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1. 发明授权

US12073541B2 Methods for high-performance electron microscopy 有权
公开(公告)号：US12073541B2
公开(公告)日：2024-08-27
申请号：US17633133
申请日：2020-08-10
申请人： THE BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM
发明人： Zbyszek Otwinowski , Raquel Bromberg , Dominika Borek
IPC分类号： G06T5/80 , H01J37/22
CPC分类号： G06T5/80 , H01J37/222 , G06T2207/10061 , H01J2237/223 , H01J2237/2826
摘要： Methods for correcting one or more image aberrations in an electron microscopy image, including cryo-EM images, are provided. The method includes obtaining a plurality of electron microscope (EM) images of an internal reference grid sample having one or more known properties, the plurality of electron microscope images obtained for a plurality of optical conditions and for a plurality of coordinated beam-image shifts. The method may also include, among other features, determining an aberration correction function that predicts aberrations for every point in the imaged area using kernel canonical correlation analysis (KCCA).

2. 发明公开

US20240249909A1 FILLING EMPTY STRUCTURES BY DEPOSITION UNDER SEM - BALANCING PARAMETERS BY GAS FLOW CONTROL 审中-公开
公开(公告)号：US20240249909A1
公开(公告)日：2024-07-25
申请号：US18099169
申请日：2023-01-19
申请人： Applied Materials Israel Ltd.
发明人： Yehuda Zur , Konstantin Chirko
IPC分类号： H01J37/28 , H01J37/20 , H01J37/22 , H01J37/305
CPC分类号： H01J37/28 , H01J37/20 , H01J37/222 , H01J37/3056 , H01J2237/31749
摘要： A method of evaluating, with an evaluation tool that includes a first charged particle column, a region of interest on a sample that includes an array of holes separated by solid portions, the method comprising: positioning the sample such that the region of interest is under a field of view of the first charged particle column; and locally depositing material within the array of holes in the region of interest by: pulsing a flow of deposition gas to the region of interest by turning the flow of the deposition gas ON and then OFF; thereafter, scanning a charged particle beam generated by the first charged particle column across the region of interest; and iteratively repeating the pulsing and scanning steps a plurality of times to locally deposit material within the array of holes in the region of interest.

3. 发明授权

US12046445B2 Electron beam inspection apparatus and electron beam inspection method 有权
公开(公告)号：US12046445B2
公开(公告)日：2024-07-23
申请号：US17625501
申请日：2020-06-29
申请人： NuFlare Technology, Inc.
发明人： Takuro Nagao
IPC分类号： H01J37/22 , G06T3/40 , G06T7/00 , H01J37/28
CPC分类号： H01J37/222 , G06T3/40 , G06T7/001 , H01J37/28 , G06T2207/10061 , G06T2207/30148
摘要： An electron beam inspection apparatus according to one aspect of the present invention includes an image acquisition mechanism to acquire a secondary electron image by scanning a substrate, on which a figure pattern is formed, with an electron beam, and detecting a secondary electron emitted due to irradiation with the electron beam by the scanning, a resize processing unit to perform, using design pattern data being a basis of the figure pattern, resize processing on the figure pattern to enlarge its size in a scan direction of the electron beam, a first developed image generation unit to generate, using the design pattern data which has not been resized, a first developed image by developing an image of a design pattern of a region corresponding to the secondary electron image, a second developed image generation unit to generate, using partial patterns enlarged by the resize processing in the figure pattern having been resized, a second developed image by developing an image of partial patterns in a region corresponding to the secondary electron image, a map generation unit to generate a pseudo defect candidate pixel map which can identify a pseudo defect candidate pixel that has no pattern in the first developed image and has a pattern in the second developed image, a reference image generation unit to generate a reference image of the region corresponding to the second electron image, and a comparison unit to compare, using the pseudo defect candidate pixel map, the second electron image with the reference image of the region corresponding to the second electron image.

