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1. 发明申请

US20210408889A1 Multibridge Power Converter With Multiple Outputs 有权
公开(公告)号：US20210408889A1
公开(公告)日：2021-12-30
申请号：US17272233
申请日：2020-10-16
申请人： Huibin Zhu , Karen Ming Zhu
发明人： Huibin Zhu , Karen Ming Zhu
IPC分类号： H02M1/00 , H02J7/06 , H02M1/44 , H02M3/335 , H02M7/797 , H02P27/08 , H02M1/42 , B60L53/22
摘要： According to one aspect of the present disclosure, there is provided a power converter apparatus that includes at least two switching bridges connected to a Direct Current (DC) bus and both generating pulse-width-modulated (PWM) voltages to non-isolated outputs, and an isolation transformer having a primary winding connected across the outputs of the two switching bridges and a secondary winding connected to isolated outputs. In a non-isolated mode, the two switching bridges are configured to operate in a parallel mode, and power is transferred between the DC bus and the non-isolated outputs. In an isolated mode, the two switching bridges are configured to operate in a full bridge mode, and power is transferred between the DC bus and the isolated outputs through the transformer.

2. 发明申请

US20180043512A1 RATCHET WRENCH PROVIDING COMBINED FUNCTIONS OF ORDINARY RATCHET WRENCHES 审中-公开
公开(公告)号：US20180043512A1
公开(公告)日：2018-02-15
申请号：US15789986
申请日：2017-10-21
申请人： Ming Liang Zhang , Ming Zhu Zhang
发明人： Ming Liang Zhang , Ming Zhu Zhang
IPC分类号： B25B13/46 , B25B17/00
CPC分类号： B25B13/467 , B25B13/463 , B25B13/481 , B25B17/00
摘要： A ratchet wrench includes a first and a second drive members 21, 21′ rotatably mounted in a first and a second heads 16, 16′ extended from a first and a second ends of a handle 10. The first drive member 21 includes a square inner periphery 35 adapted to slidably retain a drive shaft 36 including a ½″ drive fitting 45 and a ⅜″ drive fitting 46, and the second drive member 21′ includes a ¼″ drive hexagonal bit holder 53 and ¼″ drive fitting 54, for providing combined functions of ordinary ratchet wrenches for turning fasteners. A first and a second ratcheting mechanisms are mounted in the first and the second ends of the handle 10 for turning the first and the second drive members 21, 21′, by the handle 10.

3. 发明授权

US09865716B2 System and method for a vertical tunneling field-effect transistor cell 有权
公开(公告)号：US09865716B2
公开(公告)日：2018-01-09
申请号：US13594289
申请日：2012-08-24
申请人： Harry Hak-Lay Chuang , Ming Zhu
发明人： Harry Hak-Lay Chuang , Ming Zhu
IPC分类号： H01L29/788 , H01L29/739 , H01L21/8234 , H01L29/423 , H01L29/06 , H01L21/8238 , H01L27/092
CPC分类号： H01L29/7391 , H01L21/823418 , H01L21/823885 , H01L27/092 , H01L29/0657 , H01L29/42356 , H01L29/4238 , H01L29/7889
摘要： A semiconductor device cell is disclosed. The semiconductor device cell includes a transistor gate having a gating surface and a contacting surface and a source region contacted by a source contact. The semiconductor device cell further includes a drain region contacted by a drain contact, wherein the drain contact is not situated opposite the source contact with respect to the gating surface of the transistor gate. Additional semiconductor device cells in which the gate contact is closer to the source contact than to the drain contact are disclosed.

