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1. 发明申请

US20130011963A1 PROCESS FOR PRODUCING ZINC OXIDE VARISTOR 审中-公开
标题翻译：生产氧化锌溶液的方法
公开(公告)号：US20130011963A1
公开(公告)日：2013-01-10
申请号：US13614298
申请日：2012-09-13
申请人： Ching-Hohn LIEN , Jie-An ZHU , Zhi-Xian XU , Hong-Zong XU , Ting-Yi FANG , Xing-Xiang HUANG
发明人： Ching-Hohn LIEN , Jie-An ZHU , Zhi-Xian XU , Hong-Zong XU , Ting-Yi FANG , Xing-Xiang HUANG
IPC分类号： H01L21/02
CPC分类号： C04B35/6261 , C01G9/02 , C01P2002/50 , C01P2002/52 , C01P2002/72 , C04B35/453 , C04B35/62645 , C04B35/64 , C04B2235/3203 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3232 , C04B2235/3239 , C04B2235/3241 , C04B2235/3244 , C04B2235/3251 , C04B2235/3258 , C04B2235/3267 , C04B2235/3272 , C04B2235/3274 , C04B2235/3275 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3291 , C04B2235/3293 , C04B2235/3294 , C04B2235/3298 , C04B2235/3409 , C04B2235/3418 , C04B2235/36 , C04B2235/42 , C04B2235/5454 , H01C7/112
摘要： A process for producing zinc oxide varistors possessed a property of breakdown voltage (V1mA) ranging from 230 to 1,730 V/mm is to perform the doping of zinc oxide and the sintering of zinc oxide grains with a high-impedance sintered powder through two independent procedures, so that the doped zinc oxide and the high-impedance sintered powder are well mixed in a predetermined ratio and then used to make the zinc oxide varistors through conventional technology by low-temperature sintering (lower than 900° C.); the resultant zinc oxide varistors may use pure silver as inner electrode and particularly possess breakdown voltage ranging from 230 to 1,730 V/mm.
摘要翻译：具有230〜1730V / mm的击穿电压（V1mA）的氧化锌变阻器的制造方法是通过两个独立的程序进行氧化锌的掺杂和氧化锌粒子与高阻抗烧结粉末的烧结，使得掺杂的氧化锌和高阻抗烧结粉末以预定比例充分混合，然后通过低温烧结（低于900℃）的常规技术制造氧化锌变阻器; 所得到的氧化锌变阻器可以使用纯银作为内部电极，特别是具有230至1730V / mm的击穿电压。

2. 发明授权

US08263432B2 Material composition having core-shell microstructure used for varistor 有权
标题翻译：具有用于变阻器的核 - 壳微结构的材料组成
公开(公告)号：US08263432B2
公开(公告)日：2012-09-11
申请号：US11798800
申请日：2007-05-17
申请人： Ching-Hohn Lien , Cheng-Tsung Kuo , Jun-Nan Lin , Jie-An Zhu , Li-Yun Zhang , Wei-Cheng Lien
发明人： Ching-Hohn Lien , Cheng-Tsung Kuo , Jun-Nan Lin , Jie-An Zhu , Li-Yun Zhang , Wei-Cheng Lien
IPC分类号： H01L21/02
CPC分类号： H01C7/1006 , H01C7/108 , H01C7/112 , H01C7/115 , H01C7/18 , H01L27/0288 , H01L28/20 , Y10T428/2985 , Y10T428/2989 , Y10T428/2991
摘要： A material composition having a core-shell microstructure suitable for manufacturing a varistor having outstanding electrical properties, the core-shell microstructure of the material composition at least comprising a cored-structure made of a conductive or semi-conductive material and a shelled-structure made from a glass material to wrap the cored-structure, and electrical properties of the varistors during low temperature of sintering process can be decided and designated by precisely controlling the size of the grain of the cored-structure and the thickness and insulation resistance of the insulating layer of the shelled-structure of material composition.
摘要翻译：具有适于制造具有优异电性能的变阻器的核 - 壳微结构的材料组合物，所述材料组合物的芯 - 壳微结构至少包括由导电或半导电材料制成的芯结构和制成的壳形结构从玻璃材料包裹芯结构，并且可以通过精确控制芯结构的晶粒尺寸和绝缘体的厚度和绝缘电阻来确定和指定压敏电阻在低温烧结过程中的电性能层的材料组成的贝壳结构。

