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1. 发明申请

US20100014344A1 Switchable two terminal multi-layer perovskite thin film resistive device and methods thereof 有权
标题翻译：可切换双端子多层钙钛矿薄膜电阻器件及其方法
公开(公告)号：US20100014344A1
公开(公告)日：2010-01-21
申请号：US12586147
申请日：2009-09-17
申请人： Naijuan Wu , Xin Chen , Alex Ignatiev
发明人： Naijuan Wu , Xin Chen , Alex Ignatiev
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： G11C13/0007 , G11C2213/31 , H01C7/006 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.
摘要翻译：可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。在施加的电脉冲下在器件中产生可逆电阻变化。器件的电阻变化在施加电脉冲后保持不变。添加到器件中的缓冲层的功能包括电阻切换区域的放大率，切换器件所需的脉冲电压的降低，器件受到大脉冲冲击的损害，温度的改善以及辐射性能和增加的设备的稳定性，允许多值存储器应用。

2. 发明授权

US08409879B2 Method of using a buffered electric pulse induced resistance device 有权
标题翻译：使用缓冲电脉冲感应电阻器件的方法
公开(公告)号：US08409879B2
公开(公告)日：2013-04-02
申请号：US13068884
申请日：2011-05-23
申请人： Naijuan Wu , Xin Chen , Alex Ignatiev
发明人： Naijuan Wu , Xin Chen , Alex Ignatiev
IPC分类号： H01L21/00 , H01L21/02
CPC分类号： H01C7/006 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/0092 , G11C2213/31 , G11C2213/51 , H01C17/06533 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The selected duration of the electrical pulse is in the range of from about 8 nanosecond to about 100 milliseconds. The selected maximum value of the electrical pulse is in the range of from about 1 V to about 150 V. The electrical pulse may have square, saw-toothed, triangular, sine, oscillating or other waveforms, and may be of positive or negative polarity.
摘要翻译：可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。在施加的电脉冲下在器件中产生可逆电阻变化。器件的电阻变化在施加电脉冲后保持不变。所选择的电脉冲持续时间在约8纳秒至约100毫秒的范围内。所选择的电脉冲的最大值在约1V至约150V的范围内。电脉冲可以具有正方形，锯齿形，三角形，正弦，振荡或其它波形，并且可以是正极性或负极性。

3. 发明授权

US07955871B2 Method of using a switchable resistive perovskite microelectronic device with multi-layer thin film structure 有权
标题翻译：使用具有多层薄膜结构的可切换电阻钙钛矿微电子器件的方法
公开(公告)号：US07955871B2
公开(公告)日：2011-06-07
申请号：US12586143
申请日：2009-09-17
申请人： Naijuan Wu , Xin Chen , Alex Ignatiev
发明人： Naijuan Wu , Xin Chen , Alex Ignatiev
IPC分类号： H01L21/00 , H01L29/76
CPC分类号： G11C13/0007 , G11C2213/31 , H01C7/006 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.
摘要翻译：可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。在施加的电脉冲下在器件中产生可逆电阻变化。器件的电阻变化在施加电脉冲后保持不变。添加到器件中的缓冲层的功能包括电阻切换区域的放大率，切换器件所需的脉冲电压的降低，器件受到大脉冲冲击的损害，温度的改善以及辐射性能和增加的设备的稳定性，允许多值存储器应用。

4. 发明申请

US20100134239A1 Method of using a switchable resistive perovskite microelectronic device with multi-Layer thin film structure 有权
标题翻译：使用具有多层薄膜结构的可切换电阻钙钛矿微电子器件的方法
公开(公告)号：US20100134239A1
公开(公告)日：2010-06-03
申请号：US12586143
申请日：2009-09-17
申请人： Naijuan Wu , Xin Chen , Alex Ignatiev
发明人： Naijuan Wu , Xin Chen , Alex Ignatiev
IPC分类号： H01C1/012
CPC分类号： G11C13/0007 , G11C2213/31 , H01C7/006 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.
摘要翻译：可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。在施加的电脉冲下在器件中产生可逆电阻变化。器件的电阻变化在施加电脉冲后保持不变。添加到器件中的缓冲层的功能包括电阻切换区域的放大率，切换器件所需的脉冲电压的降低，器件受到大脉冲冲击的损害，温度的改善以及辐射性能和增加的设备的稳定性，允许多值存储器应用。

