专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20170123322A1 METHOD FOR CALCULATING THE METRICS OF AN IC MANUFACTURING PROCESS 有权
公开(公告)号：US20170123322A1
公开(公告)日：2017-05-04
申请号：US15310709
申请日：2015-06-02
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , ASELTA NANOGRAPHICS
发明人： Mohamed SAÏB , Aurélien FAY , Patrick SCHIAVONE , Thiago FIGUEIRO
IPC分类号： G03F7/20 , G06F17/50
摘要： A method for calculating the parameters of a resist model of an IC manufacturing process is provided. Accordingly, a function representative of the target design convoluted throughout the whole target design with a kernel function compounded with a deformation function with a shift angle. The deformation function is replaced by its Fourier series development, the order of which is selected so that the product of convolution is invariant through rotations within a tolerance of the corrections to be applied to the target design. Alternatively, the product of convolution may be decomposed into basic kernel functions selected varying by angles determined so that a deformation function for a value of the shift angle can be projected onto a couple of basic kernel functions the angles of which are proximate to the shift angle.

2. 发明申请

US20170097571A1 METHOD OF REDUCING SHOT COUNT IN DIRECT WRITING BY A PARTICLE OR PHOTON BEAM 审中-公开
公开(公告)号：US20170097571A1
公开(公告)日：2017-04-06
申请号：US15286260
申请日：2016-10-05
申请人： ASELTA NANOGRAPHICS
发明人： Luc MARTIN , Thomas QUAGLIO , Matthieu MILLEQUANT , Clyde BROWNING , Serdar MANAKLI
IPC分类号： G03F7/20
CPC分类号： G03F1/78 , G03F7/70383 , G03F7/70433 , G03F7/70441 , G03F7/70491 , G03F7/705 , H01J37/3026 , H01J37/3174 , H01J37/3178 , H01J2237/3175
摘要： A method for transferring a fractured pattern decomposed into elementary shapes, onto a substrate by direct writing by a particle or photon beam, comprises a step of identifying at least one elementary shape of the fractured pattern, called removable elementary shape, whose removal induces modifications of the transferred pattern within a preset tolerance envelope; a step of removing the removable shape or shapes from the fractured pattern to obtain a modified fractured pattern; and an exposure step, comprising exposing the substrate to a plurality of shots of a shaped particle or photon beam, each shot corresponding to an elementary shape of the modified fractured pattern. A computer program product for carrying out such a method is provided.

3. 发明授权

US10295912B2 Method for determining the parameters of an IC manufacturing process model 有权
公开(公告)号：US10295912B2
公开(公告)日：2019-05-21
申请号：US15327330
申请日：2015-07-30
申请人： ASELTA NANOGRAPHICS
发明人： Mohamed Saib , Patrick Schiavone , Thiago Figueiro
IPC分类号： G03F7/20 , G03F1/36 , H01J37/317 , H01J37/302 , G03F1/26
摘要： An IC manufacturing model is disclosed, wherein input variables and an output variable are measured using a calibration set of patterns. The model can or cannot include a PSF. The output variable may be a dimensional bias between printed patterns and target patterns or simulated patterns. It can also be a Threshold To Meet Experiments. The input variables may be defined by a metric which uses kernel functions, preferably with a deformation function which includes a shift angle and a convolution procedure. A functional or associative relationship between the input variables and the output variable is defined. Preferably this definition includes normalization steps and interpolation steps. Advantageously, the interpolation step is of the kriging type. The invention achieves a much more accurate modeling of IC manufacturing, simulation or inspection processes.