3. 发明申请

US20120057265A1 ZINC-OXIDE SURGE ARRESTER FOR HIGH-TEMPERATURE OPERATION 有权
标题翻译：用于高温操作的氧化锌冲击回收器
公开(公告)号：US20120057265A1
公开(公告)日：2012-03-08
申请号：US13023624
申请日：2011-02-09
申请人： Ching-Hohn LIEN , Jie-An Zhu , Zhi-Xian Xu , Xing-Xiang Huang , Ting-Yi Fang
发明人： Ching-Hohn LIEN , Jie-An Zhu , Zhi-Xian Xu , Xing-Xiang Huang , Ting-Yi Fang
IPC分类号： H02H1/00
CPC分类号： H01C7/112 , H01C7/10 , H01C7/12
摘要： A ZnO surge arrester for high-temperature operation is characterized in that a grain boundary layer between ZnO grains thereof contains a BaTiO3-based positive temperature coefficient thermistor material, which takes 10-85 mol % in the overall grain boundary layer, and when operating temperature raises, the positive temperature coefficient thermistor material in the grain boundary layer has its resistance sharply increasing with the raising temperature, so as to compensate or partially compensate decrease in resistance of components in the grain boundary layer caused by the raising temperature, thereby making the resistance of the grain boundary layer in the ZnO surge arrester more independent of temperature. The ZnO surge arrester thus is suitable for operation where a maximum operating temperature is higher than 125° C., or even higher than 150° C.
摘要翻译：用于高温操作的ZnO避雷器的特征在于，其ZnO晶粒之间的晶界层包含基于BaTiO 3的正温度系数热敏电阻材料，其在整个晶界层中占据10-85mol％，并且当工作温度升温时，晶界层中的正温度系数热敏电阻材料的电阻随着升温而急剧上升，从而补偿或部分补偿由升温引起的晶界层中的组分的电阻降低，从而使电阻的ZnO避雷器中的晶界层更加独立于温度。因此，ZnO避雷器适用于最高工作温度高于125℃或甚至高于150℃的操作。

4. 发明授权

US07962564B2 Discovery of a virtual topology in a multi-tasking multi-processor environment 失效
标题翻译：在多任务多处理器环境中发现虚拟拓扑
公开(公告)号：US07962564B2
公开(公告)日：2011-06-14
申请号：US12036979
申请日：2008-02-25
申请人： Richard K. Errickson , Welela Haileselaissie , Leornard W. Helmer, Jr. , John S. Houston , An Zhu
发明人： Richard K. Errickson , Welela Haileselaissie , Leornard W. Helmer, Jr. , John S. Houston , An Zhu
IPC分类号： G06F9/30
CPC分类号： G06F9/54
摘要： A computer program product, apparatus and method for identifying processors in a multi-tasking multiprocessor network, the computer program product including a tangible storage medium readable by a processing circuit and storing instructions for execution by the processing circuit for performing a method including storing a service record for a port to which an LID has been assigned, retrieving service records for nodes to which channel paths may connect, retrieving path records that provide address destinations for the nodes identified in the service records, initiating channel initialization for the channel paths defined for the port and removing the service record for the port.
摘要翻译：一种用于识别多任务多处理器网络中的处理器的计算机程序产品，装置和方法，所述计算机程序产品包括可由处理电路读取的有形存储介质，并且存储由所述处理电路执行以执行包括存储服务针对已经分配了LID的端口的记录，检索通道路径可以连接到的节点的服务记录，检索为服务记录中标识的节点提供地址目的地的路径记录，为为端口并删除端口的服务记录。

