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1. 发明授权

US09484377B2 CMOS image sensor including infrared pixels having improved spectral properties, and method of manufacturing same 有权
标题翻译：包括具有改进的光谱特性的红外像素的CMOS图像传感器及其制造方法
公开(公告)号：US09484377B2
公开(公告)日：2016-11-01
申请号：US14649710
申请日：2013-11-15
申请人： SiliconFile Technologies Inc.
发明人： Jun Ho Won , Won Ho Lee , Do Young Lee
IPC分类号： H01L27/146 , H04N9/04
CPC分类号： H01L27/1463 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14645 , H01L27/14649 , H01L27/14685 , H01L27/14689 , H04N9/045
摘要： The present invention relates to a CMOS image sensor including an infrared pixel with enhanced spectral characteristics in which a stepped portion is formed between color filters of RGB pixels and a filter of an infrared pixel, and a manufacturing method thereof. A stepped portion is formed between color filters and an infrared filter according to respective pixels and the thicknesses of the filters are arbitrarily adjusted regardless of the characteristics of material in the formation of the color filters and the infrared filter, so that crosstalk characteristics are improved.
摘要翻译：本发明涉及一种CMOS图像传感器及其制造方法，该CMOS图像传感器包括具有增强的光谱特性的红外像素及其制造方法，其中在RGB像素的滤色器和红外像素的滤色器之间形成台阶部分。根据各个像素，在滤色器和红外滤光器之间形成阶梯部分，并且无论滤色器和红外滤光器的形成中的材料的特性如何，都可任意调节滤光片的厚度，从而提高串扰特性。

2. 发明申请

US20160204157A1 BACKLIGHT IMAGE SENSOR CHIP HAVING IMPROVED CHIP DRIVING PERFORMANCE 有权
标题翻译：背光图像传感器芯片具有改进的芯片驱动性能
公开(公告)号：US20160204157A1
公开(公告)日：2016-07-14
申请号：US14912373
申请日：2014-08-12
申请人： SILICONFILE TECHNOLOGIES INC.
发明人： Kyoung-Sik PARK , Heui Gyun AHN , Min-Suk KO , Gab-Hwan CHO
IPC分类号： H01L27/146
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14627 , H01L27/14634 , H01L27/14636 , H01L27/1469
摘要： The present invention relates to a backlight image sensor chip having improved chip driving performance, in which a region other than a pad region, on which a conductive pad is formed, and a sensing region, on which an optical filter is formed, is used as a region for auxiliary driving so that additional functions such as auxiliary power supply, auxiliary signal transmission and auxiliary operation control can be performed, without additional process, in the backlight image sensor chip having a restricted area, thereby improving the chip driving performance.
摘要翻译：本发明涉及具有改进的芯片驱动性能的背光源图像传感器芯片，其中形成有导电焊盘的焊盘区域以外的区域和形成有滤光器的感测区域被用作在具有限制区域的背光图像传感器芯片中，可以在没有附加处理的情况下进行辅助驱动的区域，从而可以执行辅助电源，辅助信号传输和辅助操作控制等附加功能，从而提高芯片驱动性能。