4. 发明申请

US20160085600A1 Packaging Application Data and Logic for Offline Support 有权
标题翻译：包装用于离线支持的应用数据和逻辑
公开(公告)号：US20160085600A1
公开(公告)日：2016-03-24
申请号：US14494457
申请日：2014-09-23
申请人： Mario Linge , Ananda Kumar Gajula , Jianxun Zhou , Oscar Marquez , Xiaojun Feng , Yang-cheng Fan , Ming Zhu , Paul Xi , Marco Eidinger , Mohamed Elzankaly
发明人： Mario Linge , Ananda Kumar Gajula , Jianxun Zhou , Oscar Marquez , Xiaojun Feng , Yang-cheng Fan , Ming Zhu , Paul Xi , Marco Eidinger , Mohamed Elzankaly
IPC分类号： G06F9/54
CPC分类号： G06F9/542
摘要： A technique is described providing offline support to business applications. Offline support allows a business application running on a portable electronic device without connectivity to a backend server to operate as though the business application has access to a backend server. The technique receives a client request to operate the application in an offline mode. The technique then retrieves a business object to be utilized in the offline mode and an event trigger for interacting with the business object. The native programming language is then determined and then an event handler written in a native language of the client device and that is associated with the event trigger is retrieved. The event trigger is then modified to point to the event handler. The business object, event trigger, and event handler are then packaged together.
摘要翻译：描述了一种提供对业务应用程序的离线支持的技术。离线支持允许在便携式电子设备上运行的业务应用程序，而无需连接到后端服务器，就像业务应用程序可以访问后端服务器一样进行操作。该技术接收客户端请求以在离线模式下操作应用程序。然后，该技术检索要在离线模式中使用的业务对象和用于与业务对象交互的事件触发器。然后确定本地编程语言，然后检索用客户端设备的本机语言编写并与事件触发相关联的事件处理程序。然后将事件触发器修改为指向事件处理程序。然后将业务对象，事件触发器和事件处理程序打包在一起。

5. 发明授权

US09177870B2 Enhanced gate replacement process for high-K metal gate technology 有权
标题翻译：用于高K金属栅极技术的增强栅极替换工艺
公开(公告)号：US09177870B2
公开(公告)日：2015-11-03
申请号：US13328382
申请日：2011-12-16
申请人： Hak-Lay Chuang , Ming Zhu
发明人： Hak-Lay Chuang , Ming Zhu
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L21/8238
CPC分类号： H01L29/66545 , H01L21/02186 , H01L21/02192 , H01L21/3212 , H01L21/823842 , H01L21/823857
摘要： The present disclosure provides a method of fabricating a semiconductor device. A high-k dielectric layer is formed over a substrate. A first capping layer is formed over a portion of the high-k dielectric layer. A second capping layer is formed over the first capping layer and the high-k dielectric layer. A dummy gate electrode layer is formed over the second capping layer. The dummy gate electrode layer, the second capping layer, the first capping layer, and the high-k dielectric layer are patterned to form an NMOS gate and a PMOS gate. The NMOS gate includes the first capping layer, and the PMOS gate is free of the first capping layer. The dummy gate electrode layer of the PMOS gate is removed, thereby exposing the second capping layer of the PMOS gate. The second capping layer of the PMOS gate is transformed into a third capping layer.
摘要翻译：本公开提供了制造半导体器件的方法。在衬底上形成高k电介质层。在高k电介质层的一部分上形成第一覆盖层。在第一覆盖层和高k电介质层上形成第二覆盖层。在第二盖层上形成虚拟栅电极层。对虚拟栅极电极层，第二覆盖层，第一覆盖层和高k电介质层进行构图以形成NMOS栅极和PMOS栅极。 NMOS栅极包括第一覆盖层，PMOS栅极不含第一覆盖层。去除PMOS栅极的伪栅极电极层，从而暴露PMOS栅极的第二覆盖层。 PMOS栅极的第二覆盖层被转换成第三覆盖层。

6. 发明申请

US20150296010A1 Asynchronous Download for Application Offline Support 有权
标题翻译：异步下载为应用程序脱机支持
公开(公告)号：US20150296010A1
公开(公告)日：2015-10-15
申请号：US14249229
申请日：2014-04-09
申请人： Paul Xi , Ming Zhu , Xiaojun Feng , Mohamed Elzankaly , Marco Eidinger , Ananda Kumar Gajula , Mario Linge , Yang-cheng Fan , Oscar Marquez , Jianxun Zhou
发明人： Paul Xi , Ming Zhu , Xiaojun Feng , Mohamed Elzankaly , Marco Eidinger , Ananda Kumar Gajula , Mario Linge , Yang-cheng Fan , Oscar Marquez , Jianxun Zhou
IPC分类号： H04L29/08
CPC分类号： H04L67/1095 , H04L67/04 , H04L67/2861 , H04L67/32 , H04L69/24
摘要： A technique is described providing offline support to business applications. Offline support allows a business application running on a portable electronic device without connectivity to a backend server to operate as though the business application has access to a backend server. The technique receives a sync request for content from the portable electronic device. A sync task is generated from the sync requests and processed to generate a package that contains the desired content. Once the package is generated, the package is stored in a package repository and a download notification is transmitted to the portable electronic device to notify the user that the package is ready. The package can in turn be delivered to the portable electronic device when a download request is received from the portable electronic device.
摘要翻译：描述了一种提供对业务应用程序的离线支持的技术。离线支持允许在便携式电子设备上运行的业务应用程序，而无需连接到后端服务器，就像业务应用程序可以访问后端服务器一样进行操作。该技术从便携式电子设备接收对内容的同步请求。同步任务是从同步请求生成的，并被处理以生成包含所需内容的包。一旦产生包装，该包就被存储在包储存库中，并且下载通知被传送到便携式电子设备以通知用户该包是否准备就绪。当从便携式电子设备接收到下载请求时，该包可依次被传送到便携式电子设备。