5. 发明申请

US20090321691A1 Process for producing surge absorbing material with dual functions 有权
标题翻译：具有双重功能的浪涌吸收材料的制造方法
公开(公告)号：US20090321691A1
公开(公告)日：2009-12-31
申请号：US12585103
申请日：2009-09-03
申请人： Yu-Wen Tan , Jie-An Zhu , Li-Yun Zhang
发明人： Yu-Wen Tan , Jie-An Zhu , Li-Yun Zhang
IPC分类号： H01B1/12 , H01B1/02 , H01B1/22
CPC分类号： C03C14/006 , C03C2214/08 , C03C2214/16 , Y10T428/2982
摘要： A kind of manufacturing method for dual functions with varistor material and device has one of the characteristics among capacitance, inductance, voltage suppressor and thermistor in addition to surge absorbing characteristic, which microstructural compositions include a glass substrate with high resistance and three kinds of low-resistance conductive or semiconductive particles in micron, submicron and nanometer size uniformly distributed in the glass substrate to provide with good surge absorbing characteristic.
摘要翻译：一种具有变阻器材料和器件的双重功能的制造方法除了浪涌吸收特性之外，还具有电容，电感，电压抑制器和热敏电阻之类的特征之一，其微结构组成包括具有高电阻的玻璃衬底和三种低电阻，电阻导电或半导体颗粒以微米，亚微米和纳米尺寸均匀分布在玻璃基板中，以提供良好的浪涌吸收特性。

6. 发明授权

US07541910B2 Multilayer zinc oxide varistor 失效
标题翻译：多层氧化锌压敏电阻
公开(公告)号：US07541910B2
公开(公告)日：2009-06-02
申请号：US11440064
申请日：2006-05-25
申请人： Wei-Cheng Lien , Cheng-Tsung Kuo , Jun-Nun Lin , Jie-An Zhu , Li-Yun Zhang
发明人： Wei-Cheng Lien , Cheng-Tsung Kuo , Jun-Nun Lin , Jie-An Zhu , Li-Yun Zhang
IPC分类号： H01C7/10
CPC分类号： H01C7/10 , H01C7/112 , H01C7/18
摘要： A multilayer zinc oxide varistor without bismuth oxide system ingredients, and having variable breakdown voltages by controlling the thickness of the ceramic material; the varistor is bismuth-free and composed of zinc oxide as the primary constituent with alkaline earth element (Ba) as first additive, at least one of transition elements of Mn, Co, Cr, or Ni as second additives, at least one of rare earth elements of Pr, La, Ce, Nd or Tb as third additives and at least one of B, Si, Se, Al, Ti, W, Sn, Sb, Na, or K as rest additives, and the bismuth-free and zinc oxide based varistor exhibits an excellent ESD (Electro-Static Discharge) withstanding characteristic.
摘要翻译：一种不含氧化铋体系成分的多层氧化锌压敏电阻，通过控制陶瓷材料的厚度具有可变的击穿电压; 所述变阻器是无铋的，以氧化锌为主要成分的碱土金属元素（Ba）作为第一添加剂，Mn，Co，Cr或Ni的过渡元素中的至少一种作为第二添加剂，至少一种稀有金属作为第三添加剂的Pr，La，Ce，Nd或Tb的土元素，作为剩余添加剂的B，Si，Se，Al，Ti，W，Sn，Sb，Na或K中的至少一种，基于氧化锌的变阻器具有优异的ESD（静电放电）耐受特性。

