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1. 发明授权

US08716727B2 Ac light emitting device having photonic crystal structure and method of fabricating the same 有权
标题翻译：具有光子晶体结构的Ac发光器件及其制造方法
公开(公告)号：US08716727B2
公开(公告)日：2014-05-06
申请号：US12065063
申请日：2006-09-06
申请人： Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Jong Kyu Kim , Jun Hee Lee
发明人： Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Jong Kyu Kim , Jun Hee Lee
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L33/007 , H01L33/20 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265
摘要： Disclosed is an AC light emitting device having photonic crystal structures and a method of fabricating the same. The light emitting device includes a plurality of light emitting cells and metallic wirings electrically connecting the light emitting cells with one another. Further, each of the light emitting cells includes a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. In addition, a photonic crystal structure is formed in the second conductive type semiconductor layer. The photonic crystal structure prevents light emitted from the active layer from laterally propagating by means of a periodic array, such that light extraction efficiency of the light emitting device can be improved. Furthermore, the metallic wirings electrically connect a plurality of light emitting cells with one another such that an AC light emitting device can be provided.
摘要翻译：公开了具有光子晶体结构的AC发光器件及其制造方法。发光器件包括多个发光单元和将发光单元彼此电连接的金属布线。此外，每个发光单元包括第一导电类型半导体层，设置在第一导电类型半导体层的一个区域上的第二导电类型半导体层以及置于第一和第二导电类型半导体层之间的有源层。此外，在第二导电型半导体层中形成光子晶体结构。光子晶体结构防止从有源层发射的光通过周期性阵列横向传播，使得可以提高发光器件的光提取效率。此外，金属配线将多个发光单元彼此电连接，从而可以提供交流发光装置。

2. 发明申请

US20140091338A1 LIGHT EMITTING DIODE 有权
标题翻译：发光二极管
公开(公告)号：US20140091338A1
公开(公告)日：2014-04-03
申请号：US14099423
申请日：2013-12-06
申请人： Seoul Opto Device Co., Ltd.
发明人： Jong Kyu KIM , So Ra Lee , Ho Jun Suk , Jin Cheol Shin
IPC分类号： H01L33/08 , H01L33/58
CPC分类号： H01L33/08 , H01L27/156 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： Exemplary embodiments of the present invention relate to light emitting diodes including a plurality of light emitting cells on a substrate to be suitable for AC driving. The light emitting diode includes a substrate and a plurality of light emitting cell formed on the substrate. Each light emitting cell includes a first region at a boundary of the light emitting cell and a second region opposite to the first region. A first electrode pad is formed in the first region of the light emitting cell. A second electrode pad having a linear shape is disposed to face the first electrode pad while regionally defining a peripheral region together with the boundary of the second region. A wire connects the first electrode pad to the second electrode pad between two adjacent light emitting cells.
摘要翻译：本发明的示例性实施例涉及包括适于AC驱动的衬底上的多个发光单元的发光二极管。发光二极管包括基板和形成在基板上的多个发光单元。每个发光单元包括在发光单元的边界处的第一区域和与第一区域相对的第二区域。第一电极焊盘形成在发光单元的第一区域中。具有直线形状的第二电极焊盘设置成面对第一电极焊盘，同时区域地限定与第二区域的边界一起的周边区域。导线将第一电极焊盘连接到两个相邻的发光单元之间的第二电极焊盘。

3. 发明授权

US08680559B2 Light emitting diode having electrode extensions for current spreading 有权
标题翻译：具有用于电流扩展的电极延伸的发光二极管
公开(公告)号：US08680559B2
公开(公告)日：2014-03-25
申请号：US12941536
申请日：2010-11-08
申请人： Kyoung Wan Kim , Soo Young Moon , Kyu Ho Lee , Yeo Jin Yoon , Jeong Hee Yang , Won Cheol Seo
发明人： Kyoung Wan Kim , Soo Young Moon , Kyu Ho Lee , Yeo Jin Yoon , Jeong Hee Yang , Won Cheol Seo
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad. The first extensions include intrusion parts extending in a direction from the first edge to the second edge, wherein the intrusion parts are spaced apart from each other and not connecting with the second electrode pads. Further, the second extensions include intrusion parts extending in a direction from the second edge to the first edge, wherein the first extension intrusion parts each extend into a region between two of the second extension intrusion parts.
摘要翻译：本发明的一个示例性实施例公开了一种发光二极管，其包括具有彼此相对的第一边缘和第二边缘的基板，设置在基板上的发光结构，所述发光结构包括第一半导体层和第二半导体布置在第一半导体层的上表面上的多个第一电极焊盘，布置在第一边缘附近的第一电极焊盘，布置在第二半导体层上的多个第二电极焊盘，布置在第二半导体层上的第二电极焊盘在第二边缘附近，多个第一延伸部，每个第一延伸部从第一电极焊盘延伸，以及多个第二延伸部，每个第二延伸部从第二电极焊盘延伸。第一延伸部包括在从第一边缘到第二边缘的方向上延伸的侵入部分，其中入侵部分彼此间隔开并且不与第二电极焊盘连接。此外，第二延伸部包括在从第二边缘到第一边缘的方向上延伸的侵入部分，其中第一延伸入侵部分各自延伸到两个第二延伸入侵部分之间的区域中。