4. 发明授权

US09430597B2 Method for estimating patterns to be printed on a plate or mask by means of electron-beam lithography and corresponding printing device 有权
标题翻译：用于通过电子束光刻法和对应的印刷装置估计印刷在印版或掩模上的图案的方法
公开(公告)号：US09430597B2
公开(公告)日：2016-08-30
申请号：US14100484
申请日：2013-12-09
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT , ASELTA NANOGRAPHICS
发明人： Jerome Belledent
IPC分类号： G06F19/00 , G06F17/50 , G03F7/20 , H01J37/317 , G03F1/82
CPC分类号： G06F17/5045 , G03F1/82 , G03F7/2061 , G03F7/70441 , G03F7/70491 , H01J37/3174 , H01J2237/31754 , H01J2237/31769
摘要： This method for estimating patterns (M′PF,D′PF) to be printed by means of electron-beam lithography, comprises the following steps: printing (100), in a resin, a set of calibration patterns (MCF, DCF); measuring (120) characteristic dimensions (CD) of this set; supplying an estimation (140) of the point spread function (PSF) based on the characteristic dimensions (CD) measured; estimating (160) the patterns (M′PF,D′PF) to be printed by convoluting the point spread function (PSF) supplied with an initial value of the patterns (MPF,DPF).Furthermore, each calibration pattern printed includes a central zone exposed to the electron beam and a plurality of surrounding concentric zones with rotational symmetry. The characteristic dimensions measured are characteristic dimensions (CD) of the central zones of the patterns. The estimation of the point spread function (PSF) is calculated by inverting analytical modelling of the effect, on these characteristic dimensions, of applying the first point spread function portion (PSFBE) characterising electrons back-scattered by the substrate to the set of calibration patterns (MCF, DCF).
摘要翻译：用于估计通过电子束光刻印刷的图案（M'PF，D'PF）的方法包括以下步骤：在树脂中印刷（100）一组校准图案（MCF，DCF）; 测量（120）该组的特征尺寸（CD）; 基于测量的特征尺寸（CD）提供点扩散函数（PSF）的估计（140）; 通过对提供有模式（MPF，DPF）的初始值的点扩散函数（PSF）进行卷积来估计（160）要打印的图案（M'PF，D'PF）。此外，印刷的每个校准图案包括暴露于电子束的中心区域和具有旋转对称性的多个周围的同心区域。测量的特征尺寸是图案的中心区域的特征尺寸（CD）。通过将表征由衬底反向散射的电子的第一点扩散函数部分（PSFBE）应用于该组校准图案来反映点扩散函数（PSF）的估计，通过反映对这些特征尺寸的影响的分析建模，（MCF，DCF）。

5. 发明申请

US20130275098A1 METHOD OF CORRECTING ELECTRON PROXIMITY EFFECTS USING VOIGT TYPE SCATTERING FUNCTIONS 有权
标题翻译：使用VOIGT类型散射函数校正电子近似效应的方法
公开(公告)号：US20130275098A1
公开(公告)日：2013-10-17
申请号：US13861284
申请日：2013-04-11
申请人： ASELTA NANOGRAPHICS
发明人： Jean-Herve TORTAI , Patrick SCHIAVONE , Thiago FIGUEIRO , Nader JEDIDI
IPC分类号： G06F17/50
CPC分类号： G06F17/5009 , B82Y10/00 , B82Y40/00 , G03F7/2059 , H01J37/222 , H01J37/3174 , H01J2237/226 , H01J2237/31769
摘要： A method for projecting an electron beam used notably in lithography by direct or indirect writing as well as in electron microscopy, is provided. Notably for critical dimensions or resolutions of less than 50 nm, the proximity effects created by the forward and backward scattering of the electrons of the beam in interaction with the target must be corrected. This is traditionally done using the convolution of a point spread function with the geometry of the target. In the prior art, said point spread function uses Gaussian distribution laws. At least one of the components of the point spread function is a linear combination of Voigt functions and/or of functions approximating Voigt functions, such as the Pearson VII functions. In certain embodiments, some of the functions are centered on the backward scattering peaks of the radiation.
摘要翻译：提供了一种用于通过直接或间接书写以及电子显微镜投射用于光刻中的电子束的方法。值得注意的是，对于小于50nm的关键尺寸或分辨率，必须校正与目标相互作用的光束的电子的向前和向后散射产生的邻近效应。传统上使用点扩散函数与目标几何的卷积完成。在现有技术中，所述点扩散函数使用高斯分布规律。点扩散函数的分量中的至少一个是Voigt函数和/或接近Voigt函数的函数的线性组合，例如Pearson VII函数。在某些实施例中，一些功能以辐射的向后散射峰为中心。

6. 发明授权

US10423074B2 Method for calculating the metrics of an IC manufacturing process 有权
公开(公告)号：US10423074B2
公开(公告)日：2019-09-24
申请号：US15310709
申请日：2015-06-02
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , ASELTA NANOGRAPHICS
发明人： Mohamed Saïb , Aurélien Fay , Patrick Schiavone , Thiago Figueiro
IPC分类号： G06F17/50 , G03F7/20 , G03F1/36 , G03F1/80 , H01J37/317
摘要： A method for calculating the parameters of a resist model of an IC manufacturing process is provided. Accordingly, a function representative of the target design convoluted throughout the whole target design with a kernel function compounded with a deformation function with a shift angle. The deformation function is replaced by its Fourier series development, the order of which is selected so that the product of convolution is invariant through rotations within a tolerance of the corrections to be applied to the target design. Alternatively, the product of convolution may be decomposed into basic kernel functions selected varying by angles determined so that a deformation function for a value of the shift angle can be projected onto a couple of basic kernel functions the angles of which are proximate to the shift angle.