7. 发明授权

US08488291B2 Zinc-oxide surge arrester for high-temperature operation 有权
标题翻译：氧化锌避雷器用于高温运行
公开(公告)号：US08488291B2
公开(公告)日：2013-07-16
申请号：US13023624
申请日：2011-02-09
申请人： Ching-Hohn Lien , Jie-An Zhu , Zhi-Xian Xu , Xing-Xiang Huang , Ting-Yi Fang
发明人： Ching-Hohn Lien , Jie-An Zhu , Zhi-Xian Xu , Xing-Xiang Huang , Ting-Yi Fang
IPC分类号： H02H1/00
CPC分类号： H01C7/112 , H01C7/10 , H01C7/12
摘要： A ZnO surge arrester for high-temperature operation is characterized in that a grain boundary layer between ZnO grains thereof contains a BaTiO3-based positive temperature coefficient thermistor material, which takes 10-85 mol % in the overall grain boundary layer, and when operating temperature raises, the positive temperature coefficient thermistor material in the grain boundary layer has its resistance sharply increasing with the raising temperature, so as to compensate or partially compensate decrease in resistance of components in the grain boundary layer caused by the raising temperature, thereby making the resistance of the grain boundary layer in the ZnO surge arrester more independent of temperature. The ZnO surge arrester thus is suitable for operation where a maximum operating temperature is higher than 125° C., or even higher than 150° C.
摘要翻译：用于高温操作的ZnO避雷器的特征在于，其ZnO晶粒之间的晶界层包含基于BaTiO 3的正温度系数热敏电阻材料，其在整个晶界层中占据10-85mol％，并且当工作温度升温时，晶界层中的正温度系数热敏电阻材料的电阻随着升温而急剧上升，从而补偿或部分补偿由升温引起的晶界层中的组分的电阻降低，从而使电阻的ZnO避雷器中的晶界层更加独立于温度。因此，ZnO避雷器适用于最高工作温度高于125℃或甚至高于150℃的操作。

8. 发明申请

US20130133183A1 PROCESS FOR PRODUCING ZINC OXIDE VARISTOR HAVING HIGH POTENTIAL GRADIENT AND HIGH NON-LINEARITY COEFFICIENT 审中-公开
标题翻译：生产具有高潜能梯度和高非线性系数的氧化锌系列的方法
公开(公告)号：US20130133183A1
公开(公告)日：2013-05-30
申请号：US13609508
申请日：2012-09-11
申请人： Ching-Hohn LIEN , Jie-An ZHU
发明人： Ching-Hohn LIEN , Jie-An ZHU
IPC分类号： H01C7/02
CPC分类号： C04B35/453 , C01G9/02 , C01P2002/54 , C04B35/624 , C04B35/62805 , C04B35/62807 , C04B35/6281 , C04B35/62813 , C04B35/62815 , C04B35/62818 , C04B35/62821 , C04B35/62823 , C04B35/62826 , C04B2235/3203 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3232 , C04B2235/3239 , C04B2235/3241 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3262 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/3294 , C04B2235/3298 , C04B2235/3409 , C04B2235/3418 , C04B2235/44 , C04B2235/442 , C04B2235/443 , C04B2235/449 , C04B2235/85 , H01C7/112 , H01C17/06546 , Y10T29/49085
摘要： A process for producing zinc oxide varistor is disclosed to allow that one step of having zinc oxide grains doped with non-equivalent ions and sufficiently semiconductorized and the other one step of preparing sintered powders having property of high-impedance are prepared by two separate procedures respectively, resulted in that the zinc oxide varistor produced by the process features both a high potential gradient and a high non-linearity coefficient; and more particularly the disclosed process is suited for producing a specific zinc oxide varistor whose potential gradient ranges from 2,000 to 9000 V/mm as well as non-linearity coefficient (α) ranges from 21.5 to 55.
摘要翻译：公开了一种生产氧化锌压敏电阻的方法，可以分别通过两个独立的程序制备具有掺杂有非等效离子并充分半导体化的氧化锌晶粒和制备具有高阻抗特性的烧结粉末的另一步骤导致由该工艺生产的氧化锌压敏电阻具有高电位梯度和高非线性系数; 更具体地说，所公开的方法适用于制造其电位梯度为2,000至9000V / mm的特定氧化锌变阻器以及非线性系数（α）为21.5至55。