3. 发明授权

US08906781B2 Method for electrically connecting wafers using butting contact structure and semiconductor device fabricated through the same 有权
标题翻译：使用对接接触结构和通过其制造的半导体器件电连接晶片的方法
公开(公告)号：US08906781B2
公开(公告)日：2014-12-09
申请号：US14079075
申请日：2013-11-13
申请人： Siliconfile Technologies Inc.
发明人： In Gyun Jeon
IPC分类号： H01L21/46 , H01L25/00 , H01L23/48 , H01L23/00 , H01L21/768 , H01L27/146
CPC分类号： H01L25/50 , H01L21/76802 , H01L21/76898 , H01L21/8221 , H01L23/481 , H01L24/06 , H01L24/07 , H01L24/08 , H01L24/80 , H01L24/82 , H01L24/92 , H01L27/14612 , H01L27/14632 , H01L27/14634 , H01L27/14636 , H01L27/14687 , H01L27/1469 , H01L2224/05571 , H01L2224/05573 , H01L2224/05647 , H01L2224/05686 , H01L2224/06051 , H01L2224/06505 , H01L2224/06517 , H01L2224/08146 , H01L2224/08147 , H01L2224/80895 , H01L2224/80896 , H01L2224/82031 , H01L2224/821 , H01L2224/9202 , H01L2224/9212 , H01L2924/00014 , H01L2924/12043 , H01L2224/82 , H01L2924/00012 , H01L2924/053 , H01L2224/05552 , H01L2924/00
摘要： The present invention relates to a method for electrically connecting wafers, which physically bonds two wafers through an oxide-to-oxide bonding method and then electrically connects the two wafers through a butting contact structure. The wafers are physically bonded to each other through a relatively simple method, and then electrically connected to through TSVs or butting contact holes. Therefore, since the fabrication process may be simplified, a process error may be reduced, and the product yield may be improved.
摘要翻译：本发明涉及一种用于电连接晶片的方法，其通过氧化物 - 氧化物接合方法物理地结合两个晶片，然后通过对接接触结构电连接两个晶片。晶片通过相对简单的方法物理地彼此结合，然后通过TSV或对接接触孔电连接。因此，由于可以简化制造工艺，可以减少加工误差，可以提高产品成品率。

4. 发明申请

US20140191357A1 MULTI-SUBSTRATE IMAGE SENSOR HAVING A DUAL DETECTION FUNCTION 有权
标题翻译：具有双检测功能的多基板图像传感器
公开(公告)号：US20140191357A1
公开(公告)日：2014-07-10
申请号：US14237853
申请日：2012-08-08
申请人： Do Young Lee
发明人： Do Young Lee
IPC分类号： H01L27/146
CPC分类号： H01L27/14634 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14638 , H01L27/1464 , H01L27/14643 , H04N5/3745 , H04N5/37457 , H04N9/045 , H04N13/239
摘要： The present invention relates to an image sensor in which substrates are stacked, wherein a substrate-stacked image sensor according to the present invention is configured such that a first photodiode is formed on a first substrate, a second photodiode is formed on a second substrate, the two substrates are aligned with and bonded to each other to electrically couple the two photodiodes to each other, thereby forming a complete photodiode within one pixel.
摘要翻译：本发明涉及一种其中堆叠基板的图像传感器，其中根据本发明的基板堆叠图像传感器被配置为使得第一光电二极管形成在第一基板上，第二光电二极管形成在第二基板上，两个基板彼此对齐并且彼此结合，以将两个光电二极管彼此电耦合，从而在一个像素内形成完整的光电二极管。

5. 发明授权

US08658975B2 Image sensor for measuring illumination, proximity and color temperature 有权
标题翻译：用于测量照度，接近度和色温的图像传感器
公开(公告)号：US08658975B2
公开(公告)日：2014-02-25
申请号：US12793066
申请日：2010-06-03
申请人： Byoung-Su Lee , Chan-Ki Kim , Young-Ho Seo
发明人： Byoung-Su Lee , Chan-Ki Kim , Young-Ho Seo
IPC分类号： G02F1/01 , H01L31/00
CPC分类号： G01S17/89 , G01J3/02 , G01J3/0208 , G01J3/027 , G01J3/0278 , G01J3/51 , G01J3/513 , G01S7/4816 , G01S7/491 , G01S17/87 , H04N5/2256 , H04N5/33 , H04N5/3696
摘要： Disclosed is an image sensor for measuring illumination, proximity and color temperature, including: a light source unit configured to irradiate infrared with a wavelength of a specific band onto an object; a light source controller configured to control power supplied to the light source unit; an infrared transmission filter configured to allow only the infrared and visible ray with the wavelength of the specific band among light incident through a lens after being reflected by the object to selectively transmit therethrough; a first sensing unit provided with an image pixel for acquiring an image of the object introduced through the infrared transmission filter; and a second sensing unit configured to receive the infrared and the visible ray having passed through the infrared transmission filter and measure current illumination, proximity to the object and color temperature of the object.
摘要翻译：公开了一种用于测量照明，接近度和色温的图像传感器，包括：光源单元，被配置为将具有特定波段的波长的红外线照射到物体上; 光源控制器，被配置为控制提供给所述光源单元的电力; 红外线透射滤光器，其被配置为仅在被物体反射后仅允许通过透镜入射的光中的特定波段的红外线和可见光线从而选择性地透射; 第一感测单元，设置有用于获取通过红外线透射滤光器引入的物体的图像的图像像素; 以及第二感测单元，被配置为接收已经穿过红外线透射滤光器的红外线和可见光，并且测量当前照明，物体的接近度和物体的色温。

