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    • 9. 发明授权
    • Adjustable Schmitt trigger
    • 可调施密特触发器
    • US08502564B2
    • 2013-08-06
    • US13192690
    • 2011-07-28
    • Donald G. Mikan, Jr.
    • Donald G. Mikan, Jr.
    • H03K19/20H03K19/094
    • H03K3/3565
    • A circuit comprises an inverter, a first transistor, a second transistor, and at least one switching circuit. The inverter has a first node and a second node. The first transistor has a first terminal, a second terminal, and a third terminal. The second transistor has a fourth terminal, a fifth terminal, and a sixth terminal. The at least one switching circuit is configured to switch a connection of at least one of the first transistor and the second transistor to the inverter. The second terminal and the fifth terminal are coupled to the first node. The third terminal and the sixth terminal are coupled to the second node. The first transistor and the second transistor are configured to cause a plurality of time delays at the second node.
    • 电路包括反相器,第一晶体管,第二晶体管和至少一个开关电路。 逆变器具有第一节点和第二节点。 第一晶体管具有第一端子,第二端子和第三端子。 第二晶体管具有第四端子,第五端子和第六端子。 至少一个开关电路被配置为将第一晶体管和第二晶体管中的至少一个的连接切换到逆变器。 第二终端和第五终端耦合到第一节点。 第三终端和第六终端耦合到第二节点。 第一晶体管和第二晶体管被配置为在第二节点处引起多个时间延迟。
    • 10. 发明授权
    • Method for manufacturing thin film transistor (TFT) array substrate
    • 制造薄膜晶体管(TFT)阵列基板的方法
    • US08501553B2
    • 2013-08-06
    • US13527983
    • 2012-06-20
    • Hsien Tang HuChien Chih HsiaoChih Hung Tsai
    • Hsien Tang HuChien Chih HsiaoChih Hung Tsai
    • H01L21/84H01L21/00
    • H01L29/4908H01L27/124H01L29/458
    • A TFT array substrate includes a substrate, at least one gate line and gate electrode, a gate insulating layer, and at least one channel component, source electrode, drain electrode and data line. The gate line and gate electrode are disposed on the substrate, wherein both of the gate line and gate electrode have first and second conductive layers, the first conductive layer is formed on the substrate, the first conductive layer contains molybdenum nitride , the second conductive layer is formed on the first conductive layer, and the second conductive layer contains copper. The gate insulating layer is disposed on the gate line, gate electrode and the substrate. The channel component is disposed on the gate insulating layer. The source electrode and drain electrode are disposed on the channel component, and data line is disposed on the gate insulating layer.
    • TFT阵列基板包括基板,至少一个栅极线和栅极电极,栅极绝缘层以及至少一个沟道部件,源电极,漏电极和数据线。 栅极线和栅电极设置在基板上,其中栅极线和栅电极都具有第一和第二导电层,第一导电层形成在基板上,第一导电层含有氮化钼,第二导电层 形成在第一导电层上,第二导电层含有铜。 栅极绝缘层设置在栅极线,栅电极和基板上。 沟道部件设置在栅极绝缘层上。 源电极和漏极设置在沟道部件上,并且数据线设置在栅极绝缘层上。