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    • 1. 发明授权
    • Haptics effect controller architecture and instruction set
    • 触觉效果控制器架构和指令集
    • US08624857B2
    • 2014-01-07
    • US13024042
    • 2011-02-09
    • Hugo CheungAnand Gupta
    • Hugo CheungAnand Gupta
    • G06F3/041
    • G06F3/0416G06F3/016H03K2217/96062
    • A method for generating a desired haptics effect is provided. A haptics effect instruction is generated by a host processor responsive to a touch screen, where the haptics effect instruction corresponds to the desired haptics effect. This haptics effect instruction is received by a haptics driver, and a haptic profile from the haptics effect instruction is generated from the haptics effect instruction. The haptic profile includes at least one of a profile word, a move word, wait/halt word, and a branch word, and a sine wave is generated from the from the haptic profile that corresponds to the desired haptics effect.
    • 提供了一种产生期望的触觉效果的方法。 触觉效果指令由主机处理器响应于触摸屏产生,其中触觉效果指令对应于期望的触觉效果。 该触觉效果指令由触觉驱动器接收,并且从触觉效果指令生成来自触觉效果指令的触觉简档。 触觉简档包括简档字,移动字,等待/停止字和分支字中的至少一个,并且从对应于期望的触觉效果的触觉简档中产生正弦波。
    • 3. 发明授权
    • Decontamination of a plasma reactor using a plasma after a chamber clean
    • 在室清洁后使用等离子体对等离子体反应器进行去污
    • US06449521B1
    • 2002-09-10
    • US09156698
    • 1998-09-18
    • Anand Gupta
    • Anand Gupta
    • G06F1900
    • H01J37/32862B08B7/0035C23C16/4405Y10T29/41Y10T29/413Y10T29/417
    • A method and apparatus for reducing fluorine and other sorbable contaminants in plasma reactor used in chemical vapor deposition process such as the deposition of silicon oxide layer by the reaction of TEOS and oxygen. According to the method of the present invention, plasma of an inert gas is maintained in plasma reactor following chamber clean to remove sorbable contaminants such as fluorine. The plasma clean is typically followed by seasoning of the reactor to block or retard remaining contaminants. According to one embodiment of the invention, the combination of chamber clean, plasma clean, and season film is conducted before PECVD oxide layer is deposited on wafer positioned in the plasma reactor.
    • 用于化学气相沉积工艺中用于还原等离子体反应器中的氟和其它可吸附污染物的方法和装置,例如通过TEOS和氧的反应沉积氧化硅层。 根据本发明的方法,惰性气体的等离子体在室清洁之后保持在等离子体反应器中以除去可吸附的污染物如氟。 等离子体清洁通常是通过反应器的调味来阻止或延缓剩余的污染物。 根据本发明的一个实施例,在PECVD氧化物层沉积在等离子体反应器中的晶片上之前,进行室清洁,等离子体清洁和季节膜的组合。
    • 7. 发明授权
    • Film to tie up loose fluorine in the chamber after a clean process
    • 在清洁过程之后,电影将室内的松散的氟结合起来
    • US6020035A
    • 2000-02-01
    • US740381
    • 1996-10-29
    • Anand GuptaMohan BhanSudhakar Subrahmanyam
    • Anand GuptaMohan BhanSudhakar Subrahmanyam
    • C23C14/56C23C16/44C23C16/50C23C16/509C23C16/52H01L21/316B05D3/06B08B5/00H05H1/02
    • C23C14/564C23C16/4404C23C16/5096C23C16/52H01J37/32477H01J37/32862H01L21/02131H01L21/02164H01L21/02274H01L21/31612Y10S438/905
    • An improved method of reducing the level of contaminants (e.g., fluorine) absorbed in films deposited within a substrate processing chamber. A seasoning layer is deposited within the substrate processing chamber to cover contaminants that may be absorbed within walls or insulation areas of the chamber interior. The deposited seasoning layer is more stable than prior art seasoning layers and is thus less likely to release the absorbed contaminants into the substrate processing chamber during the subsequent deposition of films. In a preferred embodiment, the seasoning layer is formed from a mixed frequency PECVD process in which the low frequency RF signal is supplied at a high power level to increase ion bombardment and enhance film stability. The increased bombardment favors the formation of stable SiF bonds between silicon and fluorine atoms in the lattice structure of the film rather than unstable SiF.sub.2 or other bonds. When residual fluorine atoms (e.g., fluorine atoms absorbed within the chamber walls) are incorporated into the deposited seasoning layer, fewer loosely bonded fluorine atoms are incorporated into the layer than in prior art silicon oxide seasoning layers. Fewer loosely bonded fluorine atoms in the seasoning film results in fewer contaminants being incorporated into films deposited over substrates in subsequent processing steps.
    • 一种降低在衬底处理室内沉积的膜中吸收的污染物(例如氟)的水平的改进​​方法。 在基材处理室内沉积调味料层以覆盖可能被吸收在室内部的壁或绝缘区域内的污染物。 沉积的调味剂层比现有技术的调味料层更稳定,因此在随后的膜沉积期间不太可能将吸收的污染物释放到基材处理室中。 在优选实施例中,调味层由混合频率PECVD工艺形成,其中以高功率水平提供低频RF信号以增加离子轰击并提高膜的稳定性。 增加的轰击有利于在膜的晶格结构中硅和氟原子之间形成稳定的SiF键,而不是不稳定的SiF 2或其它键。 当剩余的氟原子(例如在室壁内吸收的氟原子)被并入沉积的调味层中时,与现有技术的氧化硅调味层相比,较少的松散键合的氟原子被掺入到该层中。 在调味膜中较少松散粘合的氟原子导致在随后的加工步骤中将沉积在基材上的薄膜中的污染物掺入较少。