9. 发明授权

US08313672B2 Process for producing surge absorbing material with dual functions 有权
标题翻译：具有双重功能的浪涌吸收材料的制造方法
公开(公告)号：US08313672B2
公开(公告)日：2012-11-20
申请号：US12585103
申请日：2009-09-03
申请人： Yu-Wen Tan , Jie-An Zhu , Li-Yun Zhang
发明人： Yu-Wen Tan , Jie-An Zhu , Li-Yun Zhang
IPC分类号： H01B1/22 , H01B1/02
CPC分类号： C03C14/006 , C03C2214/08 , C03C2214/16 , Y10T428/2982
摘要： A kind of manufacturing method for dual functions with varistor material and device has one of the characteristics among capacitance, inductance, voltage suppressor and thermistor in addition to surge absorbing characteristic, which microstructural compositions include a glass substrate with high resistance and three kinds of low-resistance conductive or semiconductive particles in micron, submicron and nanometer size uniformly distributed in the glass substrate to provide with good surge absorbing characteristic.
摘要翻译：一种具有变阻器材料和器件的双重功能的制造方法除了浪涌吸收特性之外，还具有电容，电感，电压抑制器和热敏电阻之类的特征之一，其微结构组成包括具有高电阻的玻璃衬底和三种低电阻，电阻导电或半导体颗粒以微米，亚微米和纳米尺寸均匀分布在玻璃基板中，以提供良好的浪涌吸收特性。

10. 发明授权

US07724124B2 Ceramic material used for protection against electrical overstress and low-capacitance multilayer chip varistor using the same 有权
标题翻译：陶瓷材料用于防过电压保护和低电容多层片式压敏电阻的使用
公开(公告)号：US07724124B2
公开(公告)日：2010-05-25
申请号：US11704987
申请日：2007-02-12
申请人： Ching-Hohn Lien , Cheng-Tsung Kuo , Jun-Nun Lin , Jie-An Zhu , Li-Yun Zhang , Xing-Guang Huang , Wei-Cheng Lien
发明人： Ching-Hohn Lien , Cheng-Tsung Kuo , Jun-Nun Lin , Jie-An Zhu , Li-Yun Zhang , Xing-Guang Huang , Wei-Cheng Lien
IPC分类号： H01C7/10
CPC分类号： H01C7/105 , B82Y30/00 , C03C14/006 , C03C2214/05 , C03C2214/08 , C03C2214/16 , C04B35/453 , C04B35/46 , C04B35/4682 , C04B35/47 , C04B35/565 , C04B35/624 , C04B35/62805 , C04B35/62807 , C04B35/62886 , C04B2235/3275 , C04B2235/3284 , C04B2235/3298 , C04B2235/36 , C04B2235/405 , C04B2235/408 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/6025 , H01C7/12
摘要： A low-capacitance multilayer chip varistor has capacitance lower than 0.5 pF at 1 MHz and has a characteristic of resisting more than thousands of times of 8 KV electrostatic shock, which comprises a ceramic main body, outer electrodes disposed at two ends of the ceramic main body and inner electrodes disposed therein; the ceramic main body comprises inorganic glass of 3˜50 wt % and semi-conductive or conductive particles of 50˜97 wt % with particle size of more than 0.1 μm, and a layer of inorganic glass film covers the surface of semi-conductive or conductive particles, wherein the inorganic glass film contains semi-conductive or conductive particles of submicron or nanometer which is smaller than 1 micron, and the quantity contained of semi-conductive or conductive particles is less than 20 wt % of that of inorganic glass.
摘要翻译：低容量多层片式压敏电阻在1MHz时的电容低于0.5pF，具有耐8千伏静电电击的数千倍的特性，其中包括一陶瓷主体，外电极位于陶瓷主体的两端主体和内部电极; 陶瓷主体包含3〜50重量％的无机玻璃和粒径大于0.1μm的50〜97重量％的半导电性或导电性粒子，无机玻璃膜层覆盖半导电性或导电颗粒，其中无机玻璃膜含有小于1微米的亚微米或纳米的半导电或导电颗粒，并且半导体或导电颗粒所含的量小于无机玻璃的20重量％。

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