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1. 发明授权

US11609223B2 Device and a method for analysis of cells 有权
公开(公告)号：US11609223B2
公开(公告)日：2023-03-21
申请号：US16035574
申请日：2018-07-13
申请人： IMEC VZW
发明人： Carolina Mora Lopez
IPC分类号： G01N33/483 , G01N27/414 , H03F3/45 , B01L3/00 , B01J19/00
摘要： A device for analysis of cells comprises: an active sensor area (104) presenting a surface for cell growth; a microelectrode array (102) comprising a plurality of pixels (110) in the active sensor area (104), wherein each pixel (110) comprises at least one electrode (120) at the surface, wherein each pixel (110) is configured to control the configuration of the pixel circuitry and set a measurement modality of the pixel; recording circuitry having a plurality of recording channels (130), wherein each pixel (110) is connected to a recording channel (130), wherein each recording channel (130) comprises a reconfigurable component (131), which is selectively controlled between being set to a first mode, in which the reconfigurable component (131) is configured to amplify a received pixel signal, and being set to a second mode, in which the reconfigurable component (131) is configured to selectively pass a frequency band of the received pixel signal.

2. 发明申请

US20230078976A1 MACH-ZEHNDER MODULATOR 有权
公开(公告)号：US20230078976A1
公开(公告)日：2023-03-16
申请号：US17800931
申请日：2021-02-19
申请人： UNIVERSITEIT GENT , IMEC VZW
发明人： Laurens BREYNE
IPC分类号： G02F1/21 , G02F1/225 , G02B6/125
摘要： An electro-optic Mach-Zehnder modulator comprising a first and a second optical waveguide, and a plurality of pairs of electro-optic phase shifters forming segments, for each pair one phase shifter per optical waveguide, distributed over the length of the optical waveguides, wherein the electro-optic phase shifters are configured for phase-modulating the optical signals. The modulator, moreover, comprising at least one crossing element configured for crossing the optical waveguides between two segments.

3. 发明申请

US20230067864A1 System and Method for Photoacoustic Inspection of an Object 有权
公开(公告)号：US20230067864A1
公开(公告)日：2023-03-02
申请号：US17800322
申请日：2021-02-15
申请人： IMEC VZW , Universiteit Gent
发明人： YanLu Li , Roeland Baets
IPC分类号： G01N29/24 , G01N29/46
摘要： The disclosure includes a system for photoacoustic inspection of an object. The system includes a broadband emission source configured to generate an emission beam, a direction apparatus including at least one spectrum splitter configured to split the emission beam into at least a first and a second component, the direction apparatus being configured to sequentially direct the respective components to N respective locations on the object at N times to generate N respective acoustic waves within the object. The N respective locations and N times are such that the respective N acoustic waves at least semi-constructively interfere to generate a respective propagating acoustic wave within the object. The system also includes a vibration sensing system configured to detect said respective propagating acoustic waves at a respective detection location on the object.

4. 发明授权

US11587708B2 Magnetic device with a hybrid free layer stack 有权
公开(公告)号：US11587708B2
公开(公告)日：2023-02-21
申请号：US17038470
申请日：2020-09-30
申请人： IMEC vzw , Katholieke Universiteit Leuven
发明人： Van Dai Nguyen , Sebastien Couet , Olivier Bultynck , Danny Wan , Eline Raymenants
IPC分类号： G11C11/16 , H01F10/32 , G01R33/09 , H01L27/22 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： In one aspect, the disclosed technology relates to a magnetic device, which may be a magnetic memory and/or logic device. The magnetic device can comprise a seed layer; a first free magnetic layer provided on the seed layer; an interlayer provided on the first free magnetic layer; a second free magnetic layer provided on the interlayer; a tunnel barrier provided on the second free magnetic layer; and a fixed magnetic layer. The first free magnetic layer and the second free magnetic layer can be ferromagnetically coupled across the interlayer through exchange interaction.

5. 发明申请

US20230047997A1 TUNABLE HYBRID III-V/IV LASER SENSOR SYSTEM-ON-A CHIP FOR REAL-TIME MONITORING OF A BLOOD CONSTITUENT CONCENTRATION LEVEL 有权
公开(公告)号：US20230047997A1
公开(公告)日：2023-02-16
申请号：US17887981
申请日：2022-08-15
申请人： Brolis Sensor Technology, UAB , Universiteit Gent , IMEC VZW
发明人： Augustinas Vizbaras , Kristijonas Vizbaras , Ieva Simonyte , Günther Roelkens
IPC分类号： A61B5/1455 , G01N21/39
摘要： A spectroscopic laser sensor based on hybrid lll-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a lll-V gain-chip, e.g., an AIGalnAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AIGalnAsSb/GaSb based photodetectors and embedded electronics for signal processing. Embodiments of the invention may be applied for real-time monitoring of critical blood analyte concentration levels such as lactates, urea, glucose, ammonia, albumin, etc.

