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1. 发明授权

US10978215B2 Series and/or parallel connected alpha, beta, and gamma voltaic cell devices 有权
公开(公告)号：US10978215B2
公开(公告)日：2021-04-13
申请号：US15602078
申请日：2017-05-22
申请人： City Labs, Inc.
发明人： Peter Cabauy , Larry C. Olsen , Bret J. Elkind , Jesse Grant
IPC分类号： G21H1/06 , H01L31/0304
摘要： A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.

2. 发明授权

US09647299B2 Small form factor betavoltaic battery for medical implants 有权
公开(公告)号：US09647299B2
公开(公告)日：2017-05-09
申请号：US14304687
申请日：2014-06-13
申请人： Peter Cabauy
发明人： Peter Cabauy
IPC分类号： H01M10/46 , G21H1/06 , H01M10/052 , A61N1/378 , H01M10/0562
CPC分类号： H01M10/46 , A61N1/378 , G21H1/06 , H01M10/052 , H01M10/0562 , H01M2220/30
摘要： A betavoltaic power source. The power source comprises a source of beta particles, one or more regions for collecting the beta particles and for generating electron hole pairs responsive thereto, and a secondary power source charged by a current developed by the electron hole pairs.

3. 发明申请

US20170092385A1 Tritium Direct Conversion Semiconductor Device 有权
公开(公告)号：US20170092385A1
公开(公告)日：2017-03-30
申请号：US15286567
申请日：2016-10-06
申请人： City Labs, Inc.
发明人： Peter Cabauy , Larry C. Olsen , Noren Pan
IPC分类号： G21H1/06 , H01L31/115
CPC分类号： G21H1/06 , H01L31/115
摘要： A device for producing electricity. The device comprises an indium gallium phosphide semiconductor material comprising a plurality of indium gallium phosphide material layers each layer having different dopant concentrations and doped with either n-type dopants or p-type dopants, a first terminal on a first surface of the semiconductor material, a beta particle source proximate the first surface for emitting beta particles that penetrate into the semiconductor material, and a second terminal on a second surface of the semiconductor material; the semiconductor material for producing current between the first and second terminals responsive to the beta particles penetrating into the semiconductor material.

4. 发明授权

US09019363B2 Microscope stability using a single optical path and image detector 有权
标题翻译：使用单个光路和图像检测器显微镜稳定性
公开(公告)号：US09019363B2
公开(公告)日：2015-04-28
申请号：US13556996
申请日：2012-07-24
申请人： James F. MacKay , William O'Brien , Eric A. Drier
发明人： James F. MacKay , William O'Brien , Eric A. Drier
IPC分类号： H04N7/18 , G02B21/36 , G02B21/26 , G02B21/16 , G02B27/58
CPC分类号： G02B21/367 , G02B21/16 , G02B21/26 , G02B21/365 , G02B27/58
摘要： Stabilization, via active-feedback positional drift-correction, of an optical microscope imaging system in up to 3-dimensions is achieved using the optical measurement path of an image sensor. Nanometer-scale stability of the imaging system is accomplished by correcting for positional drift using fiduciary references sparsely distributed within or in proximity to the experimental sample.
摘要翻译：使用图像传感器的光学测量路径实现光学显微镜成像系统的高达3维的经由主动反馈位置漂移校正的稳定化。成像系统的纳米级稳定性通过使用稀疏分布在实验样品内或附近的受信参考来校正位置漂移来实现。

5. 发明授权

US08634201B1 Radioisotope power source package for microelectronics 有权
标题翻译：用于微电子的放射性同位素电源封装
公开(公告)号：US08634201B1
公开(公告)日：2014-01-21
申请号：US12958371
申请日：2010-12-01
申请人： Peter Cabauy , Bret J. Elkind , Denset Serralta , Jesse Grant
发明人： Peter Cabauy , Bret J. Elkind , Denset Serralta , Jesse Grant
IPC分类号： H05K1/16
CPC分类号： H01L23/50 , G21H1/00 , H01L2924/0002 , H05K1/181 , H05K1/186 , H05K3/4602 , H05K2201/10037 , H05K2201/10378 , Y02P70/611 , H01L2924/00
摘要： An assembly carrying a radioisotope power source for attaching to a printed circuit board. The assembly comprises an integrated circuit package carrying an integrated circuit, the integrated circuit package having first contacts on a lower surface thereof, the integrated circuit requiring connection to a power source, a power source package defining a cavity therein for carrying the radioisotope power source, the power source package having second contacts on an upper surface thereof contacting the first contacts and having third contacts on a lower surface thereof for contacting fourth contacts on the printed circuit board, the power source package having conductive vias extending from the second contacts on the upper surface of the power source package to the third contacts on the lower surface of the power source package, one or more of the vias having a fan-in segment, a fan-out segment and a substantially vertical segment therebetween, and electrical signals passing between the integrated circuit and the printed circuit board through the conductive vias and power passing from the radioisotope power source into the integrated circuit through one or more of the substantially vertical segments and the fan out segments.
摘要翻译：一种携带用于附着到印刷电路板的放射性同位素电源的组件。该组件包括承载集成电路的集成电路封装，集成电路封装在其下表面上具有第一触点，该集成电路需要连接到电源，在其中限定其中用于承载放射性同位素电源的空腔的电源封装，所述电源封装在其上表面上具有接触所述第一触点的第二触点，并且在其下表面上具有用于接触所述印刷电路板上的第四触点的第三触点，所述电源封装具有从所述第二触点上延伸的导电通孔电源封装的表面到电源封装的下表面上的第三触点，一个或多个通孔具有扇形段，扇出段和其间的基本垂直的段，以及电信号之间的电信号集成电路和印刷电路板通过导电通孔和电源通孔 g从放射性同位素电源通过一个或多个基本上垂直的部分和扇出部分进入集成电路。

