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1. 发明申请

US20220139708A1 Compound Semiconductor Substrate, A Pellicle Film, And A Method For Manufacturing A Compound Semiconductor Substrate 有权
公开(公告)号：US20220139708A1
公开(公告)日：2022-05-05
申请号：US17580299
申请日：2022-01-20
申请人： Air Water Inc.
发明人： Hidehiko OKU , Ichiro HIDE
IPC分类号： H01L21/02 , C23C16/32 , C30B25/18 , C30B29/36 , C30B29/40 , H01L21/306 , H01L29/06 , H01L29/16 , H01L29/20
摘要： A method for manufacturing a compound semiconductor substrate that can achieve thinning of SiC film, wherein the method includes forming a SiC film on one principal surface side of a Si substrate and forming a recessed part in which a bottom surface is Si in a central part of another principal surface of the Si substrate.

2. 发明授权

US11119402B2 Method for manufacturing of pellicle 有权
公开(公告)号：US11119402B2
公开(公告)日：2021-09-14
申请号：US16329020
申请日：2017-08-25
申请人： AIR WATER INC.
发明人： Hidehiko Oku , Ichiro Hide
IPC分类号： G03F1/64 , G03F1/62
摘要： A method for manufacturing of a pellicle that can simplify the manufacturing process is provided. The method for manufacturing of a pellicle comprises a step for forming a SiC film on a bottom surface of a Si substrate, a step for bonding a supporting member including a through hole to a bottom surface of the SiC film, and a step for removing the Si substrate, after bonding the supporting member.

3. 发明申请

US20200020778A1 COMPOUND SEMICONDUCTOR SUBSTRATE 审中-公开
公开(公告)号：US20200020778A1
公开(公告)日：2020-01-16
申请号：US16497714
申请日：2018-03-07
申请人： AIR WATER INC.
发明人： Mitsuhisa Narukawa , Sumito OUCHI , Hiroki Suzuki , Keisuke Kawamura
IPC分类号： H01L29/267 , H01L21/02
摘要： A compound semiconductor substrate includes a SiC (silicon carbide) layer, a AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a composite layer formed on the Al nitride semiconductor layer, a GaN (gallium nitride) layer as an electron transition layer formed on the composite layer, and an Al nitride semiconductor layer as a barrier layer formed on the GaN layer. The composite layer includes C—GaN layers stacked in a vertical direction, and an AlN layer formed between the C—GaN layers.

4. 发明授权

US10354864B2 Compound semiconductor substrate with SiC layer 有权
公开(公告)号：US10354864B2
公开(公告)日：2019-07-16
申请号：US15761841
申请日：2016-10-17
申请人： AIR WATER INC.
发明人： Mitsuhisa Narukawa , Akira Fukazawa , Hiroki Suzuki , Keisuke Kawamura
IPC分类号： H01L31/0328 , H01L31/0336 , H01L21/02 , C23C16/34 , H01L29/778 , H01L29/812 , H01L33/32 , H01L29/10 , H01L29/20 , H01L29/205 , H01L29/66
摘要： A compound semiconductor substrate having a desired quality is provided.A compound semiconductor substrate has an SiC (silicon carbide) layer, an AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a first GaN (gallium nitride) layer formed on the Al nitride semiconductor layer, a first AlN intermediate layer formed on the first GaN layer in contact with the first GaN layer, and a second GaN layer formed on the first AlN intermediate layer in contact with the first AlN intermediate layer.