7. 发明授权

US09142414B2 CMOS devices with metal gates and methods for forming the same 有权
标题翻译：具有金属栅极的CMOS器件及其形成方法
公开(公告)号：US09142414B2
公开(公告)日：2015-09-22
申请号：US13331214
申请日：2011-12-20
申请人： Sheng-Chen Chung , Ming Zhu , Harry-Hak-Lay Chuang , Bao-Ru Young , Wei-Cheng Wu , Chia Ming Liang , Sin-Hua Wu
发明人： Sheng-Chen Chung , Ming Zhu , Harry-Hak-Lay Chuang , Bao-Ru Young , Wei-Cheng Wu , Chia Ming Liang , Sin-Hua Wu
IPC分类号： H01L21/28 , H01L21/8238 , H01L29/49 , H01L29/51 , H01L29/66 , H01L29/78
CPC分类号： H01L21/28088 , H01L21/823807 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/665 , H01L29/66545 , H01L29/6659 , H01L29/7833 , H01L29/7843 , H01L29/7848
摘要： A method includes forming a PMOS device. The method includes forming a gate dielectric layer over a semiconductor substrate and in a PMOS region, forming a first metal-containing layer over the gate dielectric layer and in the PMOS region, performing a treatment on the first metal-containing layer in the PMOS region using an oxygen-containing process gas, and forming a second metal-containing layer over the first metal-containing layer and in the PMOS region. The second metal-containing layer has a work function lower than a mid-gap work function of silicon. The first metal-containing layer and the second metal-containing layer form a gate of the PMOS device.
摘要翻译：一种方法包括形成PMOS器件。该方法包括在半导体衬底和PMOS区域上形成栅极电介质层，在栅极电介质层和PMOS区域上形成第一含金属层，对PMOS区域中的第一含金属层进行处理使用含氧处理气体，并在第一含金属层和PMOS区域上形成第二含金属层。第二含金属层具有低于硅的中间间隙功函数的功函数。第一含金属层和第二含金属层形成PMOS器件的栅极。

8. 发明授权

US08971986B2 Multi-modality medical image viewing 有权
标题翻译：多模态医学图像观看
公开(公告)号：US08971986B2
公开(公告)日：2015-03-03
申请号：US13593552
申请日：2012-08-24
申请人： Yang-Ming Zhu , Xiangyu Wu , Charles A. Nortmann , Ronald W. Sukalac , Steven M. Cochoff , L. Alan Love , Richard Cheng-Hsiu Chen , Chris A. Dauterman , Madhavi Ahuja , Dawn M. Maniawski
发明人： Yang-Ming Zhu , Xiangyu Wu , Charles A. Nortmann , Ronald W. Sukalac , Steven M. Cochoff , L. Alan Love , Richard Cheng-Hsiu Chen , Chris A. Dauterman , Madhavi Ahuja , Dawn M. Maniawski
IPC分类号： A61B5/05 , G06F19/00
CPC分类号： G16H30/20 , A61B5/05 , A61B6/463 , G06F17/30899 , G06F17/30905 , G06F19/00 , G06F19/321 , G06T2200/24 , G16H30/00 , G16H30/40 , G16H40/63
摘要： A medical imaging system (10) comprises one or more displays (66). A viewer device (86) generates an interactive user interface screen (80) on the display (66), which viewer device (86) enables a user to simultaneously inspect selected image data of multiple patients or multiple images.
摘要翻译：医疗成像系统（10）包括一个或多个显示器（66）。观看者设备（86）在显示器（66）上生成交互式用户界面屏幕（80），该观看者设备（86）使得用户能够同时检查多个患者或多个图像的所选图像数据。

