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1. 发明申请

US20210360184A1 A PIXEL READOUT CIRCUIT AND A METHOD FOR IMAGING 有权
公开(公告)号：US20210360184A1
公开(公告)日：2021-11-18
申请号：US17284883
申请日：2019-10-10
申请人： SEMI CONDUCTOR DEVICES-AN ELBIT SYSTEMS-RAFAEL PARTNERSHIP
发明人： Claudio Gabriel Jakobson , Nimrod Ben-Ari , Itzhak Nevo , Niv Shiloah
IPC分类号： H04N5/378 , H04N5/357 , H04N5/353
摘要： A pixel readout circuit and a technique for imaging are disclosed. The circuit includes: an array of pixel integration circuits, each adapted for receiving an electric signal indicative of photocurrent of light sensitive pixel of a pixel matrix, integrate the electric signal over a frame period, and output the integrated signal at an imaging frame rate being one over the period; and an array of pixel derivation circuits, each includes a signal preprocessing channel for receiving a total electric signal indicative of at least a component of the photocurrent(s) of a cluster of respective light sensitive pixel(s); and a comparison unit adapted to analyze the total electric signal to determine digital data indicative of a change in the total electric signal relative to one or more thresholds; and a digital output utility adapted to readout of the digital data at a second rate different than the frame rate.

2. 发明授权

US08004012B2 Unipolar semiconductor photodetector with suppressed dark current and method for producing the same 有权
标题翻译：具有抑制暗电流的单极半导体光电探测器及其制造方法
公开(公告)号：US08004012B2
公开(公告)日：2011-08-23
申请号：US12295228
申请日：2007-03-29
申请人： Philip Klipstein
发明人： Philip Klipstein
IPC分类号： H01L21/02 , H01L31/00
CPC分类号： H01L31/101
摘要： A photo-detector with a reduced G-R noise comprises two n-type narrow bandgap layers surrounding a middle barrier layer having an energy bandgap at least equal to the sum of the bandgaps of the two narrow bandgap layers. Under the flat band conditions the conduction band edge of each narrow bandgap layer lies below the conduction band edge of the barrier layer by at least the bandgap energy of the other narrow bandgap layer. When biased with an externally applied voltage, the more negatively biased narrow bandgap layer is the contact layer and the more positively biased narrow bandgap layer is the photon absorbing layer. Under external bias conditions the bands in the photon absorbing layer next to the barrier layer are flat or accumulated, and the flat part of the valence band edge in the photon absorbing layer lies below the flat part of the valence band edge of the contact layer and has an energy of not more than 10kTop above the valence band edge in any part of the barrier layer (k=Boltzman constant and Top=operating temperature).
摘要翻译：具有降低的G-R噪声的光检测器包括围绕中间势垒层的两个n型窄带隙层，其具有至少等于两个窄带隙层的带隙之和的能带隙。在平带条件下，每个窄带隙层的导带边缘至少位于另一窄带隙层的带隙能量之下，位于阻挡层的导带边缘之下。当被外部施加的电压偏置时，更偏负的窄带隙层是接触层，并且较正偏置的窄带隙层是光子吸收层。在外部偏置条件下，阻挡层旁边的光子吸收层中的带平坦或累积，并且光子吸收层中的价带边缘的平坦部分位于接触层的价带边缘的平坦部分的下方，在阻挡层的任何部分（k = Boltzman常数和Top =工作温度）中的价带边缘之上的能量不超过10kTop。

3. 发明授权

US07807969B2 Method and system for determining the rate of non uniformity of bolometer based systems 有权
标题翻译：用于确定基于测辐射热基系统的非均匀性速率的方法和系统
公开(公告)号：US07807969B2
公开(公告)日：2010-10-05
申请号：US11886681
申请日：2006-01-12
申请人： Udi Mizrahi , Avraham Fraenkel , Zvi Kopolovich , Amnon Adin , Leonid Bikov
发明人： Udi Mizrahi , Avraham Fraenkel , Zvi Kopolovich , Amnon Adin , Leonid Bikov
IPC分类号： G01J5/00
CPC分类号： H04N5/33 , G01J5/20
摘要： A focal plan array system of the bolometer type having means for determining the rate of non-uniformity which comprises: (a) an array of i×j pixel detectors of the bolometer type for sensing scenery radiation; (b) a case which accommodates said array of detectors, said case having a front window that provides exposure to the sensing element of all the i×j pixel detectors to radiation coming from the scenery; (c) at least a portion of column j+1 of blind detectors that are shielded from the scenery by a homogeneous reference surface; (d) reading circuitry for reading indication for the scenery radiation as sensed by each of the i×j detectors of the array, and for reading indication for the non uniformity as sensed by said detectors in column (j+1); (e) a register for recording the radiation values as read from all the detectors within column (j+1); and (f) a processing unit for finding the standard deviation σ of all the values in said register, and for comparing the same to a predetermined threshold Q, wherein a standard deviation above Q being an indication for a non uniformity above the allowed level.
摘要翻译：测辐射热计型的焦点计划阵列系统具有用于确定不均匀率的装置，其包括：（a）用于感测风景辐射的测辐射热表类型的i×j像素检测器的阵列; （b）容纳所述检测器阵列的壳体，所述壳体具有向所述i×j像素检测器的所述感测元件暴露于来自所述风景的辐射的前窗; （c）盲目检测器的列j + 1的至少一部分通过均匀的参考表面与风景隔离; （d）读取电路，用于读取由阵列的每个i×j个检测器感测到的风景辐射的指示，并且用于读取由列（j + 1）中的所述检测器感测到的非均匀性的指示; （e）用于记录从列（j + 1）内的所有检测器读取的辐射值的寄存器; 和（f）用于求出标准偏差＆sgr的处理单元; 并且用于将其与预定阈值Q进行比较，其中高于Q的标准偏差是高于允许电平的非均匀性的指示。