5. 发明授权

US10186585B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US10186585B2
公开(公告)日：2019-01-22
申请号：US15521697
申请日：2015-08-12
申请人： AIR WATER INC.
发明人： Akira Fukazawa , Sumito Ouchi
IPC分类号： H01L29/872 , H01L21/205 , H01L29/267 , H01L29/66 , H01L21/02 , H01L29/16 , H01L29/20 , H01L29/207
摘要： A semiconductor device which can reduce power consumption and a method for manufacturing the same are provided. A semiconductor device comprises an Si (silicon) substrate, an SiC (silicon carbide) layer formed on the surface of the Si substrate, an AlN (aluminum nitride) layer formed on the surface of the SiC layer, an n-type GaN (gallium nitride) layer formed on the surface of the AlN layer, a first electrode formed at the surface side of the GaN layer, and a second electrode formed at the reverse face side of the Si substrate 1. The magnitude of electrical current which flows between the first electrode and the second electrode depends on electrical voltage between the first electrode and the second electrode.

6. 发明申请

US20180053647A1 COMPOSITE SEMICONDUCTOR SUBSTRATE 审中-公开
公开(公告)号：US20180053647A1
公开(公告)日：2018-02-22
申请号：US15556531
申请日：2016-01-14
申请人： AIR WATER INC.
发明人： Akira FUKAZAWA , Mitsuhisa NARUKAWA , Keisuke KAWAMURA
IPC分类号： H01L21/02 , H01L29/267 , H01L29/778
CPC分类号： H01L21/0254 , H01L21/02381 , H01L21/02447 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0251 , H01L21/02529 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L29/267 , H01L29/452 , H01L29/475 , H01L29/778 , H01L29/7786 , H01L29/812
摘要： A composite semiconductor substrate being able to improve voltage withstanding and crystalline quality is provided. A composite semiconductor substrate is equipped with an Si (silicon) substrate, an SiC (silicon carbide) layer formed on the surface of the Si substrate, an AlN (aluminum nitride) layer formed on the surface of the SiC layer, a composite layer formed on the surface of the AlN layer, and a GaN (gallium nitride) layer formed on the surface of the composite layer. The composite layer includes an AlN (aluminum nitride) layer and a GaN layer formed on the surface of the AlN layer. In at least one composite layer, the average density of C and Fe in the GaN layer is higher than the average density of C and Fe in the AlN layer.

7. 发明申请

US20180030242A1 THERMAL EXPANDABILITY ADJUSTER, USE AS THERMAL EXPANDABILITY ADJUSTER, THERMOSET RESIN COMPOSITION, INSULATING MATERIAL, SEALING MATERIAL AND CONDUCTIVE PASTE EACH CONTAINING THERMOSET RESIN COMPOSITION, CURED PRODUCTS, PREPREG AND MEMBER OBTAINED BY CURING THERMOSET RESIN COMPOSITION OF PREPREG, METHOD OF ADJUSTING THERMAL EXPANSION RATE, AND MEMBER MANUFACTURED USING METHOD OF ADJUSTING 有权
公开(公告)号：US20180030242A1
公开(公告)日：2018-02-01
申请号：US15550289
申请日：2016-01-28
申请人： AIR WATER INC.
发明人： Yousuke EBIHARA , Osamu KOYAMA
IPC分类号： C08K5/3445 , H05K1/02 , H05K1/03 , C07D487/04 , C08J5/24
CPC分类号： C08K5/3445 , C07D487/04 , C08G59/26 , C08G59/32 , C08J5/18 , C08J5/24 , C08J2300/24 , C08J2363/00 , H01B1/20 , H01L23/14 , H01L23/293 , H01L23/295 , H05K1/0271 , H05K1/0346 , H05K1/0373 , H05K1/095 , H05K2201/068 , C08L63/00
摘要： A thermal expandability adjuster is provided which contains a glycoluril derivative compound represented by formula (1) below. The thermal expandability adjuster can reduce the linear thermal expansion coefficient of a cured product of a thermoset resin composition used for an insulating resin layer or the like and is effective for suppressing deformation of a circuit substrate due to heating. Compounding the above thermal expandability adjuster can reduce the linear thermal expansion coefficient of a cured product obtained by curing a thermoset resin composition and it is therefore possible to provide a member that exhibits small deformation due to heat.