4. 发明申请

US20140008671A1 LIGHT EMITTING DEVICE HAVING VERTICALLY STACKED LIGHT EMITTING DIODES 审中-公开
标题翻译：具有垂直堆积的发光二极管的发光装置
公开(公告)号：US20140008671A1
公开(公告)日：2014-01-09
申请号：US14021437
申请日：2013-09-09
申请人： Seoul Opto Device Co., Ltd.
发明人： Sung Han KIM , Kyoung Hoon Kim
IPC分类号： H01L33/08
CPC分类号： H01L33/08 , H01L27/153
摘要： Exemplary embodiments of the present invention relate to a light emitting device including a first light emitting cell including a lower light emitting diode and an upper light emitting diode vertically stacked on a substrate and at least three electrodes arranged on the first light emitting cell. Each of the lower light emitting diode and the upper light emitting diode includes an active layer disposed between a lower semiconductor layer and an upper semiconductor layer, the lower semiconductor layer being disposed between the substrate and the upper semiconductor layer.
摘要翻译：本发明的示例性实施例涉及一种发光器件，其包括第一发光单元，其包括下部发光二极管和垂直堆叠在基板上的上部发光二极管和布置在第一发光单元上的至少三个电极。下部发光二极管和上部发光二极管中的每一个包括设置在下半导体层和上半导体层之间的有源层，下半导体层设置在基板和上半导体层之间。

5. 发明申请

US20130320301A1 LIGHT EMITTING DIODE HAVING PHOTONIC CRYSTAL STRUCTURE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有光子晶体结构的发光二极管及其制造方法
公开(公告)号：US20130320301A1
公开(公告)日：2013-12-05
申请号：US13984147
申请日：2012-01-17
申请人： Won Cheol Seo , Joo Won Choi
发明人： Won Cheol Seo , Joo Won Choi
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L2933/0083
摘要： Disclosed are a light emitting diode (LED) having a photonic crystal structure and a method of fabricating the same. An LED comprises a support substrate, a lower semiconductor layer positioned on the support substrate, an upper semiconductor layer positioned over the lower semiconductor layer, an active region positioned between the lower and upper semiconductor layers, and a photonic crystal structure embedded in the lower semiconductor layer. The photonic crystal structure may prevent the loss of the light advancing toward the support substrate and improve the light extraction efficiency.
摘要翻译：公开了具有光子晶体结构的发光二极管（LED）及其制造方法。 LED包括支撑衬底，位于支撑衬底上的下半导体层，位于下半导体层之上的上半导体层，位于下半导体层和上半导体层之间的有源区，以及嵌入在下半导体中的光子晶体结构层。光子晶体结构可以防止光朝着支撑基板前进的损失，并提高光提取效率。

6. 发明授权

US08564134B2 Semiconductor substrate, semiconductor device, and manufacturing methods thereof 有权
标题翻译：半导体衬底，半导体器件及其制造方法
公开(公告)号：US08564134B2
公开(公告)日：2013-10-22
申请号：US12875649
申请日：2010-09-03
申请人： Shiro Sakai
发明人： Shiro Sakai
IPC分类号： H01L23/52
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0265 , H01L21/02656 , H01L25/0753 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a method of manufacturing a gallium nitride (GaN) substrate on a heterogeneous substrate at low cost while realizing performance improvement and long operational lifespan of semiconductor devices, such as LEDs or laser diodes, which are manufactured using the GaN substrate. The semiconductor substrate includes a substrate, a first semiconductor layer arranged on the substrate, a mask arranged on a first region of the first semiconductor layer, a metallic material layer arranged on the first semiconductor layer and the mask, the metallic material layer being arranged in a direction intersecting the mask, a second semiconductor layer arranged on the first semiconductor layer and the metallic material layer, and a cavity in the first semiconductor layer and arranged under the metallic material layer.
摘要翻译：本发明提供了一种在异质衬底上以低成本制造氮化镓（GaN）衬底的方法，同时实现使用GaN衬底制造的诸如LED或激光二极管的半导体器件的性能改进和长使用寿命。半导体衬底包括衬底，布置在衬底上的第一半导体层，布置在第一半导体层的第一区域上的掩模，布置在第一半导体层和掩模上的金属材料层，金属材料层布置在与掩模相交的方向，配置在第一半导体层和金属材料层上的第二半导体层，以及配置在金属材料层的下方的第一半导体层的空腔。

