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    • 1. 发明授权
    • Method and apparatus for growing semiconductor heterostructures
    • 用于生长半导体异质结构的方法和装置
    • US5254210A
    • 1993-10-19
    • US874779
    • 1992-04-27
    • Kenneth A. JonesJoseph R. FlemishAlok TripathiVladimir S. Ban
    • Kenneth A. JonesJoseph R. FlemishAlok TripathiVladimir S. Ban
    • C23C16/30C23C16/455C30B25/02C30B25/18C23C16/00
    • C30B25/02C23C16/301C23C16/455C23C16/45561C30B25/18C30B29/40
    • A conventional hydride VPE reactor is modified by the addition of a gas switching manifold and the use of three way pneumatic valves in the manifold to alternately direct the flow of reactant gas mixtures into either the reactor or a vent line. With these additions, various predetermined gas mixtures of arsine, phosphine, and hydrogen selected by electronic mass flow controllers (GM1 and GM2) and predetermined gas mixtures of H.sub.2 and HCl (GM3) may be alternately infused into the reactor chamber or vented as desired. When GM3 is injected into the reactor chamber, the content of GaAs of the growing layer increases while the content of In decreases. Given this, when GM3 and GM2 are vented rather than injected into the furnace and GM1 is directed into the furnace, a layer of InGaAsP with a predetermined composition (A) will be deposited. Alternatively, when GM3 and GM2 are co-injected into the reactor and GM1 is be directed to the vent, a layer of InGaAsP of a predetermined composition (B) will be deposited. Therefore, the flow rates of HCl, PH.sub.3 and AsH.sub.3 can be adjusted to produce compositions A and B that correspond to a lattice-matched condition with either InP or GaAs substrate.
    • 传统的氢化物VPE反应器通过添加气体切换歧管和在歧管中使用三通气动阀来交替地将反应气体混合物的流动引导到反应器或排气管线中来进行修改。 通过这些添加,可以将电子质量流量控制器(GM1和GM2)选择的各种预定的胂,膦和氢的气体混合物和H 2和HCl(GM 3)的预定气体混合物交替地输入到反应器室中或根据需要排气。 当GM3被注入到反应器室中时,生长层的GaAs含量增加,而In的含量减少。 考虑到这一点,当GM3和GM2排放而不是注入炉中,GM1被引入炉中时,将沉积具有预定组成(A)的InGaAsP层。 或者,当将GM3和GM2共注入到反应器中并且GM1被引导到排气口时,将沉积预定组成(B)的InGaAsP层。 因此,可以调节HCl,PH3和AsH3的流量,以产生与InP或GaAs衬底的晶格匹配条件相对应的组分A和B.