4. 发明授权

US09613999B2 Semiconductor device 有权
公开(公告)号：US09613999B2
公开(公告)日：2017-04-04
申请号：US15099492
申请日：2016-04-14
申请人： Semi Conductor Devices—an Elbit Systems—Rafael Partnership
发明人： Philip Klipstein , Olga Klin , Eliezer Weiss
IPC分类号： H01L27/00 , H01L31/00 , H01L27/146 , H01L31/0352 , H01L31/09 , H01L31/108 , H01L31/18 , H01L31/0216 , H01L31/0304 , H01L31/109
CPC分类号： H01L27/14649 , H01L27/1462 , H01L27/14629 , H01L27/14634 , H01L27/14636 , H01L27/14685 , H01L27/14689 , H01L27/14698 , H01L31/02161 , H01L31/03046 , H01L31/035236 , H01L31/09 , H01L31/108 , H01L31/109 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： A semiconductor device is disclosed, which includes: at least one a device layer being a crystallized layer for example including: a superlattice layer and/or a layer of group III-V semiconductor materials; and a passivation structure comprising one or more layers wherein at least one layer of the passivation structure is a passivation layer grown in-situ in a crystallized form on top of the device layer, and at least one of the one or more layers of the passivation structure includes material having a high density of surface states which forces surface pinning of an equilibrium Fermi level within a certain band gap of the device layer, away from its conduction and valence bands.

5. 发明授权

US09215386B2 Detector pixel signal readout circuit using an AC signal component in implementing an event detection mode per pixel 有权
标题翻译：使用AC信号分量的每个像素实现事件检测模式的检测器像素信号读出电路
公开(公告)号：US09215386B2
公开(公告)日：2015-12-15
申请号：US13440537
申请日：2012-04-05
申请人： Shimon Elkind , Elad Ilan , Roman Dobromislin
发明人： Shimon Elkind , Elad Ilan , Roman Dobromislin
IPC分类号： H04N5/343 , H04N5/335 , H04N5/3745
CPC分类号： H04N5/343 , H04N5/335 , H04N5/3745
摘要： A pixel readout circuit for use with an imaging pixel array, comprising: an input channel for receiving an image signal corresponding to an electrical output of a photosensitive element of the pixel; and an electronic circuit interconnected between an input channel and an output readout utility. The electronic circuit comprises a capacitive unit, and a single analyzer. The capacitive unit is controllably linked to the input channel for accumulating a charge corresponding to received intensity generated by the pixel during a single frame period, and is connected to the output readout utility.
摘要翻译：一种与成像像素阵列一起使用的像素读出电路，包括：用于接收与像素的感光元件的电输出对应的图像信号的输入通道; 以及在输入通道和输出读取实用程序之间互连的电子电路。电子电路包括电容单元和单个分析器。电容单元被可控地链接到输入通道，用于在单个帧周期期间累积对应于由像素生成的接收强度的电荷，并且连接到输出读出实用程序。

6. 发明授权

US08586928B2 Thermography based system and method for detecting counterfeit drugs 失效
标题翻译：基于热成像的系统和检测假药的方法
公开(公告)号：US08586928B2
公开(公告)日：2013-11-19
申请号：US12672593
申请日：2008-08-07
申请人： Eran Sinbar , Yoav Weinstein
发明人： Eran Sinbar , Yoav Weinstein
IPC分类号： G01N21/95
CPC分类号： G01N33/15 , G01J2005/0081 , G01N21/9508 , G01N25/72
摘要： A system and a method for determining the authenticity of a pharmaceutical product. The product is actively cooled to a temperature below ambient temperature. One or more thermographic IR images of the product are acquired in a wavelength or wavelength spectrum selected from the mid wave IR (MWIR) to very long wave IR (VLWIR) spectrum. At least one of the images is acquired while the temperature of the product is below ambient temperature. The acquired one or more images of the product or a quantified value deduced therefrom are compared with a signature of a reference drug. The comparison is displayed, thereby enabling determination of the authenticity of the product.
摘要翻译：用于确定药品的真实性的系统和方法。产品主动冷却到低于环境温度的温度。在从中波IR（MWIR）到非常长波IR（VLWIR）光谱中选择的波长或波长光谱中获取产品的一个或多个热成像IR图像。当产品的温度低于环境温度时，获取至少一幅图像。获得的产品的一个或多个图像或从其推导的量化值与参考药物的签名进行比较。显示比较，从而能够确定产品的真实性。