5. 发明授权

US07608467B2 Switchable resistive perovskite microelectronic device with multi-layer thin film structure 有权
标题翻译：具有多层薄膜结构的可切换电阻钙钛矿微电子器件
公开(公告)号：US07608467B2
公开(公告)日：2009-10-27
申请号：US11034695
申请日：2005-01-13
申请人： Naijuan Wu , Xin Chen , Alex Ignatiev
发明人： Naijuan Wu , Xin Chen , Alex Ignatiev
IPC分类号： H01L21/00 , H01L29/76
CPC分类号： G11C13/0007 , G11C2213/31 , H01C7/006 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.
摘要翻译：可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。在施加的电脉冲下在器件中产生可逆电阻变化。器件的电阻变化在施加电脉冲后保持不变。添加到器件中的缓冲层的功能包括电阻切换区域的放大率，切换器件所需的脉冲电压的降低，器件受到大脉冲冲击的损害，温度的改善以及辐射性能和增加的设备的稳定性，允许多值存储器应用。

6. 发明申请

US20110304423A1 Method of using a buffered electric pulse induced resistance device 有权
标题翻译：使用缓冲电脉冲感应电阻器件的方法
公开(公告)号：US20110304423A1
公开(公告)日：2011-12-15
申请号：US13068884
申请日：2011-05-23
申请人： Naijuan Wu , Xin Chen , Alex Ignatiev
发明人： Naijuan Wu , Xin Chen , Alex Ignatiev
IPC分类号： H01C1/012
CPC分类号： H01C7/006 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/0092 , G11C2213/31 , G11C2213/51 , H01C17/06533 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The selected duration of the electrical pulse is in the range of from about 8 nanosecond to about 100 milliseconds. The selected maximum value of the electrical pulse is in the range of from about 1 V to about 150 V. The electrical pulse may have square, saw-toothed, triangular, sine, oscillating or other waveforms, and may be of positive or negative polarity.
摘要翻译：可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。在施加的电脉冲下在器件中产生可逆电阻变化。器件的电阻变化在施加电脉冲后保持不变。所选择的电脉冲持续时间在约8纳秒至约100毫秒的范围内。所选择的电脉冲的最大值在约1V至约150V的范围内。电脉冲可以具有正方形，锯齿形，三角形，正弦，振荡或其它波形，并且可以是正极性或负极性。

7. 发明申请

US20060210706A1 Thin film solid oxide fuel cell with lithographically patterned electrolyte and anode layers 有权
公开(公告)号：US20060210706A1
公开(公告)日：2006-09-21
申请号：US11436392
申请日：2006-05-18
申请人： Xin Chen , Naijuan Wu , Alex Ignatiev , Yuxiang Zhou
发明人： Xin Chen , Naijuan Wu , Alex Ignatiev , Yuxiang Zhou
IPC分类号： B05D5/12 , H01M4/88
CPC分类号： H01M8/124 , H01M4/8621 , H01M4/881 , H01M4/8814 , H01M4/8817 , H01M4/8867 , H01M4/8871 , H01M8/002 , H01M8/126 , H01M2300/0094 , Y02E60/525 , Y02P70/56
摘要： A thin film solid oxide fuel cell (TFSOFC) having a porous metallic anode and a porous cathode is provided. The fuel cell is formed by using a continuous metal foil as a substrate onto which is deposited a thin anode metal layer which is then patterned to reveal an array of pores in the anode. A dense thin film electrolyte is then deposited onto the porous anode layer overcoating the anode and filling the anode pores. The substrate foil layer is then removed to allow for exposure of the porous anode/electrolyte to fuel. The cathode is then formed on the electrolyte by depositing a cathode thin film cap using known film deposition techniques. Further processing may be used to increase the porosity of the electrodes. The metal foil may be treated to have an atomically ordered surface, which makes possible an atomically ordered anode and atomically ordered thin film electrolyte for improved performance.