4. 发明公开

US20240222064A1 Processor System, Correction Method, and Correction Program 审中-公开
公开(公告)号：US20240222064A1
公开(公告)日：2024-07-04
申请号：US18390046
申请日：2023-12-20
申请人： Hitachi High-Tech Corporation
发明人： Mayuka OSAKI , Shgunki Tsuboya , Hajime Kawano
IPC分类号： H01J37/153 , H01J37/22 , H01J37/244 , H01J37/285 , H01J37/30 , H01J37/304
CPC分类号： H01J37/153 , H01J37/222 , H01J37/226 , H01J37/244 , H01J37/3005 , H01J37/3045 , H01J37/285 , H01J2229/507 , H01J2231/50047
摘要： A multi-beam charged-particle microscope apparatus 100 includes an irradiation system 104 that irradiates a plurality of regions on a surface of a sample 9 with a plurality of beams, a detection system 125 (correction detector 132 and imaging detector 131) that detects emitted electrons from the surface of the sample 9, and a controller 102 that generates a first brightness of a first pixel in a first region based on a first signal of a first detector of a multi-detector 123 and generates a second brightness of a second pixel in a second region based on a second signal of a second detector. A processor of a processor system 103 that can communicate with the charged-particle microscope apparatus 100 specifies a first crosstalk amount from a second emitted electron to the first signal based on the first brightness obtained from the charged-particle microscope apparatus 100 and an output of the correction detector 132 and corrects the first brightness based on the first crosstalk amount.

5. 发明授权

US12001521B2 Adjusting method of charged particle beam device and charged particle beam device system 有权
公开(公告)号：US12001521B2
公开(公告)日：2024-06-04
申请号：US17285368
申请日：2019-09-09
申请人： Hitachi High-Tech Corporation
发明人： Heita Kimizuka , Natsuki Tsuno , Muneyuki Fukuda
IPC分类号： G06F18/40 , G06T5/50 , G06T5/92 , G06T7/00 , H01J37/22 , H01J37/28
CPC分类号： G06F18/40 , G06T5/50 , G06T5/92 , G06T7/0004 , H01J37/222 , H01J37/28 , G06T2207/10061 , G06T2207/30148
摘要： The present disclosure hereinafter proposes a charged particle beam device and a method for adjusting a charged particle beam device which aim to appropriately set device conditions independently of a state of a sample. The present disclosure proposes a method and a system for adjusting contrast and brightness of an image, comprising: adjusting offset (step 112) of a signal processing device of the charged particle beam device so that the brightness of a pattern in an image obtained by scanning with a first charged particle beam (first intermittent condition beam) becomes a predetermined value; and adjusting a gain (step 114) of the signal processing device so that the brightness of a pattern in an image obtained by scanning with a second charged particle beam, which is a pulse beam (second intermittent condition beam) different from the first charged particle beam in at least one of irradiation time, irradiation distance, interval time between irradiation points, and distance between irradiation points, becomes a predetermined value.

6. 发明公开

US20240177966A1 MICROSCOPY IMAGING METHOD AND SYSTEM 审中-公开
公开(公告)号：US20240177966A1
公开(公告)日：2024-05-30
申请号：US18432838
申请日：2024-02-05
申请人： FIBICS INCORPORATED
发明人： Michael William PHANEUF , Ken Guillaume LAGAREC
IPC分类号： H01J37/26 , H01J37/22 , H01J37/28 , H01J37/30 , H01J37/304 , H01J37/305
CPC分类号： H01J37/26 , H01J37/222 , H01J37/28 , H01J37/3005 , H01J37/304 , H01J37/3045 , H01J37/3056 , G06T2207/10061 , H01J2237/226 , H01J2237/2811 , H01J2237/3174 , H01J2237/31749
摘要： Linear fiducials with known angles relative to each other are formed such that their structures appear in a cross-sectional face of the sample as a distinct structure. Therefore, when imaging the cross-section face during the cross-sectioning operation, the distance between the identified structures allows unique identification of the position of the cross-section plane along the Z axis. Then a direct measurement of the actual position of each slice can be calculated, allowing for dynamic repositioning to account for drift in the plane of the sample and also dynamic adjustment of the forward advancement rate of the FIB to account for variations in the sample, microscope, microscope environment, etc. that contributes to drift. An additional result of this approach is the ability to dynamically calculate the actual thickness of each acquired slice as it is acquired.