6. 发明授权

US08361392B2 Biochip having image sensor with back side illumination photodiode 有权
标题翻译：具有背面照明光电二极管的图像传感器的生物芯片
公开(公告)号：US08361392B2
公开(公告)日：2013-01-29
申请号：US12985083
申请日：2011-01-05
申请人： Byoung Su Lee , Do Young Lee
发明人： Byoung Su Lee , Do Young Lee
IPC分类号： G01N21/00 , C40B60/00 , H01L31/0232 , H01L31/00 , G01N21/64 , G01J1/58
CPC分类号： H01L27/14603 , G01N21/6454 , H01L27/14621 , H01L27/14627 , H01L27/1464
摘要： A biochip having an image sensor with a back side illumination photodiode structure includes: a biochip layer; and an image sensor layer attached to one surface of the biochip layer and configured to sense light with biochemical reaction information, which is emitted from the biochip layer, wherein the image sensor layer includes a plurality of light sensing parts which receive the light directed toward a back side of a wafer.
摘要翻译：具有背面照明光电二极管结构的图像传感器的生物芯片包括：生物芯片层; 以及图像传感器层，其附接到所述生物芯片层的一个表面并且被配置为用从所述生物芯片层发射的生化反应信息感测光，其中所述图像传感器层包括多个光敏部分，所述多个光感测部件接收朝向晶片背面。

7. 发明授权

US08304727B2 Image sensor capable of judging proximity to subject 有权
标题翻译：图像传感器能够判断对象的接近度
公开(公告)号：US08304727B2
公开(公告)日：2012-11-06
申请号：US12697810
申请日：2010-02-01
申请人： Byoung-Su Lee , Young-Ho Seo
发明人： Byoung-Su Lee , Young-Ho Seo
IPC分类号： H01L31/00
CPC分类号： H04N5/2354 , H04N5/2254 , H04N5/2256 , H04N5/232 , H04N5/23245
摘要： An image sensor is capable of judging proximity to a subject. The image sensor judges the distance to the subject using a change in output voltage value by the presence or absence of a specific band of wavelengths of infrared (IR) measured by optical sensors such as proximity pixels. Thereby, the image sensor enables an ordinary image sensor to easily realize a proximity function, and makes it possible to minimize damage to a quality of image when the image is picked up in a night photography mode or in a proximity photography mode.
摘要翻译：图像传感器能够判断与被摄体的接近度。图像传感器通过存在或不存在由光学传感器（例如接近像素）测量的特定红外波段（IR），使用输出电压值的变化来判断与被摄体的距离。因此，图像传感器能够使普通图像传感器容易地实现接近功能，并且可以在夜间拍摄模式或邻近拍摄模式下拍摄图像时使对图像质量的损害最小化。

