Alex Ignatiev
发明人： Naijuan Wu , Xin Chen , Alex Ignatiev
IPC分类号： H01L29/76 , H01L21/00
CPC分类号： G11C13/0007 , G11C2213/31 , H01C7/006 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.
摘要翻译：可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。在施加的电脉冲下在器件中产生可逆电阻变化。器件的电阻变化在施加电脉冲后保持不变。添加到器件中的缓冲层的功能包括电阻切换区域的放大率，切换器件所需的脉冲电压的降低，器件受到大脉冲冲击的损害，温度的改善以及辐射性能和增加的设备的稳定性，允许多值存储器应用。

10. 发明授权

US07510819B2 Thin film solid oxide fuel cell with lithographically patterned electrolyte and anode layers 有权
标题翻译：具有光刻图案的电解质和阳极层的薄膜固体氧化物燃料电池
公开(公告)号：US07510819B2
公开(公告)日：2009-03-31
申请号：US11436392
申请日：2006-05-18
申请人： Xin Chen , Naijuan Wu , Alex Ignatiev , Yuxiang Zhou
发明人： Xin Chen , Naijuan Wu , Alex Ignatiev , Yuxiang Zhou
IPC分类号： B05D5/12 , H01M4/88
CPC分类号： H01M8/124 , H01M4/8621 , H01M4/881 , H01M4/8814 , H01M4/8817 , H01M4/8867 , H01M4/8871 , H01M8/002 , H01M8/126 , H01M2300/0094 , Y02E60/525 , Y02P70/56
摘要： A thin film solid oxide fuel cell (TFSOFC) having a porous metallic anode and a porous cathode is provided. The fuel cell is formed by using a continuous metal foil as a substrate onto which is deposited a thin anode metal layer which is then patterned to reveal an array of pores in the anode. A dense thin film electrolyte is then deposited onto the porous anode layer overcoating the anode and filling the anode pores. The substrate foil layer is then removed to allow for exposure of the porous anode/electrolyte to fuel. The cathode is then formed on the electrolyte by depositing a cathode thin film cap using known film deposition techniques. Further processing may be used to increase the porosity of the electrodes. The metal foil may be treated to have an atomically ordered surface, which makes possible an atomically ordered anode and atomically ordered thin film electrolyte for improved performance.
摘要翻译：提供具有多孔金属阳极和多孔阴极的薄膜固体氧化物燃料电池（TFSOFC）。燃料电池通过使用连续金属箔作为衬底形成，在衬底上沉积薄阳极金属层，然后将其构图以显示阳极中的孔阵列。然后将致密的薄膜电解质沉积到多孔阳极层上，覆盖阳极并填充阳极孔。然后去除衬底箔层以允许多孔阳极/电解质暴露于燃料。然后通过使用已知的膜沉积技术沉积阴极薄膜帽在阴极上形成阴极。可以使用进一步的处理来增加电极的孔隙率。金属箔可以被处理成具有原子序列的表面，这使得可能的原子有序的阳极和原子排列的薄膜电解质用于改善性能。

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