9. 发明申请

US20150019156A1 Multi-Node Synchronous On-Site Test Method 有权
标题翻译：多节点同步现场测试方法
公开(公告)号：US20150019156A1
公开(公告)日：2015-01-15
申请号：US14378954
申请日：2012-05-02
申请人： Maolin Pei , Ping Sun , Chunqiang Zhang , Jian Liu , Haimei Hu , Ming Zhu
发明人： Maolin Pei , Ping Sun , Chunqiang Zhang , Jian Liu , Haimei Hu , Ming Zhu
IPC分类号： G01R31/40 , G01R21/133
CPC分类号： G01R31/40 , G01R21/133 , H02J13/0079
摘要： A multi-node synchronous on-site test method, the method comprising: using GPS time as time reference, and conducting synchronous on-site tests on the devices to be tested and systems distributed at different places at an appointed time; controlling the synchronous phase control simulation devices distributed at multiple nodes via a synchronous test control center; within a uniform time section, synchronously outputting secondary side AC simulation signals, and simulating various actual operating conditions, thus achieving the detection of the monitoring and control performances of various dynamic monitoring and control systems, and ensuring the normal functions of the systems. The method of the present invention is able to conduct multi-node dynamic simulation test with synchronized GPS time, and achieves the detection of large-area multi-node monitoring and control systems. The present invention is suitable for the test of a wide area measurement system (WAMS) function, the simulation test of a damping control function, the simulation test of transiently stable state analysis and control functions, the simulation test of voltage stabilization and control functions, the simulation test of an islanding control function, the simulation test of wide area protection system functions and the like.
摘要翻译：一种多节点同步现场测试方法，该方法包括：使用GPS时间作为时间参考，并对被测设备进行同步现场测试，并在指定时间内在不同地点分配系统; 通过同步测试控制中心控制分布在多个节点的同步相位控制仿真设备; 在均匀时间段内同步输出二次侧交流仿真信号，模拟各种实际运行状况，实现对各种动态监控系统的监控性能的检测，确保系统的正常功能。本发明的方法能够进行同步GPS时间的多节点动态模拟测试，实现了大面积多节点监控系统的检测。本发明适用于广域测量系统（WAMS）功能的测试，阻尼控制功能的仿真测试，瞬态稳态分析和控制功能的仿真测试，稳压控制功能的仿真测试，孤岛控制功能的仿真测试，广域保护系统功能的仿真测试等。

10. 发明授权

US08889501B2 Methods for forming MOS devices with raised source/drain regions 有权
标题翻译：用于形成具有升高的源极/漏极区域的MOS器件的方法
公开(公告)号：US08889501B2
公开(公告)日：2014-11-18
申请号：US13486240
申请日：2012-06-01
申请人： Harry-Hak-Lay Chuang , Sin-Hua Wu , Chung-Hau Fei , Ming Zhu , Bao-Ru Young , Yen-Ru Lee , Chii-Horng Li , Tze-Liang Lee
发明人： Harry-Hak-Lay Chuang , Sin-Hua Wu , Chung-Hau Fei , Ming Zhu , Bao-Ru Young , Yen-Ru Lee , Chii-Horng Li , Tze-Liang Lee
IPC分类号： H01L21/336 , H01L21/8238 , H01L27/11
CPC分类号： H01L27/1116 , H01L21/823807 , H01L21/823814
摘要： A method includes forming a first gate stack of a first device over a semiconductor substrate, and forming a second gate stack of a second MOS device over the semiconductor substrate. A first epitaxy is performed to form a source/drain stressor for the second MOS device, wherein the source/drain stressor is adjacent to the second gate stack. A second epitaxy is performed to form a first silicon layer and a second silicon layer simultaneously, wherein the first silicon layer is over a first portion of the semiconductor substrate, and is adjacent the first gate stack. The second silicon layer overlaps the source/drain stressor.
摘要翻译：一种方法包括在半导体衬底上形成第一器件的第一栅极堆叠，以及在半导体衬底上形成第二MOS器件的第二栅极堆叠。执行第一外延以形成用于第二MOS器件的源/漏应力源，其中源极/漏极应力器与第二栅极堆叠相邻。执行第二外延以同时形成第一硅层和第二硅层，其中第一硅层位于半导体衬底的第一部分之上并且与第一栅极堆叠相邻。第二硅层与源极/漏极应力源重叠。

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