7. 发明授权

US07795640B2 Depletion-less photodiode with suppressed dark current and method for producing the same 有权
标题翻译：具有抑制暗电流的无耗光光电二极管及其制造方法
公开(公告)号：US07795640B2
公开(公告)日：2010-09-14
申请号：US10561729
申请日：2004-06-28
申请人： Philip Klipstein
发明人： Philip Klipstein
IPC分类号： H01L21/00
CPC分类号： H01L31/101
摘要： The invention relates to a photo-detector with a reduced G-R noise, which comprises a sequence of a p-type contact layer, a middle barrier layer and an n-type photon absorbing layer, wherein the middle barrier layer has an energy bandgap significantly greater than that of the photon absorbing layer, and there is no layer with a narrower energy bandgap than that in the photon-absorbing layer.
摘要翻译：本发明涉及具有降低的GR噪声的光检测器，其包括p型接触层，中间阻挡层和n型光子吸收层的序列，其中中间阻挡层具有明显更大的能带隙与光子吸收层相比，没有比光子吸收层具有更窄的能带隙的层。

8. 发明授权

US10573675B2 Dual band photodetector and a method thereof 有权
公开(公告)号：US10573675B2
公开(公告)日：2020-02-25
申请号：US15636821
申请日：2017-06-29
申请人： SEMI CONDUCTOR DEVICES-AN ELBIT SYSTEMS-RAFAEL PARTNERSHIP
发明人： Philip Klipstein
IPC分类号： H01L27/144 , H01L31/0216 , H01L31/0232 , H01L31/18 , H01L31/0304 , H01L31/0352 , H01L31/108 , H01L31/109
摘要： Photodetectors and methods for dual band photo detection are disclosed. The photodetector includes a stack of semiconductor layers defining first and second unipolar photosensitive modules (UPMs) of respectively opposite doping polarities, and a contact layer including at least one of metal and semiconductor materials having doping polarity opposite to that of the second UPM. The first and second UPMs are adapted for sensing radiation of different respective first and second wavelengths ranges. The second UPM is located upon the first UPM thereby forming a first diode junction between the first and second UPMs. The contact layer is located on the second UPM thereby forming a second diode junction between the second UPM and the contact layer. The first and second diode junctions are configured to have respectively opposite conduction directions, enabling selective sensing of electrical signals associated with the first and second wavelengths ranges.

9. 发明授权

US10222266B2 Ruggedized dewar unit for integrated Dewar detector assembly 有权
公开(公告)号：US10222266B2
公开(公告)日：2019-03-05
申请号：US14638945
申请日：2015-03-04
申请人： Semi Conductor Devices—an Elbit Systems-Rafael Partnership
发明人： Alexander Veprik
IPC分类号： F25B9/00 , G01J5/06 , B01D8/00 , G01J5/02 , G12B3/08 , F16F7/00 , F16F9/04 , G01J5/04 , F17C13/00 , F25D19/00 , H01L31/024 , H02S40/44
摘要： An Integrated Dewar Detector Assembly (IDDA) is presented. The IDDA comprises: a cold finger base; an elongated Dewar envelope having a proximal end associated with the cold finger base and a distal end comprising an optical window; an elongated tubular cold finger located inside said elongated Dewar envelope and having a proximal end at the cold finger base and a distal end for carrying a detector so as to expose the detector to incoming radiation through said optical window; an internal front support member extending from an inner surface of the Dewar envelope at its distal end to the distal end of the cold finger; and at least one wideband dynamic vibration absorber assembly located outside the Dewar envelope and attached to at least one location on an exterior surface of the Dewar envelope, said dynamic vibration absorber thereby attenuating vibration of the cold finger and the detector.

10. 发明授权

US10079262B2 Semiconductor photo-detector 有权
公开(公告)号：US10079262B2
公开(公告)日：2018-09-18
申请号：US15442999
申请日：2017-02-27
申请人： SEMI CONDUCTOR DEVICES—AN ELBIT SYSTEMS-RAFAEL PARTNERSHIP
发明人： Philip Klipstein , Olga Klin , Eliezer Weiss
IPC分类号： H01L31/00 , H01L27/00 , H01L27/146 , H01L31/0304 , H01L31/0352 , H01L31/09 , H01L31/108 , H01L31/109 , H01L31/18
摘要： A semiconductor device is disclosed, which includes: at least one device layer being a crystallized layer for example including: a superlattice layer and/or a layer of group III-V semiconductor materials; and a passivation structure comprising one or more layers wherein at least one layer of the passivation structure is a passivation layer grown in-situ in a crystallized form on top of the device layer, and at least one of the one or more layers of the passivation structure includes material having a high density of surface states which forces surface pinning of an equilibrium Fermi level within a certain band gap of the device layer, away from its conduction and valence bands.

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