7. 发明申请

US20130234192A1 LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD 有权
标题翻译：具有电极板的发光二极管芯片
公开(公告)号：US20130234192A1
公开(公告)日：2013-09-12
申请号：US13885777
申请日：2011-02-28
申请人： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
发明人： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
IPC分类号： H01L33/46
CPC分类号： H01L33/387 , H01L33/0008 , H01L33/10 , H01L33/20 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/60 , H01L2933/0016 , H01L2933/0066
摘要： Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
摘要翻译：本文公开了包括电极焊盘的LED芯片。 LED芯片包括：第一导电型半导体层，第一导电型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠; 位于与第一导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘; 从所述第一电极焊盘延伸并连接到所述第一导电型半导体层的第一电极延伸部; 电连接到第二导电类型半导体层的第二电极焊盘; 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。

8. 发明申请

US20130221324A1 SEMICONDUCTOR LIGHT EMITTING DIODE HAVING OHMIC ELECTRODE STRUCTURE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：具有OHMIC电极结构的半导体发光二极管及其制造方法
公开(公告)号：US20130221324A1
公开(公告)日：2013-08-29
申请号：US13816793
申请日：2011-08-09
申请人： Jong Lam Lee , Yang Hee Song
发明人： Jong Lam Lee , Yang Hee Song
IPC分类号： H01L33/40
CPC分类号： H01L33/40 , H01L33/0095 , H01L33/32 , H01L33/405 , H01L2933/0016
摘要： Embodiments of the invention provide a semiconductor light emitting diode having an ohmic electrode structure, and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting structure having an upper surface constituting an N-face; and an ohmic electrode structure located on the light emitting structure. Here, the ohmic electrode structure includes a lower diffusion preventing layer, a contact layer, an upper diffusion preventing layer, and an Al protective layer from the N-face of the light emitting structure.
摘要翻译：本发明的实施例提供一种具有欧姆电极结构的半导体发光二极管及其制造方法。半导体发光二极管包括具有构成N面的上表面的发光结构; 以及位于发光结构上的欧姆电极结构。这里，欧姆电极结构包括来自发光结构的N面的下扩散防止层，接触层，上扩散防止层和Al保护层。

9. 发明申请

US20130134867A1 LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY 有权
标题翻译：具有改进的光提取效率的发光二极管
公开(公告)号：US20130134867A1
公开(公告)日：2013-05-30
申请号：US13816572
申请日：2011-02-19
申请人： Jeong Hee Yang , Kyoung Wan Kim , Yeo Jin Yoon , Jae Moo Kim , Keum Ju Lee
发明人： Jeong Hee Yang , Kyoung Wan Kim , Yeo Jin Yoon , Jae Moo Kim , Keum Ju Lee
IPC分类号： H05B33/06
CPC分类号： H01L33/08 , H01L33/007 , H01L33/10 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/42 , H01L33/46 , H05B33/06
摘要： Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure which is positioned on a substrate and has a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer. A first electrode pad is electrically connected to the first conductive type semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second conductive type semiconductor layer. Further, a pattern of light extraction elements is positioned on the second conductive type semiconductor layer.
摘要翻译：公开了具有改进的光提取效率的发光二极管（LED）。 LED包括位于基板上并具有第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。第一电极焊盘电连接到第一导电类型半导体层。第二电极焊盘位于衬底上。绝缘反射层覆盖发光结构的一部分，并且位于第二电极焊盘下方，使得第二电极焊盘与发光结构间隔开。至少一个上延伸部连接到第二电极焊盘以与第二导电型半导体层电连接。此外，光提取元件的图案位于第二导电类型半导体层上。

10. 发明申请

US20130134386A1 LIGHT EMITTING DIODE HAVING STRAIN-ENHANCED WELL LAYER 有权
标题翻译：具有应变增强层的发光二极管
公开(公告)号：US20130134386A1
公开(公告)日：2013-05-30
申请号：US13484120
申请日：2012-05-30
申请人： Joo Won CHOI , Yoo Dae HAN , Jeong Hun HEO
发明人： Joo Won CHOI , Yoo Dae HAN , Jeong Hun HEO
IPC分类号： H01L33/04
CPC分类号： H01L33/04 , B82Y20/00 , B82Y99/00 , H01L33/06 , Y10S977/773
摘要： An exemplary embodiment of the present invention includes a light emitting diode including a strain-enhanced well layer. The light emitting diode includes an n-contact layer, an active layer having a barrier layer and a well layer, a p-contact layer, and a strain-enhancing layer configured to enhance a strain applied to the well layer.
摘要翻译：本发明的示例性实施例包括包括应变增强阱层的发光二极管。发光二极管包括n接触层，具有阻挡层和阱层的有源层，p接触层和构造为增强施加到阱层的应变的应变增强层。

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