8. 发明申请

US20170044091A1 COMPOSITION CONTAINING 3-CHLORO-4-METHOXYBENZYLAMINE HYDROCHLORIDE, AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：含有3-氯-4-甲氧基苄基氯化氢的组合物及其生产方法
公开(公告)号：US20170044091A1
公开(公告)日：2017-02-16
申请号：US15306646
申请日：2014-04-30
申请人： AIR WATER INC.
发明人： Takashi FUJIMOTO , Keiichi YOKOTA , Takahiro IDE
IPC分类号： C07C213/08 , C07C217/58 , C07C213/10
CPC分类号： C07C213/08 , C07C213/10 , C07C217/58
摘要： There is provided a method for producing, at a high yield, a composition containing 3-chloro-4-methoxybenzylamine hydrochloride (CMBA-HCl) in which the purity of CMBA-HCl is high. This method comprises a chlorination step involving a chlorination reaction that generates CMBA-HCl from 4-methoxybenzylamine hydrochloride using hydrogen peroxide and hydrochloric acid. There is also provided a CMBA-HCl-containing composition which is produced by the aforementioned production method and in which the purity of CMBA-HCl is high.
摘要翻译：提供了以高产率制备含有CMBA-HCl的纯度高的3-氯-4-甲氧基苄胺盐酸盐（CMBA-HCl）的组合物的方法。该方法包括使用过氧化氢和盐酸从4-甲氧基苄胺盐酸盐产生CMBA-HCl的氯化反应的氯化步骤。还提供了通过上述制备方法生产的含CMBA-HCl的组合物，其中CMBA-HCl的纯度高。

9. 发明申请

US20140316103A1 INSULATING MATERIAL USING EPOXY RESIN COMPOSITION 审中-公开
标题翻译：绝缘材料使用环氧树脂组合物
公开(公告)号：US20140316103A1
公开(公告)日：2014-10-23
申请号：US14360832
申请日：2012-11-22
申请人： AIR WATER INC.
发明人： Kou Takahashi
IPC分类号： H05K1/03 , C08G59/40
CPC分类号： H05K1/0353 , C08G59/4085 , H05K1/024 , H05K1/0326 , H05K2201/0162
摘要： An insulating material obtained by using an epoxy resin composition comprising, as an epoxy resin curing agent, a polycondensation-type aryloxysilane compound contained in an amount of 50 to 100 wt %, having a hydroxyl group equivalent in a range of 1,000 to 8,000 g/eq, and an epoxy resin having an epoxy equivalent of 200 to 500, wherein a thermally cured product obtained by curing this epoxy resin composition at a temperature of 180° C. or lower, shows a dielectric constant and a dielectric loss tangent of 3.00 or smaller and 0.015 or smaller, respectively, at 1 GHz under normal temperature. The insulating material using the epoxy resin composition can exhibit both excellent dielectric properties and practical characteristics, and is suitable for an interlayer insulating material of a multilayer printed circuit board.
摘要翻译：通过使用环氧树脂组合物获得的绝缘材料，所述环氧树脂组合物包含作为环氧树脂固化剂的缩合型芳氧基硅烷化合物，所述缩聚型芳氧基硅烷化合物的含量为50〜100重量％，羟基当量为1,000〜8,000g / eq和环氧当量为200〜500的环氧树脂，其中通过在180℃或更低的温度下使该环氧树脂组合物固化获得的热固化产物显示介电常数和介电损耗角正切为3.00或分别在常温下在1GHz下较小和0.015或更小。使用环氧树脂组合物的绝缘材料可以表现出优异的介电性能和实用性能，并且适用于多层印刷电路板的层间绝缘材料。

10. 外观设计

USD714901S1 Fluid filter housing 有权
标题翻译：流体过滤器外壳
公开(公告)号：USD714901S1
公开(公告)日：2014-10-07
申请号：US29447521
申请日：2013-03-04
申请人： Atlas Air & Water, Inc.
设计人： John Ruprecht , Mitchell James Kinsey

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