8. 发明申请

US20120264251A1 SEPARATION TYPE UNIT PIXEL OF 3-DIMENSIONAL IMAGE SENSOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：三维图像传感器的分离型单元像素及其制造方法
公开(公告)号：US20120264251A1
公开(公告)日：2012-10-18
申请号：US13531530
申请日：2012-06-23
申请人： Do Young LEE
发明人： Do Young LEE
IPC分类号： H01L31/18
CPC分类号： H01L27/14634 , H01L27/14609 , H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H01L27/1469
摘要： A separation type unit pixel of an image sensor, which can control light that incidents onto a photodiode at various angles, and be suitable for a zoom function in a compact camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The unit pixel of an image sensor includes: a first wafer including a photodiode containing impurities having an impurity type opposite to that of a semiconductor material and a pad for transmitting photoelectric charge of the photodiode to outside; a second wafer including a pixel array region in which transistors except the photodiode are arranged regularly, a peripheral circuit region having an image sensor structure except the pixel array, and a pad for connecting pixels with one another; and a connecting means connecting the pad of the first wafer and the pad of the second wafer.
摘要翻译：提供了一种图像传感器的分离型单位像素，其制造方法可以通过确保入射角度边缘来控制以各种角度发生在光电二极管上的光并适用于小型照相机模块中的变焦功能。图像传感器的单位像素包括：包括具有与半导体材料相反的杂质的杂质的光电二极管的第一晶片和用于将光电二极管的光电荷传输到外部的焊盘; 包括除了光电二极管之外的晶体管被规则地排列的像素阵列区域的第二晶片，具有除像素阵列之外的图像传感器结构的外围电路区域和用于彼此连接像素的焊盘; 以及连接装置，其连接第一晶片的焊盘和第二晶片的焊盘。

9. 发明授权

US08258559B2 Image sensor photodiode arrangement 有权
标题翻译：图像传感器光电二极管布置
公开(公告)号：US08258559B2
公开(公告)日：2012-09-04
申请号：US12741931
申请日：2008-11-10
申请人： Byoung-Su Lee
发明人： Byoung-Su Lee
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14641 , H01L27/14643
摘要： The present invention relates to a technology for reducing dark current noise by discharging electrons accumulated on a surface of an image sensor photodiode. In an N-type or P-type photodiode, a channel is formed between the photodiode and a power voltage terminal, so that electrons (or holes) accumulated on a surface of the photodiode are discharged to the power voltage terminal through the channel.
摘要翻译：本发明涉及通过放电积累在图像传感器光电二极管的表面上的电子来减少暗电流噪声的技术。在N型或P型光电二极管中，在光电二极管和电源电压端子之间形成通道，使得积聚在光电二极管表面的电子（或空穴）通过通道被排放到电源电压端子。

10. 发明授权

US08030190B2 Method of manufacturing crystalline semiconductor thin film 有权
标题翻译：晶体半导体薄膜的制造方法
公开(公告)号：US08030190B2
公开(公告)日：2011-10-04
申请号：US12668185
申请日：2008-07-15
申请人： Byoung-Su Lee
发明人： Byoung-Su Lee
IPC分类号： H01L21/20
CPC分类号： H01L21/02667 , H01L21/02422 , H01L21/02532
摘要： Provided is a method of manufacturing a crystalline semiconductor thin film formed on an amorphous or poly-crystalline substrate such as a glass substrate, a ceramic substrate, and a plastic substrate through induction heating using photo-charges. The method of manufacturing a crystalline semiconductor thin film includes a process of forming a low-concentration semiconductor layer on an inexpensive amorphous or poly-crystalline substrate such as a glass substrate, a ceramic substrate, and a plastic substrate and a process of crystallizing the low-concentration semiconductor layer through an induction heating manner using photo-charges. Accordingly, a low-concentration crystalline semiconductor thin film having characteristics better than those of general amorphous or poly-crystalline semiconductor thin film can be obtained by using simple processes at low production cost.
摘要翻译：提供了通过使用光电荷的感应加热来制造形成在诸如玻璃基板，陶瓷基板和塑料基板的非晶或多晶体基板上的结晶半导体薄膜的方法。制造结晶半导体薄膜的方法包括在诸如玻璃基板，陶瓷基板和塑料基板的便宜的非晶或多晶基板上形成低浓度半导体层的工艺和使低 - 浓缩半导体层，通过使用光电荷的感应加热方式。因此，通过以低的制造成本使用简单的工艺，可以获得具有比一般的非晶或多晶半导体薄膜的特性更好的特性的低浓度结晶半导体薄膜。

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