6. 发明授权

US11557789B2 Solid electrolyte, electrode, power storage device, and method for producing solid electrolytes 有权
公开(公告)号：US11557789B2
公开(公告)日：2023-01-17
申请号：US16481782
申请日：2018-10-31
申请人： IMEC VZW , KATHOLIEKE UNIVERSITEIT LEUVEN , PANASONIC CORPORATION
发明人： Xubin Chen , Philippe Vereecken , Maarten Mees , Knut Bjarne Gandrud , Mitsuhiro Murata , Akihiko Sagara , Yukihiro Kaneko , Morio Tomiyama , Mikinari Shimada
IPC分类号： H01M10/0562 , H01M10/0525 , H01M4/62
摘要： A solid electrolyte (10) of the present disclosure includes porous silica (11) having a plurality of pores (12) interconnected mutually and an electrolyte (13) coating inner surfaces of the plurality of pores (12). The electrolyte (13) includes 1-ethyl-3-methylimidazolium bis(fluorosulfonyl)imide represented by EMI-FSI and a lithium salt dissolved in the EMI-FSI. A molar ratio of the EMI-FSI to the porous silica (11) is larger than 1.0 and less than 3.5.

7. 发明授权

US11557503B2 Method for co-integration of III-V devices with group IV devices 有权
公开(公告)号：US11557503B2
公开(公告)日：2023-01-17
申请号：US16996413
申请日：2020-08-18
申请人： IMEC VZW
发明人： Amey Mahadev Walke , Liesbeth Witters
IPC分类号： H01L21/76 , H01L21/762 , H01L21/02 , H01L21/8249 , H01L27/07
摘要： The present disclosure relates to a semi-conductor structure and method for co-integrating a III-V device with a group IV device on a SixGe1-x(100) substrate. The method includes: (a) providing a SixGe1-x(100) substrate, where x is from 0 to 1; (b) selecting a first region for forming therein a group IV device and a second region for forming therein a III-V device, the first and the second region each comprising a section of the SixGe1-x(100) substrate; (c) forming a trench isolation for at least the III-V device; (d) providing a SiyGe1-y(100) surface in the first region, where y is from 0 to 1; (e) at least partially forming the group IV device on the SiyGe1-y(100) surface in the first region; (f) forming a trench in the second region which exposes the SixGe1-x(100) substrate, the trench having a depth of at least 200 nm, at least 500 nm, at least 1 μm, usually at least 2 μm, such as 4 μm, with respect to the SiyGe1-y(100) surface in the first region; (g) growing a III-V material in the trench using aspect ratio trapping; and (h) forming the III-V device on the III-V material, the III-V device comprising at least one contact region at a height within 100 nm, 50 nm, 20 nm, usually 10 nm, of a contact region of the group IV device.

8. 发明申请

US20230012461A1 MAGNETOELECTRIC DEVICE 有权
公开(公告)号：US20230012461A1
公开(公告)日：2023-01-12
申请号：US17811547
申请日：2022-07-08
申请人： IMEC VZW
发明人： Hanns Christoph ADELMANN , Florin CIUBOTARU
IPC分类号： H01L41/12 , H01L41/20 , H01L41/047
摘要： A magnetoelectric (“ME”) device is disclosed. In one aspect, the ME device includes a first piezoelectric substrate portion and a second piezoelectric substrate portion; a magnetostrictive body with a magnetization oriented in a first direction, the magnetostrictive body arranged on and extending between the first and second portions; a pair of input electrodes arranged on the first portion; and a pair of output electrodes arranged on the second portion. The input electrodes are configured to induce a fringing electric field extending between the input electrodes via the first portion, thereby causing a deformation of the first portion which in turn causes a deformation of the magnetostrictive body such that the magnetization thereof is re-oriented to a second direction due to a reverse magnetostriction. An output voltage is induced between the output electrodes by a deformation of the second portion caused by the re-orientation of the magnetization of the magnetostrictive body.

9. 发明申请

US20230010039A1 Semiconductor Structure 有权
公开(公告)号：US20230010039A1
公开(公告)日：2023-01-12
申请号：US17859294
申请日：2022-07-07
申请人： IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
发明人： Martin Heilmann , Ming Zhao , Nadine Collaert , Bertrand Parvais , Sachin Yadav
IPC分类号： H01L21/8258 , H01L27/06 , H01L21/02 , C30B29/06 , C30B25/18 , C30B29/40 , C23C16/30 , C23C16/02
摘要： A method for manufacturing a semiconductor structure is provided. The method includes a III-V semiconductor device in a first region of a base substrate and a further device in a second region of the base substrate. The method includes: (a) obtaining a base substrate comprising the first region and the second region, different from the first region; (b) providing a buffer layer over a surface of the base substrate at least in the first region, wherein the buffer layer comprises at least one monolayer of a first two-dimensional layered crystal material; (c) forming, over the buffer layer in the first region, and not in the second region, a III-V semiconductor material; and (d) forming, in the second region, at least part of the further device. A semiconductor structure is also provided.

10. 发明授权

US11545621B2 Layer stack for magnetic tunnel junction device 有权
公开(公告)号：US11545621B2
公开(公告)日：2023-01-03
申请号：US15930272
申请日：2020-05-12
申请人： IMEC vzw
发明人： Sebastien Couet , Johan Swerts
IPC分类号： H01L43/10 , G11C11/16 , H01L27/22 , H01L43/02 , H01L43/08 , H01L43/12 , H01F10/30
摘要： The disclosed technology relates generally to semiconductor devices, and more particularly to a layer stack for a magnetic tunnel junction (MTJ) device, and a method of forming the same. According to an aspect, a layer stack for a (MTJ) device comprises a seed layer structure, a pinning layer structure arranged above the seed layer structure, and above the pinning layer structure a Fe-comprising reference layer structure and a free layer structure separated by a tunnel barrier layer. The seed layer structure comprises a Ru-comprising layer and a Cr-comprising layer. The Cr-comprising layer forms an upper layer of the seed layer structure.

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