7. 发明授权

US10197909B2 Method of reducing shot count in direct writing by a particle or photon beam 有权
公开(公告)号：US10197909B2
公开(公告)日：2019-02-05
申请号：US15286260
申请日：2016-10-05
申请人： ASELTA NANOGRAPHICS
发明人： Luc Martin , Thomas Quaglio , Matthieu Millequant , Clyde Browning , Serdar Manakli
IPC分类号： G03B27/42 , G03F1/78 , G03F7/20 , H01J37/302 , H01J37/317
摘要： A method for transferring a fractured pattern decomposed into elementary shapes, onto a substrate by direct writing by a particle or photon beam, comprises a step of identifying at least one elementary shape of the fractured pattern, called removable elementary shape, whose removal induces modifications of the transferred pattern within a preset tolerance envelope; a step of removing the removable shape or shapes from the fractured pattern to obtain a modified fractured pattern; and an exposure step, comprising exposing the substrate to a plurality of shots of a shaped particle or photon beam, each shot corresponding to an elementary shape of the modified fractured pattern. A computer program product for carrying out such a method is provided.

8. 发明授权

US10157728B2 Lithography method with combined optimization of the radiated energy and of the geometry applicable to complex shapes 有权
公开(公告)号：US10157728B2
公开(公告)日：2018-12-18
申请号：US14783756
申请日：2014-04-17
申请人： ASELTA NANOGRAPHICS
发明人： Charles Tiphine , Sébastien Bayle
IPC分类号： H01J37/302 , H01J37/317 , B82Y10/00 , B82Y40/00 , H01J37/305
摘要： A method of generating data relative to the writing of a pattern by electronic radiation initially includes the provision of a pattern to be formed which form the work pattern with a single external envelope. The work pattern is broken down into a set of elementary outlines, each including a single external envelope. A set of insolation conditions is defined to model each elementary outline. An irradiated simulation pattern is calculated from the sets of insolation conditions associated with the sets of elementary outlines. The simulation pattern is compared with the pattern to be formed. If the simulation pattern is not representative of the pattern to be formed, shift vectors are calculated. The shift vectors are representative of different intervals existing between the two patterns. The external envelope of the pattern to be formed is modified from displacement vectors determined from the shift vectors. A new iteration is carried out.

9. 发明授权

US10156796B2 Method for determining the parameters of an IC manufacturing process by a differential procedure 有权
公开(公告)号：US10156796B2
公开(公告)日：2018-12-18
申请号：US15310731
申请日：2015-06-03
申请人： ASELTA NANOGRAPHICS
发明人： Mohamed Saïb , Patrick Schiavone , Thiago Figueiro
IPC分类号： G06F17/50 , G03F7/20
摘要： A method to easily determine parameters of a second process for manufacturing from parameters of a first process is provided. Metrics representative of differences between the first process and the second process are computed from a number of values of the parameters, which can be measured for the first process and the second process on a calibration layout, or which can be determined from pre-existing values for layouts or reference data for the first process and the second process by an interpolation/extrapolation procedure. A set of metrics are selected so that their combination gives a precise representation of the differences between the first process and the second process in all areas of a target design. Advantageously, the metrics are calculated as a product of convolution of the target design and a compound of a kernel function and a deformation function.

10. 发明授权

US10553394B2 Method for the correction of electron proximity effects 有权
公开(公告)号：US10553394B2
公开(公告)日：2020-02-04
申请号：US14915288
申请日：2014-08-28
申请人： ASELTA NANOGRAPHICS
发明人： Nader Jedidi , Patrick Schiavone , Jean-Hervé Tortai , Thiago Figueiro
IPC分类号： H01J37/304 , H01J37/285 , H01J37/317
摘要： A method for projecting an electron beam onto a target includes correction of the scattering effects of the electrons in the target. This correction is made possible by a calculation step of a point spread function having a radial variation according to a piecewise polynomial function.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式