6. 发明申请

US20150001988A1 TRITIUM DIRECT CONVERSION SEMICONDUCTOR DEVICE HAVING INCREASED ACTIVE AREA 有权
标题翻译：具有增加活动区域的TRITIUM直接转换半导体器件
公开(公告)号：US20150001988A1
公开(公告)日：2015-01-01
申请号：US14313953
申请日：2014-06-24
申请人： PETER CABAUY
发明人： PETER CABAUY
IPC分类号： G21H1/06 , H01L31/18
CPC分类号： G21H1/06
摘要： A betavoltaic power source. The betavoltaic power source comprises a source of beta particles, a substrate with shaped features defined therein and a InGaP betavoltaic junction disposed between the source of beta particles and the substrate, and also having shaped features therein responsive to the shaped features in the substrate, the InGaP betavoltaic junction device for collecting the beta particles and for generating electron hole pairs responsive thereto.
摘要翻译：一个betavoltaic电源。紫外线电源包括β粒子源，其中限定有成形特征的基底和设置在β粒子源和基底之间的InGaP贝塔联结，并且还具有响应于基底中的成形特征的成形特征，用于收集β粒子并产生响应于其的电子空穴对的InGaP贝塔结合装置。

7. 发明申请

US20230091756A1 SERIES AND/OR PARALLEL CONNECTED ALPHA, BETA, AND GAMMA VOLTAIC CELL DEVICES 有权
公开(公告)号：US20230091756A1
公开(公告)日：2023-03-23
申请号：US17937575
申请日：2022-10-03
申请人： CITY LABS, INC.
发明人： PETER CABAUY , LARRY OLSEN , BRET J. ELKIND , JESSE GRANT
IPC分类号： G21H1/06
摘要： A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.

8. 发明授权

US11462337B2 Series and/or parallel connected alpha, beta, and gamma voltaic cell devices 有权
公开(公告)号：US11462337B2
公开(公告)日：2022-10-04
申请号：US17227756
申请日：2021-04-12
申请人： CITY LABS, INC.
发明人： Peter Cabauy , Larry Olsen , Bret J. Elkind , Jesse Grant
IPC分类号： G21H1/06 , H01L31/0304
摘要： A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.

9. 发明授权

US10607744B2 Semiconductor device for directly converting radioisotope emissions into electrical power 有权
公开(公告)号：US10607744B2
公开(公告)日：2020-03-31
申请号：US16252698
申请日：2019-01-20
申请人： City Labs, Inc.
发明人： Peter Cabauy
IPC分类号： G21H1/00 , G21H1/06 , H01L31/0232 , H01L31/0304 , H01L31/18 , H01L31/115 , H01L31/0216
摘要： A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture the beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A beta particle source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material.

10. 发明授权

US09799419B2 Tritium direct conversion semiconductor device for use with gallium arsenide or germanium substrates 有权
公开(公告)号：US09799419B2
公开(公告)日：2017-10-24
申请号：US14623861
申请日：2015-02-17
申请人： City Labs, Inc.
发明人： Peter Cabauy , Larry C Olsen , Noren Pan
IPC分类号： H01L31/02 , G21H1/06
CPC分类号： G21H1/06
摘要： A device for producing electricity. In one embodiment the device comprises a germanium substrate doped a first dopant type and a plurality of stacked material layers above the substrate. These stacked material layers further comprise an InGaP base layer doped the first dopant type, an InGaP emitter layer doped the second dopant type, a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type and a beta particle source for generating beta particles.

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