8. 发明申请

US20050151156A1 Switchable resistive perovskite microelectronic device with multi-layer thin film structure 有权
标题翻译：具有多层薄膜结构的可切换电阻钙钛矿微电子器件
公开(公告)号：US20050151156A1
公开(公告)日：2005-07-14
申请号：US11034695
申请日：2005-01-13
申请人： Naijuan Wu , Xin Chen , Alex Ignatiev
发明人： Naijuan Wu , Xin Chen , Alex Ignatiev
IPC分类号： H01C7/00 , H01L45/00 , H01L21/00 , H01L29/00 , H01L29/32 , H01L31/111
CPC分类号： G11C13/0007 , G11C2213/31 , H01C7/006 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.
摘要翻译：可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。在施加的电脉冲下在器件中产生可逆电阻变化。器件的电阻变化在施加电脉冲后保持不变。添加到器件中的缓冲层的功能包括电阻切换区域的放大率，切换器件所需的脉冲电压的降低，器件受到大脉冲冲击的损害，温度的改善以及辐射性能和增加的设备的稳定性，允许多值存储器应用。

9. 发明授权

US06645656B1 Thin film solid oxide fuel cell and method for forming 有权
标题翻译：薄膜固体氧化物燃料电池及其成型方法
公开(公告)号：US06645656B1
公开(公告)日：2003-11-11
申请号：US09534385
申请日：2000-03-24
申请人： Xin Chen , Naijuan Wu , Alex Ignatiev
发明人： Xin Chen , Naijuan Wu , Alex Ignatiev
IPC分类号： H01M810
CPC分类号： H01M8/1286 , H01M8/1253 , H01M2008/1293 , Y02E60/525 , Y02P70/56
摘要： A thin film solid oxide fuel cell (TFSOFC) having a porous metallic anode and a porous cathode is provided. The fuel cell is formed by using a continuous metal foil as a substrate to epitaxially deposit a thin film electrolyte on one surface of the foil. The metal foil may then be made porous by photolithographically patterning and etching the other surface of the foil to form holes extending through the foil to the electrolyte/foil interface. The cathode is then formed on the electrolyte by depositing a second thin film using known film deposition techniques. Further processing may be used to increase the porosity of the electrodes. The metal foil may be treated before film deposition to have an atomically ordered surface, which makes possible an atomically ordered thin film electrolyte.
摘要翻译：提供具有多孔金属阳极和多孔阴极的薄膜固体氧化物燃料电池（TFSOFC）。燃料电池通过使用连续金属箔作为基板来形成，以在箔的一个表面上外延地沉积薄膜电解质。然后可以通过光刻图案化和蚀刻箔的另一表面来形成金属箔以形成延伸穿过箔到达电解质/箔界面的孔。然后通过使用已知的膜沉积技术沉积第二薄膜在阴极上形成阴极。可以使用进一步的处理来增加电极的孔隙率。金属箔可以在膜沉积之前进行处理以具有原子序列表面，这使得有可能成为原子排列的薄膜电解质。

10. 发明授权

US08089111B2 Switchable two terminal multi-layer perovskite thin film resistive device and methods thereof 有权
标题翻译：可切换双端子多层钙钛矿薄膜电阻器件及其方法
公开(公告)号：US08089111B2
公开(公告)日：2012-01-03
申请号：US12586147
申请日：2009-09-17
申请人： Naijuan Wu , Xin Chen , Alex Ignatiev
发明人： Naijuan Wu , Xin Chen , Alex Ignatiev
IPC分类号： H01L29/76 , H01L21/00
CPC分类号： G11C13/0007 , G11C2213/31 , H01C7/006 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.
摘要翻译：可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。在施加的电脉冲下在器件中产生可逆电阻变化。器件的电阻变化在施加电脉冲后保持不变。添加到器件中的缓冲层的功能包括电阻切换区域的放大率，切换器件所需的脉冲电压的降低，器件受到大脉冲冲击的损害，温度的改善以及辐射性能和增加的设备的稳定性，允许多值存储器应用。

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