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    • 5. 发明申请
    • MODULAR ACTIVE RADIATING DEVICE FOR ELECTRONICALLY SCANNED ARRAY ANTENNAS
    • 用于电子扫描阵列天线的模块化主动放大器件
    • US20130249772A1
    • 2013-09-26
    • US13847711
    • 2013-03-20
    • SELEX ES S.P.A.
    • Leopoldo INFANTEMario TEGLIAArmando CIATTAGLIA
    • H01Q21/00
    • H01Q21/00H01Q21/0093
    • The invention concerns a device in the domain of AESA (“Active Electronically Scanned Array”) systems required for e.g. radar multifunctional systems with communication capabilities and electronic/analysis countermeasures, providing a constructive element for the realization of modular active radiating panels, which are economic and scalable depending on the system needs, to be used on multi-roles and multi-domains platforms. The architecture according to the invention presents a so-called “tile” architecture and uses a multilayer configuration incorporating the radiating elements, the control and supply controls, the transmitting/receiving (T/R) modules, the cooling system by using vertical interconnections, having a low cost and high integration.
    • 本发明涉及例如所需的AESA(“ActiveElectrical Scanning Array”系统)领域的装置。 具有通信能力和电子/分析对策的雷达多功能系统,为实现多角色和多域平台所使用的经济和可扩展的模块化有源辐射面板提供了建设性元素,这取决于系统需求。 根据本发明的架构提出了所谓的“瓦片”架构,并且使用包括辐射元件,控制和供应控制,发送/接收(T / R)模块,使用垂直互连的冷却系统的多层配置, 具有低成本和高集成度。
    • 8. 发明申请
    • SMF-TYPE COMMUNICATION METHOD FOR A MANET NETWORK, NETWORK NODE AND MOBILE NETWORK WHICH IMPLEMENT THIS COMMUNICATION METHOD
    • 用于网络网络,网络节点和移动网络的SMF类型通信方法,其实现该通信方法
    • US20160072699A1
    • 2016-03-10
    • US14784012
    • 2014-04-11
    • SELEX ES S.P.A.
    • Francesco GEINiccolo PRIVITERAGabriele TAMEA
    • H04L12/761H04L12/18H04W40/24H04L12/733
    • H04L45/16H04L12/185H04L45/20H04L45/26H04W40/246H04W40/26H04W84/18
    • A communication method of the SMF type for a network of nodes including a multicast group. The method includes the steps, performed by a first node, of: determining a set of respective multipoint relays; determining the nodes for which the first node is a multipoint relay; determining a routing table including identifiers of destination nodes and corresponding identifiers of next-hop nodes; receiving a multicast packet sent from a sending node, where the first node is a multipoint relay; checking if, for each node identifier of the multicast group, the entry in the routing table that includes a destination node identifier corresponding to the node identifier of the multicast group contains a next-hop node identifier that corresponds to the sending node, and if the counter contained in the multicast packet respects a relation with a limit; and determining whether to retransmit the multicast packet, on the basis of the outcome of the checking step.
    • 用于包括多播组的节点网络的SMF类型的通信方法。 该方法包括由第一节点执行的步骤:确定一组相应的多点中继; 确定第一节点是多点中继的节点; 确定包括目的地节点的标识符和下一跳节点的相应标识符的路由表; 接收从发送节点发送的组播分组,其中所述第一节点是多点中继; 检查对于组播组的每个节点标识符,包括与组播组的节点标识符相对应的目的地节点标识符的路由表中的条目包含与发送节点相对应的下一跳节点标识符,并且如果 组播数据包中包含的计数器与限制有关的关系; 以及基于所述检查步骤的结果来确定是否重传所述多播分组。
    • 10. 发明授权
    • High electron mobility transistors with field plate electrode
    • 具有场板电极的高电子迁移率晶体管
    • US09577064B2
    • 2017-02-21
    • US13813337
    • 2011-08-02
    • Marco PeroniPaolo Romanini
    • Marco PeroniPaolo Romanini
    • H01L29/66H01L29/40H01L29/423H01L29/778
    • H01L29/66431H01L29/402H01L29/405H01L29/42316H01L29/778H01L29/7787
    • A high electron mobility transistor comprising: an epitaxial substrate comprising a semi-insulating substrate, a buffer layer and a barrier layer sequentially stacked; a first and a second current conducting electrode formed on, and in ohmic contact with, the barrier layer; a control gate and one or more field plate electrode(s) formed on, and in contact with, the barrier layer between the first and second current conducting electrodes; and an electric circuit formed for electrically connecting each field plate electrode to an electric reference potential and comprising at least a rectifying contact and/or an electric resistor, wherein the rectifying contact is formed outside the channel area of the high electron mobility transistor and is distinguished from the rectifying contact formed by the corresponding field plate electrode.
    • 一种高电子迁移率晶体管,包括:外延衬底,包括半绝缘衬底,缓冲层和顺序堆叠的势垒层; 第一和第二导电电极,形成在阻挡层上并与阻挡层欧姆接触; 控制栅极和形成在第一和第二导电电极之间并与第一和第二导电电极之间的阻挡层接触的一个或多个场板电极; 以及形成用于将每个场板电极电连接到电参考电位并且至少包括整流触点和/或电阻器的电路,其中所述整流触点形成在所述高电子迁移率晶体管的沟道区域的外侧,并且被区分 由相应的场板电极形成的整流接点。