7. 发明授权

US11921063B2 Lateral recess measurement in a semiconductor specimen 有权
公开(公告)号：US11921063B2
公开(公告)日：2024-03-05
申请号：US17382280
申请日：2021-07-21
申请人： Applied Materials Israel Ltd.
发明人： Michael Chemama , Ron Meiry , Moshe Eliasof , Lior Yaron , Guy Eytan , Konstantin Chirko , Rafael Bistritzer
IPC分类号： G01N23/2206 , G01N23/2251 , H01J37/22 , H01J37/28 , H01L21/66
CPC分类号： G01N23/2206 , G01N23/2251 , H01J37/222 , H01J37/28 , H01L22/20 , G01N2223/053 , G01N2223/303 , G01N2223/306 , G01N2223/401 , G01N2223/418 , G01N2223/501 , G01N2223/61 , G01N2223/6116 , G01N2223/66 , H01J2237/2802 , H01J2237/2806 , H01J2237/2815
摘要： There is provided a system and method of measuring a lateral recess in a semiconductor specimen, comprising: obtaining a first image acquired by collecting SEs emitted from the surface of the specimen, and a second image acquired by collecting BSEs scattered from an interior region of the specimen between the surface and a target second layer, the specimen scanned using an electron beam with a landing energy selected to penetrate to a depth corresponding to the target second layer; generating a first GL waveform based on the first image, and a second GL waveform based on the second image; estimating a first width of the first layers based on the first GL waveform, and a second width with respect to at least the target second layer based on the second GL; and measuring a lateral recess based on the first width and the second width.

8. 发明公开

US20240044823A1 METHOD AND SYSTEM FOR QUANTITATIVE EVALUATION OF SEALING PROPERTY OF SHALE SYSTEM 审中-公开
公开(公告)号：US20240044823A1
公开(公告)日：2024-02-08
申请号：US18478709
申请日：2023-09-29
申请人： China University of Petroleum (East China)
发明人： Yuxin HAO , Shang XU , Qiyang GOU
IPC分类号： G01N23/2251 , G01N15/08 , G01N33/24
CPC分类号： G01N23/2251 , G01N15/088 , G01N33/24 , H01J37/222
摘要： The present invention relates to the technical field of unconventional oil and gas geology. It discloses a method and a system for quantitatively evaluating the sealing property of shale systems. Utilizing optical microscopy and field emission scanning electron microscopy, the present invention quantifies a bitumen content and pore structure parameters in a shale reservoir following qualitative identification. It classifies shale formations into four sealing types: early-stage closed and late-stage closed, early-stage closed and late-stage open, early-stage open and late-stage closed, and early-stage open and late-stage open. This classification is of significance for accurately evaluating shale preservation conditions and exploration potential. The present invention verifies the evaluations of sealing property of the shale systems by virtue of the measured formation pressures and the actual production data from shale gas wells, and is conferred with improved scientific rigor by judgment and comparison.

9. 发明公开

US20240005463A1 SEM IMAGE ENHANCEMENT 审中-公开
公开(公告)号：US20240005463A1
公开(公告)日：2024-01-04
申请号：US18369775
申请日：2023-09-18
申请人： ASML Netherlands B.V.
发明人： Shakeeb Bin HASAN , Maikel Robert GOOSEN
IPC分类号： G06T5/10 , G06T5/50 , H01J37/22 , H01J37/28
CPC分类号： G06T5/10 , G06T5/50 , H01J37/222 , H01J37/28 , G06T2207/10061 , G06T2207/20056 , G06T2207/20192 , G06T2207/30148 , H01J2237/223
摘要： Disclosed herein is a method of reducing a sample charging effect in a scanning electron microscope (SEM) image, the method comprising: obtaining a first SEM image from a first electron beam scan with a parameter being a first quantity; obtaining a second SEM image from a second electron beam scan with the parameter being a second quantity different from the first quantity; and generating a reduced sample charging effect image based on convolution equations comprising a representation of the first SEM image, a representation of the second SEM image, a first point spread function corresponding to the first SEM image and a second point spread function corresponding to the second SEM image.

10. 发明公开

US20230395351A1 LIVE-ASSISTED IMAGE ACQUISITION METHOD AND SYSTEM WITH CHARGED PARTICLE MICROSCOPY 审中-公开
公开(公告)号：US20230395351A1
公开(公告)日：2023-12-07
申请号：US17831147
申请日：2022-06-02
申请人： FEI Company
发明人： Pavel Potocek , Bert Henning Freitag , Maurice Peemen
IPC分类号： H01J37/28 , H01J37/244 , H01J37/22 , H01J37/20 , H01J37/26 , G06T7/00
CPC分类号： H01J37/28 , H01J37/244 , H01J37/222 , H01J37/20 , H01J37/265 , G06T7/0004 , H01J2237/226 , G06T2207/10061 , G06T2207/20081
摘要： A method of imaging a sample includes acquiring one or more first images of a region of the sample at a first imaging condition with a charged particle microscope system. The one or more first images are applied to an input of a trained machine learning model to obtain a predicted image indicating atom structure probability in the region of the sample. An enhanced image indicating atom locations in the region of the sample based on the atom structure probability in the predicted image is caused to be displayed in response to obtaining the predicted image.

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